PH12012501869A1 - Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure - Google Patents

Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure

Info

Publication number
PH12012501869A1
PH12012501869A1 PH1/2012/501869A PH12012501869A PH12012501869A1 PH 12012501869 A1 PH12012501869 A1 PH 12012501869A1 PH 12012501869 A PH12012501869 A PH 12012501869A PH 12012501869 A1 PH12012501869 A1 PH 12012501869A1
Authority
PH
Philippines
Prior art keywords
cnt
polymer matrix
carbon nano
nano tubes
selectively etching
Prior art date
Application number
PH1/2012/501869A
Other languages
English (en)
Inventor
Ingo Koehler
Arjan Meijer
Werner Stockum
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of PH12012501869A1 publication Critical patent/PH12012501869A1/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • H10K30/82Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Weting (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Materials For Photolithography (AREA)
  • Printing Plates And Materials Therefor (AREA)
PH1/2012/501869A 2010-05-21 2011-04-26 Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure PH12012501869A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10005321 2010-05-21
PCT/EP2011/002085 WO2011144292A2 (en) 2010-05-21 2011-04-26 Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure

Publications (1)

Publication Number Publication Date
PH12012501869A1 true PH12012501869A1 (en) 2013-01-07

Family

ID=44626002

Family Applications (1)

Application Number Title Priority Date Filing Date
PH1/2012/501869A PH12012501869A1 (en) 2010-05-21 2011-04-26 Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure

Country Status (10)

Country Link
US (1) US8809112B2 (https=)
EP (1) EP2572388B1 (https=)
JP (1) JP5778256B2 (https=)
KR (1) KR20130119332A (https=)
CN (1) CN102893421B (https=)
ES (1) ES2535873T3 (https=)
PH (1) PH12012501869A1 (https=)
SG (1) SG185550A1 (https=)
TW (1) TWI502782B (https=)
WO (1) WO2011144292A2 (https=)

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US8999186B2 (en) * 2011-04-28 2015-04-07 Merck Patent Gmbh Selectively etching of a polymer matrix on pet
EP2587564A1 (en) * 2011-10-27 2013-05-01 Merck Patent GmbH Selective etching of a matrix comprising silver nanowires or carbon nanotubes
TWI488943B (zh) * 2013-04-29 2015-06-21 Chi Mei Corp 蝕刻膏組成物及其應用
CN104952717B (zh) * 2014-03-26 2018-04-06 苏州汉纳材料科技有限公司 基于碳材料的透明导电薄膜、其工业化制法及应用
KR101535386B1 (ko) * 2014-07-09 2015-07-08 노재호 잉크 또는 도료 식각용 식각용액 및 이를 이용한 잉크 또는 도료 패턴의 제조방법
CN106276778B (zh) * 2015-05-21 2018-08-14 清华大学 一种金属纳米线膜的制备方法以及导电元件
KR102501463B1 (ko) * 2015-05-21 2023-02-20 삼성전자주식회사 이차원 물질을 사용한 플렉서블 인터커넥트 레이어를 포함하는 유연소자
US10614928B2 (en) 2017-04-17 2020-04-07 Philippe Hansen-Estruch Biodegradable flexible lightweight energy storage composite and methods of making the same
US11993719B2 (en) 2017-10-27 2024-05-28 National Research Council Of Canada Boron nitride nanotube coated substrates for sintering of metallic traces by intense pulse light
CN110034007B (zh) * 2018-01-12 2021-07-09 东北师范大学 一种实现透明可拉伸电极超高精度图案化的方法
CN113736466B (zh) * 2020-05-29 2023-05-12 新应材股份有限公司 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺
TWI751568B (zh) * 2020-05-29 2022-01-01 新應材股份有限公司 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程

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US6221330B1 (en) 1997-08-04 2001-04-24 Hyperion Catalysis International Inc. Process for producing single wall nanotubes using unsupported metal catalysts
KR100376768B1 (ko) 2000-08-23 2003-03-19 한국과학기술연구원 전자, 스핀 및 광소자 응용을 위한 탄소나노튜브의 선택적 수평성장 방법
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
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JP5020591B2 (ja) * 2006-09-29 2012-09-05 鶴見曹達株式会社 導電性高分子用エッチング液および導電性高分子をパターニングする方法
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Also Published As

Publication number Publication date
EP2572388A2 (en) 2013-03-27
SG185550A1 (en) 2012-12-28
TWI502782B (zh) 2015-10-01
CN102893421A (zh) 2013-01-23
ES2535873T3 (es) 2015-05-18
WO2011144292A3 (en) 2012-01-26
EP2572388B1 (en) 2015-01-07
JP5778256B2 (ja) 2015-09-16
KR20130119332A (ko) 2013-10-31
CN102893421B (zh) 2016-01-20
TW201228065A (en) 2012-07-01
US20130065359A1 (en) 2013-03-14
JP2013527612A (ja) 2013-06-27
WO2011144292A2 (en) 2011-11-24
US8809112B2 (en) 2014-08-19

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