JPS613475A - Photovolatic element - Google Patents
Photovolatic elementInfo
- Publication number
- JPS613475A JPS613475A JP59124103A JP12410384A JPS613475A JP S613475 A JPS613475 A JP S613475A JP 59124103 A JP59124103 A JP 59124103A JP 12410384 A JP12410384 A JP 12410384A JP S613475 A JPS613475 A JP S613475A
- Authority
- JP
- Japan
- Prior art keywords
- film
- boride
- carbide
- nitride
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 150000004767 nitrides Chemical class 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 abstract description 2
- 229910019742 NbB2 Inorganic materials 0.000 abstract description 2
- 229910033181 TiB2 Inorganic materials 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- -1 LaB2 Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は非晶質太陽電池として用いられる光起電力素子
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photovoltaic element used as an amorphous solar cell.
一般に光起電力素子は透光性絶縁基板上に透明導電膜、
アモルファスシリコン層、裏面電極をこの順序で積層形
成した構造となっている。ところでこのような光起電力
素子の透明導電膜としては通常酸化インジウム・錫、或
いは酸化錫が用いられるがこれらの中の酸素原子、錫原
子がアモルファスシリコン層の形成中にこの層内に熱拡
散し、光電変換効率を低下させる他、アモルファスシリ
コン層形成の際のプラズマ中における電子等の高速荷電
粒子のため透明導電膜表面が損傷され光透過性の低下等
を招き太陽電池としての特性を低下させるという問題が
あった。Generally, a photovoltaic element has a transparent conductive film on a transparent insulating substrate.
It has a structure in which an amorphous silicon layer and a back electrode are laminated in this order. By the way, indium tin oxide or tin oxide is usually used as the transparent conductive film of such photovoltaic elements, but oxygen and tin atoms in these are thermally diffused into the amorphous silicon layer during formation. However, in addition to reducing the photoelectric conversion efficiency, the surface of the transparent conductive film is damaged due to high-speed charged particles such as electrons in the plasma during the formation of the amorphous silicon layer, leading to a decrease in light transmittance and reducing the characteristics as a solar cell. There was a problem with letting it happen.
ちなみにアモルファスシリコン層の１層内における０原
子が２×１０１９ｃｆｆｌ−３の場合変換効率は８．４
９％であるが、０原子が１ ×１０２０ｃｍ−３では変
換効率は７．１４％に低下する。By the way, if the number of 0 atoms in one amorphous silicon layer is 2 x 1019 cffl-3, the conversion efficiency is 8.4.
However, when 0 atoms are 1 x 1020 cm-3, the conversion efficiency decreases to 7.14%.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは透明導電膜とアモルファスシリコン
層との間にホウ化物、炭化物、窒化物等の膜を介在させ
、透明導電膜構成原子のアモルファスシリコン層内への
混入を防止すると共に、アモルファスシリコン層形成に
際しての透明導電膜の損傷もあわせて防止出来、光電変
換効率並びに品質の大幅な向上を図れるようにした光起
電力素子を提供するにある。The present invention has been made in view of the above circumstances, and its purpose is to interpose a film of boride, carbide, nitride, etc. between a transparent conductive film and an amorphous silicon layer, and to remove atoms constituting the transparent conductive film. Provides a photovoltaic device that prevents the mixing of the silica into the amorphous silicon layer and also prevents damage to the transparent conductive film during the formation of the amorphous silicon layer, thereby significantly improving photoelectric conversion efficiency and quality. There is something to do.
本発明に係る光起電力素子は透光性絶縁基板上に透明導
電膜５アモルファスシリコン層及び裏面電極をこの順序
で積層形成した光起電力素子において、前記透明導電膜
とアモルファスシリコン層間に光学的バンドギャップが
２ｅＶ以上のホウ化物。The photovoltaic device according to the present invention is a photovoltaic device in which a transparent conductive film 5, an amorphous silicon layer, and a back electrode are laminated in this order on a light-transmitting insulating substrate, and an optical layer is formed between the transparent conductive film and the amorphous silicon layer. A boride with a band gap of 2 eV or more.
