ES8501169A1 - Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicas - Google Patents
Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicasInfo
- Publication number
- ES8501169A1 ES8501169A1 ES530223A ES530223A ES8501169A1 ES 8501169 A1 ES8501169 A1 ES 8501169A1 ES 530223 A ES530223 A ES 530223A ES 530223 A ES530223 A ES 530223A ES 8501169 A1 ES8501169 A1 ES 8501169A1
- Authority
- ES
- Spain
- Prior art keywords
- semi
- layer
- conducting devices
- silk
- front side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- 238000012216 screening Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PROCEDIMIENTO PARA LA FABRICACION DE UN ELEMENTO SEMI-CONDUCTOR, EN PARTICULAR CELULAS SOLARES FOTOVOLTAICAS, QUE COMPRENDE UNA SUPERFICIE ANTERIOR FOTOSENSIBLE Y UNA SUPERFICIE POSTERIOR DISPUESTA PARA REALIZAR UN CONTACTO OHMICO.COMPRENDE LAS SIGUIENTES OPERACIONES: PRIMERA, SE REALIZA UNA UNION SOBRE LA SUPERFICIE ANTERIOR DE LA PLACA DE SUSTRATO SEMI-CONDUCTOR MEDIANTE DIFUSION EN ESTA DE UNA MATERIA DE DOPADO; SEGUNDA, SE RECUBRE LA SUPERFICIE ANTERIOR DOPADA CON UNA CAPA DE MATERIA ANTI-REFLECTANTE; TERCERA, SE RECUBRE MEDIANTE SERIGRAFIA LA CAPA DE MATERIA ANTI-REFLECTANTE CON UNA CAPA A BASE DE PLATA; CUARTA, SE SOMETE LA PASTA A BASE DE PLATA A UN TRATAMIENTO TERMICO; Y POR ULTIMO, SE SOMETE LA SUPERFICIE POSTERIOR DE LA PLACA A UN TRATAMIENTO ANALOGO AL MENCIONADO.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU83831A LU83831A1 (fr) | 1981-12-10 | 1981-12-10 | Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8501169A1 true ES8501169A1 (es) | 1984-11-01 |
| ES530223A0 ES530223A0 (es) | 1984-11-01 |
Family
ID=19729782
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES518107A Granted ES518107A0 (es) | 1981-12-10 | 1982-12-10 | Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica. |
| ES530223A Granted ES530223A0 (es) | 1981-12-10 | 1984-03-01 | Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicas |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES518107A Granted ES518107A0 (es) | 1981-12-10 | 1982-12-10 | Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica. |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP0108065B1 (es) |
| JP (1) | JPS58502078A (es) |
| DE (1) | DE3274927D1 (es) |
| ES (2) | ES518107A0 (es) |
| GR (1) | GR79601B (es) |
| IT (1) | IT1191122B (es) |
| LU (1) | LU83831A1 (es) |
| PT (1) | PT75974B (es) |
| WO (1) | WO1983002200A1 (es) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151386A (en) * | 1990-08-01 | 1992-09-29 | Mobil Solar Energy Corporation | Method of applying metallized contacts to a solar cell |
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| JP2000138386A (ja) * | 1998-11-04 | 2000-05-16 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法およびこの方法で製造された太陽電池 |
| DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
| WO2003047005A2 (en) * | 2001-11-26 | 2003-06-05 | Shell Solar Gmbh | Manufacturing a solar cell with backside contacts |
| JP3926822B2 (ja) * | 2005-02-03 | 2007-06-06 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN101675531B (zh) | 2007-02-16 | 2013-03-06 | 纳克公司 | 太阳能电池结构、光生伏打模块及对应的工艺 |
| TWI449183B (zh) * | 2007-06-13 | 2014-08-11 | Schott Solar Ag | 半導體元件及製造金屬半導體接點之方法 |
| JP4978759B1 (ja) * | 2010-11-17 | 2012-07-18 | 日立化成工業株式会社 | 太陽電池の製造方法 |
| US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2412164A1 (fr) * | 1977-12-13 | 1979-07-13 | Radiotechnique Compelec | Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede |
| US4158591A (en) * | 1978-04-24 | 1979-06-19 | Atlantic Richfield Company | Solar cell manufacture |
| US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
-
1981
- 1981-12-10 LU LU83831A patent/LU83831A1/fr unknown
-
1982
- 1982-12-09 DE DE8383900009T patent/DE3274927D1/de not_active Expired
- 1982-12-09 JP JP83500001A patent/JPS58502078A/ja active Pending
- 1982-12-09 EP EP83900009A patent/EP0108065B1/en not_active Expired
- 1982-12-09 WO PCT/BE1982/000024 patent/WO1983002200A1/en active IP Right Grant
- 1982-12-09 GR GR70029A patent/GR79601B/el unknown
- 1982-12-10 ES ES518107A patent/ES518107A0/es active Granted
- 1982-12-10 IT IT24680/82A patent/IT1191122B/it active
- 1982-12-10 PT PT75974A patent/PT75974B/pt not_active IP Right Cessation
-
1984
- 1984-03-01 ES ES530223A patent/ES530223A0/es active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT8224680A0 (it) | 1982-12-10 |
| GR79601B (es) | 1984-10-31 |
| ES8405557A1 (es) | 1984-06-01 |
| IT8224680A1 (it) | 1984-06-10 |
| WO1983002200A1 (en) | 1983-06-23 |
| ES518107A0 (es) | 1984-06-01 |
| PT75974B (fr) | 1985-11-18 |
| IT1191122B (it) | 1988-02-24 |
| DE3274927D1 (en) | 1987-02-05 |
| LU83831A1 (fr) | 1983-09-01 |
| ES530223A0 (es) | 1984-11-01 |
| EP0108065A1 (en) | 1984-05-16 |
| JPS58502078A (ja) | 1983-12-01 |
| PT75974A (fr) | 1983-01-01 |
| EP0108065B1 (en) | 1986-12-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19970303 |