CN111868900A - 电子组件安装模块的制造方法 - Google Patents

电子组件安装模块的制造方法 Download PDF

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Publication number
CN111868900A
CN111868900A CN201880091419.9A CN201880091419A CN111868900A CN 111868900 A CN111868900 A CN 111868900A CN 201880091419 A CN201880091419 A CN 201880091419A CN 111868900 A CN111868900 A CN 111868900A
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China
Prior art keywords
layer
silver paste
electronic component
bonding
silver
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CN201880091419.9A
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大开智哉
大井宗太郎
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Publication of CN111868900A publication Critical patent/CN111868900A/zh
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Abstract

本发明提供一种电子组件安装模块的制造方法，其具有层叠体形成工序和一并接合工序，在所述层叠体形成工序中，在具有陶瓷基板及电路层的绝缘电路基板的该电路层与电子组件的一个面之间形成由银膏制成的第一银膏层，所述电路层与该陶瓷基板接合且由铝或铝合金制成，并且在电子组件的另一个面与由铜或铜合金制成的引线框之间形成由银膏制成的第二银膏层，从而形成电路层、电子组件及引线框的层叠体，在所述一并接合工序中，在层叠体形成工序之后，在层叠方向上使1MPa以上且20MPa以下的施加压力作用于所述层叠体的状态下加热至180℃以上且350℃以下的加热温度，由此烧结第一银膏层，形成烧结该第一银膏层而成的第一银烧结接合层，并且烧结第二银膏层，形成烧结该第二银膏层而成的第二银烧结接合层，从而一并接合电路层、电子组件及引线框。

