EP3105784A1 - Method for mounting an electrical component, wherein a hood is used, and hood suitable for use in said method - Google Patents

Method for mounting an electrical component, wherein a hood is used, and hood suitable for use in said method

Info

Publication number
EP3105784A1
EP3105784A1 EP15715699.3A EP15715699A EP3105784A1 EP 3105784 A1 EP3105784 A1 EP 3105784A1 EP 15715699 A EP15715699 A EP 15715699A EP 3105784 A1 EP3105784 A1 EP 3105784A1
Authority
EP
European Patent Office
Prior art keywords
hood
substrate
component
joining
contacting structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15715699.3A
Other languages
German (de)
French (fr)
Inventor
Nora BUSCHE
Jörg Strogies
Klaus Wilke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP3105784A1 publication Critical patent/EP3105784A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29116—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/40227—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/163—Connection portion, e.g. seal
    • H01L2924/164—Material
    • H01L2924/165—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/166—Material
    • H01L2924/1679—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy

Definitions

  • the invention relates to a method for mounting an electrical component on a substrate, wherein the component has a bottom side facing the substrate and a top side opposite thereto.
  • the bottom of the device is mechanically connected to the assembly available through the substrate.
  • the upper side of the component is then mechanically connected to a contacting structure.
  • the joint connections that arise during joining lie in at least two different levels.
  • the invention relates to a hood for an electrical assembly, wherein the assembly comprises a substrate and at least one mounted on this component.
  • the hood has a support surface with which it can be placed on the substrate.
  • the hood has a cavity in which the component can be accommodated.
  • the device has contacts both at its top and at its bottom, with which it is mounted on the substrate. These contacts are thus at different levels.
  • the levels of friction are defined by the contacts of electronic components being mounted on a substrate and contacting in different planes, the term level being meant here in the technical rather than the mathematical sense.
  • a plane or also the associated level of levelness defines areas in which certain electrical or other mechanical connections of the components to be contacted are located. Due to the arrangement of components one above the other, the levels are preferably Fügelevel also one above the other, in particular in parallel alignment with each other.
  • a power module can be formed, in which the electronic hobauele- elements can be connected via a sintered layer to the substrate.
  • the substrate may be DCB ceramic substrates commonly used in power electronics (DCB stands for Direct Copper Bond).
  • DCB Direct Copper Bond
  • the tops of the power components can be connected with a sintered layer, for example, to an additional heat capacity, which provides a heat sink available.
  • the substrate can be connected with its underside via a sintered layer with another heat sink.
  • the sintered connections of electronic assemblies can be manufactured with the aid of special tools. These tools have pressure surfaces which contact the components to be sintered, so that a pressure can be exerted on them during the sintering treatment.
  • Tolerance compensation in the tool can ensure that the applied pressure is uniform even when the assembly to be sintered has tolerances due to manufacturing inaccuracies.
  • the sintering treatment in addition to the pressure build-up, reaching a certain sintering temperature over a defined period of time is required. Instead of sintered connections can also be used.
  • a contacting of these components with the substrate usually has to take place via suitable contacting structures.
  • contacts lying on the upper side of the component are connected to corresponding contacts on the substrate.
  • metallic lead structures can be used, which may for example be part of a lead frame.
  • the appropriately bent lead structures are preferably connected by sintering or soldering with the respective contact surfaces.
  • Another possibility is to provide the contacting structures by means of flex films on which the conductive structure is for example printed.
  • the flex foils can also be connected by means of sintered connections to the relevant contact surfaces of the upper side of the component and to the mounting side of the substrate.
  • the assembly of power electronic assemblies means Sintered connections in comparison, for example, for soldering at the time a certain overhead in the production.
  • the object of the invention is to provide a method for mounting an electrical component on a substrate, wherein this is simplified and also allows the assembly of power electronic components. Furthermore, the object is to provide a hood of the type specified, which can be used in this improved method.
  • the contacting structure is integrated in the form of guide paths in a hood.
  • This hood is made of a thermally softenable or thermally curable material.
  • the hood is first placed on the mounting side of the substrate.
  • the hood spans the component (or several components).
  • the contact surfaces of the contacting structure with the substrate lie within a first level of furring, which is provided by the mounting side of the substrate. With these contact surfaces, the substrate is electrically connected.
  • On the inside of the hood there are further contact surfaces of the Kunststofftechniksstruk- tur, which reach within a second Fügelevels at the level of the top of the device with there located contacts of the device in engagement.
  • the contacting structure creates an electrical connection between the contact surfaces on the substrate and the contact surfaces on the upper side of the component, wherein the two Fügelevel be bridged.
  • the material of the hood during assembly at least in the softening region (in the case of the existence of the hood of a thermally softenable material) or in the curing area (in the case of the existence of the hood of a thermally curable material) is heated.
  • the softening area or the curing area is characterized by a temperature range in which the softening takes place in the dimensions permissible for the assembly process or the hardening of the material.
  • the substrate, the component and the hood with the contacting structure are first placed in relation to each other in the configuration to be produced. Only then should the joining compounds, in particular electrical connections, be completed on the component within the at least two levels in one and the same operation by increasing the temperature or increasing the temperature and pressure.
  • the method for mounting the electronic module on the substrate is to take place in two defined process sections. In the first process section, all components to be assembled of the assembly provided by the substrate are placed relative to one another. This also leads to the formation of the joint connections, which are not yet completed. In the second production phase, the joints are completed.
  • a suitable joining method is necessary, depending on the type of mechanical connections to be made a temperature increase (for example, during soldering) or a temperature and pressure increase (for example, in diffusion soldering or sintering) is required. It is advantageously provided that these joint connections are produced in one operation. you can. For this purpose, it is necessary to design all joints to be produced on the process parameters set in this single operation. Here, a certain temperature level is reached. In addition, at least a portion of the compounds additionally pressure can be exercised.
  • the particular type of connection and possibly necessary additional material do not necessarily have to be exactly the same for all joint connections. All that is essential is that the process parameters for all types of connection and materials are matched to one another and in this way the simultaneous formation of all joints in a single operation is possible.
  • the bottom of the device is within a first Fügelevels, which is provided by a mounting side of the substrate and the top of the device is within a second Fügelevels.
  • the first level of skimming is defined by the plane that is usually provided by the substrate.
  • This level (which in the case of non-flat substrates, such as housings, for example, does not necessarily have to be flat in the mathematical sense) lies the group of electrical connections with which the underside of the electrical components on the substrate is contacted in each case.
  • the top of the components then defines, if they have electrical contact surfaces, a second Fügelevel, by the spatial height extent of the electrical components of the first Fügelevel
  • the second level Fügel is not in a plane, the sum of all contact surfaces on the respective top of components this Fü- level defined.
  • each level of the stack results in further levels of conduction, which possibly have to be bridged by appropriate contact structures during electrical connection.
  • the arrangement of the electrical components such that their contacts can be assigned in each case to different pad levels advantageously facilitates the assembly of the electrical module, in which the components and contact structures can be preassembled level by level (ie, can be placed relative to one another), in order subsequently to connect the modules preferably to produce electrical connections in all levels Fügeleveln in one operation.
  • the softening or curing of the hood and the completion of the joints in one and the same operation is carried out under the same conditions.
  • the temperature range of the softening area or hardening area at least overlaps with the temperature range for the completion of the joining connections. In this case, a temperature can be found for the assembly, at the same time the completion of the joints and the hardening or softening of
  • Hood can take place.
  • the hardening or softening of the hood and the completion of the joint connections can also be carried out successively in the same operation.
  • the material of the hood of a plastic deformation must oppose a sufficient resistance, so that possibly at the completion of the joint connection, a pressure can be built up, which may be required in the case of the production of sintered connections or Diffusionslöteducationen to the electrical contacts.
  • This pressure can be built up by simultaneously contributing, during plastic deformation, a proportion of elastic deformation in the mold Material of the hood is created.
  • Silver sintered paste e.g., Heraeus mAgic Paste, Microbond ASP series
  • Material system SnCu, SnAg, SnNi and other material systems that can form refractory intermetallic phases may be used, such as
  • Single ply systems with refractory particles e.g., Cu
  • refractory particles e.g., Cu
  • low melting alloys such as SnCu
  • the low melting filler e.g., refractory Cu followed by SnCu alloy
  • Prepreg material eg Isola Duraver-E-Cu quality 104 ML
  • Thermally softenable hood material eg Isola Duraver-E-Cu quality 104 ML
  • thermoplastic materials such as thermoplastic materials
  • PET Polyethylene terephthalate
  • PEEK Polyetheretherketones
  • PPA polyphthalamides
  • the substrate with its side facing away from the mounting side provides a contact surface
  • a third level is provided.
  • a component is placed.
  • a connection between the component and the substrate in exactly the operation by a temperature increase or a temperature and pressure increase completed, in which the joints on the electrical component in the first Fuellevel and the second Fügelevel (and possibly further Fill levels).
  • the component which is mounted on the back of the substrate, may be, for example, a heat sink, which is used in power electronic assemblies to dissipate the heat loss.
  • This heat sink can also be designed as a base body, wherein this is available for common assembly of several electronic assemblies available.
  • Another possibility is to equip the substrate with electrical components on both sides. In this case, cooling could take place, for example, through cooling channels in the substrate.
  • all joint connections are completed with one and the same joining method.
  • the condition must be fulfilled that the various selected joining methods can be carried out under the given process conditions (pressure, temperature).
  • the temperature must be the same over the entire electrical assembly to be mounted.
  • the pressure can vary, for example, by using a plurality of joining tools or a joining tool is provided, in which, for example, by Spring mechanisms with different spring stiffness different manufacturing pressures are applied to different components of the mating Auf from. Even in the event that all joint connections are completed with one and the same joining method, these conditions apply.
  • the same filler material can also be selected, so that the production conditions for the joining method are uniform for the entire assembly. But it is also possible to select different filler materials, as far as they can be completed in the manner explained above under the predetermined joining conditions.
  • the explained advantages can also be extended to the joining of the connection between the component and the substrate, which can be completed in one operation together with the joining connections on the mounting side of the substrate.
  • the connections on the back side of the substrate can also be electrical connections if the component which is mounted there is an electrical component.
  • Yet another embodiment of the invention provides that a diffusion soldering or sintering is used as the joining method.
  • Diffusion soldering has a process related to sintering.
  • An additional material is introduced into the area between the components to be joined, whereby the latter, under the influence of temperature and optionally elevated pressure, leads to a diffusion of low-melting and high-melting contributes to the alloying components.
  • These local changes in concentration occur in the joining zone and at their interfaces to the adjacent components for generating high-melting intermetallic phases, which have a high temperature stability.
  • the resulting compound has very high electrical and thermal conductivities as well as high mechanical strengths.
  • a filler material is applied to the substrate and / or the component and / or the contacting structure in the hood and / or the component before placing it in the configuration to be produced.
  • these filler materials can facilitate joining, for example, sintering or diffusion soldering.
  • the connection components responsible for the sintering processes or diffusion processes can also be contained in the contact surfaces for the compound to be formed. In classical soldering, however, a filler material is always required as filler material.
  • a flat surface allows the simple placement of a joining tool, with which the pressure on the assembly to be mounted can be exercised. Incidentally, this tool can also provide the required process heat when it is heated. The transfer of process heat to the components to be joined, in particular the hood, is also improved if a flat surface is available, which extends in particular over the entire surface extent of the hood. Another advantage is that the joining tool does not have to be geometrically adapted to the hood.
  • the joining tool can be equipped as standard with a flat surface for applying pressure, with basically hoods of different application cases, thus, for example, with different size or with different structuring of the inside, can be mounted with one and the same joining tool.
  • a prepreg is used as the hardenable material. These materials can be obtained as semi-finished products and in this way make hoods of different structure without great manufacturing effort.
  • prepreg composite materials of fibers and a matrix of not completely cured, preferably thermosetting, resin understood. However, the resin may be partially cured to improve the mechanical stability and processing characteristics of the prepreg. Final curing then takes place, as already explained, during the assembly of the hood.
  • hood prepregs from Isola Duraver-E-Cu, for example, can be used. These are then cut to size and layered to form a layered three-dimensional structure.
  • the contacting structure can likewise be formed from layer material, for example metal foils, or else a leadframe. These metallic structures are then integrated into the layer composite and embedded in the latter by the hardening of the hood material.
  • phase change material also called phase change material
  • phase change materials are materials whose latent heat of fusion, solution heat or heat of absorption is greater than the heat that can store these materials due to their specific heat capacity, ie without phase change effect. With regard to their phase change behavior, these materials are selected such that this phase change is achieved in the planned operation of the electronic module, at least in certain operating states. In this way, it is possible to ensure be made that the hood, for example, provides a cooling reserve available in the overload operation of power electronic components by a phase change of the phase change material is forced by the heating.
  • phase change material can therefore not form the hood alone, but must be incorporated into another material of the hood. For example, this could take the form of a pad filled with the phase change material, this being embedded in the remaining material of the hood.
  • the phase change material can be used during assembly due to a presence in the liquid phase as tolerance compensation and can be plastically deformed in this state. Therefore, the assembly process can benefit from the use of the phase change material, even if their properties are mainly important for the later operation of the assembly.
  • the invention is further achieved with the hood mentioned above according to the invention in that a contacting structure is integrated in the form of guide paths in a hood.
  • the hood itself consists of a thermally softenable or thermally curable material.
  • the contacting structure on the inside of the hood has contact surfaces which serve for electrical connection to the substrate and to the component.
  • the contacting structure extends on the inside of the hood, wherein this extends such that the contact surfaces are arranged at different levels, which define the Fügelevel in the subsequent assembly. As already explained, one of these levels is provided by the surface of the substrate.
  • the hood is designed in sandwich construction.
  • both the thermally softenable or thermally curable material and the contacting structure form layers in the sandwich. These layers may, as already explained, consist of a thermoplastic film or a thermosetting prepreg, while the contacting structure may be formed for example by a metal foil or a leadframe.
  • the semi-finished products are thus essentially two-dimensional and can be tailored to make the hood in a suitable manner. By stacking the individual layers creates the three-dimensional structure of the hood.
  • an additional material is applied to the contact surfaces of the contacting structure in the hood.
  • this may be a high-temperature solder, a diffusion solder or a sintered material. These filler materials then become weaker
  • Assembly of the hood on the module for forming the joint connections available. Joining can be done in the manner already explained above. It is also advantageous if the support surface is formed by an edge of the hood. The hood is then placed with its edge on the substrate. If the edge is circumferential, when the cap is placed on the substrate, a closed cavity is produced which advantageously protects the assembly against dirt and other environmental influences. Incidentally, the contact surfaces or the contact surfaces provided with the additional material can also be provided on the edge of the hood since this can be used to contact the contacting structure with the substrate.
  • the outside of the hood is flat. This brings the already explained Parts of a simplified assembly with it, since the joining tool can have a flat and therefore simple geometry and can also be used for different hood geometries (with a flat outer side) use. It is of course advantageous if the outside of the hood is formed parallel to the support surface, since the substrate, if this is mounted in a horizontal position, can also be mounted by horizontal application of the joining tools.
  • Suitable materials for the electrical component are silicon, silicon carbide, gallium arsenide or gallium nitride. These materials are preferably used for power electronic devices.
  • the substrate may be made of a ceramic, for example. This can be coated with copper, silver or gold, wherein the coating can be structured to form electrical contact surfaces and conductor tracks.
  • high-temperature solders such as antimony-containing alloys or conventional high-lead solders, diffusion solders of the Sn-Cu, Sn-Cu-Ni, Sn-Cu-Ag, and preferably silver-containing sintering pastes or sintered foils can be used as filler materials. Further details of the invention are described below with reference to the drawing. Identical or corresponding drawing elements are each provided with the same reference numerals and will only be explained several times as far as there are differences between the individual figures. Show it:
  • FIG 1 shows an embodiment of the invention
  • Method, Figures 2 and 3 further process steps of this embodiment of the method according to the invention as a side view, partially cut and
  • Figure 4 shows an assembly, fully assembled, with a
  • Hood according to another embodiment of the method according to the invention in cross section.
  • FIG. 1 shows a hood 11, which according to FIG. 3 can be placed on a substrate 13 equipped with an electrical component 12.
  • the hood consists of several layers that together form a sandwich structure.
  • the contacting structure is thus integrated into the material of the hood.
  • an additional material in the form of a diffusion solder is provided in this example.
  • the hood has an inner side 18 and an outer side 19, wherein the outer side 19 is made flat so that a joining tool 20a with a flat pressure surface can be placed on the outer side 19 of the hood 11 (see FIG.
  • FIG. 2 shows the substrate 13, which has a mounting side 23 and a rear side 24. This is a non-illustrated DCB ceramic substrate, wherein the copper layers are not shown in detail.
  • the copper layer, not shown, on the mounting side 23 is structured in a suitable manner, so that the component 12 to be assembled can be contacted in a suitable manner.
  • FIG. 3 In Figure 3 is shown how the electrical assembly to be mounted is formed. It can be seen that on the mounting side 23 of the substrate 13 in the area of the additional material (see FIG. 2), the component 12 has been placed with its underside 26 on the mounting side 23 of the substrate 13. This device 12 has on its upper side 27 not shown electrical contacts.
  • the hood 11 according to FIG. 1 is placed on the assembly formed in this way, consisting of the substrate 13 and the component 12, the contacting structures 16 with their ends and the filler material (see FIG. 1) on the upper side 27 of the component 12 and Mounting side 23 of the substrate 13 come to rest.
  • the ends of the contacting structure 16 are each at different levels, in Figure 3 as the first Fügelevel 28, given by the mounting side 23 of the substrate 13, and as a second Fügelevel 29, specified by top 27 of the device 12, characterized are.
  • a third level 30 is provided by the bottom 24 of the substrate 13. This serves to fasten a base plate 31, which is designed as a heat sink and as a component via the filler material (see Figure 2) with the bottom 24 of the substrate 13 is thermally conductively connected.
  • cooling channels 32 may be provided for the purpose of cooling.
  • the additional material 17 ensures that this configuration for handling purposes already has sufficient stability in the further manufacturing process.
  • mating aids may be present. These may for example consist of external tools, such as brackets. It is also possible to integrate in the individual components joining aids, such as clip connections (not shown). The mounting of the individual components of the assembly by means of these mating aids is only temporary until the final assembly of the module.
  • the two layers 15 of metal within the lower layer 14 of the prepreg are also connected via a shaped piece of the filler material (see Figure 1).
  • This has the advantage that these two layers can be reliably connected to each other during the joining process.
  • a metallic connection 35a is thus also produced during the joining process, for example a sintered connection.
  • the contacting structure 16 is made of one piece.
  • the layers 14 of the prepreg must then be cut in a suitable manner, so that they can be laid in front of and behind the vertically extending parts of the contacting structure. Since the layers of the prepreg are elastic, certain undercuts can be overcome in this case.
  • the final assembly is also indicated in FIG.
  • the module is inserted in a suitable tool.
  • This consists of joining tools 20a, 20b, which are brought from below and from above to the finished assembly 25.
  • the joining tools have bearing surfaces 34, with which a compressive force P can be exerted on the components to be joined.
  • These bearing surfaces 34 are advantageously carried out flat, which thereby succeeds that both the base plate 31 and the hood 11 level in a suitable manner
  • a heater not shown, with which the joining tools are brought to the temperature T, the heat transferred over the entire bearing surface 34 on the assembly 25.
  • the heat in the joining tools can be done for example via an electrical resistance heater, not shown.
  • the filler material (see FIG. 1) is converted into joint connections 35, 35a according to FIG. 3, so that the assembly is permanently mounted in this way.
  • FIG. 4 shows an alternatively configured module 25, specifically after the joining tools have been removed.
  • the joining tools 33 according to FIG. 3 can also be used for the electrical assembly 25 according to FIG.
  • the hood 11 according to FIG. 4 is designed differently than the hood according to FIGS. 1 and 3. It consists of a thermoplastic plastic material.
  • a contacting structure 16 in the form of a leadframe has been inserted into the inner side 18 of the hood.
  • excess parts of the leadframe have already been cut off (not shown in detail).
  • the contacting structures have likewise been provided with an additional material (analogous to FIGS. 1 and 2), which forms joint connections 35 in the assembly 25 according to FIG.

