IT8224680A0 - Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi'ottenuti. - Google Patents

Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi'ottenuti.

Info

Publication number
IT8224680A0
IT8224680A0 IT8224680A IT2468082A IT8224680A0 IT 8224680 A0 IT8224680 A0 IT 8224680A0 IT 8224680 A IT8224680 A IT 8224680A IT 2468082 A IT2468082 A IT 2468082A IT 8224680 A0 IT8224680 A0 IT 8224680A0
Authority
IT
Italy
Prior art keywords
devices
semi
procedure
manufacturing semiconductor
conductor
Prior art date
Application number
IT8224680A
Other languages
English (en)
Other versions
IT1191122B (it
IT8224680A1 (it
Inventor
Louis Frisson
Robert Janssens
Mia Honore
Robert Pierre Mertens
Roger Van Overstraeten
Original Assignee
Belge Etat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Belge Etat filed Critical Belge Etat
Publication of IT8224680A0 publication Critical patent/IT8224680A0/it
Publication of IT8224680A1 publication Critical patent/IT8224680A1/it
Application granted granted Critical
Publication of IT1191122B publication Critical patent/IT1191122B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
IT24680/82A 1981-12-10 1982-12-10 Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti IT1191122B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
LU83831A LU83831A1 (fr) 1981-12-10 1981-12-10 Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus

Publications (3)

Publication Number Publication Date
IT8224680A0 true IT8224680A0 (it) 1982-12-10
IT8224680A1 IT8224680A1 (it) 1984-06-10
IT1191122B IT1191122B (it) 1988-02-24

Family

ID=19729782

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24680/82A IT1191122B (it) 1981-12-10 1982-12-10 Procedimento di fabbricazione di dispositivi semiconduttori e dispositivi semi-conduttori cosi' ottenuti

Country Status (9)

Country Link
EP (1) EP0108065B1 (it)
JP (1) JPS58502078A (it)
DE (1) DE3274927D1 (it)
ES (2) ES518107A0 (it)
GR (1) GR79601B (it)
IT (1) IT1191122B (it)
LU (1) LU83831A1 (it)
PT (1) PT75974B (it)
WO (1) WO1983002200A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151386A (en) * 1990-08-01 1992-09-29 Mobil Solar Energy Corporation Method of applying metallized contacts to a solar cell
US5118362A (en) * 1990-09-24 1992-06-02 Mobil Solar Energy Corporation Electrical contacts and methods of manufacturing same
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
AU2002352156B2 (en) * 2001-11-26 2007-08-09 Shell Solar Gmbh Manufacturing a solar cell with backside contacts
JP3926822B2 (ja) * 2005-02-03 2007-06-06 三菱電機株式会社 半導体装置及び半導体装置の製造方法
CN103077978B (zh) * 2007-02-16 2016-12-28 纳克公司 太阳能电池结构、光生伏打模块及对应的工艺
TWI449183B (zh) * 2007-06-13 2014-08-11 Schott Solar Ag 半導體元件及製造金屬半導體接點之方法
JP4978759B1 (ja) * 2010-11-17 2012-07-18 日立化成工業株式会社 太陽電池の製造方法
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412164A1 (fr) * 1977-12-13 1979-07-13 Radiotechnique Compelec Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede
US4158591A (en) * 1978-04-24 1979-06-19 Atlantic Richfield Company Solar cell manufacture
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
JPS58502078A (ja) 1983-12-01
IT1191122B (it) 1988-02-24
LU83831A1 (fr) 1983-09-01
IT8224680A1 (it) 1984-06-10
PT75974A (fr) 1983-01-01
EP0108065A1 (en) 1984-05-16
ES8405557A1 (es) 1984-06-01
GR79601B (it) 1984-10-31
WO1983002200A1 (en) 1983-06-23
ES530223A0 (es) 1984-11-01
ES518107A0 (es) 1984-06-01
DE3274927D1 (en) 1987-02-05
ES8501169A1 (es) 1984-11-01
PT75974B (fr) 1985-11-18
EP0108065B1 (en) 1986-12-30

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