IT1140645B - Materiale composito di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio (si alla terza in alla quarta) ed uno strato di vetro al fosfosilicato (psg) e metodo di fabbricazione delle stesso - Google Patents

Materiale composito di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio (si alla terza in alla quarta) ed uno strato di vetro al fosfosilicato (psg) e metodo di fabbricazione delle stesso

Info

Publication number
IT1140645B
IT1140645B IT20023/80A IT2002380A IT1140645B IT 1140645 B IT1140645 B IT 1140645B IT 20023/80 A IT20023/80 A IT 20023/80A IT 2002380 A IT2002380 A IT 2002380A IT 1140645 B IT1140645 B IT 1140645B
Authority
IT
Italy
Prior art keywords
layer
phosphosilicate
psg
yes
glass
Prior art date
Application number
IT20023/80A
Other languages
English (en)
Other versions
IT8020023A1 (it
IT8020023A0 (it
Inventor
Martin Albert Blumenfeld
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8020023A0 publication Critical patent/IT8020023A0/it
Publication of IT8020023A1 publication Critical patent/IT8020023A1/it
Application granted granted Critical
Publication of IT1140645B publication Critical patent/IT1140645B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
IT20023/80A 1979-03-05 1980-02-19 Materiale composito di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio (si alla terza in alla quarta) ed uno strato di vetro al fosfosilicato (psg) e metodo di fabbricazione delle stesso IT1140645B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1710079A 1979-03-05 1979-03-05

Publications (3)

Publication Number Publication Date
IT8020023A0 IT8020023A0 (it) 1980-02-19
IT8020023A1 IT8020023A1 (it) 1981-08-19
IT1140645B true IT1140645B (it) 1986-10-01

Family

ID=21780714

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20023/80A IT1140645B (it) 1979-03-05 1980-02-19 Materiale composito di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio (si alla terza in alla quarta) ed uno strato di vetro al fosfosilicato (psg) e metodo di fabbricazione delle stesso

Country Status (7)

Country Link
JP (1) JPS55121669A (it)
DE (1) DE3007500A1 (it)
FR (1) FR2451103A1 (it)
GB (1) GB2044533B (it)
IT (1) IT1140645B (it)
NL (1) NL8001310A (it)
YU (1) YU61180A (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
JPS581878A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 磁気バブルメモリ素子の製造方法
DE3130666A1 (de) * 1981-08-03 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen integrieter mos-feldeffekttransistoren mit einer phosphorsilikatglasschicht als zwischenoxidschicht
DE3131050A1 (de) * 1981-08-05 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene
DE3133516A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum verrunden des zwischenoxids zwischen polysiliziumebene und metall-leiterbahnebene beim herstellen von integrierten n-kanal-mos-feldeffekttransistoren
JPS5898934A (ja) * 1981-12-08 1983-06-13 Matsushita Electronics Corp 半導体装置の製造方法
US4686000A (en) * 1985-04-02 1987-08-11 Heath Barbara A Self-aligned contact process
JPH088246A (ja) * 1994-06-21 1996-01-12 Nippon Motorola Ltd 半導体装置の金属配線形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3627598A (en) * 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
US3917495A (en) * 1970-06-01 1975-11-04 Gen Electric Method of making improved planar devices including oxide-nitride composite layer
US3943621A (en) * 1974-03-25 1976-03-16 General Electric Company Semiconductor device and method of manufacture therefor
US4005240A (en) * 1975-03-10 1977-01-25 Aeronutronic Ford Corporation Germanium device passivation
US4273805A (en) * 1978-06-19 1981-06-16 Rca Corporation Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer

Also Published As

Publication number Publication date
GB2044533B (en) 1983-12-14
IT8020023A1 (it) 1981-08-19
JPS55121669A (en) 1980-09-18
IT8020023A0 (it) 1980-02-19
GB2044533A (en) 1980-10-15
DE3007500A1 (de) 1980-09-18
NL8001310A (nl) 1980-09-09
FR2451103A1 (fr) 1980-10-03
YU61180A (en) 1983-02-28

Similar Documents

Publication Publication Date Title
IT1121252B (it) Struttura composita di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio(s13 n4)e uno strato di vetro al fosfosilicato(psg)e metodo di fabbricazione di tale dispositivo
IT1140645B (it) Materiale composito di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio (si alla terza in alla quarta) ed uno strato di vetro al fosfosilicato (psg) e metodo di fabbricazione delle stesso
GB9217640D0 (en) Method of forming boron doped silicon layer and semiconductor manufacturing method
BE873482A (fr) Compositions pour le polissage du silicium et du germanium
DK3592D0 (da) Borholdigt siliciumoxid-baseret syntetisk materiale med poroes zeolit-lignende struktur og fremgangsmaade til dets fremstilling
JPS5661168A (en) Silicon on sapphire semiconductor structure and method of manufacturing same
EP0032211A3 (en) Method to make a silicon layer being partly polycrystalline and partly monocrystalline
EP0420555A3 (en) Method of bubble-free bonding of silicon wafers
IT1135575B (it) Sinterizzato composito di nitruro di silicio/nitruro di boro e metodo per la sua preparazione
JPS57162375A (en) Amorphous silicon pin semiconductor device and method of producing same
IT8406633A0 (it) Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli
DE2964588D1 (en) Method of manufacturing semiconductor devices with insulated areas of polycrystalline silicon and semiconductor devices thus produced
JPS55107228A (en) Method of and device for fabricating amorphous silicon semiconductor
DK270981A (da) Fremgangsmaade til fremstilling af et mellemprodukt til brug ved frmstilling af silicium og/eller siliciumcarbid
DE3572423D1 (en) Semiconductor device having a polycrystalline silicon interconnection layer and method for its manufacture
FR2599833B1 (fr) Capteur de grandeurs mecaniques integre sur silicium et procede de fabrication
FR2337702A1 (fr) Procede de fabrication de corps en nitrure de silicium et corps obtenus
IT1118308B (it) Procedimento e dispositivo per il posizionamento e mantenimento in condizione spianata di un wafer semiconduttore nel corso di fabbricazione
FR2573444B1 (fr) Procede de fabrication de fibres monocristallines en carbure de silicium
EP0158698A3 (en) Method of manufacturing b type silicon nitride whiskers
JPS5731182A (en) Method of producing layer containing silicon and photoelectric converting device thereby
IT1129028B (it) Perfezionamento nelle lappatrici adatte in particolare per la lavorazione di lastrine di semiconduttori e simili
JPS56140630A (en) Method of adhering passivation layer to gold region of semiconductor device
BR8104309A (pt) Processo para fabricar um dispositivo semicondutor apassivado a vidro e dispositivo semicondutor
IT1150561B (it) Procedimento e dispositivo per la collocazione ed il mantenimento di un nastro in una incassatura di occhiali per l ottenimento di una sa goma mediante colata