IT1243103B - Metodo per la fabbricazione di un dispositivo a semiconduttori. - Google Patents
Metodo per la fabbricazione di un dispositivo a semiconduttori.Info
- Publication number
- IT1243103B IT1243103B IT02155090A IT2155090A IT1243103B IT 1243103 B IT1243103 B IT 1243103B IT 02155090 A IT02155090 A IT 02155090A IT 2155090 A IT2155090 A IT 2155090A IT 1243103 B IT1243103 B IT 1243103B
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900007268A KR930000718B1 (ko) | 1990-05-21 | 1990-05-21 | 반도체장치의 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9021550A0 IT9021550A0 (it) | 1990-09-24 |
| IT9021550A1 IT9021550A1 (it) | 1992-03-24 |
| IT1243103B true IT1243103B (it) | 1994-05-24 |
Family
ID=19299238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT02155090A IT1243103B (it) | 1990-05-21 | 1990-09-24 | Metodo per la fabbricazione di un dispositivo a semiconduttori. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0724285B2 (it) |
| KR (1) | KR930000718B1 (it) |
| DE (1) | DE4031414A1 (it) |
| FR (1) | FR2662302B1 (it) |
| GB (1) | GB2244375B (it) |
| IT (1) | IT1243103B (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930006732B1 (ko) * | 1991-05-08 | 1993-07-23 | 재단법인 한국전자통신연구소 | 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
| JPH0736437B2 (ja) * | 1985-11-29 | 1995-04-19 | 株式会社日立製作所 | 半導体メモリの製造方法 |
| JP2569048B2 (ja) * | 1987-05-27 | 1997-01-08 | 株式会社日立製作所 | 半導体メモリの製造方法 |
| DE3856143T2 (de) * | 1987-06-17 | 1998-10-29 | Fujitsu Ltd | Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff |
| JPH01154551A (ja) * | 1987-12-11 | 1989-06-16 | Oki Electric Ind Co Ltd | 半導体メモリ集積回路装置及びその製造方法 |
| KR910010167B1 (ko) * | 1988-06-07 | 1991-12-17 | 삼성전자 주식회사 | 스택 캐패시터 dram셀 및 그의 제조방법 |
| US5116776A (en) * | 1989-11-30 | 1992-05-26 | Sgs-Thomson Microelectronics, Inc. | Method of making a stacked copacitor for dram cell |
| KR920010204B1 (ko) * | 1989-12-02 | 1992-11-21 | 삼성전자 주식회사 | 초고집적 디램셀 및 그 제조방법 |
-
1990
- 1990-05-21 KR KR1019900007268A patent/KR930000718B1/ko not_active IP Right Cessation
- 1990-09-20 JP JP25168890A patent/JPH0724285B2/ja not_active Expired - Lifetime
- 1990-09-20 FR FR909011611A patent/FR2662302B1/fr not_active Expired - Lifetime
- 1990-09-20 GB GB9020502A patent/GB2244375B/en not_active Expired - Lifetime
- 1990-09-24 IT IT02155090A patent/IT1243103B/it active IP Right Grant
- 1990-10-04 DE DE4031414A patent/DE4031414A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2662302A1 (fr) | 1991-11-22 |
| GB2244375B (en) | 1994-06-15 |
| DE4031414A1 (de) | 1991-11-28 |
| KR910020901A (ko) | 1991-12-20 |
| FR2662302B1 (fr) | 1992-08-14 |
| IT9021550A0 (it) | 1990-09-24 |
| JPH0424961A (ja) | 1992-01-28 |
| GB9020502D0 (en) | 1990-10-31 |
| IT9021550A1 (it) | 1992-03-24 |
| GB2244375A (en) | 1991-11-27 |
| JPH0724285B2 (ja) | 1995-03-15 |
| KR930000718B1 (ko) | 1993-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT1243104B (it) | Metodo per la fabbricazione di un semiconduttore. | |
| TR27174A (tr) | Vinilasetatin üretilmesine mahsus usul. | |
| DE69110480D1 (de) | Verbesserter halbleiter-microanemometer. | |
| IT8419317A0 (it) | Procedimento per la produzione di un dispositivo a semiconduttori. | |
| DE69009409D1 (de) | Halbleiter-Heterostrukturen. | |
| DE69009448D1 (de) | Halbleiterlaseranordnung. | |
| IT8322981A0 (it) | Procedimento per la fabbricazione di un dispositivo a semiconduttori. | |
| ITTO920366A1 (it) | Metodo per la fabbricazione di un dispositivo cmos a doppio pozzetto | |
| DE69009626D1 (de) | Masterslice-Halbleitervorrichtung. | |
| DE69021904D1 (de) | Zusammengesetzte Halbleitervorrichtung. | |
| IT8323707A0 (it) | Substrato di cablaggio, procedimento per la sua fabbricazione, e dispositivo a semiconduttore utilizzante il substrato stesso. | |
| IT8420726A0 (it) | Procedimento per produrre dispositivi semiconduttori. | |
| DE69009266D1 (de) | Halbleiterlaser-Vorrichtung. | |
| DE59003052D1 (de) | Halbleiterbauelement. | |
| DE69105530D1 (de) | Halbleiterscheibe. | |
| IT8221430A0 (it) | Procedimento per la fabbricazione di un dispositivo a semiconduttori. | |
| KR900015282A (ko) | 반도체 소자의 제조방법 | |
| DE69125498D1 (de) | Halbleiterverrichtungsherstellungsverfahren | |
| IT1243916B (it) | Metodo di isolamento di un dispositivo a semiconduttori. | |
| KR900019159A (ko) | 반도체장치 제조방법 | |
| DE69010994D1 (de) | Lichtempfindliche Halbleiteranordnung. | |
| IT1243103B (it) | Metodo per la fabbricazione di un dispositivo a semiconduttori. | |
| ITMI913097A1 (it) | Metodo per la fabbricazione di un dispositivo a semiconduttore | |
| DE69111513D1 (de) | Halbleiterherstellungseinrichtung. | |
| IT8324070A0 (it) | Metodo di fabbricazione di un dispositivo semiconduttore. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970926 |