MX9305898A - Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados. - Google Patents

Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados.

Info

Publication number
MX9305898A
MX9305898A MX9305898A MX9305898A MX9305898A MX 9305898 A MX9305898 A MX 9305898A MX 9305898 A MX9305898 A MX 9305898A MX 9305898 A MX9305898 A MX 9305898A MX 9305898 A MX9305898 A MX 9305898A
Authority
MX
Mexico
Prior art keywords
passivant
engraving
portions
etch
illuminated
Prior art date
Application number
MX9305898A
Other languages
English (en)
Inventor
Monte A Douglas
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of MX9305898A publication Critical patent/MX9305898A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Un grabado fotoquímico en fase líquida, anisótropo, es efectuadosumergiendo un substrato 30 (por ejemplo de cobre) en un líquido 34 quetiene un ácido para grabar (pro ejemplo ácido clorhídrico) y un pasivante(por ejemplo yodo), el pasivante forma una capa de pasivación 36 insoluble(por ejemplo CuI) sobre la superficie, evitando que el ácido para grabar,ataque o grabe la superficie. El pasivante y su concentración se eligende tal modo que la capa de pasivación 36 tenga una solubilidad la cual esincrementada sustancialmente cuando la misma es iluminada con radiación 38(por ejemplo una luz visible/ultravioleta). Las porciones de la superficieson iluminadas entonces con la radiación 38, por medio de lo cual la capade pasivación 36 es removida o eliminada de aquéllas porciones iluminadasde la superficie, permitiendo que el grabado proceda allí. Las porcionesde la superficie no iluminada, no son grabadas, conduciendo a un grabadoanisótropo. Preferiblemente, un enmascaramiento 32 para el grabado, esutilizado para crear las áreas no iluminadas. Este enmascaramiento 32para el grabado, puede ser formado sobre la superficie o él mismo puedeestar interpuesto entre la superficie y la fuente de radiación.
MX9305898A 1992-10-30 1993-09-24 Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados. MX9305898A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US95413192A 1992-10-30 1992-10-30

Publications (1)

Publication Number Publication Date
MX9305898A true MX9305898A (es) 1995-01-31

Family

ID=25494971

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9305898A MX9305898A (es) 1992-10-30 1993-09-24 Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados.

Country Status (5)

Country Link
US (1) US5460687A (es)
EP (1) EP0595053A3 (es)
JP (1) JPH06204204A (es)
KR (1) KR940008010A (es)
MX (1) MX9305898A (es)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5746930A (en) * 1995-01-03 1998-05-05 Texas Instruments Incorporated Method and structure for forming an array of thermal sensors
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5847390A (en) * 1996-04-09 1998-12-08 Texas Instruments Incorporated Reduced stress electrode for focal plane array of thermal imaging system and method
EP0938597B1 (en) 1996-09-06 2003-08-20 Obducat Aktiebolag Method for anisotropic etching of structures in conducting materials
US5971527A (en) * 1996-10-29 1999-10-26 Xerox Corporation Ink jet channel wafer for a thermal ink jet printhead
US6080987A (en) * 1997-10-28 2000-06-27 Raytheon Company Infrared-sensitive conductive-polymer coating
US6083557A (en) * 1997-10-28 2000-07-04 Raytheon Company System and method for making a conductive polymer coating
JP4498601B2 (ja) * 1998-03-05 2010-07-07 オブデュキャット、アクチボラグ エッチング方法
JP4698024B2 (ja) * 1998-07-23 2011-06-08 サーフィス テクノロジー システムズ ピーエルシー 異方性エッチングのための方法と装置
US6136210A (en) * 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing
US6358430B1 (en) * 1999-07-28 2002-03-19 Motorola, Inc. Technique for etching oxides and/or insulators
US6884740B2 (en) * 2001-09-04 2005-04-26 The Regents Of The University Of California Photoelectrochemical undercut etching of semiconductor material
SG121697A1 (en) * 2001-10-25 2006-05-26 Inst Data Storage A method of patterning a substrate
KR100561005B1 (ko) * 2003-12-30 2006-03-16 동부아남반도체 주식회사 반도체 소자의 제조 방법
US7323699B2 (en) * 2005-02-02 2008-01-29 Rave, Llc Apparatus and method for modifying an object
US20060207890A1 (en) 2005-03-15 2006-09-21 Norbert Staud Electrochemical etching
US7569490B2 (en) 2005-03-15 2009-08-04 Wd Media, Inc. Electrochemical etching
JP4608613B2 (ja) * 2005-04-22 2011-01-12 国立大学法人九州工業大学 レーザー照射微細加工方法
DE102006022722B4 (de) 2006-05-12 2010-06-17 Hueck Engraving Gmbh & Co. Kg Verfahren und Vorrichtung zur Oberflächenstrukturierung eines Pressbleches oder eines Endlosbandes
DE102019127776A1 (de) * 2019-08-14 2021-03-04 Vacuumschmelze Gmbh & Co. Kg Amorphes Metallband und Verfahren zum Herstellen eines amorphen Metallbands
EP3890457A1 (en) * 2020-03-30 2021-10-06 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Anisotropic etching using photosensitive compound

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE687248A (es) * 1966-09-22 1967-03-22
US3489564A (en) * 1967-05-29 1970-01-13 Gen Electric Photolytic etching of silicon dioxide
US3762325A (en) * 1967-11-27 1973-10-02 Teeg Research Inc Electromagnetic radiation sensitive lithographic plates
US4518456A (en) * 1983-03-11 1985-05-21 At&T Bell Laboratories Light induced etching of InP by aqueous solutions of H3 PO4
US4838989A (en) * 1987-08-25 1989-06-13 The United States Of America As Represented By The United States Department Of Energy Laser-driven fusion etching process
US4861421A (en) * 1988-06-01 1989-08-29 Texas Instruments Incorporated Photochemical semiconductor etching
EP0433983B1 (en) * 1989-12-20 1998-03-04 Texas Instruments Incorporated Copper etch process using halides
IL98660A (en) * 1991-06-28 1996-10-16 Orbotech Ltd Method of printing an image on a substrate particularly useful for producing printed circuit boards
US5201989A (en) * 1992-04-20 1993-04-13 Texas Instruments Incorporated Anisotropic niobium pentoxide etch
US5279702A (en) * 1992-09-30 1994-01-18 Texas Instruments Incorporated Anisotropic liquid phase photochemical copper etch

Also Published As

Publication number Publication date
US5460687A (en) 1995-10-24
KR940008010A (ko) 1994-04-28
EP0595053A2 (en) 1994-05-04
JPH06204204A (ja) 1994-07-22
EP0595053A3 (en) 1995-03-22

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