Abstract

The invention relates to a method for mounting an electrical component (12) on a substrate (13). According to the invention, the joining is simplified by using a hood (11), wherein in said hood, a contacting structure (16) is provided, and upon placing the hood (11) at different joining levels (28, 29), said contacting structure is simultaneously joined with an additional material (35). The invention further relates to a hood that is suited for use in said method. According to the invention, the hood is made of a material that can be thermally softened or thermally hardened, preferably a resin or a thermoplastic synthetic material. Preferably, the hood is heated during the joining of the connections such that the hood may be plastically deformed. Beneficially, in this way, tolerances are compensated for during the joining process such that a reliable formation of all of the connections can occur. Furthermore, by means of the hood, a necessary joining pressure can be built up, such as is required, for example, in diffusion bonding or sinter bonding of the electrical contacts.

Description

Beschreibung description
Verfahren zum Montieren eines elektrischen Bauelements, bei der eine Haube zum Einsatz kommt, und zur Anwendung in diesem Verfahren geeignete Haube A method of mounting an electrical component using a hood and a hood suitable for use in this method
Die Erfindung betrifft ein Verfahren zum Montieren eines elektrischen Bauelements auf einem Substrat, wobei das Bauelement eine dem Substrat zugewandte Unterseite und eine die- ser gegenüberliegende Oberseite aufweist. Bei dem Verfahren wird die Unterseite des Bauelements mit der durch das Substrat zur Verfügung stehenden Baugruppe mechanisch verbunden. Die Oberseite des Bauelements wird dann mit einer Kontaktie- rungsstruktur mechanisch verbunden. Dabei liegen die Fügever- bindungen, die beim Fügen entstehen, in mindestens zwei unterschiedlichen Fügeleveln. The invention relates to a method for mounting an electrical component on a substrate, wherein the component has a bottom side facing the substrate and a top side opposite thereto. In the method, the bottom of the device is mechanically connected to the assembly available through the substrate. The upper side of the component is then mechanically connected to a contacting structure. In this case, the joint connections that arise during joining lie in at least two different levels.
Weiterhin betrifft die Erfindung eine Haube für eine elektrische Baugruppe, wobei die Baugruppe ein Substrat und mindes- tens ein auf diesem montiertes Bauelement aufweist. Die Haube weist eine Stützfläche auf, mit der sie auf das Substrat aufgesetzt werden kann. Außerdem weist die Haube eine Kavität auf, in der das Bauelement aufgenommen werden kann. Das Bauelement weist sowohl an seiner Oberseite als auch an seiner Unterseite, mit der es auf dem Substrat montiert wird, Kontakte auf. Diese Kontakte befinden sich damit auf verschiedenen Fügeleveln. Furthermore, the invention relates to a hood for an electrical assembly, wherein the assembly comprises a substrate and at least one mounted on this component. The hood has a support surface with which it can be placed on the substrate. In addition, the hood has a cavity in which the component can be accommodated. The device has contacts both at its top and at its bottom, with which it is mounted on the substrate. These contacts are thus at different levels.
Die Fügelevel werden dadurch definiert, dass sich die Kontak- te elektronischer Bauelemente beim Montieren auf einem Substrat und beim Kontaktieren in verschiedenen Ebenen befinden, wobei der Ausdruck Ebene hier im technischen und nicht im mathematischen Sinne gemeint ist. Eine Ebene oder auch der zugehörige Fügelevel definiert Bereiche, in denen bestimmte elektrische oder anderweitige mechanische Verbindungen der zu kontaktierenden Bauelemente liegen. Durch die Anordnung von Bauelementen übereinander liegen die Fügelevel vorzugsweise ebenfalls übereinander, insbesondere in paralleler Ausrichtung zueinander. The levels of friction are defined by the contacts of electronic components being mounted on a substrate and contacting in different planes, the term level being meant here in the technical rather than the mathematical sense. A plane or also the associated level of levelness defines areas in which certain electrical or other mechanical connections of the components to be contacted are located. Due to the arrangement of components one above the other, the levels are preferably Fügelevel also one above the other, in particular in parallel alignment with each other.
Verfahren zum Montieren von elektronischen Bauelementen auf Substraten sind bekannt. Diese Montageverfahren finden auch bei der Montage von elektronischen Baugruppen der Leistungselektronik Anwendung. Beispielsweise ist in der DE Methods for mounting electronic components on substrates are known. These assembly methods are also used in the assembly of electronic assemblies of power electronics application. For example, in the DE
100 62 108 AI beschrieben, dass ein Leistungsmodul ausgebildet werden kann, bei dem die elektronischen Leistungsbauele- mente über eine Sinterschicht mit dem Substrat verbunden werden können. Bei dem Substrat kann es sich um in der Leistungselektronik üblicherweise verwendete DCB-Keramiksubstrate handeln (DCB steht für Direct Copper Bond) . Die Oberseiten der Leistungsbauelemente können mit einer Sinterschicht bei- spielsweise an eine zusätzliche Wärmekapazität angeschlossen werden, die einen Kühlkörper zur Verfügung stellt. Genauso kann das Substrat mit seiner Unterseite über eine Sinterschicht mit einem weiteren Kühlkörper verbunden werden. Gemäß der DE 10 2007 047 698 AI ist bekannt, dass die Sinterverbindungen elektronischer Baugruppen mit Hilfe spezieller Werkzeuge gefertigt werden können. Diese Werkzeuge weisen Druckflächen auf, die die zu sinternden Bauteile berühren, so dass während der Sinterbehandlung ein Druck auf diese ausge- übt werden kann. Über Toleranzausgleiche in dem Werkzeug kann gewährleistet werden, dass der aufgebrachte Druck auch dann gleichmäßig ist, wenn die zu sinternde Baugruppe toleranzbedingte Fertigungsungenauigkeiten aufweist. Bei der Sinterbehandlung wird zusätzlich zu dem Druckaufbau das Erreichen ei- ner bestimmten Sintertemperatur über einen definierten Zeitraum erforderlich. Statt Sinterverbindungen können auch 100 62 108 AI described that a power module can be formed, in which the electronic Leistungsbauele- elements can be connected via a sintered layer to the substrate. The substrate may be DCB ceramic substrates commonly used in power electronics (DCB stands for Direct Copper Bond). The tops of the power components can be connected with a sintered layer, for example, to an additional heat capacity, which provides a heat sink available. Likewise, the substrate can be connected with its underside via a sintered layer with another heat sink. According to DE 10 2007 047 698 Al it is known that the sintered connections of electronic assemblies can be manufactured with the aid of special tools. These tools have pressure surfaces which contact the components to be sintered, so that a pressure can be exerted on them during the sintering treatment. Tolerance compensation in the tool can ensure that the applied pressure is uniform even when the assembly to be sintered has tolerances due to manufacturing inaccuracies. In the sintering treatment, in addition to the pressure build-up, reaching a certain sintering temperature over a defined period of time is required. Instead of sintered connections can also
Lötverbindungen vorgesehen werden. Soldered connections are provided.
Gemäß der US 2013/0201631 AI ist darauf zu achten, dass die für den Sintervorgang notwendigen Temperaturen so gewählt sind, dass bereits montierte Fügeverbindungen in der Baugruppe durch die gerade stattfindende Wärmebehandlung nicht wieder aufgeschmolzen werden. Dies wird dadurch erreicht, dass die Bauteilverbindungen, die vor dem betreffenden Verbindungsvorgang schon durchgeführt wurden, Verbindungsmaterialen aufweisen, deren Prozesstemperaturen (Erweichungstemperatur, Sintertemperatur, Schmelztemperatur) mit einem genügenden Sicherheitsabstand oberhalb derjenigen Prozesstemperatur des gerade stattfindenden Verbindungsprozesses liegen. Auf diesem Wege werden die bereits ausgebildeten Fügeverbindungen hinsichtlich ihrer Integrität durch den gerade ablaufenden Verbindungsvorgang nicht gefährdet . According to US 2013/0201631 AI, it must be ensured that the temperatures required for the sintering process are selected such that already mounted joint connections in the assembly are not remelted by the heat treatment currently taking place. This is achieved by that the component connections, which have already been carried out before the relevant connection process, have bonding materials whose process temperatures (softening temperature, sintering temperature, melting temperature) are above the process temperature of the bonding process taking place with a sufficient safety margin. In this way, the already formed joint connections are not compromised in terms of their integrity by the currently running connection process.
Nach erfolgter Montage der Bauelemente auf dem Substrat muss in der Regel noch eine Kontaktierung dieser Bauelemente mit dem Substrat über geeignete Kontaktierungsstrukturen erfolgen. Dabei werden an der Oberseite des Bauelements liegende Kontakte mit korrespondierenden Kontakten auf dem Substrat verbunden. Hierzu können neben den allgemein bekannten Bonddrähten gemäß der US 2012/0106109 AI auch metallische Leitstrukturen verwendete werden, die beispielsweise Teil eines Leadframes sein können. Die in geeigneter Weise gebogenen Leitstrukturen werden vorzugsweise mittels Sintern oder Löten mit den betreffenden Kontaktflächen verbunden. Eine andere Möglichkeit besteht darin, die Kontaktierungsstrukturen durch Flexfolien zur Verfügung zu stellen, auf denen die Leitstruktur beispielsweise aufgedruckt ist. Auch die Flexfolien kön- nen gemäß der DE 10 2009 016 112 AI mittels Sinterverbindungen an den betreffenden Kontaktflächen der Oberseite des Bauelements und der Montageseite des Substrats verbunden werden. After assembly of the components on the substrate, a contacting of these components with the substrate usually has to take place via suitable contacting structures. In this case, contacts lying on the upper side of the component are connected to corresponding contacts on the substrate. For this purpose, in addition to the well-known bonding wires according to US 2012/0106109 AI also metallic lead structures can be used, which may for example be part of a lead frame. The appropriately bent lead structures are preferably connected by sintering or soldering with the respective contact surfaces. Another possibility is to provide the contacting structures by means of flex films on which the conductive structure is for example printed. According to DE 10 2009 016 112 A1, the flex foils can also be connected by means of sintered connections to the relevant contact surfaces of the upper side of the component and to the mounting side of the substrate.
Durch die bei Aufbauten der Leistungselektronik umgesetzten elektrischen Leistungen werden die leistungselektronischenDue to the electrical power implemented in superstructures of power electronics, the power electronic
Baugruppen thermisch und elektrisch stark belastet, weswegen die elektrischen Verbindungen und anderen Fügeverbindungen eine hohe Zuverlässigkeit aufweisen müssen. Gerade Sinterverbindungen eignen sich zu diesem Zweck in besonderem Maße, da ihre thermische Stabilität sowie eine fehlerfreie Ausbildung der Fügeverbindung gewährleistet werden können. Allerdings bedeutet die Montage leistungselektronischer Baugruppen durch Sinterverbindungen im Vergleich beispielsweise zum Löten zur Zeit einen gewissen Mehraufwand in der Fertigung. Assemblies thermally and electrically heavily loaded, so the electrical connections and other joints must have high reliability. Especially sintered compounds are particularly suitable for this purpose, since their thermal stability and an error-free design of the joint connection can be ensured. However, the assembly of power electronic assemblies means Sintered connections in comparison, for example, for soldering at the time a certain overhead in the production.
Die Aufgabe der Erfindung besteht darin, ein Verfahren zum Montieren eines elektrischen Bauelements auf einem Substrat anzugeben, wobei dieses vereinfacht wird und auch die Montage von leistungselektronischen Bauelementen zulässt. Weiterhin besteht die Aufgabe eine Haube der eingangs angegebenen Art anzugeben, die in diesem verbesserten Verfahren zum Einsatz kommen kann . The object of the invention is to provide a method for mounting an electrical component on a substrate, wherein this is simplified and also allows the assembly of power electronic components. Furthermore, the object is to provide a hood of the type specified, which can be used in this improved method.
Diese Aufgabe wird mit dem eingangs angegebenen Verfahren erfindungsgemäß dadurch gelöst, dass die Kontaktierungsstruktur in Form von Leitpfaden in eine Haube integriert wird. Diese Haube ist aus einem thermisch erweichbaren oder thermisch aushärtbaren Material hergestellt. Bei der Montage wird die Haube zunächst auf die Montageseite des Substrats aufgesetzt. Dabei überspannt die Haube das Bauelement (oder mehrere Bauelemente) . Die Kontaktflächen der Kontaktierungsstruktur mit dem Substrat liegen dabei innerhalb eines ersten Fügelevels, der durch die Montageseite des Substrats zur Verfügung gestellt wird. Mit diesen Kontaktflächen wird das Substrat elektrisch leitend verbunden. Auf der Innenseite der Haube befinden sich weitere Kontaktflächen der Kontaktierungsstruk- tur, wobei diese innerhalb eines zweiten Fügelevels auf Höhe der Oberseite des Bauelements mit dort befindlichen Kontakten des Bauelements in Eingriff gelangen. Auf diesem Wege schafft die Kontaktierungsstruktur eine elektrische Verbindung zwischen den Kontaktflächen auf dem Substrat und den Kontaktflä- chen auf der Oberseite des Bauelements, wobei die beiden Fügelevel überbrückt werden. This object is achieved according to the invention with the method specified in the introduction, that the contacting structure is integrated in the form of guide paths in a hood. This hood is made of a thermally softenable or thermally curable material. During assembly, the hood is first placed on the mounting side of the substrate. The hood spans the component (or several components). The contact surfaces of the contacting structure with the substrate lie within a first level of furring, which is provided by the mounting side of the substrate. With these contact surfaces, the substrate is electrically connected. On the inside of the hood there are further contact surfaces of the Kontaktierungsstruk- tur, which reach within a second Fügelevels at the level of the top of the device with there located contacts of the device in engagement. In this way, the contacting structure creates an electrical connection between the contact surfaces on the substrate and the contact surfaces on the upper side of the component, wherein the two Fügelevel be bridged.
