FR2219446A1 - - Google Patents

Info

Publication number
FR2219446A1
FR2219446A1 FR7405785A FR7405785A FR2219446A1 FR 2219446 A1 FR2219446 A1 FR 2219446A1 FR 7405785 A FR7405785 A FR 7405785A FR 7405785 A FR7405785 A FR 7405785A FR 2219446 A1 FR2219446 A1 FR 2219446A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7405785A
Other versions
FR2219446B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732308830 external-priority patent/DE2308830C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2219446A1 publication Critical patent/FR2219446A1/fr
Application granted granted Critical
Publication of FR2219446B1 publication Critical patent/FR2219446B1/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00Carboxylic acid nitriles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387Polyamides or polyimides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
FR7405785A 1973-02-22 1974-02-20 Expired FR2219446B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732308830 DE2308830C3 (de) 1973-02-22 Verfahren zur Herstellung von Reliefstrukturen

Publications (2)

Publication Number Publication Date
FR2219446A1 true FR2219446A1 (fr) 1974-09-20
FR2219446B1 FR2219446B1 (fr) 1977-09-23

Family

ID=5872768

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7405785A Expired FR2219446B1 (fr) 1973-02-22 1974-02-20

Country Status (9)

Country Link
US (1) US3957512A (fr)
JP (1) JPS5530207B2 (fr)
AT (1) AT330469B (fr)
BE (1) BE811380A (fr)
FR (1) FR2219446B1 (fr)
GB (1) GB1467226A (fr)
IT (1) IT1008872B (fr)
LU (1) LU69433A1 (fr)
NL (1) NL177718C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0304136A2 (fr) * 1987-08-19 1989-02-22 Asahi Kasei Kogyo Kabushiki Kaisha Compositions photosensibles

Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2326314C2 (de) * 1973-05-23 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Reliefstrukturen
DE2437348B2 (de) * 1974-08-02 1976-10-07 Ausscheidung in: 24 62 105 Verfahren zur herstellung von reliefstrukturen
AT341792B (de) * 1974-08-02 1978-02-27 Siemens Ag Verfahren zur herstellung von schichtstrukturen
USRE30186E (en) * 1974-08-02 1980-01-08 Siemens Aktiengesellschaft Method for the preparation of relief structures
AT352406B (de) * 1974-08-02 1979-09-25 Siemens Ag Verfahren zur herstellung von reliefstrukturen
DE2457882B2 (de) * 1974-12-06 1977-06-02 Siemens AG, 1000 Berlin und 8000 München Waermebestaendige, lichtvernetzbare massen
LU75749A1 (fr) * 1976-09-08 1978-04-27
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
JPS5545747A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Photosensitive polymer and its production
WO1980000706A1 (fr) * 1978-09-29 1980-04-17 Hitachi Ltd Composition polymere sensible a la lumiere
JPS5545748A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Photosensitive polymer and its production
DE2919841A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
DE2919840A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
JPS5622428A (en) * 1979-08-01 1981-03-03 Toray Ind Inc Polyimide pattern forming method
DE2933827A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
DE2933828A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Polyoxazol-vorstufen sowie deren herstellung.
DE2933856A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung eines zugfesten lichtwellenleiters
DE2933819A1 (de) * 1979-08-21 1981-03-19 Siemens AG, 1000 Berlin und 8000 München Polyimidazol- und polyimidazopyrrolon-vorstufen sowie deren herstellung
DE2933805A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung
DE2933871A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
DE2933826A1 (de) * 1979-08-21 1981-03-19 Siemens AG, 1000 Berlin und 8000 München Polyimid-, polyisoindolochinazolindion-, polyoxazindion- und polychinazolindion-vorstufen sowie deren herstellung
DE3021787A1 (de) * 1980-06-10 1981-12-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung
DE3021748A1 (de) * 1980-06-10 1981-12-17 Siemens AG, 1000 Berlin und 8000 München Strahlungsreaktive vorstufen hochwaermebestaendiger polymerer
US4410612A (en) * 1980-09-03 1983-10-18 E. I. Du Pont De Nemours And Company Electrical device formed from polymeric heat resistant photopolymerizable composition
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4414312A (en) * 1980-09-03 1983-11-08 E. I. Du Pont De Nemours & Co. Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger
US4369247A (en) * 1980-09-03 1983-01-18 E. I. Du Pont De Nemours And Company Process of producing relief structures using polyamide ester resins
DE3107633A1 (de) * 1981-02-27 1982-09-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung duenner polyimidschichten"
US4454220A (en) * 1982-01-04 1984-06-12 E. I. Du Pont De Nemours And Company Electrical device containing a radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound
US4430418A (en) 1982-09-30 1984-02-07 E. I. Du Pont De Nemours And Company Radiation-sensitive polyimide precursor composition derived from a diaryl fluoronated diamine compound
US4416973A (en) * 1982-01-04 1983-11-22 E. I. Du Pont De Nemours & Co. Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound
JPS58223149A (ja) * 1982-06-22 1983-12-24 Toray Ind Inc 感光性ポリイミド用現像液
DE3233912A1 (de) * 1982-09-13 1984-03-15 Merck Patent Gmbh, 6100 Darmstadt Fotolacke zur ausbildung von reliefstrukturen aus hochwaermebestaendigen polymeren
US4579809A (en) * 1982-10-22 1986-04-01 Ciba-Geigy Corporation Positive image formation
DE3246403A1 (de) * 1982-12-15 1984-06-20 Merck Patent Gmbh, 6100 Darmstadt Verfahren zur entwicklung von reliefstrukturen auf der basis von strahlungsvernetzten polymervorstufen hochwaermebestaendiger polymere
US4548891A (en) * 1983-02-11 1985-10-22 Ciba Geigy Corporation Photopolymerizable compositions containing prepolymers with olefin double bonds and titanium metallocene photoinitiators
EP0119719B1 (fr) * 1983-03-03 1987-05-06 Toray Industries, Inc. Composition de polymère sensible au rayonnement
US4656116A (en) * 1983-10-12 1987-04-07 Ciba-Geigy Corporation Radiation-sensitive coating composition
DE3411697A1 (de) * 1984-03-29 1985-10-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von polyimid- und polyisoindolochinazolindion-reliefstrukturen
DE3411660A1 (de) * 1984-03-29 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von polyimid- und polyisoindolochinazolindion-vorstufen
JPS6117077U (ja) * 1984-07-05 1986-01-31 節子 佐々木 自動車用タイヤ保管袋
US4551522A (en) * 1985-04-26 1985-11-05 E. I. Du Pont De Nemours And Company Process for making photopolymerizable aromatic polyamic acid derivatives
EP0254230A3 (fr) * 1986-07-22 1988-11-23 Asahi Kasei Kogyo Kabushiki Kaisha Film formant une photoréserve résistant à la chaleur
EP0259727A3 (fr) * 1986-09-11 1989-02-08 Siemens Aktiengesellschaft Procédé de fabrication de couches structurées résistantes à la chaleur à base d'époxydes
US5077378A (en) * 1986-10-02 1991-12-31 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group
EP0291779B1 (fr) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Réserves positives résistantes à la chaleur et procédé de fabrication de structures formant réserve résistantes à la chaleur
DE3717933A1 (de) * 1987-05-27 1988-12-08 Hoechst Ag Photopolymerisierbares gemisch, dieses enthaltendes aufzeichnungsmaterial und verfahren zur herstellung von hochwaermebestaendigen reliefstrukturen
US5270431A (en) * 1987-07-23 1993-12-14 Basf Aktiengesellschaft Preparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers
DE3833438A1 (de) * 1988-10-01 1990-04-05 Basf Ag Strahlungsempfindliche gemische und deren verwendung
DE3833437A1 (de) * 1988-10-01 1990-04-05 Basf Ag Strahlungsempfindliche gemische und deren verwendung
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
US5218009A (en) * 1989-08-04 1993-06-08 Ciba-Geigy Corporation Mono- and di-acylphosphine oxides
EP0458741B1 (fr) * 1990-05-10 1996-01-24 Ciba-Geigy Ag Compositions durcissables par rayonnement et stabilisées à la lumière
US5310862A (en) * 1991-08-20 1994-05-10 Toray Industries, Inc. Photosensitive polyimide precursor compositions and process for preparing same
DE4217688A1 (de) * 1992-05-29 1993-12-02 Basf Lacke & Farben Durch Einwirkung von Strahlung vernetzendes Gemisch und dessen Verwendung zur Herstellung hochtemperaturbeständiger Reliefstrukturen
DE69308671T2 (de) * 1992-07-22 1997-10-16 Asahi Chemical Ind Photoempfindliche Polyimid-Zusammensetzung
JP2787531B2 (ja) * 1993-02-17 1998-08-20 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
US5573886A (en) * 1994-01-21 1996-11-12 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition comprising a polyimide precursor and method for making a polyimide film pattern from the same
US5777068A (en) * 1994-09-13 1998-07-07 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition
JP3170174B2 (ja) 1995-04-18 2001-05-28 日本ゼオン株式会社 ポリイミド系樹脂組成物
US5886136A (en) * 1995-09-12 1999-03-23 Nippon Zeon Co., Ltd. Pattern forming process
US5648451A (en) * 1995-10-10 1997-07-15 Sumitomo Bakelite Company Limited Process for producing photosensitive resin
US6010825A (en) * 1997-09-11 2000-01-04 Olin Microelectronics Chemicals, Inc. Negatively acting photoresist composition based on polyimide precursors
US6160081A (en) * 1997-10-31 2000-12-12 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition
KR100414697B1 (ko) 1999-01-25 2004-01-13 리카가쿠 겐큐쇼 감광성 수지조성물 및 이를 사용한 반도체장치
KR100519650B1 (ko) * 1999-02-05 2005-10-07 제일모직주식회사 점도가 균일한 폴리아믹산의 제조방법
JP4529252B2 (ja) 1999-09-28 2010-08-25 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
KR100422971B1 (ko) 1999-12-29 2004-03-12 삼성전자주식회사 나프톨 구조를 가진 이온형 광산발생제 및 이를 이용한감광성 폴리이미드 조성물
EP1138804A3 (fr) 2000-03-27 2003-06-25 Infineon Technologies AG Composant avec au moins deux couches protectrices contigues et son procédé de fabrication
JP3773845B2 (ja) 2000-12-29 2006-05-10 三星電子株式会社 ポジティブ型感光性ポリイミド前駆体およびこれを含む組成物
WO2003038526A1 (fr) * 2001-10-30 2003-05-08 Kaneka Corporation Composition de resine photosensible et films et stratifies photosensibles ainsi obtenus
KR100532590B1 (ko) * 2002-11-07 2005-12-01 삼성전자주식회사 감광성 폴리이미드 전구체용 가용성 폴리이미드 및, 이를포함하는 감광성 폴리이드 전구체 조성물
US7799317B2 (en) * 2002-11-22 2010-09-21 Hallstar Innovations Corp. Photostabilizers, UV absorbers, and methods of photostabilizing compositions
KR20060002751A (ko) * 2003-03-11 2006-01-09 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 새로운 감광성 수지 조성물들
US20060199920A1 (en) * 2003-04-15 2006-09-07 Koji Okada Photosensitive resin composition capable of being developed with aqueous developer and photosensitive dry film resist, and use thereof
