ITMI913097A1 - Metodo per la fabbricazione di un dispositivo a semiconduttore - Google Patents
Metodo per la fabbricazione di un dispositivo a semiconduttoreInfo
- Publication number
- ITMI913097A1 ITMI913097A1 IT003097A ITMI913097A ITMI913097A1 IT MI913097 A1 ITMI913097 A1 IT MI913097A1 IT 003097 A IT003097 A IT 003097A IT MI913097 A ITMI913097 A IT MI913097A IT MI913097 A1 ITMI913097 A1 IT MI913097A1
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910009682A KR930001428A (ko) | 1991-06-12 | 1991-06-12 | 반도체장치의 제조방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI913097A0 ITMI913097A0 (it) | 1991-11-20 |
ITMI913097A1 true ITMI913097A1 (it) | 1993-05-20 |
IT1252285B IT1252285B (it) | 1995-06-08 |
Family
ID=19315689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI913097A IT1252285B (it) | 1991-06-12 | 1991-11-20 | Metodo per la fabbricazione di un dispositivo a semiconduttore |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH04369264A (it) |
KR (1) | KR930001428A (it) |
DE (1) | DE4136303A1 (it) |
FR (1) | FR2677810A1 (it) |
GB (1) | GB2256747A (it) |
IT (1) | IT1252285B (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5818071A (en) * | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
KR100360413B1 (ko) * | 2000-12-19 | 2002-11-13 | 삼성전자 주식회사 | 2단계 열처리에 의한 반도체 메모리 소자의 커패시터 제조방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5978553A (ja) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | キヤパシタおよびその製造方法 |
JPS60242678A (ja) * | 1984-05-17 | 1985-12-02 | Seiko Epson Corp | 半導体記憶装置 |
JPS6347983A (ja) * | 1986-08-18 | 1988-02-29 | Sharp Corp | 炭化珪素電界効果トランジスタ |
-
1991
- 1991-06-12 KR KR1019910009682A patent/KR930001428A/ko not_active Application Discontinuation
- 1991-11-04 DE DE4136303A patent/DE4136303A1/de not_active Ceased
- 1991-11-13 FR FR9113932A patent/FR2677810A1/fr not_active Withdrawn
- 1991-11-13 JP JP3297138A patent/JPH04369264A/ja active Pending
- 1991-11-20 GB GB9124626A patent/GB2256747A/en not_active Withdrawn
- 1991-11-20 IT ITMI913097A patent/IT1252285B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR2677810A1 (fr) | 1992-12-18 |
JPH04369264A (ja) | 1992-12-22 |
KR930001428A (ko) | 1993-01-16 |
DE4136303A1 (de) | 1992-12-17 |
IT1252285B (it) | 1995-06-08 |
GB9124626D0 (en) | 1992-01-08 |
GB2256747A (en) | 1992-12-16 |
ITMI913097A0 (it) | 1991-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |