EP3105784A1 - Procédé de montage d'un composant électrique en utilisant un capot et capot adapté pour être employé dans ce procédé - Google Patents
Procédé de montage d'un composant électrique en utilisant un capot et capot adapté pour être employé dans ce procédéInfo
- Publication number
- EP3105784A1 EP3105784A1 EP15715699.3A EP15715699A EP3105784A1 EP 3105784 A1 EP3105784 A1 EP 3105784A1 EP 15715699 A EP15715699 A EP 15715699A EP 3105784 A1 EP3105784 A1 EP 3105784A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- hood
- substrate
- component
- joining
- contacting structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 70
- 238000005304 joining Methods 0.000 claims abstract description 57
- 239000012782 phase change material Substances 0.000 claims description 10
- 238000010276 construction Methods 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 229920001169 thermoplastic Polymers 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 239000004416 thermosoftening plastic Substances 0.000 abstract description 3
- 229920002994 synthetic fiber Polymers 0.000 abstract 1
- 239000000945 filler Substances 0.000 description 16
- 238000005245 sintering Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910008433 SnCU Inorganic materials 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000012815 thermoplastic material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910017770 Cu—Ag Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- -1 Polyethylene terephthalate Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020882 Sn-Cu-Ni Inorganic materials 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 229910006414 SnNi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910000743 fusible alloy Inorganic materials 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XEOCKQIQXJNTER-UHFFFAOYSA-N gold palladium platinum Chemical compound [Pd].[Pd].[Pd].[Pd].[Pd].[Pt].[Pt].[Pt].[Pt].[Pt].[Pt].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au].[Au] XEOCKQIQXJNTER-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29116—Lead [Pb] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/40227—Connecting the strap to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
- H01L2924/164—Material
- H01L2924/165—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/1679—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
Definitions
- the invention relates to a method for mounting an electrical component on a substrate, wherein the component has a bottom side facing the substrate and a top side opposite thereto.
- the bottom of the device is mechanically connected to the assembly available through the substrate.
- the upper side of the component is then mechanically connected to a contacting structure.
- the joint connections that arise during joining lie in at least two different levels.
- the invention relates to a hood for an electrical assembly, wherein the assembly comprises a substrate and at least one mounted on this component.
- the hood has a support surface with which it can be placed on the substrate.
- the hood has a cavity in which the component can be accommodated.
- the device has contacts both at its top and at its bottom, with which it is mounted on the substrate. These contacts are thus at different levels.
- the levels of friction are defined by the contacts of electronic components being mounted on a substrate and contacting in different planes, the term level being meant here in the technical rather than the mathematical sense.
- a plane or also the associated level of levelness defines areas in which certain electrical or other mechanical connections of the components to be contacted are located. Due to the arrangement of components one above the other, the levels are preferably Fügelevel also one above the other, in particular in parallel alignment with each other.
- a power module can be formed, in which the electronic hobauele- elements can be connected via a sintered layer to the substrate.
- the substrate may be DCB ceramic substrates commonly used in power electronics (DCB stands for Direct Copper Bond).
- DCB Direct Copper Bond
- the tops of the power components can be connected with a sintered layer, for example, to an additional heat capacity, which provides a heat sink available.
- the substrate can be connected with its underside via a sintered layer with another heat sink.
- the sintered connections of electronic assemblies can be manufactured with the aid of special tools. These tools have pressure surfaces which contact the components to be sintered, so that a pressure can be exerted on them during the sintering treatment.
- Tolerance compensation in the tool can ensure that the applied pressure is uniform even when the assembly to be sintered has tolerances due to manufacturing inaccuracies.
- the sintering treatment in addition to the pressure build-up, reaching a certain sintering temperature over a defined period of time is required. Instead of sintered connections can also be used.
- a contacting of these components with the substrate usually has to take place via suitable contacting structures.
- contacts lying on the upper side of the component are connected to corresponding contacts on the substrate.
- metallic lead structures can be used, which may for example be part of a lead frame.
- the appropriately bent lead structures are preferably connected by sintering or soldering with the respective contact surfaces.
- Another possibility is to provide the contacting structures by means of flex films on which the conductive structure is for example printed.
- the flex foils can also be connected by means of sintered connections to the relevant contact surfaces of the upper side of the component and to the mounting side of the substrate.
- the assembly of power electronic assemblies means Sintered connections in comparison, for example, for soldering at the time a certain overhead in the production.
- the object of the invention is to provide a method for mounting an electrical component on a substrate, wherein this is simplified and also allows the assembly of power electronic components. Furthermore, the object is to provide a hood of the type specified, which can be used in this improved method.
- the contacting structure is integrated in the form of guide paths in a hood.
- This hood is made of a thermally softenable or thermally curable material.
- the hood is first placed on the mounting side of the substrate.
- the hood spans the component (or several components).