CN102854745B (zh) * 2004-01-14 2015-05-27 日立化成杜邦微系统股份有限公司 感光性树脂组合物、图案制造方法及电子部件
JP3995253B2 (ja) * 2004-09-28 2007-10-24 Tdk株式会社 感光性ポリイミドパターンの形成方法及び該パターンを有する電子素子
JP4771412B2 (ja) * 2005-02-14 2011-09-14 信越化学工業株式会社 感光性樹脂及びその製造方法
KR100981830B1 (ko) * 2005-09-22 2010-09-13 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 네거티브형 감광성 수지 조성물, 패턴 형성방법 및전자부품
KR20080104308A (ko) * 2006-03-16 2008-12-02 아사히 가라스 가부시키가이샤 네거티브형 감광성 함불소 방향족계 수지 조성물
CN101432659B (zh) * 2006-04-28 2013-06-12 旭化成电子材料株式会社 感光性树脂组合物及感光性薄膜
US20100159217A1 (en) * 2006-06-20 2010-06-24 Hitachi Chemical Dupont Microsystems, Ltd Negative-type photosensitive resin composition, method for forming patterns, and electronic parts
JP4386454B2 (ja) * 2006-08-22 2009-12-16 信越化学工業株式会社 アルカリ水溶液に可溶な感光性ポリイミド樹脂、該樹脂を含む組成物、及び該組成物から得られる膜
JP4336999B2 (ja) * 2007-01-31 2009-09-30 信越化学工業株式会社 シルフェニレン骨格含有高分子化合物及び光硬化性樹脂組成物並びにパターン形成方法及び基板回路保護用皮膜
KR100833706B1 (ko) * 2007-02-01 2008-05-29 삼성전자주식회사 감광성 폴리이미드 조성물, 폴리이미드 필름 및 이를 이용한 반도체 소자
EP2133743B1 (fr) * 2007-03-12 2018-01-24 Hitachi Chemical DuPont Microsystems, Ltd. Composition de resine photosensible, procede de fabrication d'un film durci a motifs a l'aide de celle-ci et composant electronique
JP5316417B2 (ja) * 2007-10-29 2013-10-16 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
PT2221666E (pt) 2007-11-12 2013-10-31 Hitachi Chemical Co Ltd Composição de resina fotossensível de tipo positivo, método para a produção de um padrão de revestimento fotossensível e dispositivo semicondutor
JP4911116B2 (ja) * 2008-05-22 2012-04-04 日立化成デュポンマイクロシステムズ株式会社 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品
CN102132212B (zh) 2008-09-04 2013-08-28 日立化成株式会社 正型感光性树脂组合物、抗蚀图形的制造方法以及电子部件
KR101398754B1 (ko) 2008-12-26 2014-05-27 히타치가세이가부시끼가이샤 포지티브형 감광성 수지 조성물, 레지스트 패턴의 제조 방법, 반도체 장치 및 전자 디바이스
JP5206977B2 (ja) * 2009-03-12 2013-06-12 信越化学工業株式会社 新規ポリイミドシリコーン及びこれを含有する感光性樹脂組成物並びにパターン形成方法
TWI516527B (zh) 2009-12-10 2016-01-11 信越化學工業股份有限公司 光固化性樹脂組成物,圖案形成法和基板保護膜,以及使用該組成物之膜狀黏著劑及黏著片
US9063421B2 (en) 2011-11-17 2015-06-23 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and pattern forming process
JP6065789B2 (ja) 2012-09-27 2017-01-25 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
ES2683976T3 (es) 2012-10-19 2018-10-01 Igm Group B.V. Fotoiniciadores híbridos
JP6487875B2 (ja) 2016-04-19 2019-03-20 信越化学工業株式会社 テトラカルボン酸ジエステル化合物、ポリイミド前駆体の重合体及びその製造方法、ネガ型感光性樹脂組成物、ポジ型感光性樹脂組成物、パターン形成方法、及び硬化被膜形成方法
JP6663320B2 (ja) 2016-07-25 2020-03-11 信越化学工業株式会社 テトラカルボン酸ジエステル化合物、ポリイミド前駆体の重合体及びその製造方法、ネガ型感光性樹脂組成物、パターン形成方法、及び硬化被膜形成方法
JP6637871B2 (ja) 2016-10-27 2020-01-29 信越化学工業株式会社 テトラカルボン酸ジエステル化合物、ポリイミド前駆体の重合体及びその製造方法、ネガ型感光性樹脂組成物、パターン形成方法、及び硬化被膜形成方法
JP6663380B2 (ja) 2017-03-22 2020-03-11 信越化学工業株式会社 ポリイミド前駆体の重合体、ポジ型感光性樹脂組成物、ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP6810677B2 (ja) 2017-12-05 2021-01-06 信越化学工業株式会社 新規テトラカルボン酸二無水物、ポリイミド樹脂及びその製造方法、感光性樹脂組成物、パターン形成方法及び硬化被膜形成方法、層間絶縁膜、表面保護膜、電子部品
JP7145126B2 (ja) 2018-08-01 2022-09-30 信越化学工業株式会社 ポリアミド、ポリアミドイミド、ポリイミド構造を含む重合体、感光性樹脂組成物、パターン形成方法、感光性ドライフィルム及び電気・電子部品保護用皮膜
JP7154184B2 (ja) 2019-04-15 2022-10-17 信越化学工業株式会社 ポジ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
US11572442B2 (en) 2020-04-14 2023-02-07 International Business Machines Corporation Compound, polyimide resin and method of producing the same, photosensitive resin composition, patterning method and method of forming cured film, interlayer insulating film, surface protective film, and electronic component
US11333975B2 (en) 2020-04-14 2022-05-17 International Business Machines Corporation Polymer, photosensitive resin composition, patterning method, method of forming cured film, interlayer insulating film, surface protective film, and electronic component
JP7431696B2 (ja) 2020-08-04 2024-02-15 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP2022029427A (ja) 2020-08-04 2022-02-17 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
KR102418193B1 (ko) 2020-08-28 2022-07-07 주식회사 파이솔루션테크놀로지 감광성 폴리이미드 및 이의 조성물
KR20220089659A (ko) 2020-12-21 2022-06-28 주식회사 파이솔루션테크놀로지 네가티브형 감광성 폴리아믹산 에스테르 공중합체의 제조방법
JP7503015B2 (ja) 2021-03-09 2024-06-19 信越化学工業株式会社 ポリイミドを含む重合体、ポジ型感光性樹脂組成物、ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP2023165095A (ja) 2022-05-02 2023-11-15 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、層間絶縁膜、表面保護膜、及び電子部品