Erfindungsgemäß ist außerdem vorgesehen, dass das Material der Haube bei der Montage zumindest in den Erweichungsbereich (im Falle des Bestehens der Haube aus einem thermisch erweichbaren Material) oder in den Aushärtungsbereich (im Falle des Bestehens der Haube aus einem thermisch aushärtbaren Material) erwärmt wird. Dies hat den Vorteil, dass das Material der Haube während des Montagevorgangs in Grenzen plastisch verformbar wird. Treten bei der Montage Toleranzen auf, können diese damit zuverlässig überbrückt werden. Dies verringert die erforderliche Montagegenauigkeit bzw. vergrößert die zulässigen Fertigungstoleranzen der Fügepartner. Daher wird das Montageverfahren vorteilhaft vereinfacht. According to the invention, it is also provided that the material of the hood during assembly at least in the softening region (in the case of the existence of the hood of a thermally softenable material) or in the curing area (in the case of the existence of the hood of a thermally curable material) is heated. This has the advantage that the material the hood is plastically deformable within the assembly process within limits. If tolerances occur during assembly, they can be reliably bridged. This reduces the required mounting accuracy and increases the allowable manufacturing tolerances of the joining partners. Therefore, the mounting method is advantageously simplified.
Der Erweichungsbereich bzw. der Aushärtungsbereich ist durch einen Temperaturbereich gekennzeichnet, in dem die Erweichung in dem für das Montageverfahren zulässigen Maße bzw. die Aushärtung des Materials erfolgt. Während der Montage, also dem Aufsetzen der Haube auf das Substrat, ist für eine entsprechende Temperaturführung im Montageprozess zu sorgen, damit das plastisch verformbare Verhalten der Haube erzeugt wird. The softening area or the curing area is characterized by a temperature range in which the softening takes place in the dimensions permissible for the assembly process or the hardening of the material. During assembly, ie placing the hood on the substrate, it is necessary to ensure a corresponding temperature control in the assembly process so that the plastically deformable behavior of the hood is generated.
Gemäß einer Ausgestaltung der Erfindung ist vorgesehen, dass das Substrat, das Bauelement und die Haube mit der Kontaktie- rungsstruktur zuerst in der zu erzeugenden Konfiguration zueinander platziert werden. Erst danach sollen die Fügeverbin- düngen, insbesondere elektrische Verbindungen, am Bauelement innerhalb der mindestens zwei Fügelevel in ein und demselben Arbeitsgang durch eine Temperaturerhöhung oder eine Temperatur- und Druckerhöhung fertiggestellt werden. Gemäß der Erfindung ist mit anderen Worten vorgesehen, dass das Verfahren zur Montage der elektronischen Baugruppe auf dem Substrat in zwei definierten Prozessabschnitten ablaufen soll. Im ersten Prozessabschnitt werden alle zu montierenden Bauteile der durch das Substrat zur Verfügung gestellten Baugruppe zueinander platziert. Hierbei kommt es auch zur Ausbildung der Fügeverbindungen, die allerdings noch nicht fertiggestellt sind. In der zweiten Fertigungsphase werden die Fügeverbindungen fertiggestellt. Hierzu ist die Anwendung eines geeigneten Fügeverfahrens notwendig, wobei je nach Art der herzustellenden mechanischen Verbindungen eine Temperaturerhöhung (beispielsweise beim Löten) oder eine Temperatur- und Druckerhöhung (beispielsweise beim Diffusionslöten oder beim Sintern) erforderlich ist. Vorteilhaft ist vorgesehen, dass diese Fügeverbindungen in einem Arbeitsgang hergestellt wer- den können. Hierzu ist es erforderlich, alle zu erzeugenden Fügeverbindungen auf die bei diesem einzigen Arbeitsgang eingestellten Prozessparameter auszulegen. Hierbei wird ein bestimmtes Temperaturniveau erreicht. Außerdem kann zumindest auf einen Teil der Verbindungen zusätzlich ein Druck ausgeübt werden. Die jeweils gewählte Verbindungsart sowie evtl. notwendiges Zusatzmaterial muss nicht notwendigerweise bei allen Fügeverbindungen genau gleich sein. Wesentlich ist lediglich, dass die Prozessparameter bei allen Verbindungsarten und Ma- terialien aufeinander abgestimmt sind und auf diese Weise die gleichzeitige Ausbildung aller Fügeverbindungen in einem Arbeitsgang möglich ist. According to one embodiment of the invention, it is provided that the substrate, the component and the hood with the contacting structure are first placed in relation to each other in the configuration to be produced. Only then should the joining compounds, in particular electrical connections, be completed on the component within the at least two levels in one and the same operation by increasing the temperature or increasing the temperature and pressure. In other words, according to the invention, the method for mounting the electronic module on the substrate is to take place in two defined process sections. In the first process section, all components to be assembled of the assembly provided by the substrate are placed relative to one another. This also leads to the formation of the joint connections, which are not yet completed. In the second production phase, the joints are completed. For this purpose, the application of a suitable joining method is necessary, depending on the type of mechanical connections to be made a temperature increase (for example, during soldering) or a temperature and pressure increase (for example, in diffusion soldering or sintering) is required. It is advantageously provided that these joint connections are produced in one operation. you can. For this purpose, it is necessary to design all joints to be produced on the process parameters set in this single operation. Here, a certain temperature level is reached. In addition, at least a portion of the compounds additionally pressure can be exercised. The particular type of connection and possibly necessary additional material do not necessarily have to be exactly the same for all joint connections. All that is essential is that the process parameters for all types of connection and materials are matched to one another and in this way the simultaneous formation of all joints in a single operation is possible.
Durch die gleichzeitige Ausbildung aller Fügeverbindungen wird es vorteilhaft insbesondere auch möglich, Kontaktie- rungsstrukturen zu montieren, deren insbesondere elektrischen Verbindungen auf unterschiedlichen Fügeleveln liegen. Hierbei können diese Fügelevel überbrückt werden, ohne dass ein zusätzlicher Arbeitsgang zur Ausbildung der Fügeverbindungen notwendig würde. Vorteilhaft gelingt dies, indem die Unterseite des Bauelements innerhalb eines ersten Fügelevels liegt, der durch eine Montageseite des Substrates zur Verfügung gestellt wird und die Oberseite des Bauelements innerhalb eines zweiten Fügelevels liegt. Der erste Fügelevel wird durch die Ebene definiert, die gewöhnlich durch das Substrat zur Verfügung gestellt wird. Auf dieser Ebene (die bei nicht ebenen Substraten, wie beispielsweise Gehäusen, nicht zwangsläufig im mathematischen Sinne eben sein muss) liegt die Gruppe elektrischer Verbindungen, mit denen jeweils die Un- terseite der elektrischen Bauelemente auf dem Substrat kontaktiert wird. Die Oberseite der Bauelemente definiert dann, sofern diese elektrische Kontaktflächen aufweisen, einen zweiten Fügelevel, der durch die räumliche Höhenausdehnung der elektrischen Bauelemente von dem ersten Fügelevel Due to the simultaneous design of all joint connections, it is advantageously also possible in particular to mount contacting structures whose particular electrical connections lie at different levels. This Fügelevel can be bridged without an additional operation would be necessary to form the joints. Advantageously, this is achieved by the bottom of the device is within a first Fügelevels, which is provided by a mounting side of the substrate and the top of the device is within a second Fügelevels. The first level of skimming is defined by the plane that is usually provided by the substrate. At this level (which in the case of non-flat substrates, such as housings, for example, does not necessarily have to be flat in the mathematical sense) lies the group of electrical connections with which the underside of the electrical components on the substrate is contacted in each case. The top of the components then defines, if they have electrical contact surfaces, a second Fügelevel, by the spatial height extent of the electrical components of the first Fügelevel
beabstandet ist. Durch unterschiedliche Höhen der elektrischen Bauelemente kann es sein, dass der zweite Fügelevel nicht in einer Ebene liegt, wobei die Summe aller Kontaktflächen auf der jeweiligen Oberseite von Bauelementen diesen Fü- gelevel definiert. is spaced. Due to different heights of the electrical components, it may be that the second level Fügel is not in a plane, the sum of all contact surfaces on the respective top of components this Fü- level defined.
Werden mehrere elektrische Bauelemente aufeinander gestapelt, so entstehen dementsprechend in jeder "Etage" des Stapels weitere Fügelevel, die beim elektrischen Anschluss durch entsprechende Kontaktstrukturen evtl. überbrückt werden müssen. Die Anordnung der elektrischen Bauelemente derart, dass ihre Kontakte jeweils unterschiedlichen Fügeleveln zugeordnet werden können, erleichtert vorteilhaft die Montage der elektri- sehen Baugruppe, bei der die Bauelemente und Kontaktstrukturen Level für Level vormontiert werden können (d. h. zueinander platziert werden können) , um anschließend die vorzugsweise elektrischen Verbindungen in allen Fügeleveln in einem Arbeitsgang herzustellen. If several electrical components are stacked on top of each other, then each level of the stack results in further levels of conduction, which possibly have to be bridged by appropriate contact structures during electrical connection. The arrangement of the electrical components such that their contacts can be assigned in each case to different pad levels advantageously facilitates the assembly of the electrical module, in which the components and contact structures can be preassembled level by level (ie, can be placed relative to one another), in order subsequently to connect the modules preferably to produce electrical connections in all levels Fügeleveln in one operation.
Gemäß einer besonderen Ausgestaltung der Erfindung ist vorgesehen, dass das Erweichen oder Aushärten der Haube und das Fertigstellen der Fügeverbindungen in ein und demselben Arbeitsgang unter gleichen Bedingungen erfolgt. Hierbei ist es vorteilhaft, wenn der Temperaturbereich des Erweichungsbereichs bzw. Aushärtungsbereichs sich mit dem Temperaturbereich für das Fertigstellen der Fügeverbindungen zumindest überschneidet. In diesem Fall lässt sich eine Temperatur für die Montage finden, bei der gleichzeitig die Fertigstellung der Fügeverbindungen und das Aushärten bzw. Erweichen derAccording to a particular embodiment of the invention, it is provided that the softening or curing of the hood and the completion of the joints in one and the same operation is carried out under the same conditions. In this case, it is advantageous if the temperature range of the softening area or hardening area at least overlaps with the temperature range for the completion of the joining connections. In this case, a temperature can be found for the assembly, at the same time the completion of the joints and the hardening or softening of
Haube stattfinden kann. Das Aushärten bzw. Erweichen der Haube und das Fertigstellen der Fügeverbindungen können aber auch nacheinander in demselben Arbeitsgang durchgeführt werden . Hood can take place. However, the hardening or softening of the hood and the completion of the joint connections can also be carried out successively in the same operation.
Außerdem muss das Material der Haube einer plastischen Verformung einen genügenden Widerstand entgegensetzen, damit evtl. bei dem Fertigstellen der Fügeverbindung ein Druck aufgebaut werden kann, der im Falle der Herstellung von Sinter- Verbindungen oder Diffusionslötverbindungen an den elektrischen Kontakten erforderlich sein kann. Dieser Druck kann aufgebaut werden, indem während der plastischen Verformung gleichzeitig ein Anteil einer elastischen Verformung in dem Material der Haube entsteht. Im Folgenden werden Beispiele für Materialpaarungen für die Fügeverbindungen einerseits und die Haube andererseits angegeben, welche die oben stehenden Bedingungen erfüllen. In addition, the material of the hood of a plastic deformation must oppose a sufficient resistance, so that possibly at the completion of the joint connection, a pressure can be built up, which may be required in the case of the production of sintered connections or Diffusionslötverbindungen to the electrical contacts. This pressure can be built up by simultaneously contributing, during plastic deformation, a proportion of elastic deformation in the mold Material of the hood is created. In the following, examples of material pairings for the joint connections on the one hand and the hood on the other hand are given, which meet the above conditions.
Sinterverbindungen : Sintered connections:
Silber-Sinterpaste (z.B. Heraeus mAgic Paste, Microbond ASP Serie) mit einem Temperaturbereich von 200 - 280°C Diffusionslötverbindungen:  Silver sintered paste (e.g., Heraeus mAgic Paste, Microbond ASP series) with a temperature range of 200-280 ° C.
Materialsystem SnCu, SnAg, SnNi und weitere Materialsysteme, die hochschmelzende intermetallische Phasen bilden können. Dabei können verschiedene Formulierungen verwendet werden, wie zum Beispiel  Material system SnCu, SnAg, SnNi and other material systems that can form refractory intermetallic phases. Various formulations may be used, such as
- Einpastensysteme mit in der Grundmatrix aus niedrigschmelzenden Legierungen (wie SnCu) dispergierten hochschmelzenden Partikeln (z.B. Cu) , Single ply systems with refractory particles (e.g., Cu) dispersed in the base matrix of low melting alloys (such as SnCu),
- Zweipastensysteme mit sequentiellen Auftragsmethoden - two-ply systems with sequential order methods
(hochschmelzendes Cu gefolgt von SnCu-Legierung) oder - Methoden, den niedrigschmelzenden Zusatzwerkstoff (z.B.  (refractory Cu followed by SnCu alloy) or methods, the low melting filler (e.g.
SnCu-Legierung) zwischen die hochschmelzenden Grenzflächen (z.B. Cu) zu applizieren, wobei unter Prozessbedingungen durch diffusive Konzentrationsänderungen die hochschmelzende Fügezone generiert wird.  SnCu alloy) between the refractory interfaces (e.g., Cu), whereby under process conditions by diffusive concentration changes, the refractory joining zone is generated.
Thermisch aushärtbares Haubenmaterial: Thermally curable hood material:
Prepreg Material (z.B. Isola Duraver-E-Cu Qualität 104 ML) mit einem Temperaturmaximum von 230°C Thermisch erweichbares Haubenmaterial:  Prepreg material (eg Isola Duraver-E-Cu quality 104 ML) with a maximum temperature of 230 ° C Thermally softenable hood material:
Als Beispiele sind hier thermoplastische Werkstoffe wie  As examples here are thermoplastic materials such
Polyethylenterephthalate (PET) , modifizierte Polyethylene terephthalate (PET), modified