- the contact surfaces of the contacting structure with the substrate lie within a first level of furring, which is provided by the mounting side of the substrate. With these contact surfaces, the substrate is electrically connected.
- On the inside of the hood there are further contact surfaces of the Kunststofftechniksstruk- tur, which reach within a second Fügelevels at the level of the top of the device with there located contacts of the device in engagement.
- the contacting structure creates an electrical connection between the contact surfaces on the substrate and the contact surfaces on the upper side of the component, wherein the two Fügelevel be bridged.
- the material of the hood during assembly at least in the softening region (in the case of the existence of the hood of a thermally softenable material) or in the curing area (in the case of the existence of the hood of a thermally curable material) is heated.
- the softening area or the curing area is characterized by a temperature range in which the softening takes place in the dimensions permissible for the assembly process or the hardening of the material.
- the substrate, the component and the hood with the contacting structure are first placed in relation to each other in the configuration to be produced. Only then should the joining compounds, in particular electrical connections, be completed on the component within the at least two levels in one and the same operation by increasing the temperature or increasing the temperature and pressure.
- the method for mounting the electronic module on the substrate is to take place in two defined process sections. In the first process section, all components to be assembled of the assembly provided by the substrate are placed relative to one another. This also leads to the formation of the joint connections, which are not yet completed. In the second production phase, the joints are completed.
- a suitable joining method is necessary, depending on the type of mechanical connections to be made a temperature increase (for example, during soldering) or a temperature and pressure increase (for example, in diffusion soldering or sintering) is required. It is advantageously provided that these joint connections are produced in one operation. you can. For this purpose, it is necessary to design all joints to be produced on the process parameters set in this single operation. Here, a certain temperature level is reached. In addition, at least a portion of the compounds additionally pressure can be exercised.
- the particular type of connection and possibly necessary additional material do not necessarily have to be exactly the same for all joint connections. All that is essential is that the process parameters for all types of connection and materials are matched to one another and in this way the simultaneous formation of all joints in a single operation is possible.
- the bottom of the device is within a first Fügelevels, which is provided by a mounting side of the substrate and the top of the device is within a second Fügelevels.
- the first level of skimming is defined by the plane that is usually provided by the substrate.
- This level (which in the case of non-flat substrates, such as housings, for example, does not necessarily have to be flat in the mathematical sense) lies the group of electrical connections with which the underside of the electrical components on the substrate is contacted in each case.
- the top of the components then defines, if they have electrical contact surfaces, a second Fügelevel, by the spatial height extent of the electrical components of the first Fügelevel
- the second level Fügel is not in a plane, the sum of all contact surfaces on the respective top of components this Fü- level defined.
- each level of the stack results in further levels of conduction, which possibly have to be bridged by appropriate contact structures during electrical connection.
- the arrangement of the electrical components such that their contacts can be assigned in each case to different pad levels advantageously facilitates the assembly of the electrical module, in which the components and contact structures can be preassembled level by level (ie, can be placed relative to one another), in order subsequently to connect the modules preferably to produce electrical connections in all levels Fügeleveln in one operation.
- the softening or curing of the hood and the completion of the joints in one and the same operation is carried out under the same conditions.
- the temperature range of the softening area or hardening area at least overlaps with the temperature range for the completion of the joining connections. In this case, a temperature can be found for the assembly, at the same time the completion of the joints and the hardening or softening of
- Hood can take place.
- the hardening or softening of the hood and the completion of the joint connections can also be carried out successively in the same operation.
- the material of the hood of a plastic deformation must oppose a sufficient resistance, so that possibly at the completion of the joint connection, a pressure can be built up, which may be required in the case of the production of sintered connections or Diffusionslöteducationen to the electrical contacts.
- This pressure can be built up by simultaneously contributing, during plastic deformation, a proportion of elastic deformation in the mold Material of the hood is created.
- Silver sintered paste e.g., Heraeus mAgic Paste, Microbond ASP series
- Material system SnCu, SnAg, SnNi and other material systems that can form refractory intermetallic phases may be used, such as
- Single ply systems with refractory particles e.g., Cu
- refractory particles e.g., Cu
- low melting alloys such as SnCu
- the low melting filler e.g., refractory Cu followed by SnCu alloy
- Prepreg material eg Isola Duraver-E-Cu quality 104 ML
- Thermally softenable hood material eg Isola Duraver-E-Cu quality 104 ML
- thermoplastic materials such as thermoplastic materials
- PET Polyethylene terephthalate
- PEEK Polyetheretherketones
- PPA polyphthalamides
- the substrate with its side facing away from the mounting side provides a contact surface
- a third level is provided.
- a component is placed.
- a connection between the component and the substrate in exactly the operation by a temperature increase or a temperature and pressure increase completed, in which the joints on the electrical component in the first Fuellevel and the second Fügelevel (and possibly further Fill levels).
