JPS538069A - Semiconductor device having high breakdown voltage and method of producing same - Google Patents

Semiconductor device having high breakdown voltage and method of producing same

Info

Publication number
JPS538069A
JPS538069A JP7290177A JP7290177A JPS538069A JP S538069 A JPS538069 A JP S538069A JP 7290177 A JP7290177 A JP 7290177A JP 7290177 A JP7290177 A JP 7290177A JP S538069 A JPS538069 A JP S538069A
Authority
JP
Japan
Prior art keywords
semiconductor device
breakdown voltage
high breakdown
producing same
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7290177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5639057B2 (nl
Inventor
Suchiyuaato Adoraa Mitsuchieru
Arubaato Keisu Tenpur Buikutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS538069A publication Critical patent/JPS538069A/ja
Publication of JPS5639057B2 publication Critical patent/JPS5639057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7290177A 1976-06-21 1977-06-21 Semiconductor device having high breakdown voltage and method of producing same Granted JPS538069A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69801476A 1976-06-21 1976-06-21

Publications (2)

Publication Number Publication Date
JPS538069A true JPS538069A (en) 1978-01-25
JPS5639057B2 JPS5639057B2 (nl) 1981-09-10

Family

ID=24803556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7290177A Granted JPS538069A (en) 1976-06-21 1977-06-21 Semiconductor device having high breakdown voltage and method of producing same

Country Status (5)

Country Link
JP (1) JPS538069A (nl)
DE (1) DE2727487C2 (nl)
FR (1) FR2356276A1 (nl)
NL (1) NL180265C (nl)
SE (1) SE7707190L (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190463A (ja) * 1984-10-11 1986-05-08 Hitachi Ltd 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1212404B (it) * 1979-02-22 1989-11-22 Rca Corp Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini.
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
DE59010606D1 (de) * 1989-03-29 1997-01-30 Siemens Ag Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit
DE10349908C5 (de) * 2003-10-25 2009-02-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (nl) * 1963-01-30 1900-01-01
DE1539961A1 (de) * 1965-03-17 1970-01-22 Fuji Electric Co Ltd Halbleiterbauelement mit mindestens zwei pn-UEbergaengen im einkristallinen Halbleiterkoerper
DE1276207B (de) * 1966-09-09 1968-08-29 Licentia Gmbh Halbleiterbauelement

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190463A (ja) * 1984-10-11 1986-05-08 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
NL180265B (nl) 1986-08-18
SE7707190L (sv) 1977-12-22
DE2727487A1 (de) 1977-12-29
DE2727487C2 (de) 1985-05-15
JPS5639057B2 (nl) 1981-09-10
FR2356276B1 (nl) 1983-02-04
NL7706389A (nl) 1977-12-23
FR2356276A1 (fr) 1978-01-20
NL180265C (nl) 1987-01-16

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