JPS5353267A - Composite diode - Google Patents
Composite diodeInfo
- Publication number
- JPS5353267A JPS5353267A JP12781076A JP12781076A JPS5353267A JP S5353267 A JPS5353267 A JP S5353267A JP 12781076 A JP12781076 A JP 12781076A JP 12781076 A JP12781076 A JP 12781076A JP S5353267 A JPS5353267 A JP S5353267A
- Authority
- JP
- Japan
- Prior art keywords
- composite diode
- providing
- type
- area
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the V-I characteristics over a broad voltage area, by forming Schottky barrier on the surface of N type Si substrate, providing the P type diffusing area, and providing the Pt silicide layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12781076A JPS5353267A (en) | 1976-10-26 | 1976-10-26 | Composite diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12781076A JPS5353267A (en) | 1976-10-26 | 1976-10-26 | Composite diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5353267A true JPS5353267A (en) | 1978-05-15 |
Family
ID=14969221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12781076A Pending JPS5353267A (en) | 1976-10-26 | 1976-10-26 | Composite diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5353267A (en) |
-
1976
- 1976-10-26 JP JP12781076A patent/JPS5353267A/en active Pending
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