- the component which is mounted on the back of the substrate, may be, for example, a heat sink, which is used in power electronic assemblies to dissipate the heat loss.
- This heat sink can also be designed as a base body, wherein this is available for common assembly of several electronic assemblies available.
- Another possibility is to equip the substrate with electrical components on both sides. In this case, cooling could take place, for example, through cooling channels in the substrate.
- all joint connections are completed with one and the same joining method.
- the condition must be fulfilled that the various selected joining methods can be carried out under the given process conditions (pressure, temperature).
- the temperature must be the same over the entire electrical assembly to be mounted.
- the pressure can vary, for example, by using a plurality of joining tools or a joining tool is provided, in which, for example, by Spring mechanisms with different spring stiffness different manufacturing pressures are applied to different components of the mating Auf from. Even in the event that all joint connections are completed with one and the same joining method, these conditions apply.
- the same filler material can also be selected, so that the production conditions for the joining method are uniform for the entire assembly. But it is also possible to select different filler materials, as far as they can be completed in the manner explained above under the predetermined joining conditions.
- the explained advantages can also be extended to the joining of the connection between the component and the substrate, which can be completed in one operation together with the joining connections on the mounting side of the substrate.
- the connections on the back side of the substrate can also be electrical connections if the component which is mounted there is an electrical component.
- Yet another embodiment of the invention provides that a diffusion soldering or sintering is used as the joining method.
- Diffusion soldering has a process related to sintering.
- An additional material is introduced into the area between the components to be joined, whereby the latter, under the influence of temperature and optionally elevated pressure, leads to a diffusion of low-melting and high-melting contributes to the alloying components.
- These local changes in concentration occur in the joining zone and at their interfaces to the adjacent components for generating high-melting intermetallic phases, which have a high temperature stability.
- the resulting compound has very high electrical and thermal conductivities as well as high mechanical strengths.
- a filler material is applied to the substrate and / or the component and / or the contacting structure in the hood and / or the component before placing it in the configuration to be produced.
- these filler materials can facilitate joining, for example, sintering or diffusion soldering.
- the connection components responsible for the sintering processes or diffusion processes can also be contained in the contact surfaces for the compound to be formed. In classical soldering, however, a filler material is always required as filler material.
- a flat surface allows the simple placement of a joining tool, with which the pressure on the assembly to be mounted can be exercised. Incidentally, this tool can also provide the required process heat when it is heated. The transfer of process heat to the components to be joined, in particular the hood, is also improved if a flat surface is available, which extends in particular over the entire surface extent of the hood. Another advantage is that the joining tool does not have to be geometrically adapted to the hood.
- the joining tool can be equipped as standard with a flat surface for applying pressure, with basically hoods of different application cases, thus, for example, with different size or with different structuring of the inside, can be mounted with one and the same joining tool.
- a prepreg is used as the hardenable material. These materials can be obtained as semi-finished products and in this way make hoods of different structure without great manufacturing effort.
- prepreg composite materials of fibers and a matrix of not completely cured, preferably thermosetting, resin understood. However, the resin may be partially cured to improve the mechanical stability and processing characteristics of the prepreg. Final curing then takes place, as already explained, during the assembly of the hood.
- hood prepregs from Isola Duraver-E-Cu, for example, can be used. These are then cut to size and layered to form a layered three-dimensional structure.
- the contacting structure can likewise be formed from layer material, for example metal foils, or else a leadframe. These metallic structures are then integrated into the layer composite and embedded in the latter by the hardening of the hood material.
- phase change material also called phase change material
- phase change materials are materials whose latent heat of fusion, solution heat or heat of absorption is greater than the heat that can store these materials due to their specific heat capacity, ie without phase change effect. With regard to their phase change behavior, these materials are selected such that this phase change is achieved in the planned operation of the electronic module, at least in certain operating states. In this way, it is possible to ensure be made that the hood, for example, provides a cooling reserve available in the overload operation of power electronic components by a phase change of the phase change material is forced by the heating.
- phase change material can therefore not form the hood alone, but must be incorporated into another material of the hood. For example, this could take the form of a pad filled with the phase change material, this being embedded in the remaining material of the hood.
- the phase change material can be used during assembly due to a presence in the liquid phase as tolerance compensation and can be plastically deformed in this state. Therefore, the assembly process can benefit from the use of the phase change material, even if their properties are mainly important for the later operation of the assembly.
- the invention is further achieved with the hood mentioned above according to the invention in that a contacting structure is integrated in the form of guide paths in a hood.
- the hood itself consists of a thermally softenable or thermally curable material.
- the contacting structure on the inside of the hood has contact surfaces which serve for electrical connection to the substrate and to the component.
- the contacting structure extends on the inside of the hood, wherein this extends such that the contact surfaces are arranged at different levels, which define the Fügelevel in the subsequent assembly. As already explained, one of these levels is provided by the surface of the substrate.
