KR960026259A - 반도체 소자의 금속층 형성방법 - Google Patents
반도체 소자의 금속층 형성방법 Download PDFInfo
- Publication number
- KR960026259A KR960026259A KR1019940034572A KR19940034572A KR960026259A KR 960026259 A KR960026259 A KR 960026259A KR 1019940034572 A KR1019940034572 A KR 1019940034572A KR 19940034572 A KR19940034572 A KR 19940034572A KR 960026259 A KR960026259 A KR 960026259A
- Authority
- KR
- South Korea
- Prior art keywords
- metal layer
- formation method
- semiconductor device
- forming
- layer formation
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 9
- 239000002184 metal Substances 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000006117 anti-reflective coating Substances 0.000 claims 4
- 238000002310 reflectometry Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도페 소자의 금속층 형성방법에 관한 것으로, 스퍼터링 공정에 의해 형성된 금속막의 상부에 CDV 공정에 의해 ARC 알루미늄층을 형성시키므로써 마스크작업시 난 반사에 의한 메탈 네킹(Metal Necking) 현상을 방지할 수 있는 반도체 소자의 금속층 형성방법에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 반도체 소자의 금속층 형성방법을 설명하기 위한 단면도.
Claims (4)
- 반도체 소자의 금속층 형성방법에 있어서, 금속패턴을 형성하기 위한 금속층의 상부에 앤티 리플렉티브 코팅 알루미늄층을 형성하는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.
- 제1항에 있어서, 상기 앤티 리플렉스티브 코팅 알루미늄층은 CVD 공정에 의해 형성되는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.
- 제2항에 있어서, 상기 앤티 리플렉티브 코팅 알루미늄층은 온도 200~400℃ 압력 1.0~7.0Torr 조건하에서 형성되는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.
- 제1항에 있어서, 상기 앤티 리플렉스 코팅 알루미늄층은 그 반사도가 120~140%가 되도록 형성되는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940034572A KR0150185B1 (ko) | 1994-12-16 | 1994-12-16 | 반도체 소자의 금속층 형성방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940034572A KR0150185B1 (ko) | 1994-12-16 | 1994-12-16 | 반도체 소자의 금속층 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960026259A true KR960026259A (ko) | 1996-07-22 |
KR0150185B1 KR0150185B1 (ko) | 1998-12-01 |
Family
ID=19401798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940034572A KR0150185B1 (ko) | 1994-12-16 | 1994-12-16 | 반도체 소자의 금속층 형성방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0150185B1 (ko) |
-
1994
- 1994-12-16 KR KR1019940034572A patent/KR0150185B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0150185B1 (ko) | 1998-12-01 |
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