FI107975B - Laite vinovääristymäajoitusvirheiden mittaamiseksi - Google Patents

Laite vinovääristymäajoitusvirheiden mittaamiseksi Download PDF

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Publication number
FI107975B
FI107975B FI932954A FI932954A FI107975B FI 107975 B FI107975 B FI 107975B FI 932954 A FI932954 A FI 932954A FI 932954 A FI932954 A FI 932954A FI 107975 B FI107975 B FI 107975B
Authority
FI
Finland
Prior art keywords
signal
value
state change
clock signal
skew
Prior art date
Application number
FI932954A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI932954A (fi
FI932954A0 (fi
Inventor
David Lowell Mcneely
Greg Alan Kranawetter
Original Assignee
Thomson Consumer Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Consumer Electronics filed Critical Thomson Consumer Electronics
Publication of FI932954A0 publication Critical patent/FI932954A0/fi
Publication of FI932954A publication Critical patent/FI932954A/fi
Application granted granted Critical
Publication of FI107975B publication Critical patent/FI107975B/fi

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/76Television signal recording
    • H04N5/91Television signal processing therefor
    • H04N5/93Regeneration of the television signal or of selected parts thereof
    • H04N5/95Time-base error compensation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66575Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Measurement Of Unknown Time Intervals (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Pulse Circuits (AREA)
  • Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
  • Measuring Phase Differences (AREA)
  • Manipulation Of Pulses (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
FI932954A 1992-06-26 1993-06-24 Laite vinovääristymäajoitusvirheiden mittaamiseksi FI107975B (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/904,632 US5309111A (en) 1992-06-26 1992-06-26 Apparatus for measuring skew timing errors
US90463292 1992-06-26

Publications (3)

Publication Number Publication Date
FI932954A0 FI932954A0 (fi) 1993-06-24
FI932954A FI932954A (fi) 1993-12-27
FI107975B true FI107975B (fi) 2001-10-31

Family

ID=25419475

Family Applications (1)

Application Number Title Priority Date Filing Date
FI932954A FI107975B (fi) 1992-06-26 1993-06-24 Laite vinovääristymäajoitusvirheiden mittaamiseksi

Country Status (9)

Country Link
US (1) US5309111A (ko)
EP (1) EP0575933B1 (ko)
JP (1) JPH0698354A (ko)
KR (1) KR100272626B1 (ko)
CN (1) CN1045146C (ko)
DE (1) DE69310030T2 (ko)
ES (1) ES2100395T3 (ko)
FI (1) FI107975B (ko)
SG (1) SG92592A1 (ko)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404437A (en) * 1992-11-10 1995-04-04 Sigma Designs, Inc. Mixing of computer graphics and animation sequences
FR2711286B1 (fr) * 1993-10-11 1996-01-05 Sgs Thomson Microelectronics Dispositif de surveillance du déphasage entre deux signaux d'horloge.
US5598576A (en) * 1994-03-30 1997-01-28 Sigma Designs, Incorporated Audio output device having digital signal processor for responding to commands issued by processor by emulating designated functions according to common command interface
US5515107A (en) * 1994-03-30 1996-05-07 Sigma Designs, Incorporated Method of encoding a stream of motion picture data
US6124897A (en) 1996-09-30 2000-09-26 Sigma Designs, Inc. Method and apparatus for automatic calibration of analog video chromakey mixer
US5528309A (en) 1994-06-28 1996-06-18 Sigma Designs, Incorporated Analog video chromakey mixer
US5663767A (en) * 1995-10-25 1997-09-02 Thomson Consumer Electronics, Inc. Clock re-timing apparatus with cascaded delay stages
US5719511A (en) 1996-01-31 1998-02-17 Sigma Designs, Inc. Circuit for generating an output signal synchronized to an input signal
US5818468A (en) * 1996-06-04 1998-10-06 Sigma Designs, Inc. Decoding video signals at high speed using a memory buffer
US6128726A (en) 1996-06-04 2000-10-03 Sigma Designs, Inc. Accurate high speed digital signal processor
US5963267A (en) * 1996-09-20 1999-10-05 Thomson Consumer Electronics, Inc. Delay correction circuit
US5982408A (en) * 1997-04-10 1999-11-09 Lexmark International, Inc. Method and apparatus for HSYNC synchronization
US6687770B1 (en) 1999-03-08 2004-02-03 Sigma Designs, Inc. Controlling consumption of time-stamped information by a buffered system
US6654956B1 (en) 2000-04-10 2003-11-25 Sigma Designs, Inc. Method, apparatus and computer program product for synchronizing presentation of digital video data with serving of digital video data
US20070103141A1 (en) * 2003-11-13 2007-05-10 International Business Machines Corporation Duty cycle measurment circuit for measuring and maintaining balanced clock duty cycle
US7961559B2 (en) * 2003-11-13 2011-06-14 International Business Machines Corporation Duty cycle measurement circuit for measuring and maintaining balanced clock duty cycle
US7400555B2 (en) * 2003-11-13 2008-07-15 International Business Machines Corporation Built in self test circuit for measuring total timing uncertainty in a digital data path
KR100582391B1 (ko) * 2004-04-08 2006-05-22 주식회사 하이닉스반도체 반도체 소자에서의 지연 요소의 지연 검출 장치 및 방법
US7587640B2 (en) * 2005-09-27 2009-09-08 Agere Systems Inc. Method and apparatus for monitoring and compensating for skew on a high speed parallel bus
JP4973498B2 (ja) * 2005-09-28 2012-07-11 日本電気株式会社 位相差測定装置及び位相比較回路の調整方法
EP1950577A3 (fr) * 2007-01-29 2012-01-11 Stmicroelectronics Sa Procede de verification de l'integrite d'un arbre d'horloge
JPWO2008126240A1 (ja) * 2007-03-30 2010-07-22 三菱電機株式会社 同期フェーザ測定装置及びこれを用いた母線間位相角差測定装置
JP2009130442A (ja) * 2007-11-20 2009-06-11 Fujitsu Component Ltd 信号伝送システム及びその制御方法
US20150104673A1 (en) * 2013-10-10 2015-04-16 Datang Nxp Semiconductors Co., Ltd. Daisy-chain communication bus and protocol
US20160080138A1 (en) * 2014-09-17 2016-03-17 Telefonaktiebolaget L M Ericsson (Publ) Method and apparatus for timing synchronization in a distributed timing system
US11256286B1 (en) 2020-12-28 2022-02-22 Samsung Electronics Co., Ltd. Electronic circuit and method for clock skew-calibration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681693A (en) * 1970-11-27 1972-08-01 Rca Corp Measurement of maximum dynamic skew in parallel channels
US4595953A (en) * 1984-10-31 1986-06-17 Rca Corporation Television receiver having character generator with burst locked pixel clock and correction for non-standard video signals
DE3579925D1 (de) * 1985-12-12 1990-10-31 Itt Ind Gmbh Deutsche Digitale phasenmesschaltung.
US4772937A (en) * 1987-03-31 1988-09-20 Rca Licensing Corporation Skew signal generating apparatus for digital TV
US4814879A (en) * 1987-08-07 1989-03-21 Rca Licensing Corporation Signal phase alignment circuitry
US4926115A (en) * 1988-12-19 1990-05-15 Ag Communication Systems Corporation Unique phase difference measuring circuit
US5138320A (en) * 1990-11-14 1992-08-11 Zenith Electronics Corporation Skew code generator for measuring pulses width using a delay line

Also Published As

Publication number Publication date
US5309111A (en) 1994-05-03
DE69310030T2 (de) 1997-08-14
FI932954A (fi) 1993-12-27
CN1082296A (zh) 1994-02-16
EP0575933A1 (en) 1993-12-29
CN1045146C (zh) 1999-09-15
SG92592A1 (en) 2002-11-19
FI932954A0 (fi) 1993-06-24
KR940001693A (ko) 1994-01-11
DE69310030D1 (de) 1997-05-28
ES2100395T3 (es) 1997-06-16
JPH0698354A (ja) 1994-04-08
EP0575933B1 (en) 1997-04-23
KR100272626B1 (ko) 2000-11-15

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