FI121750B - ALD-reaktori - Google Patents

ALD-reaktori Download PDF

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Publication number
FI121750B
FI121750B FI20055612A FI20055612A FI121750B FI 121750 B FI121750 B FI 121750B FI 20055612 A FI20055612 A FI 20055612A FI 20055612 A FI20055612 A FI 20055612A FI 121750 B FI121750 B FI 121750B
Authority
FI
Finland
Prior art keywords
reaction chamber
outlet
openings
chamber according
inlet
Prior art date
Application number
FI20055612A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI20055612A (fi
FI20055612A0 (fi
Inventor
Leif Keto
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20055612A priority Critical patent/FI121750B/fi
Publication of FI20055612A0 publication Critical patent/FI20055612A0/fi
Priority to EA200801014A priority patent/EA012961B1/ru
Priority to EP06808041A priority patent/EP1948843A4/de
Priority to US12/085,027 priority patent/US20090255470A1/en
Priority to PCT/FI2006/050500 priority patent/WO2007057519A1/en
Priority to JP2008540643A priority patent/JP2009516077A/ja
Priority to CN2006800429237A priority patent/CN101310043B/zh
Publication of FI20055612A publication Critical patent/FI20055612A/fi
Application granted granted Critical
Publication of FI121750B publication Critical patent/FI121750B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
FI20055612A 2005-11-17 2005-11-17 ALD-reaktori FI121750B (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20055612A FI121750B (fi) 2005-11-17 2005-11-17 ALD-reaktori
EA200801014A EA012961B1 (ru) 2005-11-17 2006-11-16 Реактор для послойного атомного осаждения
EP06808041A EP1948843A4 (de) 2005-11-17 2006-11-16 Ald-reaktor
US12/085,027 US20090255470A1 (en) 2005-11-17 2006-11-16 Ald reactor
PCT/FI2006/050500 WO2007057519A1 (en) 2005-11-17 2006-11-16 Ald reactor
JP2008540643A JP2009516077A (ja) 2005-11-17 2006-11-16 Ａｌｄ反応容器
CN2006800429237A CN101310043B (zh) 2005-11-17 2006-11-16 原子层沉积反应器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20055612A FI121750B (fi) 2005-11-17 2005-11-17 ALD-reaktori
FI20055612 2005-11-17

Publications (3)

Publication Number Publication Date
FI20055612A0 FI20055612A0 (fi) 2005-11-17
FI20055612A FI20055612A (fi) 2007-05-18
FI121750B true FI121750B (fi) 2011-03-31

Family

ID=35458852

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20055612A FI121750B (fi) 2005-11-17 2005-11-17 ALD-reaktori

Country Status (7)

Country Link
US (1) US20090255470A1 (de)
EP (1) EP1948843A4 (de)
JP (1) JP2009516077A (de)
CN (1) CN101310043B (de)
EA (1) EA012961B1 (de)
FI (1) FI121750B (de)
WO (1) WO2007057519A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI123322B (fi) * 2007-12-17 2013-02-28 Beneq Oy Menetelmä ja laitteisto plasman muodostamiseksi
FI122941B (fi) * 2008-06-12 2012-09-14 Beneq Oy Sovitelma ALD-reaktorin yhteydessä
FI122940B (fi) * 2009-02-09 2012-09-14 Beneq Oy Reaktiokammio
FR2989691B1 (fr) * 2012-04-24 2014-05-23 Commissariat Energie Atomique Reacteur pour le depot de couche atomique (ald), application a l'encapsulage d'un dispositif oled par depot de couche transparente en al2o3.
RU2015155194A (ru) 2013-06-27 2017-08-01 Пикосан Ой Способ нанесения идентификационной отметки, подтверждающей подлинность изделия
EP2937890B1 (de) 2014-04-22 2020-06-03 Europlasma nv Plasma-beschichtungsvorrichtung mit einem plasma-verteiler und verfahren zur vermeidung der entfärbung eines substrates
CN111517928A (zh) * 2020-04-30 2020-08-11 武汉有机实业有限公司 二苄醚氧化工艺

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US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
JP3024449B2 (ja) * 1993-07-24 2000-03-21 ヤマハ株式会社 縦型熱処理炉及び熱処理方法
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
US6030902A (en) * 1996-02-16 2000-02-29 Micron Technology Inc Apparatus and method for improving uniformity in batch processing of semiconductor wafers
JP3231996B2 (ja) * 1996-04-26 2001-11-26 シャープ株式会社 気相成長装置
KR100252049B1 (ko) * 1997-11-18 2000-04-15 윤종용 원자층 증착법에 의한 알루미늄층의 제조방법
KR100347379B1 (ko) * 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
FI118342B (fi) * 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
KR100360401B1 (ko) * 2000-03-17 2002-11-13 삼성전자 주식회사 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6902624B2 (en) * 2001-10-29 2005-06-07 Genus, Inc. Massively parallel atomic layer deposition/chemical vapor deposition system
KR100453014B1 (ko) * 2001-12-26 2004-10-14 주성엔지니어링(주) Ｃｖｄ 장치
KR20030081144A (ko) * 2002-04-11 2003-10-17 가부시키가이샤 히다치 고쿠사이 덴키 종형 반도체 제조 장치
JP2004014953A (ja) * 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
JP4354908B2 (ja) * 2002-06-10 2009-10-28 東京エレクトロン株式会社 処理装置
KR20040007963A (ko) * 2002-07-15 2004-01-28 삼성전자주식회사 단원자층 증착 반응장치
JP2004095770A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
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FI119478B (fi) * 2005-04-22 2008-11-28 Beneq Oy Reaktori

Also Published As

Publication number Publication date
EP1948843A1 (de) 2008-07-30
FI20055612A (fi) 2007-05-18
FI20055612A0 (fi) 2005-11-17
EA200801014A1 (ru) 2008-12-30
US20090255470A1 (en) 2009-10-15
EP1948843A4 (de) 2010-04-14
CN101310043A (zh) 2008-11-19
JP2009516077A (ja) 2009-04-16
CN101310043B (zh) 2010-12-22
EA012961B1 (ru) 2010-02-26
WO2007057519A1 (en) 2007-05-24

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