FR2429493A1 - Compose de passivation pour un dispositif semi-conducteur, comprenant une couche de nitrure de silicium (si3n4) et une couche de verre au phosphosilicate (psg), et methode de fabrication - Google Patents

Compose de passivation pour un dispositif semi-conducteur, comprenant une couche de nitrure de silicium (si3n4) et une couche de verre au phosphosilicate (psg), et methode de fabrication

Info

Publication number
FR2429493A1
FR2429493A1 FR7915578A FR7915578A FR2429493A1 FR 2429493 A1 FR2429493 A1 FR 2429493A1 FR 7915578 A FR7915578 A FR 7915578A FR 7915578 A FR7915578 A FR 7915578A FR 2429493 A1 FR2429493 A1 FR 2429493A1
Authority
FR
France
Prior art keywords
layer
phosphosilicate glass
si3n4
psg
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7915578A
Other languages
English (en)
Other versions
FR2429493B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2429493A1 publication Critical patent/FR2429493A1/fr
Application granted granted Critical
Publication of FR2429493B1 publication Critical patent/FR2429493B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un composé de passivation pour un circuit intégré du type comprenant un corps en matériau semi-conducteur où sont formés des dispositifs semi-conducteurs. Selon l'invention, il comprend une couche imperméable 55 formée sur la surface du corps en matériau semi-conducteur 12, une couche de verre au phosphosilicate 57 formée directement sur la couche 55, des ouvertures de contact 54 traversant la couche 57 et la couche 55 jusqu'à la région de semi-conducteurs sous-jacente, les bords supérieurs des ouvertures de contact dans la couche 57 étant arrondis; et une couche métallique 58 recouvrant la couche 57, et s'étendant sur les bords arrondis à travers les ouvertures 54 pour contacter électriquement toutes les régions de semi-conducteurs se trouvant en-dessous de toute portion des ouvertures de contact qui traversent les couches 55 et 57. L'invention s'applique notamment à l'industrie de semi-conducteurs.
FR7915578A 1978-06-19 1979-06-18 Compose de passivation pour un dispositif semi-conducteur, comprenant une couche de nitrure de silicium (si3n4) et une couche de verre au phosphosilicate (psg), et methode de fabrication Granted FR2429493A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/917,106 US4273805A (en) 1978-06-19 1978-06-19 Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer

Publications (2)

Publication Number Publication Date
FR2429493A1 true FR2429493A1 (fr) 1980-01-18
FR2429493B1 FR2429493B1 (fr) 1984-07-06

Family

ID=25438348

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7915578A Granted FR2429493A1 (fr) 1978-06-19 1979-06-18 Compose de passivation pour un dispositif semi-conducteur, comprenant une couche de nitrure de silicium (si3n4) et une couche de verre au phosphosilicate (psg), et methode de fabrication

Country Status (12)

Country Link
US (1) US4273805A (fr)
JP (1) JPS553700A (fr)
BR (1) BR7903787A (fr)
CA (1) CA1125439A (fr)
DE (1) DE2923737A1 (fr)
FR (1) FR2429493A1 (fr)
GB (1) GB2023342B (fr)
IN (1) IN149514B (fr)
IT (1) IT1121252B (fr)
PL (1) PL123900B1 (fr)
SE (1) SE443260B (fr)
YU (1) YU42187B (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
USRE32351E (en) * 1978-06-19 1987-02-17 Rca Corporation Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
IT1140645B (it) * 1979-03-05 1986-10-01 Rca Corp Materiale composito di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio (si alla terza in alla quarta) ed uno strato di vetro al fosfosilicato (psg) e metodo di fabbricazione delle stesso
JPS5618469A (en) * 1979-07-24 1981-02-21 Fujitsu Ltd Semiconductor device
JPS56108247A (en) * 1980-01-31 1981-08-27 Sanyo Electric Co Ltd Semiconductor device
JPS56115560A (en) * 1980-02-18 1981-09-10 Toshiba Corp Manufacture of semiconductor device
JPS56116670A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS57113235A (en) * 1980-12-29 1982-07-14 Nec Corp Semiconductor device
JPS57126147A (en) * 1981-01-28 1982-08-05 Fujitsu Ltd Manufacture of semiconductor device
DE3270353D1 (en) * 1981-03-16 1986-05-15 Fairchild Camera Instr Co Method of inducing flow or densification of phosphosilicate glass for integrated circuits
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
US4363830A (en) * 1981-06-22 1982-12-14 Rca Corporation Method of forming tapered contact holes for integrated circuit devices
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
DE3132809A1 (de) * 1981-08-19 1983-03-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren, insbesondere von komplementaeren mos-feldeffekttransistorenschaltungen mit einer aus metallsiliziden bestehenden zusaetzlichen leiterbahnebene
US4395304A (en) * 1982-05-11 1983-07-26 Rca Corporation Selective etching of phosphosilicate glass
US4420503A (en) * 1982-05-17 1983-12-13 Rca Corporation Low temperature elevated pressure glass flow/re-flow process
JPS58219748A (ja) * 1982-06-15 1983-12-21 Toshiba Corp 半導体装置
US4476621A (en) * 1983-02-01 1984-10-16 Gte Communications Products Corporation Process for making transistors with doped oxide densification
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
US4575921A (en) * 1983-11-04 1986-03-18 General Motors Corporation Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
US4528211A (en) * 1983-11-04 1985-07-09 General Motors Corporation Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
US4606114A (en) * 1984-08-29 1986-08-19 Texas Instruments Incorporated Multilevel oxide as diffusion source
US4613556A (en) * 1984-10-18 1986-09-23 Xerox Corporation Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
JPS6218040A (ja) * 1985-07-17 1987-01-27 Matsushita Electronics Corp リンケイ酸ガラス被膜の平坦化方法
US4996576A (en) * 1986-11-24 1991-02-26 At&T Bell Laboratories Radiation-sensitive device
US5142346A (en) * 1987-04-03 1992-08-25 Texas Instruments Incorporated Floating gate JFET image sensor
JPH01123417A (ja) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp 半導体装置の製造方法
US4966870A (en) * 1988-04-14 1990-10-30 International Business Machines Corporation Method for making borderless contacts
JPH01283838A (ja) * 1988-05-10 1989-11-15 Toshiba Corp 半導体装置
US5168340A (en) * 1988-08-17 1992-12-01 Texas Instruments Incorporated Semiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diode
JPH0289346A (ja) * 1988-09-27 1990-03-29 Toshiba Corp 半導体装置及びその製造方法
JPH04239723A (ja) * 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2203171A1 (fr) * 1972-10-12 1974-05-10 Ncr Co
US3961414A (en) * 1972-06-09 1976-06-08 International Business Machines Corporation Semiconductor structure having metallization inlaid in insulating layers and method for making same
DE2747474A1 (de) * 1976-11-01 1978-05-03 Rca Corp Halbleiterbauelement
GB2011711A (en) * 1977-12-29 1979-07-11 Fujitsu Ltd Process for producing a semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089992A (en) * 1965-10-11 1978-05-16 International Business Machines Corporation Method for depositing continuous pinhole free silicon nitride films and products produced thereby
US3925572A (en) * 1972-10-12 1975-12-09 Ncr Co Multilevel conductor structure and method
JPS51138166A (en) * 1975-05-24 1976-11-29 Fujitsu Ltd Production method of semiconductor device
US4142004A (en) * 1976-01-22 1979-02-27 Bell Telephone Laboratories, Incorporated Method of coating semiconductor substrates
US4091407A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
US4097889A (en) * 1976-11-01 1978-06-27 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961414A (en) * 1972-06-09 1976-06-08 International Business Machines Corporation Semiconductor structure having metallization inlaid in insulating layers and method for making same
FR2203171A1 (fr) * 1972-10-12 1974-05-10 Ncr Co
DE2747474A1 (de) * 1976-11-01 1978-05-03 Rca Corp Halbleiterbauelement
GB2011711A (en) * 1977-12-29 1979-07-11 Fujitsu Ltd Process for producing a semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *

Also Published As

Publication number Publication date
IN149514B (fr) 1982-01-02
IT7923271A0 (it) 1979-06-04
GB2023342A (en) 1979-12-28
DE2923737A1 (de) 1979-12-20
FR2429493B1 (fr) 1984-07-06
JPS553700A (en) 1980-01-11
BR7903787A (pt) 1980-02-05
CA1125439A (fr) 1982-06-08
US4273805A (en) 1981-06-16
SE443260B (sv) 1986-02-17
IT1121252B (it) 1986-04-02
GB2023342B (en) 1982-12-22
SE7905253L (sv) 1979-12-20
YU144579A (en) 1983-02-28
PL216429A1 (fr) 1980-05-05
YU42187B (en) 1988-06-30
PL123900B1 (en) 1982-12-31

Similar Documents

Publication Publication Date Title
FR2429493A1 (fr) Compose de passivation pour un dispositif semi-conducteur, comprenant une couche de nitrure de silicium (si3n4) et une couche de verre au phosphosilicate (psg), et methode de fabrication
US4188258A (en) Process for fabricating strain gage transducer
JPS6437840A (en) Manufacture of semiconductor device with planar structure
FR2434485A1 (fr) Configuration de contact enfoui pour circuits integres cmos/sos
KR960037894A (ko) 밀봉된 공동 장치 및 형성 방법
CA2167398A1 (fr) Microcapteurs resonants isoles par un dielectrique
US4287772A (en) Strain gage transducer and process for fabricating same
KR960019629A (ko) 반도체 장치
FR2440080A1 (fr) Dispositifs semi-conducteurs et procede de fabrication d'un semi-conducteur comportant des regions en silicium poreux realisees par anodination
FR2542500B1 (fr) Procede de fabrication d'un dispositif semiconducteur du type comprenant au moins une couche de silicium deposee sur un substrat isolant
KR910003829A (ko) 고전압 반도체 장치 및 제조 과정
KR900017129A (ko) 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법
FR2451103A1 (fr) Procede de passivation d'un circuit integre, au moyen d'une couche de nitrure de silicium (si3n4) et d'une couche de verre au phosphosilicate (psg)
KR910003783A (ko) 반도체장치 및 그 제조방법
FR2371778A1 (fr) Dispositif semi-conducteur
FR2382094A1 (fr) Passivation d'une interception de surface d'une jonction pn
JPS54136176A (en) Manufacture of beam lead type semiconductor device
JPS5739548A (en) Semiconductor device
JPS6465867A (en) Semiconductor integrated circuit device
JPS5779667A (en) Manufacture of semiconductor device
JPS5763837A (en) Semiconductor device
US3514848A (en) Method of making a semiconductor device with protective glass sealing
JPS5740967A (en) Integrated circuit device
JPS5526683A (en) Semiconductor integrated circuit device
JPS5660037A (en) Semiconductor device