JPS5353267A - Composite diode - Google Patents

Composite diode

Info

Publication number
JPS5353267A
JPS5353267A JP12781076A JP12781076A JPS5353267A JP S5353267 A JPS5353267 A JP S5353267A JP 12781076 A JP12781076 A JP 12781076A JP 12781076 A JP12781076 A JP 12781076A JP S5353267 A JPS5353267 A JP S5353267A
Authority
JP
Japan
Prior art keywords
composite diode
providing
type
area
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12781076A
Other languages
Japanese (ja)
Inventor
Tadashi Ikeda
Tsutomu Koga
Takashi Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12781076A priority Critical patent/JPS5353267A/en
Publication of JPS5353267A publication Critical patent/JPS5353267A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the V-I characteristics over a broad voltage area, by forming Schottky barrier on the surface of N type Si substrate, providing the P type diffusing area, and providing the Pt silicide layer.
JP12781076A 1976-10-26 1976-10-26 Composite diode Pending JPS5353267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12781076A JPS5353267A (en) 1976-10-26 1976-10-26 Composite diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12781076A JPS5353267A (en) 1976-10-26 1976-10-26 Composite diode

Publications (1)

Publication Number Publication Date
JPS5353267A true JPS5353267A (en) 1978-05-15

Family

ID=14969221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12781076A Pending JPS5353267A (en) 1976-10-26 1976-10-26 Composite diode

Country Status (1)

Country Link
JP (1) JPS5353267A (en)

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