JPS5639057B2 - - Google Patents
Info
- Publication number
- JPS5639057B2 JPS5639057B2 JP7290177A JP7290177A JPS5639057B2 JP S5639057 B2 JPS5639057 B2 JP S5639057B2 JP 7290177 A JP7290177 A JP 7290177A JP 7290177 A JP7290177 A JP 7290177A JP S5639057 B2 JPS5639057 B2 JP S5639057B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69801476A | 1976-06-21 | 1976-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS538069A JPS538069A (en) | 1978-01-25 |
| JPS5639057B2 true JPS5639057B2 (ja) | 1981-09-10 |
Family
ID=24803556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7290177A Granted JPS538069A (en) | 1976-06-21 | 1977-06-21 | Semiconductor device having high breakdown voltage and method of producing same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS538069A (ja) |
| DE (1) | DE2727487C2 (ja) |
| FR (1) | FR2356276A1 (ja) |
| NL (1) | NL180265C (ja) |
| SE (1) | SE7707190L (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1212404B (it) * | 1979-02-22 | 1989-11-22 | Rca Corp | Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini. |
| EP0144876B1 (de) * | 1983-12-07 | 1988-03-09 | BBC Brown Boveri AG | Halbleiterbauelement |
| DE3422051C2 (de) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements |
| JPS6190463A (ja) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | 半導体装置 |
| EP0389863B1 (de) * | 1989-03-29 | 1996-12-18 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
| DE10349908C5 (de) * | 2003-10-25 | 2009-02-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1052661A (ja) * | 1963-01-30 | 1900-01-01 | ||
| DE1539961A1 (de) * | 1965-03-17 | 1970-01-22 | Fuji Electric Co Ltd | Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper |
| DE1276207B (de) * | 1966-09-09 | 1968-08-29 | Licentia Gmbh | Halbleiterbauelement |
-
1977
- 1977-06-10 NL NLAANVRAGE7706389,A patent/NL180265C/xx not_active IP Right Cessation
- 1977-06-16 FR FR7718467A patent/FR2356276A1/fr active Granted
- 1977-06-18 DE DE2727487A patent/DE2727487C2/de not_active Expired
- 1977-06-21 JP JP7290177A patent/JPS538069A/ja active Granted
- 1977-06-21 SE SE7707190A patent/SE7707190L/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2727487C2 (de) | 1985-05-15 |
| DE2727487A1 (de) | 1977-12-29 |
| NL7706389A (nl) | 1977-12-23 |
| JPS538069A (en) | 1978-01-25 |
| NL180265C (nl) | 1987-01-16 |
| FR2356276A1 (fr) | 1978-01-20 |
| NL180265B (nl) | 1986-08-18 |
| FR2356276B1 (ja) | 1983-02-04 |
| SE7707190L (sv) | 1977-12-22 |