Polyetheretherketone (PEEK) (bei erhöhten Fügetemperaturen) , Polyamide und Polyphthalamide (PPA) . Polyetheretherketones (PEEK) (at elevated bonding temperatures), polyamides and polyphthalamides (PPA).
Gemäß einer weiteren Ausgestaltung der Erfindung ist vorgesehen, dass das Substrat mit seiner der Montageseite abgekehrten Rückseite eine Kontaktfläche zur Verfügung stellt, mit der ein dritter Fügelevel zur Verfügung gestellt wird. Innerhalb dieses Fügelevels wird ein Bauteil platziert. Anschließend wird in der erfindungsgemäßen Weise eine Verbindung zwischen dem Bauteil und dem Substrat in genau dem Arbeitsgang durch eine Temperaturerhöhung oder eine Temperatur- und Druckerhöhung fertiggestellt, in dem auch die Fügeverbindungen am elektrischen Bauelement in dem ersten Fügelevel und dem zweiten Fügelevel (und evtl. weiteren Fügeleveln) fertiggestellt werden. Hierdurch ist vorteilhaft eine weitere Verein- fachung des Montageverfahrens möglich. Je mehr unterschiedliche Fügelevel in einem Arbeitsgang bei der Fertigstellung der Verbindungen berücksichtigt werden können, desto größer ist die Vereinfachung des Montageprozesses, was sich letztendlich auch vorteilhaft auf dessen Wirtschaftlichkeit auswirkt. According to a further embodiment of the invention, it is provided that the substrate with its side facing away from the mounting side provides a contact surface, with a third level is provided. Within this level, a component is placed. Subsequently, in the manner according to the invention, a connection between the component and the substrate in exactly the operation by a temperature increase or a temperature and pressure increase completed, in which the joints on the electrical component in the first Fuellevel and the second Fügelevel (and possibly further Fill levels). This advantageously makes further simplification of the assembly process possible. The more different levels of friction can be taken into account in a single operation in the completion of the compounds, the greater the simplification of the assembly process, which ultimately also has an advantageous effect on its efficiency.
Bei dem Bauteil, welches auf der Rückseite des Substrats montiert wird, kann es sich beispielsweise um einen Kühlkörper handeln, der bei leistungselektronischen Baugruppen zu einer Abführung der Verlustwärme dient . Dieser Kühlkörper kann auch als Grundkörper ausgebildet sein, wobei dieser zur gemeinsamen Montage von mehreren elektronischen Baugruppen zur Verfügung steht. Eine andere Möglichkeit besteht darin, das Substrat beidseitig mit elektrischen Bauelementen zu bestücken. Eine Kühlung könnte in diesem Fall beispielsweise durch Kühl- kanäle im Substrat erfolgen. The component, which is mounted on the back of the substrate, may be, for example, a heat sink, which is used in power electronic assemblies to dissipate the heat loss. This heat sink can also be designed as a base body, wherein this is available for common assembly of several electronic assemblies available. Another possibility is to equip the substrate with electrical components on both sides. In this case, cooling could take place, for example, through cooling channels in the substrate.
Gemäß einer besonderen Ausgestaltung der Erfindung ist vorgesehen, dass alle Fügeverbindungen mit ein und demselben Fügeverfahren fertiggestellt werden. Wie bereits erwähnt, ist es ebenso möglich, unterschiedliche Fügeverfahren für die einzelnen Fügeverbindungen auszuwählen. Jedoch muss die Bedingung erfüllt sein, dass die verschiedenen ausgewählten Fügeverfahren unter den vorgegebenen Prozessbedingungen (Druck, Temperatur) durchgeführt werden können. Insbesondere die Tem- peratur muss über die gesamte zu montierende elektrische Baugruppe gleich sein. Der Druck kann variieren, indem beispielsweise mehrere Fügewerkzeuge zum Einsatz kommen oder ein Fügewerkzeug vorgesehen wird, bei dem beispielsweise durch Federmechanismen mit unterschiedlicher Federsteifigkeit unterschiedliche Fertigungsdrücke an unterschiedlichen Komponenten des zu fügenden Auf aus angelegt werden. Auch für den Fall, dass alle Fügeverbindungen mit ein und demselben Füge- verfahren fertiggestellt werden, gelten diese Bedingungen.According to a particular embodiment of the invention, it is provided that all joint connections are completed with one and the same joining method. As already mentioned, it is also possible to select different joining methods for the individual joint connections. However, the condition must be fulfilled that the various selected joining methods can be carried out under the given process conditions (pressure, temperature). In particular, the temperature must be the same over the entire electrical assembly to be mounted. The pressure can vary, for example, by using a plurality of joining tools or a joining tool is provided, in which, for example, by Spring mechanisms with different spring stiffness different manufacturing pressures are applied to different components of the mating Auf from. Even in the event that all joint connections are completed with one and the same joining method, these conditions apply.
Besonders vorteilhaft kann bei dem ausgewählten Fügeverfahren (insbesondere Diffusionslöten oder Sintern) auch derselbe Zusatzwerkstoff ausgewählt werden, so dass die Fertigungsbedingungen für das Fügeverfahren für die gesamte Baugruppe ein- heitlich sind. Es ist aber auch möglich, unterschiedliche Zusatzwerkstoffe auszuwählen, soweit diese in der oben erläuterten Weise unter den vorgegebenen Fügebedingungen fertiggestellt werden können. Gemäß einer anderen Ausgestaltung der Erfindung ist vorgesehen, dass neben den Fügeverbindungen auch die Verbindung zwischen dem Bauteil (beispielsweise dem Kühlkörper) und dem Substrat (auf der Rückseite) mit dem ausgewählten Fügeverfahren fertiggestellt werden. Hiermit können die erläuterten Vorteile auch auf das Fügen der Verbindung zwischen dem Bauteil und dem Substrat ausgeweitet werden, die sich in einem Arbeitsgang zusammen mit den Fügeverbindungen auf der Montageseite des Substrats fertigstellen lassen. Natürlich können auch die Verbindungen auf der Rückseite des Substrats elekt- rische Verbindungen sein, wenn das Bauteil, welches dort montiert wird, ein elektrisches Bauteil ist. Particularly advantageously, in the selected joining method (in particular diffusion soldering or sintering), the same filler material can also be selected, so that the production conditions for the joining method are uniform for the entire assembly. But it is also possible to select different filler materials, as far as they can be completed in the manner explained above under the predetermined joining conditions. According to another embodiment of the invention, it is provided that in addition to the joint connections and the connection between the component (for example, the heat sink) and the substrate (on the back) are completed with the selected joining method. Hereby, the explained advantages can also be extended to the joining of the connection between the component and the substrate, which can be completed in one operation together with the joining connections on the mounting side of the substrate. Of course, the connections on the back side of the substrate can also be electrical connections if the component which is mounted there is an electrical component.
Eine wieder andere Ausgestaltung der Erfindung sieht vor, dass als Fügeverfahren ein Diffusionslöten oder ein Sintern zum Einsatz kommt. Diese Verfahren eignen sich vorteilhaft in besonderer Weise, wenn Leistungselektronik montiert werden soll, da die ausgebildeten Verbindungen eine geringe Fehlerdichte aufweisen und eine hohe thermische Stabilität besitzen. Das Diffusionslöten hat einen mit dem Sintern verwandten Verfahrensablauf. Ein Zusatzwerkstoff wird in den Bereich zwischen den zu fügenden Bauteilen eingebracht, wobei dieser unter der Einwirkung von Temperatur und ggf. erhöhtem Druck zu einer Diffusion von niedrigschmelzenden und hochschmelzen- den Legierungskomponenten beiträgt. Durch diese lokalen Konzentrationsänderungen kommt es in der Fügezone und an deren Grenzflächen zu den benachbarten Bauteilen zur Generierung von hochschmelzenden intermetallischen Phasen, die eine hohe Temperaturstabilität besitzen. Die entstehende Verbindung hat sehr hohe elektrische und thermische Leitfähigkeiten sowie hohe mechanische Festigkeiten. Yet another embodiment of the invention provides that a diffusion soldering or sintering is used as the joining method. These methods are advantageous in a special way when power electronics are to be mounted, since the formed connections have a low defect density and have a high thermal stability. Diffusion soldering has a process related to sintering. An additional material is introduced into the area between the components to be joined, whereby the latter, under the influence of temperature and optionally elevated pressure, leads to a diffusion of low-melting and high-melting contributes to the alloying components. These local changes in concentration occur in the joining zone and at their interfaces to the adjacent components for generating high-melting intermetallic phases, which have a high temperature stability. The resulting compound has very high electrical and thermal conductivities as well as high mechanical strengths.
Weiterhin kann vorteilhaft vorgesehen werden, dass vor dem Platzieren in der zu erzeugenden Konfiguration auf das Substrat und/oder das Bauelement und/oder die Kontaktierungs- struktur in der Haube und/oder das Bauteil ein Zusatzwerkstoff aufgebracht wird. Wie bereits erwähnt, können diese Zusatzwerkstoffe das Fügen, beispielsweise das Sintern oder das Diffusionslöten erleichtern. Die für die Sintervorgänge bzw. Diffusionsvorgänge verantwortlichen Verbindungsbestandteile können allerdings auch in die Kontaktflächen für die auszubildende Verbindung enthalten sein. Beim klassischen Löten ist allerdings als Zusatzwerkstoff immer ein Lotwerkstoff er- forderlich. Furthermore, it can be advantageously provided that a filler material is applied to the substrate and / or the component and / or the contacting structure in the hood and / or the component before placing it in the configuration to be produced. As already mentioned, these filler materials can facilitate joining, for example, sintering or diffusion soldering. However, the connection components responsible for the sintering processes or diffusion processes can also be contained in the contact surfaces for the compound to be formed. In classical soldering, however, a filler material is always required as filler material.
Eine andere Ausgestaltung der Erfindung sieht vor, dass die Haube außen eine ebene Fläche aufweist, die parallel zum Substrat verläuft. Dies hat große Vorteile für den Ablauf des Montageverfahrens, welcher dadurch vereinfacht wird. Eine ebene Fläche erlaubt nämlich das einfache Aufsetzen eines Fügewerkzeugs, mit dem der Druck auf die zu montierende Baugruppe ausgeübt werden kann. Über dieses Werkzeug lässt sich im Übrigen auch die erforderliche Prozesswärme einbringen, wenn dieses erwärmt wird. Die Übertragung der Prozesswärme auf die zu fügenden Bauteile, insbesondere die Haube, wird ebenfalls verbessert, wenn eine ebene Fläche zur Verfügung steht, die sich insbesondere über die gesamte Flächenausdehnung der Haube erstreckt. Ein weiterer Vorteil besteht darin, dass das Fügewerkzeug geometrisch nicht an die Haube ange- passt werden muss. Das Fügewerkzeug kann standardmäßig mit einer ebenen Fläche zur Druckausübung ausgestattet sein, wobei grundsätzlich Hauben unterschiedlicher Anwendungsfalle , also beispielsweise mit unterschiedlicher Größe oder mit unterschiedlicher Strukturierung der Innenseite, mit ein und demselben Fügewerkzeug montiert werden können. Besonders vorteilhaft ist es, wenn als aushärtbares Material ein Prepreg verwendet wird. Diese Materialien kann man als Halbzeuge beziehen und auf diesem Wege ohne großen Fertigungsaufwand Hauben unterschiedlicher Struktur anfertigen. Als Prepreg werden Verbundmaterialien aus Fasern und einer Matrix aus noch nicht vollständig ausgehärtetem, vorzugsweise duroplastischem, Harz verstanden. Das Harz kann allerdings teilweise ausgehärtet sein, um die mechanische Stabilität und die Verarbeitungseigenschaften des Prepregs zu verbessern. Eine endgültige Aushärtung erfolgt dann, wie bereits erläu- tert, im Rahmen der Montage der Haube. Another embodiment of the invention provides that the hood outside has a flat surface which is parallel to the substrate. This has great advantages for the expiration of the assembly process, which is thereby simplified. Namely, a flat surface allows the simple placement of a joining tool, with which the pressure on the assembly to be mounted can be exercised. Incidentally, this tool can also provide the required process heat when it is heated. The transfer of process heat to the components to be joined, in particular the hood, is also improved if a flat surface is available, which extends in particular over the entire surface extent of the hood. Another advantage is that the joining tool does not have to be geometrically adapted to the hood. The joining tool can be equipped as standard with a flat surface for applying pressure, with basically hoods of different application cases, Thus, for example, with different size or with different structuring of the inside, can be mounted with one and the same joining tool. It is particularly advantageous if a prepreg is used as the hardenable material. These materials can be obtained as semi-finished products and in this way make hoods of different structure without great manufacturing effort. As prepreg, composite materials of fibers and a matrix of not completely cured, preferably thermosetting, resin understood. However, the resin may be partially cured to improve the mechanical stability and processing characteristics of the prepreg. Final curing then takes place, as already explained, during the assembly of the hood.
Zur Herstellung der Haube können beispielsweise Prepregs von Isola Duraver-E-Cu verwendet werden. Diese werden dann in geeigneter Weise zugeschnitten und in Schichten übereinanderge- legt, wobei eine geschichtete dreidimensionale Struktur entsteht. Die Kontaktierungsstruktur kann ebenfalls aus Schichtmaterial, beispielsweise Metallfolien, oder aber einem Lead- frame ausgebildet werden. Diese metallischen Strukturen werden dann in den Schichtverbund integriert und durch das Aus- härten des Haubenmaterials in dieses eingebettet. To prepare the hood, prepregs from Isola Duraver-E-Cu, for example, can be used. These are then cut to size and layered to form a layered three-dimensional structure. The contacting structure can likewise be formed from layer material, for example metal foils, or else a leadframe. These metallic structures are then integrated into the layer composite and embedded in the latter by the hardening of the hood material.