Description

电子组件安装模块的制造方法
技术领域
本发明涉及一种在绝缘电路基板上安装有功率元件、LED元件、热电元件、其他电子组件的电子组件安装模块的制造方法。
背景技术
在电子组件安装模块中，在控制大电流、高电压的半导体装置中使用的功率模块中，要求对大电流容量的应对、配线电阻的减小。因此，例如在专利文献1中采用了如下结构：与半导体元件连接的配线通过引线框形成，该引线框由铜制成，利用环氧树脂等将电子组件(功率半导体元件、控制半导体元件)及引线框(外部引线框、内部引线框)的接合部分进行树脂密封。
并且，例如，如专利文献2所示，在电子组件安装模块中使用如下的绝缘电路基板(功率模块用基板)：由铝板等制成的电路层与以氮化铝为首的绝缘基板的一个面接合，并且由铝板等制成的金属层与另一个面接合。由铜等制成的散热器与该绝缘电路基板的金属层接合。
作为将电子组件及引线框接合到该绝缘电路基板来制造电子组件安装模块的方法，例如，在将电路层及金属层接合到陶瓷基板的两个面的绝缘电路基板的电路层上，通过银烧结接合或焊接等方法接合电子组件。之后，通过焊接等将由铜制成的引线框接合到该电子组件上。
专利文献1：日本特开2001-291823号公报
专利文献2：日本特开2005-328087号公报
在上述的电子组件安装模块的制造方法中，在安装电子组件之后，线膨胀系数小的电子组件与绝缘电路基板的一个面接合，因此有时会发生翘曲。通过发生该翘曲，例如，将如专利文献1所示的由铜制成的引线框接合到电子组件上的工序中，有可能会产生接合不良、电子组件本身的损伤等。
发明内容
本发明是鉴于这种情况而完成的，其目的在于抑制翘曲的发生，在不发生接合不良、电子组件的损伤等的情况下接合电子组件及引线框，从而简单地制造电子组件安装模块。
本发明的功率模块的制造方法具有层叠体形成工序和一并接合工序，在所述层叠体形成工序中，在具有陶瓷基板及电路层的绝缘电路基板的该电路层与电子组件的一个面之间形成由银膏制成的第一银膏层，所述电路层与该陶瓷基板接合且由铝或铝合金制成，并且在所述电子组件的另一个面与由铜或铜合金制成的引线框之间形成由银膏制成的第二银膏层，从而形成所述电路层、所述电子组件及所述引线框的层叠体，在所述一并接合工序中，在所述层叠体形成工序之后，在层叠方向上使1MPa以上且20MPa以下的施加压力作用于所述层叠体的状态下加热至180℃以上且350℃以下的加热温度，由此烧结所述第一银膏层，形成烧结该第一银膏层而成的第一银烧结接合层，并且烧结所述第二银膏层，形成烧结该第二银膏层而成的第二银烧结接合层，从而一并接合所述电路层、所述电子组件及所述引线框。
在该制造方法中，在绝缘电路基板的电路层上安装电子组件时，也一并接合引线框。具有陶瓷基板的绝缘电路基板和由铜或铜合金制成的引线框的刚性相对高，不易变形。电子组件在夹在绝缘电路基板与引线框之间的状态下被接合，并被施加压力，由此可抑制翘曲的发生。
在电路层和电子组件的接合材料及电子组件和引线框的接合材料为焊锡的情况下，通过加热生成液相，因此若在层叠方向上施加压力，则熔融焊锡有可能会从各部件之间流出。因此，不对层叠体施加压力而接合，难以均匀地接合。另一方面，在使用银膏层(第一银膏层及第二银膏层)的情况下，不生成液相，而通过烧结来接合。因此，能够在层叠体的层叠方向上作用足够的施加压力。并且，银膏层的烧结温度(接合温度)也低，因此对于防止翘曲的发生有效。
若施加压力小于1MPa，则接合不足，若超过20MPa，则有可能会损坏电子组件。在加热温度小于180℃时，无法充分地烧结银膏层，若超过350℃，则有可能会损坏电子组件。另外，电路层由铝或铝合金制成，因此对施加压力具有缓冲作用，能够在不损坏电子组件的情况下作用相对大至20MPa的施加压力。
作为本发明的电子组件安装模块的制造方法的优选的实施方式，所述绝缘电路基板具有：散热层，接合于所述陶瓷基板的与所述电路层的接合面相反的一侧的面，且由铝或铝合金制成；及散热器，与该散热层接合，且由铜或铜合金制成。
绝缘电路基板中，在与接合于电路层的电子组件、接合于电子组件的引线框相反的一侧设置有由铜或铜合金制成的刚性高的散热器。因此，能够进一步抑制翘曲的发生。
作为本发明的电子组件安装模块的制造方法的优选的实施方式，可以在所述层叠体形成工序中，进一步在所述第一银膏层与所述电路层之间配置由铜或铜合金制成的垫片，并且在该垫片与所述电路层之间形成由银膏制成的第三银膏层，在所述一并接合工序中，在层叠方向上使所述施加压力作用于所述层叠体的状态下加热至所述加热温度，由此烧结所述第三银膏层，形成烧结该第三银膏层而成的第三银烧结接合层，从而同时接合所述绝缘电路基板、所述垫片、所述电子组件及所述引线框。
作为本发明的电子组件安装模块的制造方法的优选的实施方式，可以在所述层叠体形成工序中，进一步在所述第二银膏层与所述引线框之间配置由铜或铜合金制成的垫片，并且在该垫片与所述引线框之间形成由银膏制成的第三银膏层，在所述一并接合工序中，在层叠方向上使所述施加压力作用于所述层叠体的状态下加热至所述加热温度，由此烧结所述第三银膏层，形成烧结该第三银膏层而成的第三银烧结接合层，从而同时接合所述绝缘电路基板、所述电子组件、所述垫片及所述引线框。
能够通过垫片来调整引线框的高度位置(层叠方向的位置)，能够在适合的位置拉出引线框。并且，该垫片与电子组件接合，因此还具有迅速地散发电子组件的热的效果。
根据本发明，由于一并接合绝缘电路基板的电路层、电子组件、引线框，因此电子组件安装模块的翘曲的问题得到解决，能够在不产生接合不良、电子组件的损伤等的情况下进行接合。而且，能够将它们层叠而一次接合，因此电子组件安装模块的制造也变得容易。
