GB2104290B - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same

Info

Publication number
GB2104290B
GB2104290B GB08223534A GB8223534A GB2104290B GB 2104290 B GB2104290 B GB 2104290B GB 08223534 A GB08223534 A GB 08223534A GB 8223534 A GB8223534 A GB 8223534A GB 2104290 B GB2104290 B GB 2104290B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08223534A
Other versions
GB2104290A (en
Inventor
Yoshio Yokota
Shunichi Hiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2104290A publication Critical patent/GB2104290A/en
Application granted granted Critical
Publication of GB2104290B publication Critical patent/GB2104290B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB08223534A 1981-08-18 1982-08-16 Semiconductor device and method for manufacturing the same Expired GB2104290B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12902281A JPS5830147A (en) 1981-08-18 1981-08-18 Semiconductor device

Publications (2)

Publication Number Publication Date
GB2104290A GB2104290A (en) 1983-03-02
GB2104290B true GB2104290B (en) 1985-08-21

Family

ID=14999210

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08223534A Expired GB2104290B (en) 1981-08-18 1982-08-16 Semiconductor device and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JPS5830147A (en)
DE (1) DE3230568A1 (en)
GB (1) GB2104290B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889328A (en) 1992-02-26 1999-03-30 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58188157A (en) * 1982-04-28 1983-11-02 Toshiba Corp Semiconductor device and manufacture thereof
JPS59119867A (en) * 1982-12-27 1984-07-11 Toshiba Corp Semiconductor device
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS60119777A (en) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp Gate turn-off thyristor
JPS613475A (en) * 1984-06-15 1986-01-09 Sanyo Electric Co Ltd Photovolatic element
CA1306072C (en) * 1987-03-30 1992-08-04 John E. Cronin Refractory metal - titanium nitride conductive structures and processes for forming the same
US4844776A (en) * 1987-12-04 1989-07-04 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making folded extended window field effect transistor
KR940008936B1 (en) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 Highly purified metal material and sputtering target using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2032872B2 (en) * 1970-07-02 1975-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of soft solderable contacts for the installation of semiconductor components in housings
IT979264B (en) * 1973-02-20 1974-09-30 Nuovo Pignone Spa PROCEDURE AND DEVICE FOR HANDLING PIECES OF TES SUTO DURING AUTOMATIC PROCESSING
JPS507430A (en) * 1973-05-18 1975-01-25
US3877063A (en) * 1973-06-27 1975-04-08 Hewlett Packard Co Metallization structure and process for semiconductor devices
FR2238249A1 (en) * 1973-07-16 1975-02-14 Western Electric Co Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate
IT1110843B (en) * 1978-02-27 1986-01-06 Rca Corp Sunken contact for complementary type MOS devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889328A (en) 1992-02-26 1999-03-30 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5976975A (en) 1992-02-26 1999-11-02 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US6147402A (en) 1992-02-26 2000-11-14 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias

Also Published As

Publication number Publication date
DE3230568A1 (en) 1983-03-10
JPS5830147A (en) 1983-02-22
GB2104290A (en) 1983-03-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980816