FI20105443A - Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodatin - Google Patents
Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodatin Download PDFInfo
- Publication number
- FI20105443A FI20105443A FI20105443A FI20105443A FI20105443A FI 20105443 A FI20105443 A FI 20105443A FI 20105443 A FI20105443 A FI 20105443A FI 20105443 A FI20105443 A FI 20105443A FI 20105443 A FI20105443 A FI 20105443A
- Authority
- FI
- Finland
- Prior art keywords
- acoustically coupled
- wave
- passband
- wide
- resonances
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 230000005284 excitation Effects 0.000 abstract 1
- 230000008054 signal transmission Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0004—Impedance-matching networks
- H03H9/0014—Impedance-matching networks using bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0095—Balance-unbalance or balance-balance networks using bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/177—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/584—Coupled Resonator Filters [CFR]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105443A FI123640B (fi) | 2010-04-23 | 2010-04-23 | Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodin |
PCT/FI2011/050368 WO2011131844A1 (en) | 2010-04-23 | 2011-04-21 | Wide-band acoustically coupled thin-film baw filter |
EP11771646.4A EP2561613B1 (en) | 2010-04-23 | 2011-04-21 | Wide-band acoustically coupled thin-film baw filter |
CN201180020563.1A CN102870325B (zh) | 2010-04-23 | 2011-04-21 | 宽带声耦合薄膜baw滤波器 |
US13/642,155 US9294069B2 (en) | 2010-04-23 | 2011-04-21 | Wide-band acoustically coupled thin-film BAW filter |
JP2013505511A JP5709226B2 (ja) | 2010-04-23 | 2011-04-21 | 広帯域音響結合薄膜bawフィルタ |
KR1020127030465A KR101764787B1 (ko) | 2010-04-23 | 2011-04-21 | 광대역 음향 결합 박막 baw 필터 |
US14/810,481 US10320361B2 (en) | 2010-04-23 | 2015-07-28 | Wide-band acoustically coupled thin-film BAW filter |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20105443A FI123640B (fi) | 2010-04-23 | 2010-04-23 | Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodin |
FI20105443 | 2010-04-23 |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20105443A0 FI20105443A0 (fi) | 2010-04-23 |
FI20105443A true FI20105443A (fi) | 2013-06-17 |
FI123640B FI123640B (fi) | 2013-08-30 |
Family
ID=42133284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20105443A FI123640B (fi) | 2010-04-23 | 2010-04-23 | Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodin |
Country Status (7)
Country | Link |
---|---|
US (2) | US9294069B2 (fi) |
EP (1) | EP2561613B1 (fi) |
JP (1) | JP5709226B2 (fi) |
KR (1) | KR101764787B1 (fi) |
CN (1) | CN102870325B (fi) |
FI (1) | FI123640B (fi) |
WO (1) | WO2011131844A1 (fi) |
Families Citing this family (140)
Publication number | Priority date | Publication date | Assignee | Title |
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FI123640B (fi) * | 2010-04-23 | 2013-08-30 | Teknologian Tutkimuskeskus Vtt | Laajakaistainen akustisesti kytketty ohutkalvo-BAW-suodin |
FI124732B (fi) * | 2011-11-11 | 2014-12-31 | Teknologian Tutkimuskeskus Vtt | Lateraalisesti kytketty bulkkiaaltosuodatin, jolla on parannetut päästökaistan ominaisuudet |
US9093979B2 (en) | 2012-06-05 | 2015-07-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Laterally-coupled acoustic resonators |
DE102012111889B9 (de) | 2012-12-06 | 2014-09-04 | Epcos Ag | Elektroakustischer Wandler |
WO2016047255A1 (ja) * | 2014-09-26 | 2016-03-31 | 国立大学法人東北大学 | 弾性波装置 |
KR102062088B1 (ko) | 2015-09-09 | 2020-02-11 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치 |
US10193524B2 (en) * | 2015-10-21 | 2019-01-29 | Qorvo Us, Inc. | Resonator structure with enhanced reflection of shear and longitudinal modes of acoustic vibrations |
US11039814B2 (en) * | 2016-12-04 | 2021-06-22 | Exo Imaging, Inc. | Imaging devices having piezoelectric transducers |
US11936358B2 (en) | 2020-11-11 | 2024-03-19 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with low thermal impedance |
US20220116015A1 (en) | 2018-06-15 | 2022-04-14 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch |
US10911023B2 (en) | 2018-06-15 | 2021-02-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with etch-stop layer |
US11509279B2 (en) | 2020-07-18 | 2022-11-22 | Resonant Inc. | Acoustic resonators and filters with reduced temperature coefficient of frequency |
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US10790802B2 (en) | 2018-06-15 | 2020-09-29 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate |
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US10637438B2 (en) | 2018-06-15 | 2020-04-28 | Resonant Inc. | Transversely-excited film bulk acoustic resonators for high power applications |
US11323089B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer |
US10601392B2 (en) | 2018-06-15 | 2020-03-24 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator |
US11929731B2 (en) | 2018-02-18 | 2024-03-12 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch |
US20210328574A1 (en) | 2020-04-20 | 2021-10-21 | Resonant Inc. | Small transversely-excited film bulk acoustic resonators with enhanced q-factor |
US11323090B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications |
US11146232B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with reduced spurious modes |
US10491192B1 (en) | 2018-06-15 | 2019-11-26 | Resonant Inc. | Transversely-excited film bulk acoustic resonator |
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US11206009B2 (en) | 2019-08-28 | 2021-12-21 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch |
US11323091B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with diaphragm support pedestals |
US10992284B2 (en) | 2018-06-15 | 2021-04-27 | Resonant Inc. | Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers |
US11901878B2 (en) | 2018-06-15 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer |
US10868513B2 (en) | 2018-06-15 | 2020-12-15 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
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WO2021025004A1 (ja) * | 2019-08-08 | 2021-02-11 | 国立大学法人東北大学 | 弾性波デバイス |
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WO2021060507A1 (ja) * | 2019-09-27 | 2021-04-01 | 株式会社村田製作所 | 弾性波装置 |
WO2021060509A1 (ja) * | 2019-09-27 | 2021-04-01 | 株式会社村田製作所 | 弾性波装置 |
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WO2021060510A1 (ja) * | 2019-09-27 | 2021-04-01 | 株式会社村田製作所 | 弾性波装置 |
JP7103528B2 (ja) | 2019-09-27 | 2022-07-20 | 株式会社村田製作所 | 弾性波装置 |
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US9294069B2 (en) | 2016-03-22 |
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US20130057360A1 (en) | 2013-03-07 |
US10320361B2 (en) | 2019-06-11 |
FI20105443A0 (fi) | 2010-04-23 |
EP2561613B1 (en) | 2016-01-13 |
EP2561613A4 (en) | 2013-11-27 |
FI123640B (fi) | 2013-08-30 |
CN102870325B (zh) | 2015-09-09 |
WO2011131844A1 (en) | 2011-10-27 |
JP2013528996A (ja) | 2013-07-11 |
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