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475176A (en) * 1966-09-06 1969-10-28 Eastman Kodak Co Azide sensitized photosensitive prepolymer compositions
US3650746A (en) * 1969-06-16 1972-03-21 Grace W R & Co Dual image formation on separate supports of photocurable composition
US3858510A (en) * 1971-03-11 1975-01-07 Asahi Chemical Ind Relief structures prepared from photosensitive compositions
US3801638A (en) * 1971-03-12 1974-04-02 Gaf Corp Triacrylyldiethylenetriamine,method of producing the same,and photopolymerization process and system utilizing the same
BE793732A (fr) * 1972-01-10 1973-05-02 Grace W R & Co Composition contenant un polyene et un polythiol
US3847767A (en) * 1973-03-13 1974-11-12 Grace W R & Co Method of producing a screen printable photocurable solder resist

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0304136A2 (fr) * 1987-08-19 1989-02-22 Asahi Kasei Kogyo Kabushiki Kaisha Compositions photosensibles
EP0304136A3 (en) * 1987-08-19 1990-01-17 Asahi Kasei Kogyo Kabushiki Kaisha Novel photosensitive composition

Also Published As

Publication number Publication date
DE2308830A1 (de) 1974-08-29
GB1467226A (en) 1977-03-16
NL177718C (nl) 1985-11-01
NL7400931A (fr) 1974-08-26
ATA131474A (de) 1975-09-15
JPS49115541A (fr) 1974-11-05
FR2219446B1 (fr) 1977-09-23
LU69433A1 (fr) 1974-05-29
BE811380A (fr) 1974-06-17
NL177718B (nl) 1985-06-03
IT1008872B (it) 1976-11-30
US3957512A (en) 1976-05-18
AT330469B (de) 1976-07-12
DE2308830B2 (de) 1975-06-26
JPS5530207B2 (fr) 1980-08-09

Similar Documents

Publication Publication Date Title
FR2219446B1 (fr)
AR201758A1 (fr)
AU465372B2 (fr)
AR201235Q (fr)
AR201231Q (fr)
AU465434B2 (fr)
AR201229Q (fr)
AR199451A1 (fr)
AR195948A1 (fr)
AR210729A1 (fr)
AR195311A1 (fr)
AR201432A1 (fr)
AR193950A1 (fr)
AR196382A1 (fr)
AR200885A1 (fr)
AR197627A1 (fr)
AR200256A1 (fr)
AU1891376A (fr)
AR196123Q (fr)
AR196212Q (fr)
CH562934A5 (fr)
CH562512A5 (fr)
BG19228A1 (fr)
BG19655A1 (fr)
AU481794A (fr)