FR2204045A1 - - Google Patents

Info

Publication number
FR2204045A1
FR2204045A1 FR7337186A FR7337186A FR2204045A1 FR 2204045 A1 FR2204045 A1 FR 2204045A1 FR 7337186 A FR7337186 A FR 7337186A FR 7337186 A FR7337186 A FR 7337186A FR 2204045 A1 FR2204045 A1 FR 2204045A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7337186A
Other versions
FR2204045B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2204045A1 publication Critical patent/FR2204045A1/fr
Application granted granted Critical
Publication of FR2204045B1 publication Critical patent/FR2204045B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7337186A 1972-10-21 1973-10-18 Expired FR2204045B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2251823A DE2251823A1 (de) 1972-10-21 1972-10-21 Halbleiterelement und herstellungsverfahren

Publications (2)

Publication Number Publication Date
FR2204045A1 true FR2204045A1 (fr) 1974-05-17
FR2204045B1 FR2204045B1 (fr) 1977-05-27

Family

ID=5859760

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7337186A Expired FR2204045B1 (fr) 1972-10-21 1973-10-18

Country Status (7)

Country Link
US (1) US3869786A (fr)
JP (1) JPS4975077A (fr)
AU (1) AU6136473A (fr)
DE (1) DE2251823A1 (fr)
FR (1) FR2204045B1 (fr)
IT (1) IT995885B (fr)
NL (1) NL7314500A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2393423A1 (fr) * 1977-05-30 1978-12-29 Ates Componenti Elettron Dispositif a semi-conducteur du type plan
EP0113517A2 (fr) * 1982-11-29 1984-07-18 Fujitsu Limited Procédé pour la formation d'une région d'isolation

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219379A (en) * 1978-09-25 1980-08-26 Mostek Corporation Method for making a semiconductor device
US4268951A (en) * 1978-11-13 1981-05-26 Rockwell International Corporation Submicron semiconductor devices
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
JP3594779B2 (ja) 1997-06-24 2004-12-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US6190952B1 (en) * 1999-03-03 2001-02-20 Advanced Micro Devices, Inc. Multiple semiconductor-on-insulator threshold voltage circuit
US6455903B1 (en) 2000-01-26 2002-09-24 Advanced Micro Devices, Inc. Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098321A1 (fr) * 1970-07-10 1972-03-10 Philips Nv
FR2130351A1 (fr) * 1971-03-19 1972-11-03 Itt

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
US3815223A (en) * 1971-02-08 1974-06-11 Signetics Corp Method for making semiconductor structure with dielectric and air isolation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098321A1 (fr) * 1970-07-10 1972-03-10 Philips Nv
FR2130351A1 (fr) * 1971-03-19 1972-11-03 Itt

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2393423A1 (fr) * 1977-05-30 1978-12-29 Ates Componenti Elettron Dispositif a semi-conducteur du type plan
EP0113517A2 (fr) * 1982-11-29 1984-07-18 Fujitsu Limited Procédé pour la formation d'une région d'isolation
EP0113517A3 (en) * 1982-11-29 1986-06-11 Fujitsu Limited Method for forming an isolation region

Also Published As

Publication number Publication date
DE2251823A1 (de) 1974-05-02
US3869786A (en) 1975-03-11
NL7314500A (fr) 1974-04-23
JPS4975077A (fr) 1974-07-19
FR2204045B1 (fr) 1977-05-27
IT995885B (it) 1975-11-20
AU6136473A (en) 1975-04-17

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Legal Events

Date Code Title Description
ST Notification of lapse