FR2382095A1 - Structure de passivation en plusieurs couches et procede de fabrication - Google Patents
Structure de passivation en plusieurs couches et procede de fabricationInfo
- Publication number
- FR2382095A1 FR2382095A1 FR7804587A FR7804587A FR2382095A1 FR 2382095 A1 FR2382095 A1 FR 2382095A1 FR 7804587 A FR7804587 A FR 7804587A FR 7804587 A FR7804587 A FR 7804587A FR 2382095 A1 FR2382095 A1 FR 2382095A1
- Authority
- FR
- France
- Prior art keywords
- layer
- passivation structure
- manufacturing process
- layer passivation
- passivating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000002161 passivation Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'invention concerne un procédé de fabrication d'une structure de passivation en plusieurs couches. Selon l'invention, on forme, sur une surface 20 d'un corps en matériau semi-conducteur 12, une première couche 22 en silicium polycristallin de forte résistivité ; et on dispose sur la couche 22, une seconde couche 24 et une troisième couche 26 en matériau passivant, l'une des seconde et troisième couches étant en un agent passivant particulaire. L'invention s'applique notamment aux semi-conducteurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77174977A | 1977-02-24 | 1977-02-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2382095A1 true FR2382095A1 (fr) | 1978-09-22 |
FR2382095B1 FR2382095B1 (fr) | 1985-10-18 |
Family
ID=25092854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7804587A Expired FR2382095B1 (fr) | 1977-02-24 | 1978-02-17 | Structure de passivation en plusieurs couches et procede de fabrication |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS53105979A (fr) |
BE (1) | BE864271A (fr) |
DE (1) | DE2806492A1 (fr) |
FR (1) | FR2382095B1 (fr) |
GB (1) | GB1552760A (fr) |
IN (1) | IN147578B (fr) |
IT (1) | IT1092729B (fr) |
PL (1) | PL117841B1 (fr) |
SE (1) | SE7801092L (fr) |
YU (1) | YU42276B (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0041684A1 (fr) * | 1980-06-04 | 1981-12-16 | Siemens Aktiengesellschaft | Méthode de préparation de prise de contact de dispositifs en silicium pourvus de couches d'aluminium |
FR2487576A1 (fr) * | 1980-07-24 | 1982-01-29 | Thomson Csf | Procede de fabrication de diodes mesa glassivees |
EP0157590A2 (fr) * | 1984-03-31 | 1985-10-09 | Kabushiki Kaisha Toshiba | Dispositif électronique enrobé |
EP0270220A2 (fr) * | 1986-12-03 | 1988-06-08 | Dow Corning Corporation | Revêtements contenant du SiN pour dispositifs électroniques |
FR2625839A1 (fr) * | 1988-01-13 | 1989-07-13 | Sgs Thomson Microelectronics | Procede de passivation d'un circuit integre |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1250099A (fr) * | 1969-04-14 | 1971-10-20 | ||
FR2266301A1 (fr) * | 1974-03-30 | 1975-10-24 | Sony Corp | |
FR2290040A1 (fr) * | 1974-10-26 | 1976-05-28 | Sony Corp | Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication |
FR2309036A1 (fr) * | 1975-04-21 | 1976-11-19 | Sony Corp | Dispositif semiconducteur et son procede de fabrication |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3895127A (en) * | 1974-04-19 | 1975-07-15 | Rca Corp | Method of selectively depositing glass on semiconductor devices |
NL7500492A (nl) * | 1975-01-16 | 1976-07-20 | Philips Nv | Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze. |
-
1978
- 1978-01-02 IN IN3/CAL/78A patent/IN147578B/en unknown
- 1978-01-11 IT IT19175/78A patent/IT1092729B/it active
- 1978-01-27 YU YU192/78A patent/YU42276B/xx unknown
- 1978-01-30 SE SE7801092A patent/SE7801092L/xx unknown
- 1978-02-16 GB GB6179/78A patent/GB1552760A/en not_active Expired
- 1978-02-16 DE DE19782806492 patent/DE2806492A1/de not_active Ceased
- 1978-02-17 FR FR7804587A patent/FR2382095B1/fr not_active Expired
- 1978-02-21 JP JP1960178A patent/JPS53105979A/ja active Granted
- 1978-02-22 PL PL1978204821A patent/PL117841B1/pl unknown
- 1978-02-23 BE BE185439A patent/BE864271A/fr unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1250099A (fr) * | 1969-04-14 | 1971-10-20 | ||
FR2266301A1 (fr) * | 1974-03-30 | 1975-10-24 | Sony Corp | |
FR2290040A1 (fr) * | 1974-10-26 | 1976-05-28 | Sony Corp | Composant semi-conducteur, circuit integre comprenant de tels composants et procede de fabrication |
FR2309036A1 (fr) * | 1975-04-21 | 1976-11-19 | Sony Corp | Dispositif semiconducteur et son procede de fabrication |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0041684A1 (fr) * | 1980-06-04 | 1981-12-16 | Siemens Aktiengesellschaft | Méthode de préparation de prise de contact de dispositifs en silicium pourvus de couches d'aluminium |
FR2487576A1 (fr) * | 1980-07-24 | 1982-01-29 | Thomson Csf | Procede de fabrication de diodes mesa glassivees |
EP0157590A2 (fr) * | 1984-03-31 | 1985-10-09 | Kabushiki Kaisha Toshiba | Dispositif électronique enrobé |
EP0157590A3 (en) * | 1984-03-31 | 1987-05-27 | Kabushiki Kaisha Toshiba | Packaged electronic device |
EP0270220A2 (fr) * | 1986-12-03 | 1988-06-08 | Dow Corning Corporation | Revêtements contenant du SiN pour dispositifs électroniques |
EP0270220A3 (en) * | 1986-12-03 | 1989-04-26 | Dow Corning Corporation | Sin-containing coatings for electronic devices sin-containing coatings for electronic devices |
FR2625839A1 (fr) * | 1988-01-13 | 1989-07-13 | Sgs Thomson Microelectronics | Procede de passivation d'un circuit integre |
EP0327412A1 (fr) * | 1988-01-13 | 1989-08-09 | STMicroelectronics S.A. | Procédé de passivation d'un circuit intégré |
Also Published As
Publication number | Publication date |
---|---|
YU19278A (en) | 1982-06-30 |
PL117841B1 (en) | 1981-08-31 |
FR2382095B1 (fr) | 1985-10-18 |
IT7819175A0 (it) | 1978-01-11 |
SE7801092L (sv) | 1978-08-25 |
DE2806492A1 (de) | 1978-08-31 |
JPS5626981B2 (fr) | 1981-06-22 |
GB1552760A (en) | 1979-09-19 |
IT1092729B (it) | 1985-07-12 |
IN147578B (fr) | 1980-04-19 |
JPS53105979A (en) | 1978-09-14 |
YU42276B (en) | 1988-08-31 |
PL204821A1 (pl) | 1978-11-06 |
BE864271A (fr) | 1978-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |