IT8224641A0 - Procedimento per la formazione di caratteristiche d'ordine sub-micron in dispositivi a semiconduttori. - Google Patents

Procedimento per la formazione di caratteristiche d'ordine sub-micron in dispositivi a semiconduttori.

Info

Publication number
IT8224641A0
IT8224641A0 IT8224641A IT2464182A IT8224641A0 IT 8224641 A0 IT8224641 A0 IT 8224641A0 IT 8224641 A IT8224641 A IT 8224641A IT 2464182 A IT2464182 A IT 2464182A IT 8224641 A0 IT8224641 A0 IT 8224641A0
Authority
IT
Italy
Prior art keywords
sub
procedure
formation
semiconductor devices
micron order
Prior art date
Application number
IT8224641A
Other languages
English (en)
Other versions
IT1153379B (it
IT8224641A1 (it
Inventor
Eliezer Kinsbron
William Thomas Lynch
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8224641A0 publication Critical patent/IT8224641A0/it
Publication of IT8224641A1 publication Critical patent/IT8224641A1/it
Application granted granted Critical
Publication of IT1153379B publication Critical patent/IT1153379B/it

Links

Classifications

    • H10P76/4085—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H10D64/01328—
    • H10P14/6328—
    • H10P50/267—
    • H10P50/268—
    • H10P50/283—
    • H10P76/40—
IT24641/82A 1981-12-07 1982-12-06 Procedimento per la formazione di caratteristiche d'ordine sub-micron in dispositivi a semiconduttori IT1153379B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/328,368 US4432132A (en) 1981-12-07 1981-12-07 Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features

Publications (3)

Publication Number Publication Date
IT8224641A0 true IT8224641A0 (it) 1982-12-06
IT8224641A1 IT8224641A1 (it) 1984-06-06
IT1153379B IT1153379B (it) 1987-01-14

Family

ID=23280714

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24641/82A IT1153379B (it) 1981-12-07 1982-12-06 Procedimento per la formazione di caratteristiche d'ordine sub-micron in dispositivi a semiconduttori

Country Status (8)

Country Link
US (1) US4432132A (it)
JP (1) JPS58106833A (it)
CA (1) CA1201216A (it)
DE (1) DE3245276A1 (it)
FR (1) FR2517881B1 (it)
GB (1) GB2110876B (it)
IT (1) IT1153379B (it)
NL (1) NL8204721A (it)

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US8123968B2 (en) * 2005-08-25 2012-02-28 Round Rock Research, Llc Multiple deposition for integration of spacers in pitch multiplication process
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Also Published As

Publication number Publication date
GB2110876A (en) 1983-06-22
US4432132A (en) 1984-02-21
FR2517881B1 (fr) 1986-03-21
NL8204721A (nl) 1983-07-01
CA1201216A (en) 1986-02-25
DE3245276A1 (de) 1983-06-09
FR2517881A1 (fr) 1983-06-10
IT1153379B (it) 1987-01-14
IT8224641A1 (it) 1984-06-06
GB2110876B (en) 1985-10-02
JPS58106833A (ja) 1983-06-25

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