炭化物、窒化物の少なくとも１つを素材とする１又は複
数の膜を１０〜１００人の厚さに介在せしめたこｉを特
徴とする。It is characterized by interposing one or more films made of at least one of carbide and nitride to a thickness of 10 to 100 layers.
以下本発明をその実施例を示す図面に基づき具体的に説
明する。第１図は本発明に係る光起電力素子（以下本発
明品という）を示す断面構造図であり、図中１はガラス
等の透光性絶縁基板、２は５ｎ０２＋ Ｔｎ２０３
・５ｎ０２等を素材とする透明導電膜、護膜、４はアモ
ルファスシリコン層、５はへ１等を素材とする裏面電極
膜を示している。本発明品は透光性絶縁基板１上に透明
導電膜２、ホウ化物。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof. FIG. 1 is a cross-sectional structural diagram showing a photovoltaic device according to the present invention (hereinafter referred to as the product of the present invention), in which 1 is a transparent insulating substrate such as glass, and 2 is a 5n02+Tn203
・The transparent conductive film and protective film are made of 5n02 or the like, 4 is an amorphous silicon layer, and 5 is the back electrode film made of H1 or the like. The product of the present invention includes a transparent conductive film 2 and a boride on a transparent insulating substrate 1.
炭化物、窒化物等で構成される保護膜３、アモルファス
シリコン層４、裏面電極膜５をこの順序で積層形成して
構成されている。上記保護膜３の素材であるホウ化物と
してはＢ５Ｈ２、ＴｉＢ２、ＬａＢ２、ＮｂＢ２等が、
また炭化物としてはＳｉＣ、ＴｉＣ、Ｗ（： 、 Ｚ
ｒＣ等が、更に窒化物としてはＢＮ 、 ＴａＮ 、
ＴｉＮ 、 ＺｎＮ等が用いられる。It is constructed by laminating a protective film 3 made of carbide, nitride, etc., an amorphous silicon layer 4, and a back electrode film 5 in this order. The borides that are the material of the protective film 3 include B5H2, TiB2, LaB2, NbB2, etc.
In addition, carbides include SiC, TiC, W (:, Z
rC, etc., and nitrides such as BN, TaN,
TiN, ZnN, etc. are used.
保護膜３はホウ化物、炭化物５窒化物夫々単独のものを
素材とする非晶質膜を単一、又は複数積層形成してもよ
い。また複数素材の混合状態の非晶質膜であってもよい
。The protective film 3 may be formed by laminating a single amorphous film or a plurality of amorphous films made of boride or carbide penta-nitride. Alternatively, it may be an amorphous film made of a mixture of a plurality of materials.
保護膜３は光学的バンドギャップが２ｅＶ以上の絶縁性
の大きい物質であって膜厚は１０人〜１００人程度であ
る。バンドギャップを２０ν以上としたのは光透過性が
高く、しかも抵抗率を低く維持すべく両者の均衡を図っ
たことによる。The protective film 3 is a highly insulating material with an optical bandgap of 2 eV or more, and has a thickness of about 10 to 100 nanometers. The reason why the bandgap is set to 20ν or more is to achieve a balance between high light transmittance and low resistivity.
膜厚さを１０人〜１００人としたのは１０Å以下では厚
さの均一性確保が難しく、また１００Ａ）；ｌ上では抵
抗が大きくなり過ぎることによる。 −ちなみに膜
厚は単独素材の場合はＳｉＣ：１０〜１００人、 Ｔ
ｉＣ：１０〜３０人、 ＷＣ：１０〜３０人、 Ｂ
Ｐ：１０〜５０人程程度ある。The reason why the film thickness is set to 10 to 100 is because it is difficult to ensure uniformity of the thickness below 10 Å, and the resistance becomes too large above 100 Å). -By the way, the film thickness is SiC: 10 to 100 when using a single material, T
iC: 10-30 people, WC: 10-30 people, B
P: There are about 10 to 50 people.