Gemäß einer weiteren Ausgestaltung der Erfindung kann vorgesehen werden, dass als thermisch erweichbares Material ein Phasenwechselmaterial (auch phase change material genannt) Verwendung findet. Als Phasenwechselmaterialien sind Materialien zu verstehen, deren latente Schmelzwärme, Lösungswärme oder Absorptionswärme größer ist als die Wärme, die diese Materialien aufgrund ihrer spezifischen Wärmekapazität, also ohne Phasenumwandlungseffekt, speichern können. Diese Materi- alien werden hinsichtlich ihres Phasenwechselverhaltens so ausgewählt, dass dieser Phasenwechsel im geplanten Betrieb der elektronischen Baugruppe zumindest in bestimmten Be- triebszuständen erreicht wird. Auf diese Weise kann sicherge- stellt werden, dass die Haube beispielsweise beim Überlastbetrieb von leistungselektronischen Komponenten eine Kühlungsreserve zur Verfügung stellt, indem durch die Erwärmung ein Phasenwechsel des Phasenwechselmaterials erzwungen wird. Die- se Temperatur eines Phasenwechsels während des späteren Betriebs der Baugruppe liegt in jedem Fall unter derjenigen Temperatur, bei der die Haube erweicht. Diese Erweichung würde ansonsten auch im Betrieb erfolgen und würde daher die Funktion der Baugruppe gefährden. Ein solches Phasenwechsel - material kann daher nicht alleine die Haube bilden, sondern muss in ein weiteres Material der Haube eingebunden sein. Beispielsweise könnte dies in Form eines mit dem Phasenwech- selmaterial gefüllten Kissens erfolgen, wobei dieses in das restliche Material der Haube eingebettet wird. Allerdings lässt sich das Phasenwechselmaterial während der Montage aufgrund eines Vorliegens in der flüssigen Phase als Toleranzausgleich verwenden und lässt sich in diesem Zustand auch plastisch verformen. Daher kann das Montageverfahren von dem Einsatz des Phasenwechselmaterials profitieren, auch wenn de- ren Eigenschaften hauptsächlich für den späteren Betrieb der Baugruppe von Bedeutung sind. According to a further embodiment of the invention can be provided that as a thermally softenable material, a phase change material (also called phase change material) is used. As phase change materials are materials whose latent heat of fusion, solution heat or heat of absorption is greater than the heat that can store these materials due to their specific heat capacity, ie without phase change effect. With regard to their phase change behavior, these materials are selected such that this phase change is achieved in the planned operation of the electronic module, at least in certain operating states. In this way, it is possible to ensure be made that the hood, for example, provides a cooling reserve available in the overload operation of power electronic components by a phase change of the phase change material is forced by the heating. This temperature of a phase change during the later operation of the assembly is in any case below the temperature at which the hood softens. Otherwise, this softening would also occur during operation and would therefore jeopardize the function of the assembly. Such a phase change material can therefore not form the hood alone, but must be incorporated into another material of the hood. For example, this could take the form of a pad filled with the phase change material, this being embedded in the remaining material of the hood. However, the phase change material can be used during assembly due to a presence in the liquid phase as tolerance compensation and can be plastically deformed in this state. Therefore, the assembly process can benefit from the use of the phase change material, even if their properties are mainly important for the later operation of the assembly.
Die Erfindung wird weiterhin mit der eingangs angegebenen Haube erfindungsgemäß dadurch gelöst, dass eine Kontaktie- rungsstruktur in Form von Leitpfaden in eine Haube integriert ist. Die Haube selbst besteht aus einem thermisch erweichbaren oder thermisch aushärtbaren Material. Die Kontaktierungs- struktur auf der Innenseite der Haube weist Kontaktflächen auf, die zur elektrischen Verbindung auf dem Substrat und an dem Bauelement dienen. Die Kontaktierungsstruktur verläuft dabei auf der Innenseite der Haube, wobei diese derart verläuft, dass die Kontaktflächen auf verschiedenen Niveaus angeordnet sind, die bei der späteren Montage die Fügelevel definieren. Einer dieser Fügelevel wird, wie bereits erläutert, durch die Oberfläche des Substrats zur Verfügung gestellt.The invention is further achieved with the hood mentioned above according to the invention in that a contacting structure is integrated in the form of guide paths in a hood. The hood itself consists of a thermally softenable or thermally curable material. The contacting structure on the inside of the hood has contact surfaces which serve for electrical connection to the substrate and to the component. The contacting structure extends on the inside of the hood, wherein this extends such that the contact surfaces are arranged at different levels, which define the Fügelevel in the subsequent assembly. As already explained, one of these levels is provided by the surface of the substrate.
Ein anderer Fügelevel ist durch die Oberseite des Bauelements definiert, wo Kontaktflächen zur Kontaktierung mit der Kontaktierungsstruktur zur Verfügung stehen. Gemäß einer vorteilhaften Ausgestaltung der Erfindung ist die Haube in Sandwichbauweise ausgeführt. Dabei bilden erfindungsgemäß sowohl das thermisch erweichbare oder thermisch aushärtbare Material als auch die Kontaktierungsstruktur Lagen in dem Sandwich. Diese Lagen können, wie bereits erläutert, aus einer thermoplastischen Kunststofffolie oder einem aushärtbaren Prepreg bestehen, während die Kontaktierungsstruktur beispielsweise durch eine Metallfolie oder einen Leadframe gebildet werden kann. Die Halbzeuge sind somit im Wesentlichen zweidimensional und können für die Herstellung der Haube in geeigneter Weise zugeschnitten werden. Durch Stapeln der einzelnen Lagen entsteht die dreidimensionale Struktur der Haube. Another level of skimming is defined by the top of the device where pads are available for contacting the contacting structure. According to an advantageous embodiment of the invention, the hood is designed in sandwich construction. According to the invention, both the thermally softenable or thermally curable material and the contacting structure form layers in the sandwich. These layers may, as already explained, consist of a thermoplastic film or a thermosetting prepreg, while the contacting structure may be formed for example by a metal foil or a leadframe. The semi-finished products are thus essentially two-dimensional and can be tailored to make the hood in a suitable manner. By stacking the individual layers creates the three-dimensional structure of the hood.
Besonders vorteilhaft ist es, wenn in der Haube auf die Kontaktflächen der Kontaktierungsstruktur ein Zusatzwerkstoff aufgebracht ist. Hierbei kann es sich, wie bereits erläutert, um ein Hochtemperaturlot, ein Diffusionslot oder ein Sinter- material handeln. Diese Zusatzwerkstoffe stehen dann nachIt is particularly advantageous if an additional material is applied to the contact surfaces of the contacting structure in the hood. As already explained, this may be a high-temperature solder, a diffusion solder or a sintered material. These filler materials then become weaker
Montage der Haube auf der Baugruppe zur Ausbildung der Füge- verbindungen zur Verfügung. Ein Fügen kann in der oben bereits erläuterten Weise erfolgen. Vorteilhaft ist es auch, wenn die Stützfläche durch einen Rand der Haube gebildet ist. Die Haube wird dann mit ihrem Rand auf das Substrat aufgesetzt. Sofern der Rand umlaufend ist, entsteht beim Aufsetzen der Haube auf das Substrat eine geschlossene Kavität, die vorteilhaft einen Schutz der Bau- gruppe gegen Verschmutzung und andere Umwelteinflüsse gewährleistet. Auf dem Rand der Haube können im Übrigen auch die Kontaktflächen bzw. die mit dem Zusatzwerkstoff versehenen Kontaktflächen vorgesehen werden, da hierdurch eine Kontak- tierung der Kontaktierungsstruktur mit dem Substrat erfolgen kann . Assembly of the hood on the module for forming the joint connections available. Joining can be done in the manner already explained above. It is also advantageous if the support surface is formed by an edge of the hood. The hood is then placed with its edge on the substrate. If the edge is circumferential, when the cap is placed on the substrate, a closed cavity is produced which advantageously protects the assembly against dirt and other environmental influences. Incidentally, the contact surfaces or the contact surfaces provided with the additional material can also be provided on the edge of the hood since this can be used to contact the contacting structure with the substrate.
Außerdem ist es besonders vorteilhaft, wenn die Außenseite der Haube eben ist. Dies bringt die bereits erläuterten Vor- teile einer vereinfachten Montage mit sich, da das Fügewerkzeug eine ebene und damit einfache Geometrie aufweisen kann und auch für unterschiedliche Haubengeometrien (mit ebener Außenseite) Verwendung finden kann. Vorteilhaft ist es selbstverständlich, wenn die Außenseite der Haube parallel zur Stützfläche ausgebildet ist, da das Substrat, sofern dieses in waagerechter Positionierung montiert wird, auch durch waagerechtes Aufbringen der Fügewerkzeuge montiert werden kann . Moreover, it is particularly advantageous if the outside of the hood is flat. This brings the already explained Parts of a simplified assembly with it, since the joining tool can have a flat and therefore simple geometry and can also be used for different hood geometries (with a flat outer side) use. It is of course advantageous if the outside of the hood is formed parallel to the support surface, since the substrate, if this is mounted in a horizontal position, can also be mounted by horizontal application of the joining tools.
Als Materialien für das elektrische Bauelement kommen Silizium, Siliziumcarbid, Galliumarsenid oder Galliumnitrid in Betracht. Diese Materialien werden vorzugsweise für leistungselektronische Bauelemente verwendet. Das Substrat kann zum Beispiel aus einer Keramik gefertigt sein. Diese kann mit Kupfer, Silber oder Gold beschichtet sein, wobei die Be- schichtung zur Ausbildung von elektrischen Kontaktflächen und Leiterbahnen strukturiert sein kann. Als Zusatzwerkstoffe können je nach Fügeverfahren Hochtemperaturlote wie Antimon- haltige Legierungen oder konventionelle hoch-bleihaltige Lote, Diffusionslote der Materialsystems Sn-Cu, Sn-Cu-Ni, Sn- Cu-Ag, und vorzugweise silberhaltige Sinterpasten oder Sinterfolien zum Einsatz kommen. Weitere Einzelheiten der Erfindung werden nachfolgend anhand der Zeichnung beschrieben. Gleiche oder sich entsprechende Zeichnungselemente sind jeweils mit den gleichen Bezugszeichen versehen und werden nur insoweit mehrfach erläutert, wie sich Unterschiede zwischen den einzelnen Figuren ergeben. Es zeigen: Suitable materials for the electrical component are silicon, silicon carbide, gallium arsenide or gallium nitride. These materials are preferably used for power electronic devices. The substrate may be made of a ceramic, for example. This can be coated with copper, silver or gold, wherein the coating can be structured to form electrical contact surfaces and conductor tracks. Depending on the joining method, high-temperature solders such as antimony-containing alloys or conventional high-lead solders, diffusion solders of the Sn-Cu, Sn-Cu-Ni, Sn-Cu-Ag, and preferably silver-containing sintering pastes or sintered foils can be used as filler materials. Further details of the invention are described below with reference to the drawing. Identical or corresponding drawing elements are each provided with the same reference numerals and will only be explained several times as far as there are differences between the individual figures. Show it:
Figur 1 ein Ausführungsbeispiel der erfindungsgemäßen Figure 1 shows an embodiment of the invention
Haube im schematischen Querschnitt, wobei es sich hierbei auch um den ersten Schritt eines Ausführungsbeispiels des erfindungsgemäßen Hood in schematic cross section, which is also the first step of an embodiment of the invention
Verfahren handelt, Figur 2 und 3 weiterer Verfahrensschritte dieses Ausführungsbeispiels des erfindungsgemäßen Verfahrens als Seitenansicht, teilweise geschnitten und Method, Figures 2 and 3 further process steps of this embodiment of the method according to the invention as a side view, partially cut and
Figur 4 eine Baugruppe, fertig montiert, mit einer Figure 4 shows an assembly, fully assembled, with a
Haube gemäß einem anderen Ausführungsbeispiel des erfindungsgemäßen Verfahrens im Querschnitt .  Hood according to another embodiment of the method according to the invention in cross section.
In Figur 1 ist eine Haube 11 dargestellt, die gemäß Figur 3 auf ein mit einem elektrischen Bauelement 12 ausgestattetem Substrat 13 aufgesetzt werden kann. Die Haube besteht aus mehreren Lagen, die zusammen eine Sandwichstruktur ergeben. Es sind Lagen 14 aus einem thermisch aushärtbaren Prepreg-FIG. 1 shows a hood 11, which according to FIG. 3 can be placed on a substrate 13 equipped with an electrical component 12. The hood consists of several layers that together form a sandwich structure. There are layers 14 of a thermally curable prepreg
Material vorgesehen, zwischen denen metallische Lagen 15 eine Kontaktierungsstruktur 16 ergeben. Die Kontaktierungsstruktur ist somit in das Material der Haube integriert. An den Enden der Kontaktierungsstruktur 16, die Kontaktflächen zur Kontak- tierung zur Verfügung stellen, ist in diesem Beispiel ein Zusatzwerkstoff in Form eines Diffusionslots vorgesehen. Die Haube weist eine Innenseite 18 und eine Außenseite 19 auf, wobei die Außenseite 19 eben ausgeführt ist, damit ein Fügewerkzeug 20a mit ebener Druckfläche auf die Außenseite 19 der Haube 11 aufgesetzt werden kann (vgl. Figur 3) . Material provided between which metallic layers 15 give a contacting structure 16. The contacting structure is thus integrated into the material of the hood. At the ends of the contacting structure 16, which provide contact surfaces for contacting, an additional material in the form of a diffusion solder is provided in this example. The hood has an inner side 18 and an outer side 19, wherein the outer side 19 is made flat so that a joining tool 20a with a flat pressure surface can be placed on the outer side 19 of the hood 11 (see FIG.
Auf der Innenseite 18 der Haube ist außerdem eine Stützfläche 21 gebildet, die in dem in Figur 1 dargestellten Schnitt durch den Zusatzwerkstoff 17 am äußeren Rand der Haube zur Verfügung gestellt wird. Wo kein Zusatzwerkstoff vorgesehen ist, kann diese Stützfläche 21 auch durch eine weitere Lage (nicht dargestellt) des Prepregs ausgebildet werden. Die Stützfläche dient dazu, in einem weiteren Verfahrensschritt direkt auf das Substrat aufgesetzt werden zu können. Hier- durch kann das Innere der Haube gegenüber der Umgebung abgedichtet werden, so dass im Inneren eine Kavität 22 entsteht (vgl. Figur 3 und 4) . In Figur 2 ist das Substrat 13 zu erkennen, welches eine Montageseite 23 und eine Rückseite 24 aufweist. Hierbei handelt es sich um ein nicht näher dargestelltes DCB-Keramiksubstrat, wobei die Kupferschichten nicht näher dargestellt sind. Auf der Montageseite 23 und auf der Rückseite 24 sind weitere Bereiche mit dem Zusatzwerkstoff 17 versehen, wo später verschiedene Fügepartner montiert werden sollen (vgl. Figur 3) . Die nicht dargestellte Kupferschicht auf der Montageseite 23 ist in geeigneter Weise strukturiert, damit das zu montieren- de Bauelement 12 in geeigneter Weise kontaktiert werden kann. On the inner side 18 of the hood also a support surface 21 is formed, which is provided in the section shown in Figure 1 by the filler material 17 at the outer edge of the hood available. Where no filler material is provided, this support surface 21 can also be formed by a further layer (not shown) of the prepreg. The support surface serves to be placed directly on the substrate in a further process step. As a result, the interior of the hood can be sealed off from the surroundings so that a cavity 22 is formed in the interior (compare FIGS. 3 and 4). FIG. 2 shows the substrate 13, which has a mounting side 23 and a rear side 24. This is a non-illustrated DCB ceramic substrate, wherein the copper layers are not shown in detail. On the mounting side 23 and on the back 24 more areas are provided with the filler material 17, where later different joining partners to be mounted later (see Figure 3). The copper layer, not shown, on the mounting side 23 is structured in a suitable manner, so that the component 12 to be assembled can be contacted in a suitable manner.
In Figur 3 ist dargestellt, wie die zu montierende elektrische Baugruppe ausgebildet ist. Es ist zu erkennen, dass auf der Montageseite 23 des Substrats 13 im Bereich des Zusatz- Werkstoffs (vgl. Figur 2) das Bauelement 12 mit seiner Unterseite 26 auf die Montageseite 23 des Substrats 13 aufgesetzt wurde. Dieses Bauelement 12 weist auf seiner Oberseite 27 nicht näher dargestellte elektrische Kontakte auf. Auf die so gebildete Baugruppe, bestehend aus dem Substrat 13 und dem Bauelement 12, wird die Haube 11 gemäß Figur 1 aufgesetzt, wobei die Kontaktierungsstrukturen 16 mit ihren Enden und dem Zusatzwerkstoff (vgl. Figur 1) auf der Oberseite 27 des Bauelements 12 und der Montageseite 23 des Substrats 13 zu liegen kommen. Hierbei ist zu berücksichtigen, dass die Enden der Kontaktierungsstruktur 16 jeweils auf unterschiedlichen Niveaus liegen, die in Figur 3 als erster Fügelevel 28, vorgegeben durch die Montageseite 23 des Substrats 13, und als zweiter Fügelevel 29, vorgegeben durch Oberseite 27 des Bauelements 12, gekennzeichnet sind. Ein dritter Fügelevel 30 wird durch die Unterseite 24 des Substrats 13 zur Verfügung gestellt. Dieser dient zur Befestigung einer Grundplatte 31, die als Kühlkörper ausgeführt ist und als Bauteil über den Zusatzwerkstoff (vgl. Figur 2) mit der Unterseite 24 des Substrats 13 thermisch leitend verbunden ist. In der Grundplatte 23 können zum Zwecke der Kühlung beispielsweise Kühlkanäle 32 vorgesehen sein. Die Baugruppe gemäß Figur 3 ist nun vormontiert. Das heißt, dass die einzelnen Komponenten (Grundplatte 31, Substrat 13, Bauelement 12, Kontaktierungsstruktur 16) in der zu erzeugenden Konfiguration zueinander platziert wurden. Der Zusatzwerkstoff 17 sorgt dafür, dass diese Konfiguration für Handhabungszwecke im weiteren Verfahren der Fertigung bereits eine genügende Stabilität aufweist. Zu diesem Zwecke können außerdem nicht näher dargestellte Fügehilfen vorhanden sein. Diese können beispielsweise aus externen Werkzeugen, wie beispielsweise Klammern, bestehen. Auch ist es möglich, in die einzelnen Bauteile Fügehilfen, wie beispielsweise Clipverbindungen, zu integrieren (nicht dargestellt) . Die Halterung der einzelnen Komponenten der Baugruppe mittels dieser Fügehilfen ist nur vorläufig bis zur endgültigen Montage der Baugruppe . In Figure 3 is shown how the electrical assembly to be mounted is formed. It can be seen that on the mounting side 23 of the substrate 13 in the area of the additional material (see FIG. 2), the component 12 has been placed with its underside 26 on the mounting side 23 of the substrate 13. This device 12 has on its upper side 27 not shown electrical contacts. The hood 11 according to FIG. 1 is placed on the assembly formed in this way, consisting of the substrate 13 and the component 12, the contacting structures 16 with their ends and the filler material (see FIG. 1) on the upper side 27 of the component 12 and Mounting side 23 of the substrate 13 come to rest. It should be noted that the ends of the contacting structure 16 are each at different levels, in Figure 3 as the first Fügelevel 28, given by the mounting side 23 of the substrate 13, and as a second Fügelevel 29, specified by top 27 of the device 12, characterized are. A third level 30 is provided by the bottom 24 of the substrate 13. This serves to fasten a base plate 31, which is designed as a heat sink and as a component via the filler material (see Figure 2) with the bottom 24 of the substrate 13 is thermally conductively connected. In the base plate 23, for example, cooling channels 32 may be provided for the purpose of cooling. The assembly according to FIG. 3 is now preassembled. This means that the individual components (base plate 31, substrate 13, component 12, contacting structure 16) in of the configuration to be created have been placed to each other. The additional material 17 ensures that this configuration for handling purposes already has sufficient stability in the further manufacturing process. For this purpose, also not shown mating aids may be present. These may for example consist of external tools, such as brackets. It is also possible to integrate in the individual components joining aids, such as clip connections (not shown). The mounting of the individual components of the assembly by means of these mating aids is only temporary until the final assembly of the module.
Gemäß Figur 3 sind die beiden Lagen 15 aus Metall innerhalb der unteren Lage 14 des Prepregs ebenfalls über ein Formstück des Zusatzwerkstoffs (vgl. Figur 1) verbunden. Dies hat den Vorteil, dass auch diese beiden Lagen während des Fügeprozesses zuverlässig miteinander verbunden werden können. Zwischen den beiden Lagen 15 wird somit auch eine metallische Verbin- dung 35a während des Fügeprozesses hergestellt, beispielsweise eine Sinterverbindung. Alternativ (nicht dargestellt) ist es auch möglich, dass die Kontaktierungsstruktur 16 aus einem Stück gefertigt wird. Allerdings müssen die Lagen 14 aus dem Prepreg dann in geeigneter Weise zugeschnitten werden, damit diese jeweils vor und hinter den senkrecht verlaufenden Teilen der Kontaktierungsstruktur verlegt werden können. Da die Lagen aus dem Prepreg elastisch sind, können hierbei gewisse Hinterschneidungen überwunden werden. Die endgültige Montage ist ebenfalls in Figur 3 angedeutet.According to Figure 3, the two layers 15 of metal within the lower layer 14 of the prepreg are also connected via a shaped piece of the filler material (see Figure 1). This has the advantage that these two layers can be reliably connected to each other during the joining process. Between the two layers 15, a metallic connection 35a is thus also produced during the joining process, for example a sintered connection. Alternatively (not shown), it is also possible that the contacting structure 16 is made of one piece. However, the layers 14 of the prepreg must then be cut in a suitable manner, so that they can be laid in front of and behind the vertically extending parts of the contacting structure. Since the layers of the prepreg are elastic, certain undercuts can be overcome in this case. The final assembly is also indicated in FIG.
Die Baugruppe wird in ein geeignetes Werkzeug eingelegt. Dieses besteht aus Fügewerkzeugen 20a, 20b, welche von unten und von oben an die fertigzustellende Baugruppe 25 herangeführt werden. Die Fügewerkzeuge verfügen über Auflageflächen 34, mit denen eine Druckkraft P auf die zu fügenden Bauteile ausgeübt werden kann. Diese Auflageflächen 34 sind vorteilhaft eben ausgeführt, was dadurch gelingt, dass sowohl die Grundplatte 31 als auch die Haube 11 in geeigneter Weise ebene Auflageflächen für die Fügewerkzeuge 20a, 20b zur Verfügung stellen. Daher kann eine nicht näher dargestellte Heizung, mit denen die Fügewerkzeuge auf die Temperatur T gebracht werden, die Wärme über die gesamte Auflagefläche 34 auf die Baugruppe 25 übertragen. Die Wärme in den Fügewerkzeugen kann beispielsweise über eine nicht dargestellte elektrische Widerstandsheizung erfolgen. Zusammen mit der erforderlichen Druckkraft P wird der Zusatzwerkstoff (vgl. Figur 1) in Fügeverbindungen 35, 35a gemäß Figur 3 umgewandelt, so dass die Baugruppe auf diese Weise bleibend montiert wird. The module is inserted in a suitable tool. This consists of joining tools 20a, 20b, which are brought from below and from above to the finished assembly 25. The joining tools have bearing surfaces 34, with which a compressive force P can be exerted on the components to be joined. These bearing surfaces 34 are advantageously carried out flat, which thereby succeeds that both the base plate 31 and the hood 11 level in a suitable manner Provide support surfaces for the joining tools 20a, 20b. Therefore, a heater, not shown, with which the joining tools are brought to the temperature T, the heat transferred over the entire bearing surface 34 on the assembly 25. The heat in the joining tools can be done for example via an electrical resistance heater, not shown. Together with the required compressive force P, the filler material (see FIG. 1) is converted into joint connections 35, 35a according to FIG. 3, so that the assembly is permanently mounted in this way.
Gleichzeitig mit der Schaffung der Fügeverbindungen 35, 35a wird auch das Material der Lagen 14 aus dem Prepreg ausgehärtet. Es ist erkennbar, dass sich dieses Material durch den Druck P plastisch verformt. Unter anderem setzt das Material dabei auf die Oberseite 27 des Bauelements 12 auf und kann dort einen Fügedruck erzeugen. Außerdem werden Lücken 36 (vgl. Figur 1) geschlossen, während sich die Lagen 14 des Prepregs miteinander verbinden. Aufgrund der plastischen Ver- formung ist auch eine bauchige Außenseite 37 der Haube 11 in Figur 3 zu erkennen. In diesem Zustand härtet das Simultaneously with the creation of the joint connections 35, 35a and the material of the layers 14 is cured from the prepreg. It can be seen that this material is plastically deformed by the pressure P. Among other things, the material is applied to the upper side 27 of the component 12 and can generate a joining pressure there. In addition, gaps 36 (see Figure 1) are closed, while the layers 14 of the prepreg connect to each other. Due to the plastic deformation is also a bulbous outer side 37 of the hood 11 in Figure 3 can be seen. In this condition, this cures
Prepregmaterial aus, während gleichzeitig die Fügeverbindun- gen 35 in einem Arbeitsgang hergestellt werden. Der Verlauf der Temperatur T und des Drucks P während des Fügeverfahrens muss sowohl die Aushärtungszeiten des Prepregs berücksichtigen als auch die Bedingungen der Ausbildung der Fügeverbindungen. Dabei müssen Druck P und Temperatur T nicht zwangsläufig konstant gehalten werden. Es ist auch möglich, dass beispielsweise erst die thermischen Bedingungen für die Aus- bildung des Prepregs erreicht werden, die geringer ausfallen, und anschließend der ausgehärtete Prepreg dazu verwendet wird, um den notwendigen Druck P für eine anschließende Sinterbehandlung zur Verfügung zu stellen. Hierbei kann, wenn erforderlich, auch eine Temperaturerhöhung erfolgen, da das ausgehärtete Prepregmaterial nun auch bei höheren Temperaturen mechanisch stabil bleibt. In Figur 4 ist eine alternativ ausgestaltete Baugruppe 25 dargestellt, und zwar, nachdem die Fügewerkzeuge entfernt wurden. Da die Außenfläche 19 sowie die Fläche der Grundplatte 31 jeweils eben ausgeführt sind, können die Fügewerkzeuge 33 gemäß Figur 3 auch für die elektrische Baugruppe 25 gemäß Figur 4 verwendet werden. Die Haube 11 gemäß Figur 4 ist allerdings anders ausgestaltet, als die Haube gemäß den Figuren 1 und 3. Diese besteht aus einem thermoplastischen Kunst- stoffmaterial . In die Innenseite 18 der Haube ist eine Kon- taktierungsstruktur 16 in Form eines Leadframes eingelegt worden. Nach vorläufiger Fixierung der Kontaktierungsstruktur sind überschüssige Teile des Leadframes bereits abgetrennt worden (nicht näher dargestellt) . Die Kontaktierungsstruktu- ren sind ebenfalls mit einem Zusatzwerkstoff (analog zu Figur 1 und 2) versehen worden, der in der Baugruppe 25 gemäß Figur 4 Fügeverbindungen 35 ausbildet. Prepregmaterial while at the same time the joining compounds 35 are produced in one operation. The course of the temperature T and the pressure P during the joining process must take into account both the curing times of the prepreg and the conditions of the formation of the joints. In this case, pressure P and temperature T need not necessarily be kept constant. It is also possible that, for example, first the thermal conditions for the formation of the prepreg are achieved, which are lower, and then the cured prepreg is used to provide the necessary pressure P for a subsequent sintering treatment. In this case, if necessary, also an increase in temperature, since the cured prepreg material now remains mechanically stable even at higher temperatures. FIG. 4 shows an alternatively configured module 25, specifically after the joining tools have been removed. Since the outer surface 19 and the surface of the base plate 31 are each made flat, the joining tools 33 according to FIG. 3 can also be used for the electrical assembly 25 according to FIG. However, the hood 11 according to FIG. 4 is designed differently than the hood according to FIGS. 1 and 3. It consists of a thermoplastic plastic material. Into the inner side 18 of the hood, a contacting structure 16 in the form of a leadframe has been inserted. After provisional fixation of the contacting structure, excess parts of the leadframe have already been cut off (not shown in detail). The contacting structures have likewise been provided with an additional material (analogous to FIGS. 1 and 2), which forms joint connections 35 in the assembly 25 according to FIG.
Auch in Figur 4 ist zu erkennen, dass die Außenseite 37 der Haube gewölbt ist. Dies ist darauf zurückzuführen, dass der thermoplastische Kunststoff während des Fügevorgangs aufgrund der wirkenden Kräfte P (vgl. Figur 3) zu fließen begonnen hatte. Allerdings waren die erforderlichen Temperaturen für das Fügen so mit dem Temperaturbereich der Erweichung des thermoplastischen Materials der Haube 11 abgestimmt, dass dieser Fließvorgang nur langsam erfolgte und insofern eine genügende mechanische Stabilität des thermoplastischen Materials erhalten blieb, damit die Fügekraft P auf die sich ausbildenden Fügeverbindungen 35 übertragen werden konnte. Das Kriechen des thermoplastischen Materials muss im Übrigen so langsam erfolgen, dass der Fügedruck über den gesamten Zeitraum des Fügeprozesses aufrechterhalten werden kann. Also in Figure 4 it can be seen that the outer side 37 of the hood is curved. This is due to the fact that the thermoplastic had begun to flow during the joining process due to the acting forces P (see FIG. However, the required temperatures for the joining were so matched with the temperature range of the softening of the thermoplastic material of the hood 11, that this flow process was slow and insofar sufficient mechanical stability of the thermoplastic material was maintained, so that the joining force P on the forming joint joints 35th could be transferred. Incidentally, the creep of the thermoplastic material must be so slow that the joining pressure can be maintained over the entire period of the joining process.

