ES2535873T3 - Grabado químico selectivo de una matriz polimérica de nanotubos de carbono (NTC) sobre una subestructura plástica - Google Patents

Grabado químico selectivo de una matriz polimérica de nanotubos de carbono (NTC) sobre una subestructura plástica Download PDF

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Publication number
ES2535873T3
ES2535873T3 ES11716380.8T ES11716380T ES2535873T3 ES 2535873 T3 ES2535873 T3 ES 2535873T3 ES 11716380 T ES11716380 T ES 11716380T ES 2535873 T3 ES2535873 T3 ES 2535873T3
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Spain
Prior art keywords
chemical etching
ntc
polymeric matrix
carbon nanotubes
selective chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES11716380.8T
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English (en)
Spanish (es)
Inventor
Werner Stockum
Arjan Meijer
Ingo Koehler
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Merck Patent GmbH
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Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of ES2535873T3 publication Critical patent/ES2535873T3/es
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Weting (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Materials For Photolithography (AREA)
  • Printing Plates And Materials Therefor (AREA)
ES11716380.8T 2010-05-21 2011-04-26 Grabado químico selectivo de una matriz polimérica de nanotubos de carbono (NTC) sobre una subestructura plástica Active ES2535873T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10005321 2010-05-21
EP10005321 2010-05-21
PCT/EP2011/002085 WO2011144292A2 (en) 2010-05-21 2011-04-26 Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure

Publications (1)

Publication Number Publication Date
ES2535873T3 true ES2535873T3 (es) 2015-05-18

Family

ID=44626002

Family Applications (1)

Application Number Title Priority Date Filing Date
ES11716380.8T Active ES2535873T3 (es) 2010-05-21 2011-04-26 Grabado químico selectivo de una matriz polimérica de nanotubos de carbono (NTC) sobre una subestructura plástica

Country Status (10)

Country Link
US (1) US8809112B2 (https=)
EP (1) EP2572388B1 (https=)
JP (1) JP5778256B2 (https=)
KR (1) KR20130119332A (https=)
CN (1) CN102893421B (https=)
ES (1) ES2535873T3 (https=)
PH (1) PH12012501869A1 (https=)
SG (1) SG185550A1 (https=)
TW (1) TWI502782B (https=)
WO (1) WO2011144292A2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8999186B2 (en) * 2011-04-28 2015-04-07 Merck Patent Gmbh Selectively etching of a polymer matrix on pet
EP2587564A1 (en) * 2011-10-27 2013-05-01 Merck Patent GmbH Selective etching of a matrix comprising silver nanowires or carbon nanotubes
TWI488943B (zh) * 2013-04-29 2015-06-21 Chi Mei Corp 蝕刻膏組成物及其應用
CN104952717B (zh) * 2014-03-26 2018-04-06 苏州汉纳材料科技有限公司 基于碳材料的透明导电薄膜、其工业化制法及应用
KR101535386B1 (ko) * 2014-07-09 2015-07-08 노재호 잉크 또는 도료 식각용 식각용액 및 이를 이용한 잉크 또는 도료 패턴의 제조방법
CN106276778B (zh) * 2015-05-21 2018-08-14 清华大学 一种金属纳米线膜的制备方法以及导电元件
KR102501463B1 (ko) * 2015-05-21 2023-02-20 삼성전자주식회사 이차원 물질을 사용한 플렉서블 인터커넥트 레이어를 포함하는 유연소자
US10614928B2 (en) 2017-04-17 2020-04-07 Philippe Hansen-Estruch Biodegradable flexible lightweight energy storage composite and methods of making the same
US11993719B2 (en) 2017-10-27 2024-05-28 National Research Council Of Canada Boron nitride nanotube coated substrates for sintering of metallic traces by intense pulse light
CN110034007B (zh) * 2018-01-12 2021-07-09 东北师范大学 一种实现透明可拉伸电极超高精度图案化的方法
CN113736466B (zh) * 2020-05-29 2023-05-12 新应材股份有限公司 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺
TWI751568B (zh) * 2020-05-29 2022-01-01 新應材股份有限公司 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424054A (en) 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US6221330B1 (en) 1997-08-04 2001-04-24 Hyperion Catalysis International Inc. Process for producing single wall nanotubes using unsupported metal catalysts
KR100376768B1 (ko) 2000-08-23 2003-03-19 한국과학기술연구원 전자, 스핀 및 광소자 응용을 위한 탄소나노튜브의 선택적 수평성장 방법
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
DE10333704B4 (de) * 2003-07-23 2009-12-17 Ovd Kinegram Ag Sicherheitselement zur RF-Identifikation
TWI276140B (en) * 2003-09-23 2007-03-11 Ind Tech Res Inst Method of forming carbon nanotube field emission source
JP2005327965A (ja) 2004-05-17 2005-11-24 Shachihata Inc 光起電力装置
TWI241414B (en) * 2004-07-23 2005-10-11 Ind Tech Res Inst Carbon nanotubes as probes of MEMS devices and manufacturing method thereof
WO2008051205A2 (en) 2005-10-14 2008-05-02 Eikos, Inc. Carbon nanotube use in solar cell applications
US7927666B2 (en) * 2006-06-30 2011-04-19 The University Of Akron Aligned carbon nanotube-polymer materials, systems and methods
JP5020591B2 (ja) * 2006-09-29 2012-09-05 鶴見曹達株式会社 導電性高分子用エッチング液および導電性高分子をパターニングする方法
DE102006051952A1 (de) * 2006-11-01 2008-05-08 Merck Patent Gmbh Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten
KR100883737B1 (ko) * 2007-01-17 2009-02-12 삼성전자주식회사 망상 탄소나노튜브 박막층을 포함하는 탄소나노튜브 투명전극 및 그의 제조방법
US8445385B2 (en) 2008-04-11 2013-05-21 Sandisk 3D Llc Methods for etching carbon nano-tube films for use in non-volatile memories
CN101276789B (zh) * 2008-05-07 2011-08-17 李毅 一种非晶硅太阳能电池铝膜蚀刻方法及蚀刻油墨
WO2010010838A1 (ja) * 2008-07-25 2010-01-28 コニカミノルタホールディングス株式会社 透明電極および透明電極の製造方法
TWI452011B (zh) * 2010-01-20 2014-09-11 鴻海精密工業股份有限公司 碳奈米管裝置製造方法

Also Published As

Publication number Publication date
EP2572388A2 (en) 2013-03-27
SG185550A1 (en) 2012-12-28
TWI502782B (zh) 2015-10-01
CN102893421A (zh) 2013-01-23
WO2011144292A3 (en) 2012-01-26
EP2572388B1 (en) 2015-01-07
JP5778256B2 (ja) 2015-09-16
KR20130119332A (ko) 2013-10-31
CN102893421B (zh) 2016-01-20
TW201228065A (en) 2012-07-01
US20130065359A1 (en) 2013-03-14
JP2013527612A (ja) 2013-06-27
WO2011144292A2 (en) 2011-11-24
US8809112B2 (en) 2014-08-19
PH12012501869A1 (en) 2013-01-07

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