ES2137973T3 - Litografia por haz de electrones con acumulacion reducida de cargas. - Google Patents
Litografia por haz de electrones con acumulacion reducida de cargas.Info
- Publication number
- ES2137973T3 ES2137973T3 ES93309768T ES93309768T ES2137973T3 ES 2137973 T3 ES2137973 T3 ES 2137973T3 ES 93309768 T ES93309768 T ES 93309768T ES 93309768 T ES93309768 T ES 93309768T ES 2137973 T3 ES2137973 T3 ES 2137973T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- electron beam
- pva
- thickness
- resistant layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Formation Of Insulating Films (AREA)
Abstract
SE USA UN HAZ DE ELECTRONES DE ESCRITURA DIRECTA PARA DEFINIR CARACTERISTICAS EN UNA CAPA RESISTENTE (11) Y ASI ULTIMAMENTE EN UNA PIEZA DE TRABAJO SUBYACENTE (10), TAL COMO UN SUSTRATO DE ENMASCARAMIENTO DE DESPLAZAMIENTO DE FASE O UNA PASTILLA DE CIRCUITO INTEGRADO SEMICONDUCTORA. LA CAPA RESISTENTE SE SITUA SOBRE UNA SUPERFICIE PRINCIPAL SUPERIOR DE LA PIEZA DE TRABAJO. EN UNA REALIZACION PREFERIDA, LA CAPA RESISTENTE (11) SE SITUA POR DEBAJO DE UNA CAPA PROTECTORA (12) DE ALCOHOL DE POLIVINILO ("PVA"); Y UNA CAPA CONDUCTORA DE TOMA DE TIERRA (13), TAL COMO UNA CAPA ORGANICA CONDUCTORA, SE SITUA SOBRE LA CAPA PROTECTORA (12). DESPUES DE EXPONER LA SUPERFICIE PRINCIPAL SUPERIOR DE LA ESTRUCTURA RESULTANTE AL HAZ DE ELECTRONES DIBUJADO DE ESCRITURA DIRECTA, SE LLEVAN A CABO LOS SIGUIENTES PASOS: (1) EL ATAQUE AL ACIDO DE PLASMA ELIMINA COMPLETAMENTE EL ESPESOR ENTERO DE LA CAPA CONDUCTORA ASI COMO UNA PEQUEÑA FRACCION DEL ESPESOR DE LA CAPA PVA; (2) LA CAPA PVA SE ELIMINA COMPLETAMENTE DISOLVIENDOLA EN AGUA; (3) OTRO ATAQUE AL ACIDO DE PLASMA ELIMINA UNA PEQUEÑA FRACCION DEL ESPESOR DE LA CAPA RESISTENTE, INCLUIDO CUALQUIER RESIDUO NO DESEADO; Y (4) SE DESARROLLA LA CAPA RESISTENTE.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US99386692A | 1992-12-23 | 1992-12-23 | |
| US08/025,714 US5288368A (en) | 1992-12-23 | 1993-03-02 | Electron beam lithography with reduced charging effects |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2137973T3 true ES2137973T3 (es) | 2000-01-01 |
Family
ID=26700079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES93309768T Expired - Lifetime ES2137973T3 (es) | 1992-12-23 | 1993-12-06 | Litografia por haz de electrones con acumulacion reducida de cargas. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5288368A (es) |
| EP (1) | EP0604054B1 (es) |
| JP (1) | JP2883798B2 (es) |
| KR (1) | KR0166094B1 (es) |
| CA (1) | CA2103411C (es) |
| DE (1) | DE69326224T2 (es) |
| ES (1) | ES2137973T3 (es) |
| SG (1) | SG44456A1 (es) |
| TW (1) | TW337032B (es) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100380546B1 (ko) * | 1994-02-24 | 2003-06-25 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체집적회로장치의제조방법 |
| DE19630705A1 (de) | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Verfahren zur Herstellung von 3-dimensional strukturierten Polymerschichten für die integrierte Optik |
| JP2001519040A (ja) * | 1995-08-30 | 2001-10-16 | ドイッチェ テレコム アーゲー | 三次元表面の構造化におけるコントラストを向上させる方法 |
| JPH11145046A (ja) * | 1997-11-13 | 1999-05-28 | Nec Corp | 半導体デバイスの製造方法 |
| JP3456461B2 (ja) * | 2000-02-21 | 2003-10-14 | Ｔｄｋ株式会社 | パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法 |
| US6586158B2 (en) | 2001-05-25 | 2003-07-01 | The United States Of America As Represented By The Secretary Of The Navy | Anti-charging layer for beam lithography and mask fabrication |
| US6894294B2 (en) * | 2002-09-10 | 2005-05-17 | Applied Materials Israel, Ltd. | System and method for reducing charged particle contamination |
| KR100625615B1 (ko) | 2004-06-29 | 2006-09-20 | 이상훈 | 마이크로 밸브 제조 방법 |
| US7538295B2 (en) * | 2005-04-21 | 2009-05-26 | Hewlett-Packard Development Company, L.P. | Laser welding system |
| JP2010153641A (ja) * | 2008-12-25 | 2010-07-08 | Nuflare Technology Inc | 基板処理方法 |
