FR2356276A1 - Dispositif semi-conducteur a tension de rupture elevee - Google Patents

Dispositif semi-conducteur a tension de rupture elevee

Info

Publication number
FR2356276A1
FR2356276A1 FR7718467A FR7718467A FR2356276A1 FR 2356276 A1 FR2356276 A1 FR 2356276A1 FR 7718467 A FR7718467 A FR 7718467A FR 7718467 A FR7718467 A FR 7718467A FR 2356276 A1 FR2356276 A1 FR 2356276A1
Authority
FR
France
Prior art keywords
semiconductor device
layers
zone
layer
reduced thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7718467A
Other languages
English (en)
French (fr)
Other versions
FR2356276B1 (nl
Inventor
Michael Stuart Adler
Victor Albert Keith Temple
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2356276A1 publication Critical patent/FR2356276A1/fr
Application granted granted Critical
Publication of FR2356276B1 publication Critical patent/FR2356276B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7718467A 1976-06-21 1977-06-16 Dispositif semi-conducteur a tension de rupture elevee Granted FR2356276A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69801476A 1976-06-21 1976-06-21

Publications (2)

Publication Number Publication Date
FR2356276A1 true FR2356276A1 (fr) 1978-01-20
FR2356276B1 FR2356276B1 (nl) 1983-02-04

Family

ID=24803556

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7718467A Granted FR2356276A1 (fr) 1976-06-21 1977-06-16 Dispositif semi-conducteur a tension de rupture elevee

Country Status (5)

Country Link
JP (1) JPS538069A (nl)
DE (1) DE2727487C2 (nl)
FR (1) FR2356276A1 (nl)
NL (1) NL180265C (nl)
SE (1) SE7707190L (nl)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449971A1 (fr) * 1979-02-22 1980-09-19 Rca Corp Procede d'attaque en une fois pour former une structure mesa ayant une paroi a plusieurs etages
EP0144876A2 (de) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Halbleiterbauelement
EP0164645A2 (de) * 1984-06-14 1985-12-18 Asea Brown Boveri Aktiengesellschaft Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelementes
EP0389863A1 (de) * 1989-03-29 1990-10-03 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190463A (ja) * 1984-10-11 1986-05-08 Hitachi Ltd 半導体装置
DE10349908C5 (de) * 2003-10-25 2009-02-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (nl) * 1963-01-30 1900-01-01
DE1539961A1 (de) * 1965-03-17 1970-01-22 Fuji Electric Co Ltd Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper
DE1276207B (de) * 1966-09-09 1968-08-29 Licentia Gmbh Halbleiterbauelement

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449971A1 (fr) * 1979-02-22 1980-09-19 Rca Corp Procede d'attaque en une fois pour former une structure mesa ayant une paroi a plusieurs etages
EP0144876A2 (de) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Halbleiterbauelement
EP0144876A3 (en) * 1983-12-07 1985-07-03 Bbc Aktiengesellschaft Brown, Boveri & Cie. Semiconductor device
EP0164645A2 (de) * 1984-06-14 1985-12-18 Asea Brown Boveri Aktiengesellschaft Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelementes
EP0164645A3 (de) * 1984-06-14 1987-09-30 Asea Brown Boveri Aktiengesellschaft Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelementes
EP0389863A1 (de) * 1989-03-29 1990-10-03 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit

Also Published As

Publication number Publication date
NL180265B (nl) 1986-08-18
SE7707190L (sv) 1977-12-22
DE2727487A1 (de) 1977-12-29
DE2727487C2 (de) 1985-05-15
JPS5639057B2 (nl) 1981-09-10
FR2356276B1 (nl) 1983-02-04
JPS538069A (en) 1978-01-25
NL7706389A (nl) 1977-12-23
NL180265C (nl) 1987-01-16

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Legal Events

Date Code Title Description
ST Notification of lapse