- the hood is designed in sandwich construction.
- both the thermally softenable or thermally curable material and the contacting structure form layers in the sandwich. These layers may, as already explained, consist of a thermoplastic film or a thermosetting prepreg, while the contacting structure may be formed for example by a metal foil or a leadframe.
- the semi-finished products are thus essentially two-dimensional and can be tailored to make the hood in a suitable manner. By stacking the individual layers creates the three-dimensional structure of the hood.
- an additional material is applied to the contact surfaces of the contacting structure in the hood.
- this may be a high-temperature solder, a diffusion solder or a sintered material. These filler materials then become weaker
- Assembly of the hood on the module for forming the joint connections available. Joining can be done in the manner already explained above. It is also advantageous if the support surface is formed by an edge of the hood. The hood is then placed with its edge on the substrate. If the edge is circumferential, when the cap is placed on the substrate, a closed cavity is produced which advantageously protects the assembly against dirt and other environmental influences. Incidentally, the contact surfaces or the contact surfaces provided with the additional material can also be provided on the edge of the hood since this can be used to contact the contacting structure with the substrate.
- the outside of the hood is flat. This brings the already explained Parts of a simplified assembly with it, since the joining tool can have a flat and therefore simple geometry and can also be used for different hood geometries (with a flat outer side) use. It is of course advantageous if the outside of the hood is formed parallel to the support surface, since the substrate, if this is mounted in a horizontal position, can also be mounted by horizontal application of the joining tools.
- Suitable materials for the electrical component are silicon, silicon carbide, gallium arsenide or gallium nitride. These materials are preferably used for power electronic devices.
- the substrate may be made of a ceramic, for example. This can be coated with copper, silver or gold, wherein the coating can be structured to form electrical contact surfaces and conductor tracks.
- high-temperature solders such as antimony-containing alloys or conventional high-lead solders, diffusion solders of the Sn-Cu, Sn-Cu-Ni, Sn-Cu-Ag, and preferably silver-containing sintering pastes or sintered foils can be used as filler materials. Further details of the invention are described below with reference to the drawing. Identical or corresponding drawing elements are each provided with the same reference numerals and will only be explained several times as far as there are differences between the individual figures. Show it:
- FIG 1 shows an embodiment of the invention
- Method, Figures 2 and 3 further process steps of this embodiment of the method according to the invention as a side view, partially cut and
- Figure 4 shows an assembly, fully assembled, with a
- Hood according to another embodiment of the method according to the invention in cross section.
- FIG. 1 shows a hood 11, which according to FIG. 3 can be placed on a substrate 13 equipped with an electrical component 12.
- the hood consists of several layers that together form a sandwich structure.
- the contacting structure is thus integrated into the material of the hood.
- an additional material in the form of a diffusion solder is provided in this example.
- the hood has an inner side 18 and an outer side 19, wherein the outer side 19 is made flat so that a joining tool 20a with a flat pressure surface can be placed on the outer side 19 of the hood 11 (see FIG.
- FIG. 2 shows the substrate 13, which has a mounting side 23 and a rear side 24. This is a non-illustrated DCB ceramic substrate, wherein the copper layers are not shown in detail.
- the copper layer, not shown, on the mounting side 23 is structured in a suitable manner, so that the component 12 to be assembled can be contacted in a suitable manner.
- FIG. 3 In Figure 3 is shown how the electrical assembly to be mounted is formed. It can be seen that on the mounting side 23 of the substrate 13 in the area of the additional material (see FIG. 2), the component 12 has been placed with its underside 26 on the mounting side 23 of the substrate 13. This device 12 has on its upper side 27 not shown electrical contacts.
- the hood 11 according to FIG. 1 is placed on the assembly formed in this way, consisting of the substrate 13 and the component 12, the contacting structures 16 with their ends and the filler material (see FIG. 1) on the upper side 27 of the component 12 and Mounting side 23 of the substrate 13 come to rest.
- the ends of the contacting structure 16 are each at different levels, in Figure 3 as the first Fügelevel 28, given by the mounting side 23 of the substrate 13, and as a second Fügelevel 29, specified by top 27 of the device 12, characterized are.
- a third level 30 is provided by the bottom 24 of the substrate 13. This serves to fasten a base plate 31, which is designed as a heat sink and as a component via the filler material (see Figure 2) with the bottom 24 of the substrate 13 is thermally conductively connected.
- cooling channels 32 may be provided for the purpose of cooling.
- the additional material 17 ensures that this configuration for handling purposes already has sufficient stability in the further manufacturing process.
- mating aids may be present. These may for example consist of external tools, such as brackets. It is also possible to integrate in the individual components joining aids, such as clip connections (not shown). The mounting of the individual components of the assembly by means of these mating aids is only temporary until the final assembly of the module.
