FR2290040A1 - Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication - Google Patents

Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication

Info

Publication number
FR2290040A1
FR2290040A1 FR7532826A FR7532826A FR2290040A1 FR 2290040 A1 FR2290040 A1 FR 2290040A1 FR 7532826 A FR7532826 A FR 7532826A FR 7532826 A FR7532826 A FR 7532826A FR 2290040 A1 FR2290040 A1 FR 2290040A1
Authority
FR
France
Prior art keywords
components
integrated circuit
manufacturing process
circuit including
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7532826A
Other languages
English (en)
French (fr)
Other versions
FR2290040B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2290040A1 publication Critical patent/FR2290040A1/fr
Application granted granted Critical
Publication of FR2290040B1 publication Critical patent/FR2290040B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W74/147—
    • H10P14/662—
    • H10P14/683—
    • H10P14/6903—
    • H10W74/131—
    • H10W74/137—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H10P14/6306—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/6342—
    • H10P14/6682—
    • H10P14/69215—
    • H10P14/6922—
    • H10P14/6929—
    • H10P14/69391—
    • H10P14/69433—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905—Plural dram cells share common contact or common trench
FR7532826A 1974-10-26 1975-10-27 Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication Granted FR2290040A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49123765A JPS6022497B2 (ja) 1974-10-26 1974-10-26 半導体装置

Publications (2)

Publication Number Publication Date
FR2290040A1 true FR2290040A1 (fr) 1976-05-28
FR2290040B1 FR2290040B1 (enExample) 1979-08-17

Family

ID=14868714

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7532826A Granted FR2290040A1 (fr) 1974-10-26 1975-10-27 Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication

Country Status (15)

Country Link
US (1) US4063275A (enExample)
JP (1) JPS6022497B2 (enExample)
AT (1) AT370561B (enExample)
AU (1) AU504667B2 (enExample)
BR (1) BR7506996A (enExample)
CA (1) CA1046650A (enExample)
CH (1) CH608653A5 (enExample)
DE (1) DE2547304A1 (enExample)
DK (1) DK142758B (enExample)
ES (1) ES442102A1 (enExample)
FR (1) FR2290040A1 (enExample)
GB (1) GB1515179A (enExample)
IT (1) IT1044592B (enExample)
NL (1) NL183260C (enExample)
SE (1) SE411606B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2359510A1 (fr) * 1976-07-20 1978-02-17 Siemens Ag Composant a semi-conducteurs comportant une couche de protection realisant une passivation
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
EP0000480A1 (de) * 1977-07-05 1979-02-07 Siemens Aktiengesellschaft Verfahren zum Passivieren von Halbleiterelementen durch Aufbringen einer Siliciumschicht
FR2435127A1 (fr) * 1978-08-14 1980-03-28 Sony Corp Composant semi-conducteur, notamment transistor bipolaire a jonction heterogene
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174252A (en) * 1978-07-26 1979-11-13 Rca Corporation Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
GB2071411B (en) * 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) * 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
AT384121B (de) * 1983-03-28 1987-10-12 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS6042859A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 高耐圧半導体装置の製造方法
JPS61222172A (ja) * 1985-03-15 1986-10-02 Sharp Corp Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
DE69014359T2 (de) * 1989-03-24 1995-05-24 Ibm Halbleitervorrichtung mit einem relativ zu einem vergrabenen Subkollektor selbstausgerichteten Kontakt.
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
US5525831A (en) * 1993-04-05 1996-06-11 Nippondenso Co., Ltd. Semiconductor device with thin film resistor having reduced film thickness sensitivity during trimming process
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
CN1293374C (zh) * 2002-04-17 2007-01-03 北京师范大学 能直接测量波长的新结构光电探测器及其探测方法
CN111816574B (zh) * 2020-05-29 2022-03-04 济宁东方芯电子科技有限公司 一种uv膜模板及利用uv膜模板实现洁净玻璃钝化的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE693141A (enExample) * 1966-01-31 1967-07-03
DE2220807A1 (de) * 1971-04-30 1972-11-16 Texas Instruments Inc Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten
FR2266301A1 (enExample) * 1974-03-30 1975-10-24 Sony Corp

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789258A (en) * 1955-06-29 1957-04-16 Raytheon Mfg Co Intrinsic coatings for semiconductor junctions
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
GB1211354A (en) * 1966-12-01 1970-11-04 Gen Electric Improvements relating to passivated semiconductor devices
DE1614455C3 (de) * 1967-03-16 1979-07-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers
US3419746A (en) * 1967-05-25 1968-12-31 Bell Telephone Labor Inc Light sensitive storage device including diode array
US3440477A (en) * 1967-10-18 1969-04-22 Bell Telephone Labor Inc Multiple readout electron beam device
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3558348A (en) * 1968-04-18 1971-01-26 Bell Telephone Labor Inc Dielectric films for semiconductor devices
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
JPS497870B1 (enExample) * 1969-06-06 1974-02-22
US3878549A (en) * 1970-10-27 1975-04-15 Shumpei Yamazaki Semiconductor memories
NL7204741A (enExample) * 1972-04-08 1973-10-10