以下に窒化物、炭化物、ホウ化物についてこれをグロー
放電法、熱ＣＶＤ法により製造する場合の製造条件を示
す。 −・
（１１ａ−ＢＮの製造条件（グロー放電法）成長ガス成
分 Ｂ２Ｈ６＋ＮＨ３＋Ｈ２基板温度 ２
００〜３５０℃
ＲＦパワー １０〜１００ Ｗガス圧
０．１〜Ｉ Ｔｏｒｒ。The manufacturing conditions for manufacturing nitrides, carbides, and borides by the glow discharge method and thermal CVD method are shown below. - (11a-BN manufacturing conditions (glow discharge method) Growth gas component B2H6+NH3+H2 Substrate temperature 2
00~350℃ RF power 10~100W gas pressure
0.1 to I Torr.
（２）ａ−５ｉＣ（ＤＨ造条件（グロー放電法）成長ガ
ス成分 Ｓ：Ｈ４＋ＣＨ４
ＣＭ４に代えてＣ２Ｈ２，’Ｃ２Ｈ４，Ｃ２）１６等で
−もよい基板温度 ２００〜３５０℃ ゛ＲＦ
パワー １０〜１００Ｗ
ガス圧 ０．１〜ＩＴｏｒｒ。(2) a-5iC (DH forming conditions (glow discharge method) Growth gas component S: H4 + CH4 Instead of CM4, C2H2, 'C2H4, C2) 16 etc. may be used - Substrate temperature 200 to 350℃゛RF
Power 10~100W Gas pressure 0.1~ITorr.
＋３） ＢＰの製造条件（熱ＣＶＤ法による場合）成
長ガス Ｂ２Ｈ６＋ＰＨ３
基板温度 １０００℃
第２図は本発明品の試験結果を示すグラフであって、横
軸に透明導電膜側のアモルファスシリコン層表面から裏
面電極膜側への距離を、また縦軸には不純物濃度を１．
Ｍ、Ａ、 （イオンマイクロアナライザ）によって測定
したＯ、Ｓｎの濃度をとって示しである。+3) BP manufacturing conditions (thermal CVD method) Growth gas: B2H6+PH3 Substrate temperature: 1000°C Figure 2 is a graph showing the test results of the product of the present invention, in which the horizontal axis is from the surface of the amorphous silicon layer on the transparent conductive film side. The distance to the back electrode film side is plotted, and the impurity concentration is plotted on the vertical axis.
The concentrations of O and Sn measured by M, A, (ion microanalyzer) are shown.
なお参照のため第３図に従来品におけるアモルファスシ
リコン層中のＯ，Ｓｎの濃度を示しである。For reference, FIG. 3 shows the concentrations of O and Sn in the amorphous silicon layer of a conventional product.
このグラフから明らかなように本発明品に依った場合に
はアモルファスシリコン層内における０１Ｓｎ原子とも
従来品による場合に比較して格段に低下していることが
解る。なお、アモルファスシリコン層形成に際しての高
速荷電粒子の影響も保護膜３の遮蔽機能によって透明導
電膜２の表面損傷も全く生じなかった。そして光起電力
素子としてその特性が１０〜２０％向上することが確認
された。As is clear from this graph, when using the product of the present invention, the number of 01Sn atoms in the amorphous silicon layer is significantly reduced compared to when using the conventional product. Note that no damage to the surface of the transparent conductive film 2 occurred due to the influence of high-speed charged particles during the formation of the amorphous silicon layer and due to the shielding function of the protective film 3. It was confirmed that the properties of the photovoltaic device were improved by 10 to 20%.
以上の如く本発明品に依れば、透明導電膜とアモルファ
スシリコン層との間に介在させることとしたから、透明
導電膜中の酸素、錫原子が熱拡散によって非晶質シリコ
ン膜中に混入するのを防止し得ることは勿論、アモルフ
ァスシリコン層の形成に際し、ての尚速荷電粒子による
透明導電膜の損傷をも併せて防止出来、太陽電池特性の
向上を図れるなど本発明は優れた効果を奏するものであ
る。As described above, according to the product of the present invention, since the transparent conductive film is interposed between the transparent conductive film and the amorphous silicon layer, oxygen and tin atoms in the transparent conductive film are mixed into the amorphous silicon film by thermal diffusion. The present invention has excellent effects such as being able to prevent damage to the transparent conductive film caused by charged particles during the formation of the amorphous silicon layer, and improving solar cell characteristics. It is something that plays.