- the two layers 15 of metal within the lower layer 14 of the prepreg are also connected via a shaped piece of the filler material (see Figure 1).
- This has the advantage that these two layers can be reliably connected to each other during the joining process.
- a metallic connection 35a is thus also produced during the joining process, for example a sintered connection.
- the contacting structure 16 is made of one piece.
- the layers 14 of the prepreg must then be cut in a suitable manner, so that they can be laid in front of and behind the vertically extending parts of the contacting structure. Since the layers of the prepreg are elastic, certain undercuts can be overcome in this case.
- the final assembly is also indicated in FIG.
- the module is inserted in a suitable tool.
- This consists of joining tools 20a, 20b, which are brought from below and from above to the finished assembly 25.
- the joining tools have bearing surfaces 34, with which a compressive force P can be exerted on the components to be joined.
- These bearing surfaces 34 are advantageously carried out flat, which thereby succeeds that both the base plate 31 and the hood 11 level in a suitable manner
- a heater not shown, with which the joining tools are brought to the temperature T, the heat transferred over the entire bearing surface 34 on the assembly 25.
- the heat in the joining tools can be done for example via an electrical resistance heater, not shown.
- the filler material (see FIG. 1) is converted into joint connections 35, 35a according to FIG. 3, so that the assembly is permanently mounted in this way.
- FIG. 4 shows an alternatively configured module 25, specifically after the joining tools have been removed.
- the joining tools 33 according to FIG. 3 can also be used for the electrical assembly 25 according to FIG.
- the hood 11 according to FIG. 4 is designed differently than the hood according to FIGS. 1 and 3. It consists of a thermoplastic plastic material.
- a contacting structure 16 in the form of a leadframe has been inserted into the inner side 18 of the hood.
- excess parts of the leadframe have already been cut off (not shown in detail).
- the contacting structures have likewise been provided with an additional material (analogous to FIGS. 1 and 2), which forms joint connections 35 in the assembly 25 according to FIG.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014206608.5A DE102014206608A1 (de) | 2014-04-04 | 2014-04-04 | Verfahren zum Montieren eines elektrischen Bauelements, bei der eine Haube zum Einsatz kommt, und zur Anwendung in diesem Verfahren geeignete Haube |
PCT/EP2015/056867 WO2015150311A1 (fr) | 2014-04-04 | 2015-03-30 | Procédé de montage d'un composant électrique en utilisant un capot et capot adapté pour être employé dans ce procédé |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3105784A1 true EP3105784A1 (fr) | 2016-12-21 |
Family
ID=52824226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP15715699.3A Withdrawn EP3105784A1 (fr) | 2014-04-04 | 2015-03-30 | Procédé de montage d'un composant électrique en utilisant un capot et capot adapté pour être employé dans ce procédé |
Country Status (6)
Country | Link |
---|---|
US (1) | US10008394B2 (fr) |
EP (1) | EP3105784A1 (fr) |
JP (1) | JP6498272B2 (fr) |
CN (1) | CN106133895B (fr) |
DE (1) | DE102014206608A1 (fr) |
WO (1) | WO2015150311A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021259536A2 (fr) | 2020-06-23 | 2021-12-30 | Siemens Aktiengesellschaft | Procédé de mise en contact d'un semi-conducteur de puissance sur un substrat |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014206601A1 (de) | 2014-04-04 | 2015-10-08 | Siemens Aktiengesellschaft | Verfahren zum Montieren eines elektrischen Bauelements, bei der eine Haube zum Einsatz kommt, und zur Anwendung in diesem Verfahren geeignete Haube |
DE102014206608A1 (de) | 2014-04-04 | 2015-10-08 | Siemens Aktiengesellschaft | Verfahren zum Montieren eines elektrischen Bauelements, bei der eine Haube zum Einsatz kommt, und zur Anwendung in diesem Verfahren geeignete Haube |
EP3246941A1 (fr) | 2016-05-18 | 2017-11-22 | Siemens Aktiengesellschaft | Bloc electronique comprenant un composant dispose entre deux porte-circuits et procede d'assemblage d'un tel bloc |
