NL7704389A - Samengestelde hoogspanning-halfgeleiderinrichting. - Google Patents
Samengestelde hoogspanning-halfgeleiderinrichting.Info
- Publication number
- NL7704389A NL7704389A NL7704389A NL7704389A NL7704389A NL 7704389 A NL7704389 A NL 7704389A NL 7704389 A NL7704389 A NL 7704389A NL 7704389 A NL7704389 A NL 7704389A NL 7704389 A NL7704389 A NL 7704389A
- Authority
- NL
- Netherlands
- Prior art keywords
- high voltage
- voltage semiconductor
- composite high
- composite
- semiconductor
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67998176A | 1976-04-26 | 1976-04-26 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7704389A true NL7704389A (nl) | 1977-10-28 |
NL185808B NL185808B (nl) | 1990-02-16 |
NL185808C NL185808C (nl) | 1990-07-16 |
Family
ID=24729170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7704389A NL185808C (nl) | 1976-04-26 | 1977-04-21 | Samengestelde hoogspanning-halfgeleiderinrichting. |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS52139385A (nl) |
DE (1) | DE2718185A1 (nl) |
GB (1) | GB1576457A (nl) |
NL (1) | NL185808C (nl) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2023340B (en) * | 1978-06-01 | 1982-09-02 | Mitsubishi Electric Corp | Integrated circuits |
US4310792A (en) * | 1978-06-30 | 1982-01-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor voltage regulator |
JPS56103448A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Semiconductor ic device |
JPH01198071A (ja) * | 1988-02-03 | 1989-08-09 | Mitsubishi Electric Corp | クリップダイオード内蔵形トランジスタ |
DE3832750A1 (de) * | 1988-09-27 | 1990-03-29 | Asea Brown Boveri | Leistungshalbleiterbauelement |
DE4240027A1 (de) * | 1992-11-28 | 1994-06-01 | Asea Brown Boveri | MOS-gesteuerte Diode |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503784A (nl) * | 1973-05-16 | 1975-01-16 | ||
JPS5010105A (nl) * | 1973-05-24 | 1975-02-01 |
-
1977
- 1977-04-21 NL NL7704389A patent/NL185808C/nl not_active IP Right Cessation
- 1977-04-23 DE DE19772718185 patent/DE2718185A1/de not_active Ceased
- 1977-04-26 GB GB1741177A patent/GB1576457A/en not_active Expired
- 1977-04-26 JP JP4746577A patent/JPS52139385A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS52139385A (en) | 1977-11-21 |
NL185808C (nl) | 1990-07-16 |
DE2718185A1 (de) | 1977-11-10 |
NL185808B (nl) | 1990-02-16 |
GB1576457A (en) | 1980-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V4 | Lapsed because of reaching the maxim lifetime of a patent |
Free format text: 970421 |