ES8405557A1 - Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica. - Google Patents
Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica.Info
- Publication number
- ES8405557A1 ES8405557A1 ES518107A ES518107A ES8405557A1 ES 8405557 A1 ES8405557 A1 ES 8405557A1 ES 518107 A ES518107 A ES 518107A ES 518107 A ES518107 A ES 518107A ES 8405557 A1 ES8405557 A1 ES 8405557A1
- Authority
- ES
- Spain
- Prior art keywords
- semi
- layer
- conducting devices
- silk
- front side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
- 238000012216 screening Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PROCEDIMIENTO DE FABRICACION DE UN DISPOSITIVO SEMICONDUCTOR EN PARTICULAR DE UNA CELULA SOLAR FOTOVOLTAICA.CONSISTE EN VARIAS ETAPAS: A) REALIZAR UNA UNION SOBRE LA SUPERFICIE ANTERIOR DE LA PLACA DE SUBSTRATO SEMICONDUCTOR MEDIANTE DIFUSION EN ESTA DE UNA MATERIA DE DOPADO; B) RECUBRIR LA SUPERFICIE ANTERIOR DOPADA CON UNA CAPA DE MATERIA ANTI-REFLECTANTE; C) RECUBRIR POR SERIGRAFIA LA CAPA DE MATERIA ANTI-REFLECTANTE CON UNA CAPA DE PASTA DE BASE DE PLATA; D) SOMETER LA PASTA A BASE DE PLATA A UN TRATAMIENTO TERMICO CONTROLADO; E) APLICAR POR SERIGRAFIAEN AL MENOS UNA PARTE IMPORTANTE DE LA SUPERFICIE POSTERIOR DE LA PLACA DE SUBSTRATO SEMICONDUCTOR UNA PRIMERA CAPA, FORMADA POR UNA PASTA DE ALUMINIO; Y F) APLICAR POR SERIGRAFIA SOBRE LA PRIMERA CAPA DE ALUMINIO, UNA SEGUNDA CAPA CUYO PORCENTAJE DE COBERTURA TIENE DE 10 A 40 FORMADA POR UNA PASTA A BASE DE PLATA O PALADIO O POR UNA SEGUNDA PASTA DE PLATA.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU83831A LU83831A1 (fr) | 1981-12-10 | 1981-12-10 | Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES518107A0 ES518107A0 (es) | 1984-06-01 |
| ES8405557A1 true ES8405557A1 (es) | 1984-06-01 |
Family
ID=19729782
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES518107A Expired ES8405557A1 (es) | 1981-12-10 | 1982-12-10 | Procedimiento de fabricacion de un dispositivo semi-conductor, en particular de una celula solar fotovoltaica. |
| ES530223A Expired ES8501169A1 (es) | 1981-12-10 | 1984-03-01 | Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicas |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES530223A Expired ES8501169A1 (es) | 1981-12-10 | 1984-03-01 | Procedimiento de fabricacion de un elemento semi-conductor, en particular celulas solares fotovoltaicas |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP0108065B1 (es) |
| JP (1) | JPS58502078A (es) |
| DE (1) | DE3274927D1 (es) |
| ES (2) | ES8405557A1 (es) |
| GR (1) | GR79601B (es) |
| IT (1) | IT1191122B (es) |
| LU (1) | LU83831A1 (es) |
| PT (1) | PT75974B (es) |
| WO (1) | WO1983002200A1 (es) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5151386A (en) * | 1990-08-01 | 1992-09-29 | Mobil Solar Energy Corporation | Method of applying metallized contacts to a solar cell |
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| JP2000138386A (ja) * | 1998-11-04 | 2000-05-16 | Shin Etsu Chem Co Ltd | 太陽電池の製造方法およびこの方法で製造された太陽電池 |
| DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| DE10150040A1 (de) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
| US7217883B2 (en) * | 2001-11-26 | 2007-05-15 | Shell Solar Gmbh | Manufacturing a solar cell with backside contacts |
| JP3926822B2 (ja) * | 2005-02-03 | 2007-06-06 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| EP2654089A3 (en) * | 2007-02-16 | 2015-08-12 | Nanogram Corporation | Solar cell structures, photovoltaic modules and corresponding processes |
| TWI449183B (zh) | 2007-06-13 | 2014-08-11 | Schott Solar Ag | 半導體元件及製造金屬半導體接點之方法 |
| JP4978759B1 (ja) * | 2010-11-17 | 2012-07-18 | 日立化成工業株式会社 | 太陽電池の製造方法 |
| US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2412164A1 (fr) * | 1977-12-13 | 1979-07-13 | Radiotechnique Compelec | Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede |
| US4158591A (en) * | 1978-04-24 | 1979-06-19 | Atlantic Richfield Company | Solar cell manufacture |
| US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
-
1981
- 1981-12-10 LU LU83831A patent/LU83831A1/fr unknown
-
1982
- 1982-12-09 GR GR70029A patent/GR79601B/el unknown
- 1982-12-09 JP JP83500001A patent/JPS58502078A/ja active Pending
- 1982-12-09 DE DE8383900009T patent/DE3274927D1/de not_active Expired
- 1982-12-09 WO PCT/BE1982/000024 patent/WO1983002200A1/en active IP Right Grant
- 1982-12-09 EP EP83900009A patent/EP0108065B1/en not_active Expired
- 1982-12-10 PT PT75974A patent/PT75974B/pt not_active IP Right Cessation
- 1982-12-10 IT IT24680/82A patent/IT1191122B/it active
- 1982-12-10 ES ES518107A patent/ES8405557A1/es not_active Expired
-
1984
- 1984-03-01 ES ES530223A patent/ES8501169A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3274927D1 (en) | 1987-02-05 |
| EP0108065A1 (en) | 1984-05-16 |
| IT8224680A1 (it) | 1984-06-10 |
| ES518107A0 (es) | 1984-06-01 |
| IT8224680A0 (it) | 1982-12-10 |
| ES530223A0 (es) | 1984-11-01 |
| IT1191122B (it) | 1988-02-24 |
| JPS58502078A (ja) | 1983-12-01 |
| WO1983002200A1 (en) | 1983-06-23 |
| EP0108065B1 (en) | 1986-12-30 |
| GR79601B (es) | 1984-10-31 |
| LU83831A1 (fr) | 1983-09-01 |
| PT75974A (fr) | 1983-01-01 |
| ES8501169A1 (es) | 1984-11-01 |
| PT75974B (fr) | 1985-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19970203 |