Claims

Patentansprüche claims
1. Verfahren zum Montieren eines elektrischen Bauelementes (12) auf einem Substrat (13) , wobei 1. A method for mounting an electrical component (12) on a substrate (13), wherein
- das Bauelement eine dem Substrat zugewandte Unterseite - The device facing the substrate underside
(26) und eine dieser genüberliegende Oberseite (27) aufweist , (26) and one of these genüberliegende upper side (27),
- die Unterseite (26) des Bauelementes (12) mit der durch das Substrat (13) zur Verfügung stehenden Baugruppe me- chanisch verbunden wird,  the bottom (26) of the component (12) is mechanically connected to the assembly available through the substrate (13),
- die Oberseite (27) des Bauelementes (12) und die Montageseite (23) des Substrates (13) über eine Kontaktie- rungsstruktur (16) mechanisch verbunden wird,  the upper side (27) of the component (12) and the mounting side (23) of the substrate (13) are mechanically connected via a contacting structure (16),
wobei die Fügeverbindungen, die beim Fügen entstehen, in mindestens zwei unterschiedlichen Fügeleveln liegen, d a d u r c h g e k e n n z e i c h n e t,  wherein the joining connections which arise during the joining lie in at least two different levels of suspension, d a d e r c h e c e n e c e n e,
dass die Kontaktierungsstruktur (16) in Form von Leitpfaden in eine Haube (11) integriert wird, the contacting structure (16) is integrated in the form of guide paths in a hood (11),
wobei die Haube (11) aus einem thermisch erweichbaren oder thermisch aushärtbaren Material besteht, wherein the hood (11) consists of a thermally softenable or thermally curable material,
wobei die Haube (11) bei der Montage the hood (11) during assembly
- auf die Montageseite (23) des Substrates (13) aufgesetzt wird,  - is placed on the mounting side (23) of the substrate (13),
- das Bauelement (12) überspannt,  - spans the component (12),
- Kontaktflächen der Kontaktierungsstruktur (16) mit dem - Contact surfaces of the contacting structure (16) with the
Substrat (13) innerhalb eines ersten Fügelevels (28) , der durch die Montageseite (23) des Substates (13) zur Verfügung gestellt wird, in Eingriff gelangen und Substrate (13) within a first Fügelevels (28), which is provided by the mounting side (23) of the substrate (13) is engaged, and
- auf der Innenseite der Haube (11) Kontaktflächen der  - On the inside of the hood (11) contact surfaces of the
Kontaktierungsstruktur (16) innerhalb eines zweiten Fügelevels (29) auf Höhe der Oberseite (27) des Bauelementes mit dem Bauelement (12) in Eingriff gelangen, und wobei das Material der Haube (11) bei der Montage zumindest in den Erweichungsbereich oder in den Aushärtungsbereich hinein erwärmt wird, während die Fügeverbindungen an den Kontaktflächen der Kontaktierungsstruktur (16) fertiggestellt werden . Contacting structure (16) within a second Fügelevels (29) at the level of the top (27) of the component with the component (12) into engagement, and wherein the material of the hood (11) during assembly at least in the softening region or in the curing area is heated while the joint connections at the contact surfaces of the contacting structure (16) are completed.
2. Verfahren nach Anspruch 1, 2. The method according to claim 1,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass that
- das Substrat (13) , das Bauelement (12) und die Haube  - The substrate (13), the device (12) and the hood
(11) zusammengesetzt werden, bevor  (11) before
- Fügeverbindungen (35) am Bauelement (12) in dem ersten Fügelevel (28) und in dem zweiten Fügelevel (29) in ein und demselben Arbeitsgang durch eine Temperaturerhöhung oder eine Temperatur- und Druckerhöhung fertiggestellt werden.  - Joining joints (35) on the component (12) in the first Fügelevel (28) and in the second Fügelevel (29) are completed in one and the same operation by a temperature increase or a temperature and pressure increase.
3. Verfahren nach Anspruch 2 , 3. The method according to claim 2,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass das Erweichen oder Aushärten der Haube (11) und das Fer- tigstellen der Fügeverbindungen (35) in ein und demselben Arbeitsgang unter gleichen Bedingungen erfolgt. that the softening or curing of the hood (11) and the completion of the joint connections (35) takes place in the same operation under the same conditions.
4. Verfahren nach einem der voranstehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t, 4. Method according to one of the preceding claims, characterized in that
dass that
- das Substrat (13) mit seiner der Montageseite (23) abgekehrten Rückseite (24), die einen dritter Fügelevel +30 zur Verfügung stellt, mit einem Bauteil (31) zusammengesetzt wird, bevor  - The substrate (13) with its the mounting side (23) facing away from back (24), which provides a third Fügellevel +30, is assembled with a component (31) before
- eine Verbindung zwischen dem Bauteil (31) und dem Substrat (13) in demjenigen Arbeitsgang fertiggestellt wird, in dem auch die Fügeverbindungen (35) am Bauelement (12) in dem ersten Fügelevel (28) und in dem zweiten Fügelevel (29) fertiggestellt werden.  - A connection between the component (31) and the substrate (13) is completed in that operation, in which the joint connections (35) on the component (12) in the first Fügelevel (28) and in the second Fügelevel (29) completed become.
5. Verfahren nach einem der voranstehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t, 5. Method according to one of the preceding claims, characterized in that
dass die Haube (11) außen eine ebene Fläche aufweist, die parallel zum Substrat verläuft. in that the hood (11) has on the outside a flat surface which runs parallel to the substrate.
6. Verfahren nach einem der voranstehenden Ansprüche, d a d u r c h g e k e n n z e i c h n e t, 6. The method according to one of the preceding claims, d a d u c h e c e n e c e n e,
dass als aushärtbares Material ein Prepreg verwendet wird. in that a prepreg is used as the hardenable material.
7. Verfahren nach einem der Ansprüche 1 bis 5, 7. The method according to any one of claims 1 to 5,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass als thermisch erweichbares Material ein Phasenwechselma- terial Verwendung findet. that a phase change material is used as the thermally softenable material.
8. Verfahren nach Anspruch 7, 8. The method according to claim 7,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass das Phasenwechselmaterial in einer Umhüllung einge- schlössen wird. that the phase change material is enclosed in an enclosure.
9. Haube für eine elektrische Baugruppe, die ein Substrat (13) und mindestens ein auf diesem montiertes Bauelement (12) aufweist, wobei die Haube 9. Hood for an electrical assembly, comprising a substrate (13) and at least one mounted thereon component (12), wherein the hood
- eine Stützfläche (21) aufweist, mit der sie auf das Substrat aufgesetzt werden kann,  - Has a support surface (21), with which it can be placed on the substrate,
- eine Kavität aufweist, in der das Bauelement aufgenommen werden kann,  a cavity in which the component can be accommodated,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass eine Kontaktierungsstruktur (16) in Form von Leitpfaden in eine Haube (11) integriert ist, a contacting structure (16) in the form of guide paths is integrated in a hood (11),
wobei in which
- die Haube (11) aus einem thermisch erweichbaren oder  - The hood (11) made of a thermally softenable or
thermisch aushärtbaren Material besteht und  consists of thermally curable material and
- die Kontaktierungsstruktur auf der Innenseite der Haube - The contacting structure on the inside of the hood
(16), im Bereich der Stützfläche (21) in der Kavität (22) Kontaktflächen für das Substrat (13) und das Bauelement (12) aufsweist. (16), in the region of the support surface (21) in the cavity (22) contact surfaces for the substrate (13) and the component (12) assigns.
10. Haube nach Anspruch 9, 10. Hood according to claim 9,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass die Haube (11) in Sandwichbauweise ausgeführt ist, wobei das sowohl das thermisch erweichbare oder thermisch that the hood (11) is made in sandwich construction, which is both the thermally softenable or thermal
aushärtbare Material als auch die Kontaktierungsstruktur (16) Lagen (14, 15) in dem Sandwich bilden. hardenable material and the contacting structure (16) layers (14, 15) form in the sandwich.
11. Haube nach einem der Ansprüche 9 oder 10, 11. Hood according to one of claims 9 or 10,
d a d u r c h g e k e n n z e i c h n e t, dass in der Haube auf die Kontaktflächen der characterized, that in the hood on the contact surfaces of the
Kontaktierungsstuktur (16) ein Zusatzwerkstoff (17) aufgebracht ist. Contacting structure (16) an additional material (17) is applied.
12. Haube nach einem der Ansprüche 9 bis 11, 12. Hood according to one of claims 9 to 11,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass die Stützfläche (21) durch einen Rand der Haube (11) gebildet ist. in that the support surface (21) is formed by an edge of the hood (11).
13. Haube nach einem der Ansprüche 9 bis 12, 13. Hood according to one of claims 9 to 12,
d a d u r c h g e k e n n z e i c h n e t, characterized,
dass die Außenseite (19) der Haube (11) eben ist. the outside (19) of the hood (11) is flat.
EP15715699.3A 2014-04-04 2015-03-30 Method for mounting an electrical component, wherein a hood is used, and hood suitable for use in said method Withdrawn EP3105784A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014206608.5A DE102014206608A1 (en) 2014-04-04 2014-04-04 A method of mounting an electrical component using a hood and a hood suitable for use in this method
PCT/EP2015/056867 WO2015150311A1 (en) 2014-04-04 2015-03-30 Method for mounting an electrical component, wherein a hood is used, and hood suitable for use in said method