DE102016208498A1 (de) | 2016-05-18 | 2017-11-23 | Siemens Aktiengesellschaft | Elektronische Baugruppe mit zwischen zwei Schaltungsträgern befindlichen Bauelement und Verfahren zu deren Herstellung |
DE102016220553A1 (de) | 2016-10-20 | 2018-04-26 | Robert Bosch Gmbh | Leistungsmodul |
EP3399546A1 (fr) | 2017-05-02 | 2018-11-07 | Siemens Aktiengesellschaft | Module électronique comprenant un élément de construction inséré entre deux substrats et son procédé de fabrication |
DE102017207329A1 (de) | 2017-05-02 | 2018-11-08 | Siemens Aktiengesellschaft | Elektronische Baugruppe mit einem zwischen zwei Substraten eingebauten Bauelement und Verfahren zu dessen Herstellung |
DE102017211330A1 (de) * | 2017-07-04 | 2019-01-10 | Siemens Aktiengesellschaft | Toleranzausgleichselement für Schaltbilder |
DE102017212233A1 (de) * | 2017-07-18 | 2019-01-24 | Siemens Aktiengesellschaft | Elektrische Baugruppe und Verfahren zur Herstellung einer elektrischen Baugruppe |
CN111868900A (zh) * | 2018-03-23 | 2020-10-30 | 三菱综合材料株式会社 | 电子组件安装模块的制造方法 |
DE102018204887B3 (de) * | 2018-03-29 | 2019-09-05 | Danfoss Silicon Power Gmbh | Verfahren zum Montieren einer Halbleiterleistungsmodulkomponente und eines Halbleiterleistungsmoduls mit einer derartigen Modulkomponente |
US11670570B2 (en) | 2019-05-22 | 2023-06-06 | Samsung Electronics Co., Ltd. | Electronic device and method of manufacturing an electronic device |
DE102019117091B4 (de) * | 2019-06-25 | 2023-04-06 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung zur stoffschlüssigen Verbindung von Verbindungspartnern eines Leistungselektronik-Bauteils und Verwendung der Vorrichtung zum stoffschlüssigen Verbinden |
DE102019214996A1 (de) * | 2019-09-06 | 2021-03-11 | Siemens Aktiengesellschaft | Halbzeug zur Bauteilbestückung, Verfahren zur Bauteilbestückung und Verwendung des Halbzeugs |
DE102020109555A1 (de) * | 2020-04-06 | 2021-10-07 | Infineon Technologies Ag | Eingehäuste halbleitervorrichtung und verfahren zur herstellung einer eingehäusten halbleitervorrichtung |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207475B1 (en) * | 1999-03-30 | 2001-03-27 | Industrial Technology Research Institute | Method for dispensing underfill and devices formed |
US20140008811A1 (en) * | 2012-07-09 | 2014-01-09 | Freescale Semiconductor, Inc. | Device package with rigid interconnect structure connecting die and substrate and method thereof |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PT782765E (pt) | 1994-09-23 | 2000-12-29 | Imec Inter Uni Micro Electr | Embalagem matricial com saliencias de polimero |
US5986334A (en) | 1996-10-04 | 1999-11-16 | Anam Industrial Co., Ltd. | Semiconductor package having light, thin, simple and compact structure |
JPH11289023A (ja) | 1998-04-02 | 1999-10-19 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
DE10062108B4 (de) | 2000-12-13 | 2010-04-15 | Infineon Technologies Ag | Leistungsmodul mit verbessertem transienten Wärmewiderstand |
JP4045083B2 (ja) | 2000-12-25 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体モジュールおよび実装構造体 |
JPWO2006043388A1 (ja) | 2004-10-21 | 2008-05-22 | 松下電器産業株式会社 | 半導体内蔵モジュール及びその製造方法 |
JP4770533B2 (ja) | 2005-05-16 | 2011-09-14 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
US7468548B2 (en) | 2005-12-09 | 2008-12-23 | Fairchild Semiconductor Corporation | Thermal enhanced upper and dual heat sink exposed molded leadless package |
JP2007324550A (ja) | 2006-06-05 | 2007-12-13 | Denso Corp | 多層基板 |
KR100790994B1 (ko) | 2006-08-01 | 2008-01-03 | 삼성전자주식회사 | 이미지 센서 패키지, 그 제조 방법 및 이미지 센서패키지를 포함하는 이미지 센서 모듈 |
DE102006044525B3 (de) * | 2006-09-21 | 2008-01-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von gemeinsam bereitstellbaren flexiblen integrierten Schaltkreisen |
US7525187B2 (en) | 2006-10-13 | 2009-04-28 | Infineon Technologies Ag | Apparatus and method for connecting components |
JP5042591B2 (ja) | 2006-10-27 | 2012-10-03 | 新光電気工業株式会社 | 半導体パッケージおよび積層型半導体パッケージ |
DE102007036045A1 (de) | 2007-08-01 | 2009-02-05 | Siemens Ag | Elektronischer Baustein mit zumindest einem Bauelement, insbesondere einem Halbleiterbauelement, und Verfahren zu dessen Herstellung |
