DE3274927D1 - Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained - Google Patents

Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained

Info

Publication number
DE3274927D1
DE3274927D1 DE8383900009T DE3274927T DE3274927D1 DE 3274927 D1 DE3274927 D1 DE 3274927D1 DE 8383900009 T DE8383900009 T DE 8383900009T DE 3274927 T DE3274927 T DE 3274927T DE 3274927 D1 DE3274927 D1 DE 3274927D1
Authority
DE
Germany
Prior art keywords
semi
conducting devices
manufacturing
conducting
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383900009T
Other languages
English (en)
Inventor
Louis Frisson
Robert Janssens
Mia Honore
Robert Pierre Mertens
Overstraeten Roger Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Belge Etat
Original Assignee
Belge Etat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Belge Etat filed Critical Belge Etat
Application granted granted Critical
Publication of DE3274927D1 publication Critical patent/DE3274927D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
DE8383900009T 1981-12-10 1982-12-09 Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained Expired DE3274927D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
LU83831A LU83831A1 (fr) 1981-12-10 1981-12-10 Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus
PCT/BE1982/000024 WO1983002200A1 (en) 1981-12-10 1982-12-09 Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained

Publications (1)

Publication Number Publication Date
DE3274927D1 true DE3274927D1 (en) 1987-02-05

Family

ID=19729782

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383900009T Expired DE3274927D1 (en) 1981-12-10 1982-12-09 Method for manufacturing semi-conducting devices and semi-conducting devices thus obtained

Country Status (9)

Country Link
EP (1) EP0108065B1 (de)
JP (1) JPS58502078A (de)
DE (1) DE3274927D1 (de)
ES (2) ES8405557A1 (de)
GR (1) GR79601B (de)
IT (1) IT1191122B (de)
LU (1) LU83831A1 (de)
PT (1) PT75974B (de)
WO (1) WO1983002200A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151386A (en) * 1990-08-01 1992-09-29 Mobil Solar Energy Corporation Method of applying metallized contacts to a solar cell
US5118362A (en) * 1990-09-24 1992-06-02 Mobil Solar Energy Corporation Electrical contacts and methods of manufacturing same
JP2000138386A (ja) * 1998-11-04 2000-05-16 Shin Etsu Chem Co Ltd 太陽電池の製造方法およびこの方法で製造された太陽電池
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
JP2005510885A (ja) * 2001-11-26 2005-04-21 シェル・ゾラール・ゲーエムベーハー 背面接点を有する太陽電池の製造
JP3926822B2 (ja) * 2005-02-03 2007-06-06 三菱電機株式会社 半導体装置及び半導体装置の製造方法
CN103077978B (zh) 2007-02-16 2016-12-28 纳克公司 太阳能电池结构、光生伏打模块及对应的工艺
TWI449183B (zh) 2007-06-13 2014-08-11 Schott Solar Ag 半導體元件及製造金屬半導體接點之方法
WO2012067117A1 (ja) * 2010-11-17 2012-05-24 日立化成工業株式会社 太陽電池の製造方法
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412164A1 (fr) * 1977-12-13 1979-07-13 Radiotechnique Compelec Procede de creation, par serigraphie, d'un contact a la surface d'un dispositif semi-conducteur et dispositif obtenu par ce procede
US4158591A (en) * 1978-04-24 1979-06-19 Atlantic Richfield Company Solar cell manufacture
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
IT8224680A0 (it) 1982-12-10
ES530223A0 (es) 1984-11-01
ES518107A0 (es) 1984-06-01
JPS58502078A (ja) 1983-12-01
WO1983002200A1 (en) 1983-06-23
IT1191122B (it) 1988-02-24
IT8224680A1 (it) 1984-06-10
ES8501169A1 (es) 1984-11-01
PT75974B (fr) 1985-11-18
ES8405557A1 (es) 1984-06-01
PT75974A (fr) 1983-01-01
LU83831A1 (fr) 1983-09-01
EP0108065B1 (de) 1986-12-30
EP0108065A1 (de) 1984-05-16
GR79601B (de) 1984-10-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee