NL7706389A - Halfgeliederinrichting met hoge doorslag- spanning, alsmede een werkwijze ter ver- vaardiging ervan. - Google Patents
Halfgeliederinrichting met hoge doorslag- spanning, alsmede een werkwijze ter ver- vaardiging ervan.Info
- Publication number
- NL7706389A NL7706389A NL7706389A NL7706389A NL7706389A NL 7706389 A NL7706389 A NL 7706389A NL 7706389 A NL7706389 A NL 7706389A NL 7706389 A NL7706389 A NL 7706389A NL 7706389 A NL7706389 A NL 7706389A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- manufacturing
- sheet
- voltage
- device voltage
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69801476A | 1976-06-21 | 1976-06-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL7706389A true NL7706389A (nl) | 1977-12-23 |
| NL180265B NL180265B (nl) | 1986-08-18 |
| NL180265C NL180265C (nl) | 1987-01-16 |
Family
ID=24803556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE7706389,A NL180265C (nl) | 1976-06-21 | 1977-06-10 | Halfgeleiderinrichting voor hoge spanning. |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS538069A (nl) |
| DE (1) | DE2727487C2 (nl) |
| FR (1) | FR2356276A1 (nl) |
| NL (1) | NL180265C (nl) |
| SE (1) | SE7707190L (nl) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1212404B (it) * | 1979-02-22 | 1989-11-22 | Rca Corp | Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini. |
| DE3469830D1 (en) * | 1983-12-07 | 1988-04-14 | Bbc Brown Boveri & Cie | Semiconductor device |
| DE3422051C2 (de) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements |
| JPS6190463A (ja) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | 半導体装置 |
| DE59010606D1 (de) * | 1989-03-29 | 1997-01-30 | Siemens Ag | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
| DE10349908C5 (de) * | 2003-10-25 | 2009-02-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1052661A (nl) * | 1963-01-30 | 1900-01-01 | ||
| DE1539961A1 (de) * | 1965-03-17 | 1970-01-22 | Fuji Electric Co Ltd | Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper |
| DE1276207B (de) * | 1966-09-09 | 1968-08-29 | Licentia Gmbh | Halbleiterbauelement |
-
1977
- 1977-06-10 NL NLAANVRAGE7706389,A patent/NL180265C/nl not_active IP Right Cessation
- 1977-06-16 FR FR7718467A patent/FR2356276A1/fr active Granted
- 1977-06-18 DE DE2727487A patent/DE2727487C2/de not_active Expired
- 1977-06-21 SE SE7707190A patent/SE7707190L/xx unknown
- 1977-06-21 JP JP7290177A patent/JPS538069A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2356276B1 (nl) | 1983-02-04 |
| DE2727487C2 (de) | 1985-05-15 |
| JPS5639057B2 (nl) | 1981-09-10 |
| SE7707190L (sv) | 1977-12-22 |
| FR2356276A1 (fr) | 1978-01-20 |
| NL180265C (nl) | 1987-01-16 |
| JPS538069A (en) | 1978-01-25 |
| DE2727487A1 (de) | 1977-12-29 |
| NL180265B (nl) | 1986-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| V1 | Lapsed because of non-payment of the annual fee |