DE102007057346B3 (de) * | 2007-11-28 | 2009-06-10 | Fachhochschule Kiel | Laminierte Leistungselektronikbaugruppe |
JP5543086B2 (ja) * | 2008-06-25 | 2014-07-09 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
US8201326B2 (en) | 2008-12-23 | 2012-06-19 | Infineon Technologies Ag | Method of manufacturing a semiconductor device |
JP5245925B2 (ja) | 2009-03-06 | 2013-07-24 | 富士通株式会社 | 電子部品及びその製造方法 |
DE102009016112A1 (de) | 2009-04-03 | 2010-10-14 | Technische Universität Carolo-Wilhelmina Zu Braunschweig | Einrichtung mit einem elektrischen Bauelement und wenigstens einer elektrischen Anschlussleitung |
JP5077448B2 (ja) | 2010-04-02 | 2012-11-21 | 株式会社デンソー | 半導体チップ内蔵配線基板及びその製造方法 |
US8598695B2 (en) | 2010-07-23 | 2013-12-03 | Tessera, Inc. | Active chip on carrier or laminated chip having microelectronic element embedded therein |
US8847376B2 (en) | 2010-07-23 | 2014-09-30 | Tessera, Inc. | Microelectronic elements with post-assembly planarization |
US8502367B2 (en) * | 2010-09-29 | 2013-08-06 | Stmicroelectronics Pte Ltd. | Wafer-level packaging method using composite material as a base |
KR101204187B1 (ko) | 2010-11-02 | 2012-11-23 | 삼성전기주식회사 | 소성 접합을 이용한 파워 모듈 및 그 제조 방법 |
KR101218989B1 (ko) * | 2011-07-15 | 2013-01-21 | 삼성전기주식회사 | 반도체 패키지 및 그 제조방법 |
US9018725B2 (en) | 2011-09-02 | 2015-04-28 | Optiz, Inc. | Stepped package for image sensor and method of making same |
CN102496612B (zh) | 2011-12-21 | 2013-09-18 | 重庆西南集成电路设计有限责任公司 | 一种采用陶瓷外壳封装的具有高隔离度的集成电路 |
US9888568B2 (en) | 2012-02-08 | 2018-02-06 | Crane Electronics, Inc. | Multilayer electronics assembly and method for embedding electrical circuit components within a three dimensional module |
US8975117B2 (en) | 2012-02-08 | 2015-03-10 | Infineon Technologies Ag | Semiconductor device using diffusion soldering |
CN102738131B (zh) | 2012-03-07 | 2016-02-24 | 苏州晶方半导体科技股份有限公司 | 半导体模组、封装结构及其封装方法 |
CN202495439U (zh) | 2012-03-07 | 2012-10-17 | 苏州晶方半导体科技股份有限公司 | 半导体封装结构及其模组 |
JP2014011236A (ja) | 2012-06-28 | 2014-01-20 | Honda Motor Co Ltd | 半導体装置、並びに、半導体装置の製造装置及び製造方法 |
DE102014206608A1 (de) | 2014-04-04 | 2015-10-08 | Siemens Aktiengesellschaft | Verfahren zum Montieren eines elektrischen Bauelements, bei der eine Haube zum Einsatz kommt, und zur Anwendung in diesem Verfahren geeignete Haube |
DE102014206601A1 (de) | 2014-04-04 | 2015-10-08 | Siemens Aktiengesellschaft | Verfahren zum Montieren eines elektrischen Bauelements, bei der eine Haube zum Einsatz kommt, und zur Anwendung in diesem Verfahren geeignete Haube |
-
2014
- 2014-04-04 DE DE102014206608.5A patent/DE102014206608A1/de not_active Withdrawn
-
2015
- 2015-03-30 WO PCT/EP2015/056867 patent/WO2015150311A1/fr active Application Filing
- 2015-03-30 US US15/301,787 patent/US10008394B2/en active Active
- 2015-03-30 EP EP15715699.3A patent/EP3105784A1/fr not_active Withdrawn
- 2015-03-30 JP JP2017503061A patent/JP6498272B2/ja active Active
- 2015-03-30 CN CN201580018035.0A patent/CN106133895B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207475B1 (en) * | 1999-03-30 | 2001-03-27 | Industrial Technology Research Institute | Method for dispensing underfill and devices formed |
US20140008811A1 (en) * | 2012-07-09 | 2014-01-09 | Freescale Semiconductor, Inc. | Device package with rigid interconnect structure connecting die and substrate and method thereof |
Non-Patent Citations (1)
Title |
---|
See also references of WO2015150311A1 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021259536A2 (fr) | 2020-06-23 | 2021-12-30 | Siemens Aktiengesellschaft | Procédé de mise en contact d'un semi-conducteur de puissance sur un substrat |
Also Published As
Publication number | Publication date |
---|---|
US20170117162A1 (en) | 2017-04-27 |
WO2015150311A1 (fr) | 2015-10-08 |
JP6498272B2 (ja) | 2019-04-10 |
US10008394B2 (en) | 2018-06-26 |
DE102014206608A1 (de) | 2015-10-08 |
CN106133895A (zh) | 2016-11-16 |
JP2017513241A (ja) | 2017-05-25 |
CN106133895B (zh) | 2019-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3105784A1 (fr) | Procédé de montage d'un composant électrique en utilisant un capot et capot adapté pour être employé dans ce procédé | |
EP3103138B1 (fr) | Procédé de montage d'un composant électrique en utilisant un capot | |
