DE2727487C2 - Halbleiterbauelement mit hoher Durchbruchsspannung - Google Patents
Halbleiterbauelement mit hoher DurchbruchsspannungInfo
- Publication number
- DE2727487C2 DE2727487C2 DE2727487A DE2727487A DE2727487C2 DE 2727487 C2 DE2727487 C2 DE 2727487C2 DE 2727487 A DE2727487 A DE 2727487A DE 2727487 A DE2727487 A DE 2727487A DE 2727487 C2 DE2727487 C2 DE 2727487C2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- zone
- component
- layer
- breakdown voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 230000015556 catabolic process Effects 0.000 title claims description 51
- 230000002829 reductive effect Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 description 37
- 230000007704 transition Effects 0.000 description 33
- 239000000758 substrate Substances 0.000 description 21
- 230000005684 electric field Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 241000010972 Ballerus ballerus Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69801476A | 1976-06-21 | 1976-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2727487A1 DE2727487A1 (de) | 1977-12-29 |
| DE2727487C2 true DE2727487C2 (de) | 1985-05-15 |
Family
ID=24803556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2727487A Expired DE2727487C2 (de) | 1976-06-21 | 1977-06-18 | Halbleiterbauelement mit hoher Durchbruchsspannung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS538069A (nl) |
| DE (1) | DE2727487C2 (nl) |
| FR (1) | FR2356276A1 (nl) |
| NL (1) | NL180265C (nl) |
| SE (1) | SE7707190L (nl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10349908A1 (de) * | 2003-10-25 | 2005-06-02 | Semikron Elektronik Gmbh | Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1212404B (it) * | 1979-02-22 | 1989-11-22 | Rca Corp | Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini. |
| EP0144876B1 (de) * | 1983-12-07 | 1988-03-09 | BBC Brown Boveri AG | Halbleiterbauelement |
| DE3422051C2 (de) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements |
| JPS6190463A (ja) * | 1984-10-11 | 1986-05-08 | Hitachi Ltd | 半導体装置 |
| DE59010606D1 (de) * | 1989-03-29 | 1997-01-30 | Siemens Ag | Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1052661A (nl) * | 1963-01-30 | 1900-01-01 | ||
| DE1539961A1 (de) * | 1965-03-17 | 1970-01-22 | Fuji Electric Co Ltd | Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper |
| DE1276207B (de) * | 1966-09-09 | 1968-08-29 | Licentia Gmbh | Halbleiterbauelement |
-
1977
- 1977-06-10 NL NLAANVRAGE7706389,A patent/NL180265C/nl not_active IP Right Cessation
- 1977-06-16 FR FR7718467A patent/FR2356276A1/fr active Granted
- 1977-06-18 DE DE2727487A patent/DE2727487C2/de not_active Expired
- 1977-06-21 JP JP7290177A patent/JPS538069A/ja active Granted
- 1977-06-21 SE SE7707190A patent/SE7707190L/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10349908A1 (de) * | 2003-10-25 | 2005-06-02 | Semikron Elektronik Gmbh | Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung |
| DE10349908B4 (de) * | 2003-10-25 | 2007-08-16 | Semikron Elektronik Gmbh & Co. Kg | Zweifach passiviertes Leistungshalbleiterbauelement mit einer MESA Randstruktur und Verfahren zu dessen Herstellung |
| DE10349908C5 (de) * | 2003-10-25 | 2009-02-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur |
Also Published As
| Publication number | Publication date |
|---|---|
| NL180265B (nl) | 1986-08-18 |
| SE7707190L (sv) | 1977-12-22 |
| DE2727487A1 (de) | 1977-12-29 |
| JPS5639057B2 (nl) | 1981-09-10 |
| FR2356276B1 (nl) | 1983-02-04 |
| JPS538069A (en) | 1978-01-25 |
| NL7706389A (nl) | 1977-12-23 |
| FR2356276A1 (fr) | 1978-01-20 |
| NL180265C (nl) | 1987-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2439875C2 (de) | Halbleiterbauelement mit negativer Widerstandscharakteristik | |
| DE3136682C2 (nl) | ||
| DE2611338C3 (de) | Feldeffekttransistor mit sehr kurzer Kanallange | |
| DE4219319A1 (de) | Mos-fet und herstellungsverfahren dafuer | |
| DE4013643A1 (de) | Bipolartransistor mit isolierter steuerelektrode und verfahren zu seiner herstellung | |
| DE1283399B (de) | Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode | |
| DE2241600A1 (de) | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung | |
| DE2160462C2 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE2607203B2 (de) | Feldeffekttransistor vom Anreicherungstyp | |
| DE2527621B2 (de) | Feldeffekt-Halbleiterbauelement | |
| DE2549614C3 (de) | Halbleiterschalter | |
| DE2719219C2 (de) | Mit Hilfe einer Steuerelektrode abschaltbare Thyristortriode | |
| DE2503864B2 (de) | Halbleiterbauelement | |
| DE1811492A1 (de) | Feldeffekttransistor | |
| DE112006002377B4 (de) | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung | |
| DE2727487C2 (de) | Halbleiterbauelement mit hoher Durchbruchsspannung | |
| DE2031082C2 (de) | Planares Halbleiterbauelement | |
| DE1951243A1 (de) | MOS-Kapazitaetsdiode | |
| DE1274677B (de) | Verfahren zum Modulieren eines elektromagnetischen Strahlungsbuendels und Vorrichtung zu seiner Durchfuehrung | |
| DE1514350B1 (de) | Feldeffekttransistor mit einem mehrere parallele Teilstromwege enthaltenden Stromweg steuerbarer Leitfaehigkeit | |
| DE2447536C2 (de) | Halbleiterlaser | |
| DE1539090B1 (de) | Integrierte Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE1544228B2 (de) | Verfahren zum dotieren von halbleitermaterial | |
| EP1003218A1 (de) | Halbleiteranordnungen mit einer Schottky-Diode und einer Diode mit einem hochdotierten Bereich und entsprechende Herstellungsverfahren | |
| DE3230510A1 (de) | Variabler mis-widerstand |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| D2 | Grant after examination | ||
| 8363 | Opposition against the patent | ||
| 8339 | Ceased/non-payment of the annual fee |