Publications (1)

Publication Number Publication Date
EP3105784A1 true EP3105784A1 (en) 2016-12-21

Family

ID=52824226

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15715699.3A Withdrawn EP3105784A1 (en) 2014-04-04 2015-03-30 Method for mounting an electrical component, wherein a hood is used, and hood suitable for use in said method

Country Status (6)

Country Link
US (1) US10008394B2 (en)
EP (1) EP3105784A1 (en)
JP (1) JP6498272B2 (en)
CN (1) CN106133895B (en)
DE (1) DE102014206608A1 (en)
WO (1) WO2015150311A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021259536A2 (en) 2020-06-23 2021-12-30 Siemens Aktiengesellschaft Method for contacting a power semiconductor device on a substrate

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014206601A1 (en) 2014-04-04 2015-10-08 Siemens Aktiengesellschaft A method of mounting an electrical component using a hood and a hood suitable for use in this method
DE102014206608A1 (en) 2014-04-04 2015-10-08 Siemens Aktiengesellschaft A method of mounting an electrical component using a hood and a hood suitable for use in this method
EP3246941A1 (en) 2016-05-18 2017-11-22 Siemens Aktiengesellschaft Electronic assembly having a component between two circuit carriers and method for joining such an assembly
DE102016208498A1 (en) 2016-05-18 2017-11-23 Siemens Aktiengesellschaft Electronic assembly with component located between two circuit carriers and method for their production
DE102016220553A1 (en) * 2016-10-20 2018-04-26 Robert Bosch Gmbh power module
EP3399546A1 (en) 2017-05-02 2018-11-07 Siemens Aktiengesellschaft Electronic assembly having a built-in component between two substrates and method for the production of same
DE102017207329A1 (en) 2017-05-02 2018-11-08 Siemens Aktiengesellschaft Electronic assembly with a built between two substrates component and method for its preparation
DE102017211330A1 (en) * 2017-07-04 2019-01-10 Siemens Aktiengesellschaft Tolerance compensation element for circuit diagrams
DE102017212233A1 (en) * 2017-07-18 2019-01-24 Siemens Aktiengesellschaft Electrical assembly and method of making an electrical assembly
US11476127B2 (en) 2018-03-23 2022-10-18 Mitsubishi Materials Corporation Manufacturing method of electronic-component-mounted module
DE102018204887B3 (en) * 2018-03-29 2019-09-05 Danfoss Silicon Power Gmbh A method of mounting a semiconductor power module component and a semiconductor power module with such a module component
US11670570B2 (en) 2019-05-22 2023-06-06 Samsung Electronics Co., Ltd. Electronic device and method of manufacturing an electronic device
DE102019117091B4 (en) * 2019-06-25 2023-04-06 Semikron Elektronik Gmbh & Co. Kg Device for the integral connection of connection partners of a power electronics component and use of the device for integral connection
DE102019214996A1 (en) * 2019-09-06 2021-03-11 Siemens Aktiengesellschaft Semi-finished product for component assembly, method for component assembly and use of the semi-finished product
DE102020109555A1 (en) * 2020-04-06 2021-10-07 Infineon Technologies Ag Enclosed semiconductor device and method for making an enclosed semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207475B1 (en) * 1999-03-30 2001-03-27 Industrial Technology Research Institute Method for dispensing underfill and devices formed
US20140008811A1 (en) * 2012-07-09 2014-01-09 Freescale Semiconductor, Inc. Device package with rigid interconnect structure connecting die and substrate and method thereof

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0971405A3 (en) * 1994-09-23 2000-05-10 Siemens S.A. Method for manufacturing a substrate for a polymer stud grid array
US5986334A (en) 1996-10-04 1999-11-16 Anam Industrial Co., Ltd. Semiconductor package having light, thin, simple and compact structure
JPH11289023A (en) * 1998-04-02 1999-10-19 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
DE10062108B4 (en) 2000-12-13 2010-04-15 Infineon Technologies Ag Power module with improved transient thermal resistance
JP4045083B2 (en) 2000-12-25 2008-02-13 株式会社ルネサステクノロジ Semiconductor module and mounting structure
US20070262470A1 (en) 2004-10-21 2007-11-15 Matsushita Electric Industrial Co., Ltd. Module With Built-In Semiconductor And Method For Manufacturing The Module
JP4770533B2 (en) 2005-05-16 2011-09-14 富士電機株式会社 Semiconductor device manufacturing method and semiconductor device
US7468548B2 (en) 2005-12-09 2008-12-23 Fairchild Semiconductor Corporation Thermal enhanced upper and dual heat sink exposed molded leadless package
JP2007324550A (en) 2006-06-05 2007-12-13 Denso Corp Multilayer substrate
KR100790994B1 (en) 2006-08-01 2008-01-03 삼성전자주식회사 Semiconductor image sensor package, method for manufacturing the same and semiconductor image sensor module comprising the same
DE102006044525B3 (en) 2006-09-21 2008-01-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for production of integrated circuit, involves continuous making of flexible substrate having conductive strip structure, where flexible integrated circuit is connected with conductive strip structure of flexible substrate
US7525187B2 (en) 2006-10-13 2009-04-28 Infineon Technologies Ag Apparatus and method for connecting components
JP5042591B2 (en) 2006-10-27 2012-10-03 新光電気工業株式会社 Semiconductor package and stacked semiconductor package
DE102007036045A1 (en) 2007-08-01 2009-02-05 Siemens Ag Electronic component with at least one component, in particular a semiconductor component, and method for its production
DE102007057346B3 (en) * 2007-11-28 2009-06-10 Fachhochschule Kiel Laminated power electronics module
JP5543086B2 (en) * 2008-06-25 2014-07-09 ピーエスフォー ルクスコ エスエイアールエル Semiconductor device and manufacturing method thereof
US8201326B2 (en) * 2008-12-23 2012-06-19 Infineon Technologies Ag Method of manufacturing a semiconductor device
JP5245925B2 (en) * 2009-03-06 2013-07-24 富士通株式会社 Electronic component and manufacturing method thereof
DE102009016112A1 (en) 2009-04-03 2010-10-14 Technische Universität Carolo-Wilhelmina Zu Braunschweig Device for wire bonding, has electrical components and electrical cable for electrical connection of electrical contact of one component with another component
JP5077448B2 (en) 2010-04-02 2012-11-21 株式会社デンソー Semiconductor chip built-in wiring board and manufacturing method thereof
US8598695B2 (en) 2010-07-23 2013-12-03 Tessera, Inc. Active chip on carrier or laminated chip having microelectronic element embedded therein
US8847376B2 (en) 2010-07-23 2014-09-30 Tessera, Inc. Microelectronic elements with post-assembly planarization
US8502367B2 (en) * 2010-09-29 2013-08-06 Stmicroelectronics Pte Ltd. Wafer-level packaging method using composite material as a base
KR101204187B1 (en) 2010-11-02 2012-11-23 삼성전기주식회사 Power Module using Sintering die attach And Manufacturing Method Thereof
KR101218989B1 (en) * 2011-07-15 2013-01-21 삼성전기주식회사 Semiconductor package and manufacturing method thereof
US9018725B2 (en) 2011-09-02 2015-04-28 Optiz, Inc. Stepped package for image sensor and method of making same
CN102496612B (en) 2011-12-21 2013-09-18 重庆西南集成电路设计有限责任公司 High-isolation integrated circuit packaged by adopting ceramic casing
US9888568B2 (en) 2012-02-08 2018-02-06 Crane Electronics, Inc. Multilayer electronics assembly and method for embedding electrical circuit components within a three dimensional module
US8975117B2 (en) 2012-02-08 2015-03-10 Infineon Technologies Ag Semiconductor device using diffusion soldering
CN202495439U (en) * 2012-03-07 2012-10-17 苏州晶方半导体科技股份有限公司 Semiconductor packaging structure and module thereof
CN102738131B (en) 2012-03-07 2016-02-24 苏州晶方半导体科技股份有限公司 Semiconductor module, encapsulating structure and method for packing thereof
JP2014011236A (en) 2012-06-28 2014-01-20 Honda Motor Co Ltd Semiconductor device, manufacturing apparatus of the same, and manufacturing method of the same
DE102014206601A1 (en) 2014-04-04 2015-10-08 Siemens Aktiengesellschaft A method of mounting an electrical component using a hood and a hood suitable for use in this method
DE102014206608A1 (en) 2014-04-04 2015-10-08 Siemens Aktiengesellschaft A method of mounting an electrical component using a hood and a hood suitable for use in this method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207475B1 (en) * 1999-03-30 2001-03-27 Industrial Technology Research Institute Method for dispensing underfill and devices formed
US20140008811A1 (en) * 2012-07-09 2014-01-09 Freescale Semiconductor, Inc. Device package with rigid interconnect structure connecting die and substrate and method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015150311A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021259536A2 (en) 2020-06-23 2021-12-30 Siemens Aktiengesellschaft Method for contacting a power semiconductor device on a substrate

Also Published As

Publication number Publication date
DE102014206608A1 (en) 2015-10-08
JP2017513241A (en) 2017-05-25
JP6498272B2 (en) 2019-04-10
WO2015150311A1 (en) 2015-10-08
US20170117162A1 (en) 2017-04-27
CN106133895A (en) 2016-11-16
CN106133895B (en) 2019-12-13
US10008394B2 (en) 2018-06-26

Similar Documents

Publication Publication Date Title
WO2015150311A1 (en) Method for mounting an electrical component, wherein a hood is used, and hood suitable for use in said method
DE102014206601A1 (en) A method of mounting an electrical component using a hood and a hood suitable for use in this method
DE10066446B4 (en) Method for producing an electronic component with two emission components
DE102011006341A1 (en) Method for manufacturing a wiring sub-assembly with embedded semiconductor chip
EP3036761B1 (en) Method of diffusion soldering an electronic component with a mounting surface with recesses on a substrate
DE102018204887B3 (en) A method of mounting a semiconductor power module component and a semiconductor power module with such a module component
EP2743973A2 (en) Method for contacting a semiconductor element by welding a contact element to a sintered layer on the semiconductor element and semiconductor component with increased stability against thermomechanical influence
EP2516321B1 (en) Sensor comprising a preferably multilayered ceramic substrate and method for producing it
DE102013219833A1 (en) SEMICONDUCTOR MODULE WITH LADDER PLATE AND METHOD FOR HOLDING A SEMICONDUCTOR MODULE WITH A CONDUCTOR PLATE
EP2812912A2 (en) Connection arrangement of an electric and/or electronic component
DE102007037538A1 (en) Assembly and manufacture of an assembly
DE102007058497A1 (en) Laminated multilayer printed circuit board
EP3399546A1 (en) Electronic assembly having a built-in component between two substrates and method for the production of same
DE102014010373A1 (en) Electronic module for a motor vehicle
DE102014206606A1 (en) Method for mounting an electrical component on a substrate
WO2014095066A1 (en) Method for assembling a diode laser module
EP2382654A1 (en) High-temperature-resistant component structure free of soldering agent, and method for electrical contact-connection
EP3582928B1 (en) Solder preform for establishing a diffusion solder connection and method for producing a solder preform
DE102013110812B3 (en) A method for producing a further developed shaped metal body and method for producing a power semiconductor device with a solder joint using this further formed metal moldings.
EP3718136A1 (en) Semiconductor assembly and method of producing the semiconductor assembly
DE102017207329A1 (en) Electronic assembly with a built between two substrates component and method for its preparation
EP3741562B1 (en) Method for producing a semiconductor module
EP3799539B1 (en) Circuit carrier, package and method for its production
DE102017204887B4 (en) Method using a liquid metal for joining thermoelectric modules in a SLID process, and the arrangement and use produced therewith for using thermoelectric modules
DE102008013412B3 (en) Manufacturing process for radiation detector module for detecting X-ray or gamma radiation, by contacting electrically conductive contact elements on a part of first and/or second contact areas of corresponding first and second components

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20160913

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SIEMENS AKTIENGESELLSCHAFT

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20190322

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/31 20060101ALN20211216BHEP

Ipc: H01L 23/498 20060101ALI20211216BHEP

Ipc: H01L 23/495 20060101ALI20211216BHEP

Ipc: H01L 23/485 20060101ALI20211216BHEP

Ipc: H01L 23/473 20060101ALI20211216BHEP

Ipc: H01L 23/373 20060101ALI20211216BHEP

Ipc: H01L 23/14 20060101ALI20211216BHEP

Ipc: H01L 23/13 20060101ALI20211216BHEP

Ipc: H01L 21/56 20060101AFI20211216BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/31 20060101ALN20220112BHEP

Ipc: H01L 23/498 20060101ALI20220112BHEP

Ipc: H01L 23/495 20060101ALI20220112BHEP

Ipc: H01L 23/485 20060101ALI20220112BHEP

Ipc: H01L 23/473 20060101ALI20220112BHEP

Ipc: H01L 23/373 20060101ALI20220112BHEP

Ipc: H01L 23/14 20060101ALI20220112BHEP

Ipc: H01L 23/13 20060101ALI20220112BHEP

Ipc: H01L 21/56 20060101AFI20220112BHEP

INTG Intention to grant announced

Effective date: 20220124

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20220604