DE10066446B4 (de) | Verfahren zur Herstellung eines elektronischen Bauteils mit zwei Abstrahlungsbauteilen | |
DE102011006341A1 (de) | Verfahren zur Fertigung eines Verdrahtungssubsrats mit eingebetteten Halbleiterchip | |
EP3036761B1 (fr) | Procédé de soudage par diffusion d'un composant électronique avec une surface de montage avec des enfoncements sur un substrat | |
EP2743973A2 (fr) | Procédé de mise en contact d'un élément semi-conducteur par soudage d'un élément de contact à une couche frittée sur l'élément semi-conducteur et composant semi-conducteur avec une stabilité améliorée vis-à-vis des influences thermomécaniques | |
DE102018204887B3 (de) | Verfahren zum Montieren einer Halbleiterleistungsmodulkomponente und eines Halbleiterleistungsmoduls mit einer derartigen Modulkomponente | |
EP2812912A2 (fr) | Système de connexion d'un composant électrique et/ou électronique | |
DE102013219833A1 (de) | Halbleitermodul mit leiterplatte und vefahren zur hertellung eines halbleitermoduls mit einer leiterplatte | |
EP2516321B1 (fr) | Capteur comportant un substrat céramique de préférence multicouche et procédé de fabrication correspondant | |
DE102007037538A1 (de) | Baugruppe sowie Herstellung einer Baugruppe | |
DE102007058497A1 (de) | Laminierte mehrschichtige Leiterplatte | |
EP3399546A1 (fr) | Module électronique comprenant un élément de construction inséré entre deux substrats et son procédé de fabrication | |
WO2014095066A1 (fr) | Procédé de montage d'un module à diode laser | |
DE102014206606A1 (de) | Verfahren zum Montieren eines elektrischen Bauelements auf einem Substrat | |
EP2382654A1 (fr) | Structure de composant exempte de métal d'apport et résistant aux hautes températures et procédé de mise en contact électrique | |
EP3582928B1 (fr) | Préformé de brasage pour produire une jonction brasée par diffusion et procédé destiné à produire un préformé de brasage | |
DE102013110812B3 (de) | Verfahren zur Herstellung eines weitergebildeten Metallformkörpers und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung mit einer Lotverbindung diesen weitergebildeten Metallformkörper verwendend. | |
EP3718136A1 (fr) | Assemblage à semi-conducteur et procédé pour la production de l'assemblage à semi-conducteur | |
DE102017207329A1 (de) | Elektronische Baugruppe mit einem zwischen zwei Substraten eingebauten Bauelement und Verfahren zu dessen Herstellung | |
EP3741562B1 (fr) | Procédé de fabrication d'un module semi-conducteur | |
EP3799539B1 (fr) | Support de circuit, emballage et son procédé de fabrication | |
DE102017204887B4 (de) | Verfahren mit Nutzung eines Flüssigmetalls zur Fügung thermoelektrischer Module in einem SLID-Prozess und damit hergestellte Anordnung und Verwendung zur Fügung thermoelektrischer Module | |
WO2005122248A1 (fr) | Elements a semi-conducteurs a boitier en matiere plastique et procede de production correspondant | |
DE102012221990A1 (de) | Verbindungsmittel zum Verbinden von wenigstens zwei Komponenten unter Verwendung eines Sinterprozesses |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20160913 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SIEMENS AKTIENGESELLSCHAFT |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20190322 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 23/31 20060101ALN20211216BHEP Ipc: H01L 23/498 20060101ALI20211216BHEP Ipc: H01L 23/495 20060101ALI20211216BHEP Ipc: H01L 23/485 20060101ALI20211216BHEP Ipc: H01L 23/473 20060101ALI20211216BHEP Ipc: H01L 23/373 20060101ALI20211216BHEP Ipc: H01L 23/14 20060101ALI20211216BHEP Ipc: H01L 23/13 20060101ALI20211216BHEP Ipc: H01L 21/56 20060101AFI20211216BHEP |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 23/31 20060101ALN20220112BHEP Ipc: H01L 23/498 20060101ALI20220112BHEP Ipc: H01L 23/495 20060101ALI20220112BHEP Ipc: H01L 23/485 20060101ALI20220112BHEP Ipc: H01L 23/473 20060101ALI20220112BHEP Ipc: H01L 23/373 20060101ALI20220112BHEP Ipc: H01L 23/14 20060101ALI20220112BHEP Ipc: H01L 23/13 20060101ALI20220112BHEP Ipc: H01L 21/56 20060101AFI20220112BHEP |
|
INTG | Intention to grant announced |
Effective date: 20220124 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20220604 |