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE693141A (enExample) * 1966-01-31 1967-07-03
DE2220807A1 (de) * 1971-04-30 1972-11-16 Texas Instruments Inc Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten
FR2266301A1 (enExample) * 1974-03-30 1975-10-24 Sony Corp

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS, VOLUME 48, NO. 13, 26 JUIN 1975, NEW-YORK, "POLYSILICON LAYER DOPED WITH OXYGEN IMPROVES DEVICES", PAGE 5E ET PAGE 6E *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2359510A1 (fr) * 1976-07-20 1978-02-17 Siemens Ag Composant a semi-conducteurs comportant une couche de protection realisant une passivation
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
EP0000480A1 (de) * 1977-07-05 1979-02-07 Siemens Aktiengesellschaft Verfahren zum Passivieren von Halbleiterelementen durch Aufbringen einer Siliciumschicht
FR2435127A1 (fr) * 1978-08-14 1980-03-28 Sony Corp Composant semi-conducteur, notamment transistor bipolaire a jonction heterogene
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque

Also Published As

Publication number Publication date
NL7512559A (nl) 1976-04-28
CA1046650A (en) 1979-01-16
CH608653A5 (enExample) 1979-01-15
AU8599175A (en) 1977-04-28
NL183260C (nl) 1988-09-01
US4063275A (en) 1977-12-13
DK480275A (enExample) 1976-04-27
FR2290040B1 (enExample) 1979-08-17
DE2547304C2 (enExample) 1988-08-11
DK142758B (da) 1981-01-12
NL183260B (nl) 1988-04-05
IT1044592B (it) 1980-03-31
SE411606B (sv) 1980-01-14
AU504667B2 (en) 1979-10-25
BR7506996A (pt) 1976-08-17
ATA818475A (de) 1982-08-15
GB1515179A (en) 1978-06-21
JPS5149686A (enExample) 1976-04-30
DE2547304A1 (de) 1976-04-29
ES442102A1 (es) 1977-03-16
AT370561B (de) 1983-04-11
SE7511927L (sv) 1976-04-27
JPS6022497B2 (ja) 1985-06-03
DK142758C (enExample) 1981-08-10

Similar Documents

Publication Publication Date Title
FR2290040A1 (fr) Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication
FR2280979A1 (fr) Structure de semi-conducteur et procede de fabrication
BE833858A (fr) Procede de fabrication de circuit imprime et circuit obtenu
DE3067661D1 (en) Interconnection device for integrated semiconductor circuits, and process for its manufacture
BE842511A (fr) Dispositif semi-conducteur et son procede de fabrication
FR2309036A1 (fr) Dispositif semiconducteur et son procede de fabrication
FR2326038A1 (fr) Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant
IT8023688A0 (it) Processo di fabbricazione di circuiti semiconduttori.
BE857125A (fr) Boitier de circuit integre et son procede de fabrication
BE651287A (fr) Procede de fabrication d'elements de circuit integre a semi-conducteurs
BE857663A (fr) Procede de fabrication de circuits integres programmables
BE783737A (fr) Dispositif semiconducteur et procede de fabrication de ce dispositif
FR2316730A1 (fr) Circuit logique integre et son procede de fabrication
BE786089A (fr) Circuits integres monolithiques et leur procede de fabrication
FR2277434A1 (fr) Composant a semi-conducteurs comportant un support dielectrique et son procede de fabrication
FR2319978A1 (fr) Circuits integres semi-conducteurs et procede de preparation
FR2326779A1 (fr) Procede de fabrication de circuits integres
BE789174A (fr) Procede de fabrication de circuits
FR2315973A1 (fr) Procede de fabrication de compositions anti-mousse
FR2321190A1 (fr) Composant semi-conducteur et son procede de fabrication
FR2334205A1 (fr) Dispositif semi-conducteur et son procede de fabrication
FR2308199A1 (fr) Procede de fabrication de composants semi-conducteurs et composants obtenus
FR2280296A1 (fr) Composant electronique et son procede de fabrication
BE836866A (fr) Procede de fabrication de circuits imprimes et circuits imprimes fabriques suivant ce procede
FR2276375A1 (fr) Procede de fabrication de concentre de graisse