FR2393423A1 - Dispositif a semi-conducteur du type plan - Google Patents

Dispositif a semi-conducteur du type plan

Info

Publication number
FR2393423A1
FR2393423A1 FR7815677A FR7815677A FR2393423A1 FR 2393423 A1 FR2393423 A1 FR 2393423A1 FR 7815677 A FR7815677 A FR 7815677A FR 7815677 A FR7815677 A FR 7815677A FR 2393423 A1 FR2393423 A1 FR 2393423A1
Authority
FR
France
Prior art keywords
semiconductor device
type semiconductor
plan
insulating layer
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7815677A
Other languages
English (en)
Other versions
FR2393423B1 (fr
Inventor
Vincenzo Prestileo
Paolo Carmina
Mario Foroni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2393423A1 publication Critical patent/FR2393423A1/fr
Application granted granted Critical
Publication of FR2393423B1 publication Critical patent/FR2393423B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un dispositif à semi-conducteur du type plan. Il est caractérisé par le fait qu'il comprend au moins un écran en un matériau semi-conducteur polycristallin du premier type de conductivité comportant une première partie au contact d'une première zone du semi-conducteur, par une ouverture de la couche isolante et une seconde partie incorporée à cette couche isolante s'étendant parallèlement à la surface, en faisant saillie sur la seconde zone au-dessus de la ligne d'intersection de la jonction sur toute la longueur de cette ligne. L'invention s'applique à la fabrication de matériaux électroniques.
FR7815677A 1977-05-30 1978-05-26 Dispositif a semi-conducteur du type plan Granted FR2393423A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2412777A IT1085486B (it) 1977-05-30 1977-05-30 Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni

Publications (2)

Publication Number Publication Date
FR2393423A1 true FR2393423A1 (fr) 1978-12-29
FR2393423B1 FR2393423B1 (fr) 1982-07-09

Family

ID=11212108

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815677A Granted FR2393423A1 (fr) 1977-05-30 1978-05-26 Dispositif a semi-conducteur du type plan

Country Status (4)

Country Link
DE (1) DE2823629C2 (fr)
FR (1) FR2393423A1 (fr)
GB (1) GB1569726A (fr)
IT (1) IT1085486B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0086010A1 (fr) * 1982-02-08 1983-08-17 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur à intensité du champ de surface réduite
EP0160941A2 (fr) * 1984-05-07 1985-11-13 General Electric Company Système d'interconnexion à haute tension pour un circuit intégré semi-conducteur
EP0339322A2 (fr) * 1988-04-27 1989-11-02 STMicroelectronics S.r.l. Circuit intégré haute tension avec jonction d'isolation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2598446B2 (ja) * 1988-01-21 1997-04-09 パイオニア株式会社 Ｍｉｓ−ｆｅｔ
US5258641A (en) * 1989-12-28 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same
JP2513874B2 (ja) * 1989-12-28 1996-07-03 三菱電機株式会社 半導体装置およびその製造方法
US5420457A (en) * 1993-11-12 1995-05-30 At&T Corp. Lateral high-voltage PNP transistor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2099704A7 (fr) * 1970-07-31 1972-03-17 Fairchild Camera Instr Co
DE2154122A1 (de) * 1970-10-30 1972-05-04 Motorola Inc Halbleiteranordnung mit Hoch spannungspassivierung und Verfahren zu deren Herstellung
FR2153414A1 (fr) * 1971-09-22 1973-05-04 Philips Nv
FR2204045A1 (fr) * 1972-10-21 1974-05-17 Itt
DE2516877A1 (de) * 1974-04-18 1975-10-23 Sony Corp Halbleiterbauelement
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2099704A7 (fr) * 1970-07-31 1972-03-17 Fairchild Camera Instr Co
DE2154122A1 (de) * 1970-10-30 1972-05-04 Motorola Inc Halbleiteranordnung mit Hoch spannungspassivierung und Verfahren zu deren Herstellung
FR2153414A1 (fr) * 1971-09-22 1973-05-04 Philips Nv
FR2204045A1 (fr) * 1972-10-21 1974-05-17 Itt
DE2516877A1 (de) * 1974-04-18 1975-10-23 Sony Corp Halbleiterbauelement
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0086010A1 (fr) * 1982-02-08 1983-08-17 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur à intensité du champ de surface réduite
EP0160941A2 (fr) * 1984-05-07 1985-11-13 General Electric Company Système d'interconnexion à haute tension pour un circuit intégré semi-conducteur
EP0160941A3 (fr) * 1984-05-07 1987-03-25 General Electric Company Système d'interconnexion à haute tension pour un circuit intégré semi-conducteur
EP0339322A2 (fr) * 1988-04-27 1989-11-02 STMicroelectronics S.r.l. Circuit intégré haute tension avec jonction d'isolation
EP0339322A3 (en) * 1988-04-27 1990-06-13 Sgs-Thomson Microelectronics S.R.L. High-voltage integrated circuit with junction isolation

Also Published As

Publication number Publication date
DE2823629C2 (de) 1982-12-02
FR2393423B1 (fr) 1982-07-09
GB1569726A (en) 1980-06-18
IT1085486B (it) 1985-05-28
DE2823629A1 (de) 1978-12-07

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