FR2098321A1 - - Google Patents

Info

Publication number
FR2098321A1
FR2098321A1 FR7125295A FR7125295A FR2098321A1 FR 2098321 A1 FR2098321 A1 FR 2098321A1 FR 7125295 A FR7125295 A FR 7125295A FR 7125295 A FR7125295 A FR 7125295A FR 2098321 A1 FR2098321 A1 FR 2098321A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7125295A
Other versions
FR2098321B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2098321A1 publication Critical patent/FR2098321A1/fr
Application granted granted Critical
Publication of FR2098321B1 publication Critical patent/FR2098321B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
FR7125295A 1970-07-10 1971-07-09 Expired FR2098321B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010206,A NL170348C (nl) 1970-07-10 1970-07-10 Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.

Publications (2)

Publication Number Publication Date
FR2098321A1 true FR2098321A1 (fr) 1972-03-10
FR2098321B1 FR2098321B1 (fr) 1976-05-28

Family

ID=19810546

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7125295A Expired FR2098321B1 (fr) 1970-07-10 1971-07-09

Country Status (13)

Country Link
US (1) US3755001A (fr)
JP (1) JPS509390B1 (fr)
AT (1) AT344245B (fr)
BE (1) BE769731A (fr)
BR (1) BR7104397D0 (fr)
CA (1) CA925226A (fr)
CH (1) CH531254A (fr)
DE (1) DE2133978C3 (fr)
ES (1) ES393037A1 (fr)
FR (1) FR2098321B1 (fr)
GB (1) GB1353489A (fr)
NL (1) NL170348C (fr)
SE (1) SE361779B (fr)

Cited By (8)

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FR2198257A1 (fr) * 1972-08-31 1974-03-29 Texas Instruments Inc
FR2202368A1 (fr) * 1972-10-04 1974-05-03 Hitachi Ltd
FR2204045A1 (fr) * 1972-10-21 1974-05-17 Itt
FR2363889A1 (fr) * 1976-09-03 1978-03-31 Fairchild Camera Instr Co Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes
EP0004298A1 (fr) * 1978-03-02 1979-10-03 Western Electric Company, Incorporated Méthode de fabrication d'isolation et de contact vers des couches enterrées de structures semiconductrices
EP0072966A2 (fr) * 1981-08-27 1983-03-02 International Business Machines Corporation Structure de circuit intégré et procédé pour la formation d'une structure d'isolation encastrée pour circuits intégrés
EP0091507A2 (fr) * 1982-02-03 1983-10-19 Kabushiki Kaisha Toshiba Procédé pour la fabrication d'un dispositif semi-conducteur comportant des régions d'isolation diélectrique
EP0450401A2 (fr) * 1990-03-20 1991-10-09 Kabushiki Kaisha Toshiba Procédé pour la fabrication d'un dispositif mémoire non-volatile à semi-conducteur

