KR920010868A - 금속배선 형성방법 - Google Patents

금속배선 형성방법 Download PDF

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Publication number
KR920010868A
KR920010868A KR1019900018351A KR900018351A KR920010868A KR 920010868 A KR920010868 A KR 920010868A KR 1019900018351 A KR1019900018351 A KR 1019900018351A KR 900018351 A KR900018351 A KR 900018351A KR 920010868 A KR920010868 A KR 920010868A
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KR
South Korea
Prior art keywords
metal wiring
oxide film
forming
aluminum oxide
damage
Prior art date
Application number
KR1019900018351A
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English (en)
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KR0121862B1 (ko
Inventor
김준식
Original Assignee
문정환
금속일렉트론 주식회사
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Application filed by 문정환, 금속일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900018351A priority Critical patent/KR0121862B1/ko
Publication of KR920010868A publication Critical patent/KR920010868A/ko
Application granted granted Critical
Publication of KR0121862B1 publication Critical patent/KR0121862B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

금속배선 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도(a)∼(g)는 본 발명에 따른 금속 배선 형성 공정도.

Claims (4)

  1. 반도체 소자의 금속 배선을 형성함에 있어서, 알루미늄 합금의 패턴 형성에 이어 표면에 약간의 손상을 가하후 고온의 순수에 넣어 알루미늄 산화막을 형성시키고, 보호막 형성 및 패드식각후 패드부분의 알루미늄 산화막을 제거하는 것을 특징으로 하는 금속 배선형성 방법.
  2. 제1항에 있어서, 알루미늄 합금의 패턴 형성에 이은 표면의 손상은 아르곤 빔을 이용함을 특징으로 하는 금속 배선 형성방법.
  3. 제1항에 있어서, 알루미늄 산화막의 두께는 1000∼5000Å으로 함을 특징으로 하는 금속배선 형성방법.
  4. 제1항 또는 제3항에 있어서, 알루미늄 산화막은 아르곤 빔에 의한 손상후 50∼80℃의 고온 순수에서 형성함을 특징으로 하는 금속 배선 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018351A 1990-11-13 1990-11-13 금속배선 형성방법 KR0121862B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900018351A KR0121862B1 (ko) 1990-11-13 1990-11-13 금속배선 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900018351A KR0121862B1 (ko) 1990-11-13 1990-11-13 금속배선 형성방법

Publications (2)

Publication Number Publication Date
KR920010868A true KR920010868A (ko) 1992-06-27
KR0121862B1 KR0121862B1 (ko) 1997-11-11

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ID=19305972

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018351A KR0121862B1 (ko) 1990-11-13 1990-11-13 금속배선 형성방법

Country Status (1)

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KR (1) KR0121862B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430579B1 (ko) * 2001-06-27 2004-05-10 동부전자 주식회사 반도체 소자용 금속 배선의 후처리 방법
KR200451992Y1 (ko) * 2008-11-26 2011-01-25 김진완 투수 패드를 구비한 보도블럭용 포석 케이스

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430579B1 (ko) * 2001-06-27 2004-05-10 동부전자 주식회사 반도체 소자용 금속 배선의 후처리 방법
KR200451992Y1 (ko) * 2008-11-26 2011-01-25 김진완 투수 패드를 구비한 보도블럭용 포석 케이스

Also Published As

Publication number Publication date
KR0121862B1 (ko) 1997-11-11

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