第１図は本発明品の断面構造図、第２図は本発明品の試
験結果を示すグラフ、第３図は従来品の結果を示すグラ
フである。
１・・・透光性絶縁基板 ２・・・透明導電膜３・・・
保護膜 ４・・・アモルファスシリコン層５・・・裏面
電極膜
特 許 出願人 三洋電機株式会社
代理人 弁理士 河 野 登 夫
第 １ 図
２？ご方向
第 ２ 図
；１ ｙ ８句
第 ３ 図FIG. 1 is a cross-sectional structural diagram of the product of the present invention, FIG. 2 is a graph showing the test results of the product of the present invention, and FIG. 3 is a graph showing the results of the conventional product. 1... Transparent insulating substrate 2... Transparent conductive film 3...
Protective film 4... Amorphous silicon layer 5... Back electrode film patent Applicant Sanyo Electric Co., Ltd. Representative Patent attorney Noboru Kono No. 1 Figure 2? Directions Figure 2; 1 y 8th verse Figure 3
Claims (1)
コン層及び裏面電極膜をこの順序で積層形成した光起電
力素子において、前記透明導電膜とアモルファスシリコ
ン層間に光学的バンドギャップが２ｅＶ以上のホウ化物
、炭化物、窒化物の少なくとも１つを素材とする１又は
複数の膜を１０〜１００Åの厚さに介在せしめたことを
特徴とする光起電力素子。 ２、前記ホウ化物、炭化物、窒化物は非晶質である特許
請求の範囲第１項記載の光起電力素子。[Claims] 1. In a photovoltaic element in which a transparent conductive film, an amorphous silicon layer, and a back electrode film are laminated in this order on a light-transmitting insulating substrate, an optical layer is formed between the transparent conductive film and the amorphous silicon layer. 1. A photovoltaic device comprising one or more films made of at least one of borides, carbides, and nitrides having a band gap of 2 eV or more and having a thickness of 10 to 100 Å. 2. The photovoltaic device according to claim 1, wherein the boride, carbide, and nitride are amorphous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59124103A JPS613475A (en) | 1984-06-15 | 1984-06-15 | Photovolatic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59124103A JPS613475A (en) | 1984-06-15 | 1984-06-15 | Photovolatic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS613475A true JPS613475A (en) | 1986-01-09 |
Family
ID=14876996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59124103A Pending JPS613475A (en) | 1984-06-15 | 1984-06-15 | Photovolatic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS613475A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5741533A (en) * | 1995-12-22 | 1998-04-21 | W. R. Grace & Co.-Conn. | Method of cooking a food product and product thereof |
| JP2001291878A (en) * | 2000-04-05 | 2001-10-19 | Tdk Corp | Photovoltaic element and its manufacturing method |
| JP2001291883A (en) * | 2000-04-05 | 2001-10-19 | Tdk Corp | Photovoltaic element and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS5830147A (en) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | Semiconductor device |
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS60216588A (en) * | 1984-04-11 | 1985-10-30 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
-
1984
- 1984-06-15 JP JP59124103A patent/JPS613475A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS5830147A (en) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | Semiconductor device |
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS60216588A (en) * | 1984-04-11 | 1985-10-30 | Hitachi Maxell Ltd | Semiconductor photoelectric conversion device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5741533A (en) * | 1995-12-22 | 1998-04-21 | W. R. Grace & Co.-Conn. | Method of cooking a food product and product thereof |
| US6117464A (en) * | 1995-12-22 | 2000-09-12 | Cryovac, Inc. | Cook-in food package with peelable laminate |
| JP2001291878A (en) * | 2000-04-05 | 2001-10-19 | Tdk Corp | Photovoltaic element and its manufacturing method |
| JP2001291883A (en) * | 2000-04-05 | 2001-10-19 | Tdk Corp | Photovoltaic element and its manufacturing method |
| JP4730678B2 (en) * | 2000-04-05 | 2011-07-20 | Ｔｄｋ株式会社 | Photovoltaic element manufacturing method |
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