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US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US6979877B1 (en) * 1965-09-28 2005-12-27 Li Chou H Solid-state device
JPS5312158B1 (fr) * 1971-06-05 1978-04-27
NL7113561A (fr) * 1971-10-02 1973-04-04
US3968562A (en) * 1971-11-25 1976-07-13 U.S. Philips Corporation Method of manufacturing a semiconductor device
US3999213A (en) * 1972-04-14 1976-12-21 U.S. Philips Corporation Semiconductor device and method of manufacturing the device
US3945030A (en) * 1973-01-15 1976-03-16 Signetics Corporation Semiconductor structure having contact openings with sloped side walls
JPS5317390B2 (fr) * 1973-03-23 1978-06-08 Mitsubishi Electric Corp
US3956527A (en) * 1973-04-16 1976-05-11 Ibm Corporation Dielectrically isolated Schottky Barrier structure and method of forming the same
JPS5918867B2 (ja) * 1973-08-15 1984-05-01 日本電気株式会社 半導体装置
JPS5242634B2 (fr) * 1973-09-03 1977-10-25
GB1437112A (en) * 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
JPS604590B2 (ja) * 1973-10-30 1985-02-05 三菱電機株式会社 半導体装置の製造方法
US3886000A (en) * 1973-11-05 1975-05-27 Ibm Method for controlling dielectric isolation of a semiconductor device
US4047195A (en) * 1973-11-12 1977-09-06 Scientific Micro Systems, Inc. Semiconductor structure
US3920482A (en) * 1974-03-13 1975-11-18 Signetics Corp Method for forming a semiconductor structure having islands isolated by adjacent moats
JPS50131490A (fr) * 1974-04-03 1975-10-17
US3909304A (en) * 1974-05-03 1975-09-30 Western Electric Co Method of doping a semiconductor body
US3920481A (en) * 1974-06-03 1975-11-18 Fairchild Camera Instr Co Process for fabricating insulated gate field effect transistor structure
US3899363A (en) * 1974-06-28 1975-08-12 Ibm Method and device for reducing sidewall conduction in recessed oxide pet arrays
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors
DE2438256A1 (de) * 1974-08-08 1976-02-19 Siemens Ag Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung
DE2445480A1 (de) * 1974-09-24 1976-04-01 Ibm Deutschland Verfahren zur herstellung eines leistungstransistors
US4046595A (en) * 1974-10-18 1977-09-06 Matsushita Electronics Corporation Method for forming semiconductor devices
US4023195A (en) * 1974-10-23 1977-05-10 Smc Microsystems Corporation MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions
JPS5171677A (en) * 1974-12-18 1976-06-21 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS51113471A (en) * 1975-03-31 1976-10-06 Nec Corp The manufacturing method of flat-shaped field-effect transistor
US4044454A (en) * 1975-04-16 1977-08-30 Ibm Corporation Method for forming integrated circuit regions defined by recessed dielectric isolation
JPS51129181A (en) * 1975-05-02 1976-11-10 Toshiba Corp Method of semiconductor device
US3966514A (en) * 1975-06-30 1976-06-29 Ibm Corporation Method for forming dielectric isolation combining dielectric deposition and thermal oxidation
JPS5253679A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Productin of semiconductor device
JPS5272189A (en) * 1975-12-12 1977-06-16 Matsushita Electric Ind Co Ltd Production of semiconductor device
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
JPS52130572A (en) * 1976-04-26 1977-11-01 Nippon Telegr & Teleph Corp <Ntt> Preparation of mis type semiconductor circuit device
JPS6041470B2 (ja) * 1976-06-15 1985-09-17 松下電器産業株式会社 半導体装置の製造方法
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
US4219369A (en) * 1977-09-30 1980-08-26 Hitachi, Ltd. Method of making semiconductor integrated circuit device
FR2422257A1 (fr) * 1977-11-28 1979-11-02 Silicium Semiconducteur Ssc Procede de sillonnage et de glassiviation et nouvelle structure de sillon
US4170492A (en) * 1978-04-18 1979-10-09 Texas Instruments Incorporated Method of selective oxidation in manufacture of semiconductor devices
JPS5512743A (en) * 1978-07-12 1980-01-29 Nec Corp Semiconductor integrated circuit manufacturing method
US4256514A (en) * 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
DE3023410A1 (de) * 1980-06-23 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von mos-strukturen
US4295266A (en) * 1980-06-30 1981-10-20 Rca Corporation Method of manufacturing bulk CMOS integrated circuits
JPS5773956A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Glass coated semiconductor device
US4404579A (en) * 1980-10-28 1983-09-13 Inc. Motorola Semiconductor device having reduced capacitance and method of fabrication thereof
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US4372033A (en) * 1981-09-08 1983-02-08 Ncr Corporation Method of making coplanar MOS IC structures
US4563227A (en) * 1981-12-08 1986-01-07 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a semiconductor device
US4403396A (en) * 1981-12-24 1983-09-13 Gte Laboratories Incorporated Semiconductor device design and process
DE3322669C2 (de) * 1982-07-08 1986-04-24 General Electric Co., Schenectady, N.Y. Verfahren zum Herstellen einer Halbleitervorrichtung mit isolierten Gateelektroden
US4591890A (en) * 1982-12-20 1986-05-27 Motorola Inc. Radiation hard MOS devices and methods for the manufacture thereof
FR2598557B1 (fr) * 1986-05-09 1990-03-30 Seiko Epson Corp Procede de fabrication d'une region d'isolation d'element d'un dispositif a semi-conducteurs
IT1225636B (it) * 1988-12-15 1990-11-22 Sgs Thomson Microelectronics Metodo di scavo con profilo di fondo arrotondato per strutture di isolamento incassate nel silicio
JPH039367U (fr) * 1989-06-15 1991-01-29
KR0138234B1 (ko) * 1994-02-24 1998-04-28 김광호 고전압 모오스 트랜지스터의 구조
US5656510A (en) 1994-11-22 1997-08-12 Lucent Technologies Inc. Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US6177333B1 (en) * 1999-01-14 2001-01-23 Micron Technology, Inc. Method for making a trench isolation for semiconductor devices
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
US9105790B2 (en) * 2009-11-05 2015-08-11 The Boeing Company Detector for plastic optical fiber networks
CN102569492B (zh) * 2010-12-17 2014-11-05 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102637767B (zh) * 2011-02-15 2015-03-18 上海凯世通半导体有限公司 太阳能电池的制作方法以及太阳能电池
CN102569491B (zh) * 2010-12-17 2014-07-23 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102637766B (zh) * 2011-02-15 2014-04-30 上海凯世通半导体有限公司 太阳能晶片掺杂方法、掺杂晶片、太阳能电池及制作方法
CN103208557A (zh) * 2012-01-13 2013-07-17 上海凯世通半导体有限公司 太阳能电池的制作方法及太阳能电池
CN105225933B (zh) * 2014-05-28 2018-06-26 上海凯世通半导体股份有限公司 掺杂方法