| US9460887B2 (en) * | 2009-05-18 | 2016-10-04 | Hermes Microvision, Inc. | Discharging method for charged particle beam imaging |
| JP5368392B2 (ja) | 2010-07-23 | 2013-12-18 | 信越化学工業株式会社 | 電子線用レジスト膜及び有機導電性膜が積層された被加工基板、該被加工基板の製造方法、及びレジストパターンの形成方法 |
| JP6621947B2 (ja) * | 2019-01-17 | 2019-12-18 | Hoya株式会社 | レジスト膜付きマスクブランクおよびその製造方法ならびに転写用マスクの製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443681A (en) * | 1977-09-13 | 1979-04-06 | Mitsubishi Electric Corp | Electron beam light-exposing method |
| JPS54116883A (en) * | 1978-03-02 | 1979-09-11 | Mitsubishi Electric Corp | Electron beam exposure method |
| JPS58113925A (ja) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | 電子ビ−ム描画用レジスト |
| JPH0795509B2 (ja) * | 1987-04-10 | 1995-10-11 | 松下電子工業株式会社 | レジストパタ−ンの形成方法 |
| DE69021119T2 (de) * | 1989-04-28 | 1995-12-21 | Fujitsu Ltd | Bildherstellungsverfahren mittels einer elektrisch leitfähigen Zusammensetzung. |
| JP2902727B2 (ja) * | 1990-05-30 | 1999-06-07 | 株式会社日立製作所 | 荷電粒子線照射方法及び観察方法 |
| US5244759A (en) * | 1991-02-27 | 1993-09-14 | At&T Bell Laboratories | Single-alignment-level lithographic technique for achieving self-aligned features |
-
1993
- 1993-03-02 US US08/025,714 patent/US5288368A/en not_active Expired - Fee Related
- 1993-05-27 TW TW082104202A patent/TW337032B/zh active
- 1993-11-18 CA CA002103411A patent/CA2103411C/en not_active Expired - Fee Related
- 1993-12-06 EP EP93309768A patent/EP0604054B1/en not_active Expired - Lifetime
- 1993-12-06 DE DE69326224T patent/DE69326224T2/de not_active Expired - Fee Related
- 1993-12-06 ES ES93309768T patent/ES2137973T3/es not_active Expired - Lifetime
- 1993-12-06 SG SG1996000569A patent/SG44456A1/en unknown
- 1993-12-17 JP JP5343225A patent/JP2883798B2/ja not_active Expired - Lifetime
- 1993-12-22 KR KR1019930028973A patent/KR0166094B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2883798B2 (ja) | 1999-04-19 |
| SG44456A1 (en) | 1997-12-19 |
| DE69326224T2 (de) | 2000-04-13 |
| KR940016476A (ko) | 1994-07-23 |
| JPH07176470A (ja) | 1995-07-14 |
| EP0604054A1 (en) | 1994-06-29 |
| KR0166094B1 (ko) | 1999-02-01 |
| CA2103411A1 (en) | 1994-06-24 |
| TW337032B (en) | 1998-07-21 |
| EP0604054B1 (en) | 1999-09-01 |
| US5288368A (en) | 1994-02-22 |
| CA2103411C (en) | 1998-09-15 |
| DE69326224D1 (de) | 1999-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES2137973T3 (es) | Litografia por haz de electrones con acumulacion reducida de cargas. | |
| KR970076040A (ko) | 액티브 매트릭스 액정표시장치의 제조방법 및 액티브 매트릭스 액정표시장치 | |
| EP0903637A3 (en) | Electron beam resist | |
| MX9305898A (es) | Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados. | |
| JPS54105962A (en) | Projection electrode forming method for semiconductor device | |
| JPS54116883A (en) | Electron beam exposure method | |
| KR980005930A (ko) | 반도체장치 및 그 제조방법 | |
| KR20010003747A (ko) | 유기 전계발광 표시소자의 제조방법 | |
| JPS5452992A (en) | Diode and its manufacture | |
| ES2091215T3 (es) | Elemento fotosensible electrofotografico y procedimiento para su produccion. | |
| JPS54109719A (en) | Manufacture of face plate for image pickup tube | |
| JPS5357775A (en) | Semiconductor ingegrated circuit device | |
| JPS54136173A (en) | Semiconductor device | |
| JPS56152266A (en) | Photo-firing thyristor | |
| JPS5541721A (en) | Carrier tape for semiconductor device | |
| JPS5539647A (en) | Ion etching | |
| JPS6417064A (en) | Photosensitive body | |
| TW286469B (en) | Process for production of copper through-hole PWB | |
| JPS5534661A (en) | Manufacture of etching plate | |
| JPS5576549A (en) | Gas discharge display panel | |
| JPS53106574A (en) | Production of photoetching mask for production of semiconductor device | |
| JPS5340290A (en) | Semiconductor device | |
| JPS55124229A (en) | Manufacturing of semiconductor device | |
| JPS57211143A (en) | Formation of micropattern | |
| JPS57162445A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
Ref document number: 604054 Country of ref document: ES |