KR20130119332A - 플라스틱 하부구조상의 탄소나노튜브 (cnt) 폴리머 매트릭스의 선택적 식각 - Google Patents

플라스틱 하부구조상의 탄소나노튜브 (cnt) 폴리머 매트릭스의 선택적 식각 Download PDF

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Publication number
KR20130119332A
KR20130119332A KR1020127033360A KR20127033360A KR20130119332A KR 20130119332 A KR20130119332 A KR 20130119332A KR 1020127033360 A KR1020127033360 A KR 1020127033360A KR 20127033360 A KR20127033360 A KR 20127033360A KR 20130119332 A KR20130119332 A KR 20130119332A
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South Korea
Prior art keywords
etching
polymer
polymer matrix
poly
substrate
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Ceased
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KR1020127033360A
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English (en)
Korean (ko)
Inventor
베르너 슈토쿰
아르얀 메이어르
잉고 쾰러
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메르크 파텐트 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Weting (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Materials For Photolithography (AREA)
  • Printing Plates And Materials Therefor (AREA)
KR1020127033360A 2010-05-21 2011-04-26 플라스틱 하부구조상의 탄소나노튜브 (cnt) 폴리머 매트릭스의 선택적 식각 Ceased KR20130119332A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10005321 2010-05-21
EP10005321.4 2010-05-21
PCT/EP2011/002085 WO2011144292A2 (en) 2010-05-21 2011-04-26 Selectively etching of a carbon nano tubes (cnt) polymer matrix on a plastic substructure

Publications (1)

Publication Number Publication Date
KR20130119332A true KR20130119332A (ko) 2013-10-31

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KR1020127033360A Ceased KR20130119332A (ko) 2010-05-21 2011-04-26 플라스틱 하부구조상의 탄소나노튜브 (cnt) 폴리머 매트릭스의 선택적 식각

Country Status (10)

Country Link
US (1) US8809112B2 (https=)
EP (1) EP2572388B1 (https=)
JP (1) JP5778256B2 (https=)
KR (1) KR20130119332A (https=)
CN (1) CN102893421B (https=)
ES (1) ES2535873T3 (https=)
PH (1) PH12012501869A1 (https=)
SG (1) SG185550A1 (https=)
TW (1) TWI502782B (https=)
WO (1) WO2011144292A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101535386B1 (ko) * 2014-07-09 2015-07-08 노재호 잉크 또는 도료 식각용 식각용액 및 이를 이용한 잉크 또는 도료 패턴의 제조방법
KR20160136910A (ko) * 2015-05-21 2016-11-30 삼성전자주식회사 이차원 물질을 사용한 플렉서블 인터커넥트 레이어를 포함하는 유연소자

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US8999186B2 (en) * 2011-04-28 2015-04-07 Merck Patent Gmbh Selectively etching of a polymer matrix on pet
EP2587564A1 (en) * 2011-10-27 2013-05-01 Merck Patent GmbH Selective etching of a matrix comprising silver nanowires or carbon nanotubes
TWI488943B (zh) * 2013-04-29 2015-06-21 Chi Mei Corp 蝕刻膏組成物及其應用
CN104952717B (zh) * 2014-03-26 2018-04-06 苏州汉纳材料科技有限公司 基于碳材料的透明导电薄膜、其工业化制法及应用
CN106276778B (zh) * 2015-05-21 2018-08-14 清华大学 一种金属纳米线膜的制备方法以及导电元件
US10614928B2 (en) 2017-04-17 2020-04-07 Philippe Hansen-Estruch Biodegradable flexible lightweight energy storage composite and methods of making the same
US11993719B2 (en) 2017-10-27 2024-05-28 National Research Council Of Canada Boron nitride nanotube coated substrates for sintering of metallic traces by intense pulse light
CN110034007B (zh) * 2018-01-12 2021-07-09 东北师范大学 一种实现透明可拉伸电极超高精度图案化的方法
CN113736466B (zh) * 2020-05-29 2023-05-12 新应材股份有限公司 蚀刻剂组合物、增粘剂、移除聚酰亚胺的方法以及蚀刻工艺
TWI751568B (zh) * 2020-05-29 2022-01-01 新應材股份有限公司 蝕刻劑組成物、增黏劑、鹼溶液、移除聚醯亞胺的方法以及蝕刻製程

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US5424054A (en) 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US6221330B1 (en) 1997-08-04 2001-04-24 Hyperion Catalysis International Inc. Process for producing single wall nanotubes using unsupported metal catalysts
KR100376768B1 (ko) 2000-08-23 2003-03-19 한국과학기술연구원 전자, 스핀 및 광소자 응용을 위한 탄소나노튜브의 선택적 수평성장 방법
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
DE10333704B4 (de) * 2003-07-23 2009-12-17 Ovd Kinegram Ag Sicherheitselement zur RF-Identifikation
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JP2005327965A (ja) 2004-05-17 2005-11-24 Shachihata Inc 光起電力装置
TWI241414B (en) * 2004-07-23 2005-10-11 Ind Tech Res Inst Carbon nanotubes as probes of MEMS devices and manufacturing method thereof
WO2008051205A2 (en) 2005-10-14 2008-05-02 Eikos, Inc. Carbon nanotube use in solar cell applications
US7927666B2 (en) * 2006-06-30 2011-04-19 The University Of Akron Aligned carbon nanotube-polymer materials, systems and methods
JP5020591B2 (ja) * 2006-09-29 2012-09-05 鶴見曹達株式会社 導電性高分子用エッチング液および導電性高分子をパターニングする方法
DE102006051952A1 (de) * 2006-11-01 2008-05-08 Merck Patent Gmbh Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten
KR100883737B1 (ko) * 2007-01-17 2009-02-12 삼성전자주식회사 망상 탄소나노튜브 박막층을 포함하는 탄소나노튜브 투명전극 및 그의 제조방법
US8445385B2 (en) 2008-04-11 2013-05-21 Sandisk 3D Llc Methods for etching carbon nano-tube films for use in non-volatile memories
CN101276789B (zh) * 2008-05-07 2011-08-17 李毅 一种非晶硅太阳能电池铝膜蚀刻方法及蚀刻油墨
WO2010010838A1 (ja) * 2008-07-25 2010-01-28 コニカミノルタホールディングス株式会社 透明電極および透明電極の製造方法
TWI452011B (zh) * 2010-01-20 2014-09-11 鴻海精密工業股份有限公司 碳奈米管裝置製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101535386B1 (ko) * 2014-07-09 2015-07-08 노재호 잉크 또는 도료 식각용 식각용액 및 이를 이용한 잉크 또는 도료 패턴의 제조방법
KR20160136910A (ko) * 2015-05-21 2016-11-30 삼성전자주식회사 이차원 물질을 사용한 플렉서블 인터커넥트 레이어를 포함하는 유연소자

Also Published As

Publication number Publication date
EP2572388A2 (en) 2013-03-27
SG185550A1 (en) 2012-12-28
TWI502782B (zh) 2015-10-01
CN102893421A (zh) 2013-01-23
ES2535873T3 (es) 2015-05-18
WO2011144292A3 (en) 2012-01-26
EP2572388B1 (en) 2015-01-07
JP5778256B2 (ja) 2015-09-16
CN102893421B (zh) 2016-01-20
TW201228065A (en) 2012-07-01
US20130065359A1 (en) 2013-03-14
JP2013527612A (ja) 2013-06-27
WO2011144292A2 (en) 2011-11-24
US8809112B2 (en) 2014-08-19
PH12012501869A1 (en) 2013-01-07

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