NL7706389A - SEMI-SHEET DEVICE WITH HIGH DEVICE VOLTAGE AND A PROCESS FOR MANUFACTURING IT. - Google Patents
SEMI-SHEET DEVICE WITH HIGH DEVICE VOLTAGE AND A PROCESS FOR MANUFACTURING IT.Info
- Publication number
- NL7706389A NL7706389A NL7706389A NL7706389A NL7706389A NL 7706389 A NL7706389 A NL 7706389A NL 7706389 A NL7706389 A NL 7706389A NL 7706389 A NL7706389 A NL 7706389A NL 7706389 A NL7706389 A NL 7706389A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- manufacturing
- sheet
- voltage
- device voltage
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69801476A | 1976-06-21 | 1976-06-21 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7706389A true NL7706389A (en) | 1977-12-23 |
NL180265B NL180265B (en) | 1986-08-18 |
NL180265C NL180265C (en) | 1987-01-16 |
Family
ID=24803556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7706389,A NL180265C (en) | 1976-06-21 | 1977-06-10 | SEMICONDUCTOR FOR HIGH VOLTAGE. |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS538069A (en) |
DE (1) | DE2727487C2 (en) |
FR (1) | FR2356276A1 (en) |
NL (1) | NL180265C (en) |
SE (1) | SE7707190L (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1212404B (en) * | 1979-02-22 | 1989-11-22 | Rca Corp | METHOD OF A SINGLE ATTACK FOR THE FORMATION OF A MESA PRESENTING A MULTIPLE WALL. |
EP0144876B1 (en) * | 1983-12-07 | 1988-03-09 | BBC Brown Boveri AG | Semiconductor device |
DE3422051C2 (en) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silicon semiconductor component with an edge contour produced by etching technology and a method for producing this component |
JPS6190463A (en) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | Semiconductor device |
EP0389863B1 (en) * | 1989-03-29 | 1996-12-18 | Siemens Aktiengesellschaft | Process for manufacturing a high-voltage withstanding planar p-n junction |
DE10349908C5 (en) * | 2003-10-25 | 2009-02-12 | Semikron Elektronik Gmbh & Co. Kg | Method for producing a doubly passivated power semiconductor device having a MESA edge structure |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1052661A (en) * | 1963-01-30 | 1900-01-01 | ||
DE1539961A1 (en) * | 1965-03-17 | 1970-01-22 | Fuji Electric Co Ltd | Semiconductor component with at least two pn junctions in the monocrystalline semiconductor body |
DE1276207B (en) * | 1966-09-09 | 1968-08-29 | Licentia Gmbh | Semiconductor component |
-
1977
- 1977-06-10 NL NLAANVRAGE7706389,A patent/NL180265C/en not_active IP Right Cessation
- 1977-06-16 FR FR7718467A patent/FR2356276A1/en active Granted
- 1977-06-18 DE DE2727487A patent/DE2727487C2/en not_active Expired
- 1977-06-21 SE SE7707190A patent/SE7707190L/en unknown
- 1977-06-21 JP JP7290177A patent/JPS538069A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2356276A1 (en) | 1978-01-20 |
JPS538069A (en) | 1978-01-25 |
DE2727487C2 (en) | 1985-05-15 |
NL180265C (en) | 1987-01-16 |
SE7707190L (en) | 1977-12-22 |
JPS5639057B2 (en) | 1981-09-10 |
NL180265B (en) | 1986-08-18 |
DE2727487A1 (en) | 1977-12-29 |
FR2356276B1 (en) | 1983-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |