KR890001232A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR890001232A
KR890001232A KR1019880007587A KR880007587A KR890001232A KR 890001232 A KR890001232 A KR 890001232A KR 1019880007587 A KR1019880007587 A KR 1019880007587A KR 880007587 A KR880007587 A KR 880007587A KR 890001232 A KR890001232 A KR 890001232A
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KR
South Korea
Prior art keywords
layer
semiconductor device
semiconductor
injection
active layer
Prior art date
Application number
KR1019880007587A
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English (en)
Inventor
요하네스 마리누스 반 오프도르프 크리스티아누스
Original Assignee
이반 밀러 레르너
엔.브이.필립스 글로아이람펜파브리켄
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Application filed by 이반 밀러 레르너, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 이반 밀러 레르너
Publication of KR890001232A publication Critical patent/KR890001232A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 발명에 따른 반도체 장치의 개략적 단면도
제2도는 비바이어스 조건내에서의 라인 AB를 따라 취한 제1도의 반도체 장치 에너지 분포도
제3도는 동작조건 내에서의 라인 AB를 따라 취한 제1도의 반도체 장치 에너지 분포도

Claims (7)

  1. 반도체 몸체부를 가지며 반도체 몸체부는 방사 소자를 포함하며 방사 소자는 활성층을 가지고 있으며, 활성층 전자기 방사는 핫 충전 캐리어의 주입에 의해 산출해낼 있고, 그리고 상기 핫 충전 캐리어는 애벌런치 증식에 의해 형성되고, 상기 방사 소자 및 주입 소자의 각각은 단결정선 에피택셜 구조를 포함하는 전자기 방사를 형성하기 위한 반도체 장치에 있어서, 방사 소자의 층 구조 및 주입 소자의 층 구조가 서로 에피택셜적으로 접해있고 그리고 활성층은 활성층 및 주입 소자의 근접층보다 훨씬 큰 밴드 갭을 가지는 반도체 접속층의 수단에 의해 주입 소자에 접속되며, 활성층 및 접속층의 물질은, 각 경계부에서 접속층의 전도대의 하위레벨보다 아래에 놓이는 활성층에서의 전도의 낮은 레벨과 접속층의 가전자대의 상위 레벨보다 위에 놓이는 활성층에서의 가전자대의 상위 레벨에서 선택되어 지는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 주입 소자가 동작조건에서는 역방향으로 바이어스되며 그리고 주입 소자내에서 애벌런치 증식에 의한 핫 충전 캐리어를 공급하는 pN접합을 구비하는 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 주입 소자가 카멜 다이오드를 포함하는 층구조에 의해 구성되어 지는 것을 특징으로 하는 반도체 장치.
  4. 전술한 항중 어느 한 항에 있어서, 방사 소자가 갈륨 질화물의 활성층 및 주입층이 실리콘 층 구조를 갖는 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 접속층이 알루미늄갈륨 질화물로 이루어진 것을 특징으로 하는 반도체 장치.
  6. 제5항에 있어서, 접속층이 0.2㎛ 내지 o.3㎛의 두께를 갖는 것을 특징으로 하는 반도체 장치.
  7. 전술한 항중 어느 한 항에 있어서, 제1클래딩 층을 공급하는 반도체 접속층과 접속도체에 접속되는 접속층과 동일한 조성 및 동일 전도형을 가지는 제2클래딩 층간에 배치된 활성 영역을 가지는 반도체 레이저 방사 소자를 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880007587A 1987-06-26 1988-06-23 반도체 장치 KR890001232A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8701497 1987-06-26
NL8701497A NL8701497A (nl) 1987-06-26 1987-06-26 Halfgeleiderinrichting voor het opwekken van electromagnetische straling.

Publications (1)

Publication Number Publication Date
KR890001232A true KR890001232A (ko) 1989-03-20

Family

ID=19850205

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880007587A KR890001232A (ko) 1987-06-26 1988-06-23 반도체 장치

Country Status (5)

Country Link
US (1) US4903088A (ko)
EP (1) EP0297654A1 (ko)
JP (1) JPH0695588B2 (ko)
KR (1) KR890001232A (ko)
NL (1) NL8701497A (ko)

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JP2650744B2 (ja) * 1988-12-28 1997-09-03 シャープ株式会社 発光ダイオード
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JP2008227073A (ja) * 2007-03-12 2008-09-25 Rohm Co Ltd 窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法
US9425351B2 (en) * 2014-10-06 2016-08-23 Wisconsin Alumni Research Foundation Hybrid heterostructure light emitting devices
US9899556B2 (en) 2015-09-14 2018-02-20 Wisconsin Alumni Research Foundation Hybrid tandem solar cells with improved tunnel junction structures
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Also Published As

Publication number Publication date
JPH0695588B2 (ja) 1994-11-24
JPS6421991A (en) 1989-01-25
US4903088A (en) 1990-02-20
EP0297654A1 (en) 1989-01-04
NL8701497A (nl) 1989-01-16

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