JP5778256B2 - カーボンナノチューブ（ｃｎｔ）ポリマーマトリックスのプラスチック基礎構造上への選択的エッチング - Google Patents

カーボンナノチューブ（ｃｎｔ）ポリマーマトリックスのプラスチック基礎構造上への選択的エッチング Download PDF

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JP5778256B2
JP5778256B2 JP2013510512A JP2013510512A JP5778256B2 JP 5778256 B2 JP5778256 B2 JP 5778256B2 JP 2013510512 A JP2013510512 A JP 2013510512A JP 2013510512 A JP2013510512 A JP 2013510512A JP 5778256 B2 JP5778256 B2 JP 5778256B2
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Prior art keywords
etching
polymer
etching paste
poly
substrate
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Japanese (ja)
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JP2013527612A5 (https=
JP2013527612A (ja
Inventor
シュトックム，ヴェルナー
マイヤー，アルヤン
ケーラー，インゴ
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Merck Patent GmbH
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Merck Patent GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Weting (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Materials For Photolithography (AREA)
  • Printing Plates And Materials Therefor (AREA)
JP2013510512A 2010-05-21 2011-04-26 カーボンナノチューブ（ｃｎｔ）ポリマーマトリックスのプラスチック基礎構造上への選択的エッチング Expired - Fee Related JP5778256B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10005321 2010-05-21
EP10005321.4 2010-05-21
PCT/EP2011/002085 WO2011144292A2 (en) 2010-05-21 2011-04-26 Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure

Publications (3)

Publication Number Publication Date
JP2013527612A JP2013527612A (ja) 2013-06-27
JP2013527612A5 JP2013527612A5 (https=) 2014-06-19
JP5778256B2 true JP5778256B2 (ja) 2015-09-16

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JP2013510512A Expired - Fee Related JP5778256B2 (ja) 2010-05-21 2011-04-26 カーボンナノチューブ（ｃｎｔ）ポリマーマトリックスのプラスチック基礎構造上への選択的エッチング

Country Status (10)

Country Link
US (1) US8809112B2 (https=)
EP (1) EP2572388B1 (https=)
JP (1) JP5778256B2 (https=)
KR (1) KR20130119332A (https=)
CN (1) CN102893421B (https=)
ES (1) ES2535873T3 (https=)
PH (1) PH12012501869A1 (https=)
SG (1) SG185550A1 (https=)
TW (1) TWI502782B (https=)
WO (1) WO2011144292A2 (https=)

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US8999186B2 (en) * 2011-04-28 2015-04-07 Merck Patent Gmbh Selectively etching of a polymer matrix on pet
EP2587564A1 (en) * 2011-10-27 2013-05-01 Merck Patent GmbH Selective etching of a matrix comprising silver nanowires or carbon nanotubes
TWI488943B (zh) * 2013-04-29 2015-06-21 Chi Mei Corp 蝕刻膏組成物及其應用
CN104952717B (zh) * 2014-03-26 2018-04-06 苏州汉纳材料科技有限公司 基于碳材料的透明导电薄膜、其工业化制法及应用
KR101535386B1 (ko) * 2014-07-09 2015-07-08 노재호 잉크 또는 도료 식각용 식각용액 및 이를 이용한 잉크 또는 도료 패턴의 제조방법
CN106276778B (zh) * 2015-05-21 2018-08-14 清华大学 一种金属纳米线膜的制备方法以及导电元件
KR102501463B1 (ko) * 2015-05-21 2023-02-20 삼성전자주식회사 이차원 물질을 사용한 플렉서블 인터커넥트 레이어를 포함하는 유연소자
US10614928B2 (en) 2017-04-17 2020-04-07 Philippe Hansen-Estruch Biodegradable flexible lightweight energy storage composite and methods of making the same
US11993719B2 (en) 2017-10-27 2024-05-28 National Research Council Of Canada Boron nitride nanotube coated substrates for sintering of metallic traces by intense pulse light
CN110034007B (zh) * 2018-01-12 2021-07-09 东北师范大学 一种实现透明可拉伸电极超高精度图案化的方法
CN113736466B (zh) * 2020-05-29 2023-05-12 新应材股份有限公司 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺
TWI751568B (zh) * 2020-05-29 2022-01-01 新應材股份有限公司 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程

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US5424054A (en) 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US6221330B1 (en) 1997-08-04 2001-04-24 Hyperion Catalysis International Inc. Process for producing single wall nanotubes using unsupported metal catalysts
KR100376768B1 (ko) 2000-08-23 2003-03-19 한국과학기술연구원 전자, 스핀 및 광소자 응용을 위한 탄소나노튜브의 선택적 수평성장 방법
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
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DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
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JP5020591B2 (ja) * 2006-09-29 2012-09-05 鶴見曹達株式会社 導電性高分子用エッチング液および導電性高分子をパターニングする方法
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Also Published As

Publication number Publication date
EP2572388A2 (en) 2013-03-27
SG185550A1 (en) 2012-12-28
TWI502782B (zh) 2015-10-01
CN102893421A (zh) 2013-01-23
ES2535873T3 (es) 2015-05-18
WO2011144292A3 (en) 2012-01-26
EP2572388B1 (en) 2015-01-07
KR20130119332A (ko) 2013-10-31
CN102893421B (zh) 2016-01-20
TW201228065A (en) 2012-07-01
US20130065359A1 (en) 2013-03-14
JP2013527612A (ja) 2013-06-27
WO2011144292A2 (en) 2011-11-24
US8809112B2 (en) 2014-08-19
PH12012501869A1 (en) 2013-01-07

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