JPS5639057B2 - - Google Patents

Info

Publication number
JPS5639057B2
JPS5639057B2 JP7290177A JP7290177A JPS5639057B2 JP S5639057 B2 JPS5639057 B2 JP S5639057B2 JP 7290177 A JP7290177 A JP 7290177A JP 7290177 A JP7290177 A JP 7290177A JP S5639057 B2 JPS5639057 B2 JP S5639057B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7290177A
Other languages
Japanese (ja)
Other versions
JPS538069A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS538069A publication Critical patent/JPS538069A/ja
Publication of JPS5639057B2 publication Critical patent/JPS5639057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7290177A 1976-06-21 1977-06-21 Semiconductor device having high breakdown voltage and method of producing same Granted JPS538069A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69801476A 1976-06-21 1976-06-21

Publications (2)

Publication Number Publication Date
JPS538069A JPS538069A (en) 1978-01-25
JPS5639057B2 true JPS5639057B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-09-10

Family

ID=24803556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7290177A Granted JPS538069A (en) 1976-06-21 1977-06-21 Semiconductor device having high breakdown voltage and method of producing same

Country Status (5)

Country Link
JP (1) JPS538069A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2727487C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2356276A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL180265C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE7707190L (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1212404B (it) * 1979-02-22 1989-11-22 Rca Corp Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini.
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
JPS6190463A (ja) * 1984-10-11 1986-05-08 Hitachi Ltd 半導体装置
EP0389863B1 (de) * 1989-03-29 1996-12-18 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit
DE10349908C5 (de) * 2003-10-25 2009-02-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-01-30 1900-01-01
DE1539961A1 (de) * 1965-03-17 1970-01-22 Fuji Electric Co Ltd Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper
DE1276207B (de) * 1966-09-09 1968-08-29 Licentia Gmbh Halbleiterbauelement

Also Published As

Publication number Publication date
FR2356276A1 (fr) 1978-01-20
JPS538069A (en) 1978-01-25
NL180265B (nl) 1986-08-18
NL7706389A (nl) 1977-12-23
DE2727487A1 (de) 1977-12-29
NL180265C (nl) 1987-01-16
FR2356276B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-02-04
DE2727487C2 (de) 1985-05-15
SE7707190L (sv) 1977-12-22

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