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US3376172A (en) * 1963-05-28 1968-04-02 Globe Union Inc Method of forming a semiconductor device with a depletion area
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
FR1567408A (fr) * 1967-05-16 1969-05-16
FR1573306A (fr) * 1967-05-26 1969-07-04

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NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US3376172A (en) * 1963-05-28 1968-04-02 Globe Union Inc Method of forming a semiconductor device with a depletion area
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
FR1567408A (fr) * 1967-05-16 1969-05-16
FR1573306A (fr) * 1967-05-26 1969-07-04

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
(ISOLATION TECHNIQUES"V.Y.DOO ET AL,PAGES 659-660 *
*REVUE US"IBM TECHNICAL DISCLOSURE BULLETIN" VOLUME 8,FEVRIER 1966"MAKING CONTACTS TO BURIED SUBCOLLECTORS IN INTEGRATED CIRCUIT DEVICES" V.Y.DOO ET AL,PAGES 1296-1297) *
ISOLATION TECHNIQUES"V.Y.DOO ET AL,PAGES 659-660 *
REVUE US"IBM TECHNICAL DISCLOSURE BULLETIN" *
V.Y.DOO ET AL,PAGES 1296-1297) *
VOLUME 8,FEVRIER 1966"MAKING CONTACTS TO BURIED SUBCOLLECTORS IN INTEGRATED CIRCUIT DEVICES" *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2198257A1 (fr) * 1972-08-31 1974-03-29 Texas Instruments Inc
FR2202368A1 (fr) * 1972-10-04 1974-05-03 Hitachi Ltd
FR2204045A1 (fr) * 1972-10-21 1974-05-17 Itt
FR2363889A1 (fr) * 1976-09-03 1978-03-31 Fairchild Camera Instr Co Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes
EP0004298A1 (fr) * 1978-03-02 1979-10-03 Western Electric Company, Incorporated Méthode de fabrication d'isolation et de contact vers des couches enterrées de structures semiconductrices
EP0072966A2 (fr) * 1981-08-27 1983-03-02 International Business Machines Corporation Structure de circuit intégré et procédé pour la formation d'une structure d'isolation encastrée pour circuits intégrés
EP0072966A3 (en) * 1981-08-27 1986-06-11 International Business Machines Corporation Integrated circuit structure and method for forming a recessed isolation structure for integrated circuits
EP0091507A2 (fr) * 1982-02-03 1983-10-19 Kabushiki Kaisha Toshiba Procédé pour la fabrication d'un dispositif semi-conducteur comportant des régions d'isolation diélectrique
EP0091507A3 (en) * 1982-02-03 1986-04-16 Kabushiki Kaisha Toshiba Method of manufacturing a semi-conductor device comprising dielectric isolation regions
EP0450401A2 (fr) * 1990-03-20 1991-10-09 Kabushiki Kaisha Toshiba Procédé pour la fabrication d'un dispositif mémoire non-volatile à semi-conducteur
EP0450401A3 (fr) * 1990-03-20 1991-10-23 Kabushiki Kaisha Toshiba Procédé pour la fabrication d'un dispositif mémoire non-volatile à semi-conducteur
US5208173A (en) * 1990-03-20 1993-05-04 Kabushiki Kaisha Toshiba Method of manufacturing non-volatile semiconductor memory device

Also Published As

Publication number Publication date
NL170348B (nl) 1982-05-17
CH531254A (de) 1972-11-30
AT344245B (de) 1978-07-10
DE2133978A1 (de) 1972-01-13
SE361779B (fr) 1973-11-12
ES393037A1 (es) 1973-08-16
JPS509390B1 (fr) 1975-04-12
NL7010206A (fr) 1972-01-12
NL170348C (nl) 1982-10-18
FR2098321B1 (fr) 1976-05-28
DE2133978C3 (de) 1985-06-27
CA925226A (en) 1973-04-24
JPS472519A (fr) 1972-02-07
US3755001A (en) 1973-08-28
DE2133978B2 (de) 1979-09-06
BR7104397D0 (pt) 1973-04-05
GB1353489A (en) 1974-05-15
BE769731A (fr) 1972-01-10
ATA593971A (de) 1977-11-15

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