FR2363889A1 - Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes - Google Patents

Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes

Info

Publication number
FR2363889A1
FR2363889A1 FR7726691A FR7726691A FR2363889A1 FR 2363889 A1 FR2363889 A1 FR 2363889A1 FR 7726691 A FR7726691 A FR 7726691A FR 7726691 A FR7726691 A FR 7726691A FR 2363889 A1 FR2363889 A1 FR 2363889A1
Authority
FR
France
Prior art keywords
integrated circuits
conductive regions
resulting structures
buried conductive
manufacturing buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7726691A
Other languages
English (en)
Other versions
FR2363889B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of FR2363889A1 publication Critical patent/FR2363889A1/fr
Application granted granted Critical
Publication of FR2363889B1 publication Critical patent/FR2363889B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Structure semi-conductrice isolée à l'oxyde, comportant une couche épitaxiale formée sur un substrat monocristallin, une jonction PN s'étendant latéralement enterrée dans ladite structure, et des régions d'isolement oxydées s'étendant à travers ladite couche épitaxiale jusqu'à ladite jonction PN, de manière à former une pluralité de poches électriquement isolées de matériau semi-conducteur. Un dopant du type << prédéposition de champ >> est disposé dans les régions du matériau semi-conducteur directement adjacentes aux régions d'isolement oxydées. Application notamment à la fabrication des circuits intégrés.
FR7726691A 1976-09-03 1977-09-02 Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes Granted FR2363889A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/720,550 US4149177A (en) 1976-09-03 1976-09-03 Method of fabricating conductive buried regions in integrated circuits and the resulting structures

Publications (2)

Publication Number Publication Date
FR2363889A1 true FR2363889A1 (fr) 1978-03-31
FR2363889B1 FR2363889B1 (fr) 1983-01-14

Family

ID=24894399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7726691A Granted FR2363889A1 (fr) 1976-09-03 1977-09-02 Procede de fabrication de regions enterrees conductrices dans des circuits integres et structures resultantes

Country Status (6)

Country Link
US (1) US4149177A (fr)
JP (1) JPS5331984A (fr)
CA (1) CA1085064A (fr)
DE (1) DE2738049A1 (fr)
FR (1) FR2363889A1 (fr)
GB (1) GB1577420A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2413782A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde
US4231056A (en) * 1978-10-20 1980-10-28 Harris Corporation Moat resistor ram cell
US4277882A (en) * 1978-12-04 1981-07-14 Fairchild Camera And Instrument Corporation Method of producing a metal-semiconductor field-effect transistor
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4961102A (en) * 1982-01-04 1990-10-02 Shideler Jay A Junction programmable vertical transistor with high performance transistor
JPS58199537A (ja) * 1982-05-14 1983-11-19 Matsushita Electric Ind Co Ltd 高抵抗半導体層の製造方法
US4549927A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098321A1 (fr) * 1970-07-10 1972-03-10 Philips Nv
FR2132347A1 (fr) * 1971-04-03 1972-11-17 Philips Nv
FR2290037A1 (fr) * 1974-10-29 1976-05-28 Fairchild Camera Instr Co Procede combine pour fabriquer des transistors bipolaires verticaux isoles par oxyde et des transistors bipolaires lateraux complementaires isoles par oxyde et structures ainsi fabriquees

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
JPS4975280A (fr) * 1972-11-24 1974-07-19
US3975752A (en) * 1973-04-04 1976-08-17 Harris Corporation Junction field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2098321A1 (fr) * 1970-07-10 1972-03-10 Philips Nv
FR2132347A1 (fr) * 1971-04-03 1972-11-17 Philips Nv
FR2290037A1 (fr) * 1974-10-29 1976-05-28 Fairchild Camera Instr Co Procede combine pour fabriquer des transistors bipolaires verticaux isoles par oxyde et des transistors bipolaires lateraux complementaires isoles par oxyde et structures ainsi fabriquees

Also Published As

Publication number Publication date
FR2363889B1 (fr) 1983-01-14
JPS6224944B2 (fr) 1987-05-30
US4149177A (en) 1979-04-10
CA1085064A (fr) 1980-09-02
DE2738049A1 (de) 1978-03-09
JPS5331984A (en) 1978-03-25
GB1577420A (en) 1980-10-22

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Legal Events

Date Code Title Description
ST Notification of lapse