附图说明
图1是表示本发明的第一实施方式所涉及的功率模块的制造方法的流程图。
图2A是说明第一实施方式的制造方法中的功率模块用基板形成工序的剖视图。
图2B是功率模块用基板的剖视图。
图2C是说明一并接合工序的剖视图。
图3是通过第一实施方式的制造方法制造的功率模块的剖视图。
图4是说明基底金属层的放大剖视图。
图5是通过本发明的第二实施方式的制造方法制造的功率模块的剖视图。
具体实施方式
以下，参考附图，对本发明的实施方式进行说明。
1.第一实施方式
＜整体结构＞
第一实施方式中，对将电子组件安装模块适用于功率模块100的例子进行说明。如图2B所示，功率模块100中所使用的功率模块用基板(本发明的绝缘电路基板)10具备作为绝缘层的陶瓷基板11、形成于其一个面的电路层12及形成于另一个面的散热层13。并且，如图3所示，半导体元件(本发明的电子组件)30经由垫片20搭载于该功率模块用基板10的电路层12的表面，引线框40与半导体元件30接合，构成功率模块100。而且，功率模块100中，半导体元件30、功率模块用基板10及引线框40被由环氧树脂等制成的模制树脂50一体地密封。
构成功率模块用基板10的陶瓷基板11例如能够使用AlN(氮化铝)、Si3N4(氮化硅)等氮化物系陶瓷或Al2O3(氧化铝)等氧化物系陶瓷。陶瓷基板11的厚度设定在0.2mm～1.5mm的范围内。
电路层12及散热层13由纯度为99.00质量％以上的铝(所谓的2N铝)、纯度为99.99质量％以上的铝(所谓的4N铝)或铝合金形成。电路层12及散热层13的厚度例如设为0.1mm～5.0mm的厚度。电路层12及散热层13通常形成为平面形状比陶瓷基板11小的矩形。并且，电路层12和散热层13通过Al-Si系、Al-Ge系、Al-Cu系、Al-Mg系或Al-Mn系等合金的钎料与陶瓷基板11接合。另外，电路层12和散热层13通过以下任一种方法形成为所期望的形状：将分别通过冲压加工冲切成所期望的外形的电路层12和散热层13接合到陶瓷基板11、或者将平板状的电路层12和散热层13接合到陶瓷基板11之后，通过蚀刻加工形成为所期望的外形。
垫片20由块形成，所述块由具有导电性的铜或铜合金制成。为了调整电路层12与半导体元件30之间的间隔，垫片20介于它们之间，并将它们电连接。图3中，两个垫片20沿着面方向并排接合到电路层12上。
半导体元件30为具备半导体的电子组件。关于半导体元件30，根据所需功能，选择IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极型晶体管)、MOSFET(Metal OxideSemiconductor Field Effect Transistor：金属氧化物半导体场效应晶体管)、FWD(FreeWheeling Diode：续流二极管)等各种半导体元件。在这种半导体元件30的上面及下面设置有电极，在电路层12与引线框40之间设为电连接状态。图3中，半导体元件30与两个垫片20的每一个接合，在将这些半导体元件30相互连接的状态下设置有引线框。
引线框40由铜或铜合金制成。引线框40例如形成为由无氧铜、韧铜等纯铜、或磷青铜等铜合金制成的带板状，厚度设为0.05mm以上且3.0mm以下。并且，垫片20、半导体元件30、引线框40分别经由银烧结接合层711～713接合到功率模块用基板10的电路层12上。如图3所示，在本实施方式中，这些银烧结接合层711～713中，将接合半导体元件30与垫片20之间的银烧结接合层设为第一银烧结接合层711，将连接半导体元件30与引线框40之间的银烧结接合层设为第二银烧结接合层712，将接合垫片20与电路层12之间的银烧结接合层设为第三银烧结接合层713，从而区分各银烧结接合层712～713。
并且，为了通过第三银烧结接合层713接合垫片20，在电路层12的接合面形成由金(Au)、银(Ag)、镍(Ni)等制成的基底金属层60。另外，虽然省略图示，但是也可以通过电镀、溅射等在垫片20、半导体元件30、引线框40各自的接合预定面形成由金、银、镍等制成的基底金属层。
模制树脂50由环氧系树脂等制成。除功率模块用基板10的散热层13的背面以外，模制树脂50一体地密封散热层13的侧面、陶瓷基板11、电路层12、垫片20、半导体元件30及引线框40与半导体元件30的连接部分的周边。引线框40的端部从模制树脂50拉出到外部。
＜第一实施方式的制造方法＞
接着，对制造如此构成的功率模块100的方法进行说明。该功率模块制造方法中，如图1所示，形成功率模块用基板10[功率模块用基板形成工序]，在该功率模块用基板10的电路层12的接合预定面形成基底金属层60[基底金属层形成工序]。之后，形成在电路层12上依次层叠垫片20、半导体元件30、引线框40而成的层叠体[层叠体形成工序]，一并接合这些层叠体[一并接合工序]之后，使用模制树脂50进行树脂密封[树脂密封工序]，由此形成。以下，按工序顺序进行说明。
[功率模块用基板形成工序]
如图2A所示，在陶瓷基板11的各面经由钎料15层叠成为电路层12的铝板12′和成为散热层13的铝板13′。并且，在层叠方向上对这些层叠结构体施加压力的状态下进行加热，并使钎料15熔融，由此接合各铝板12′、13′和陶瓷基板11，形成具有电路层12和散热层13的功率模块用基板10(参考图2B)。具体而言，将层叠结构体在施加压力的状态下放入炉中，并在真空气氛中在610℃以上且650℃以下的温度下加热1分钟～60分钟。
[基底金属层形成工序]
在层叠体形成工序之前，在电路层12的接合预定面形成由金、银、镍等制成的基底金属层60。基底金属层15能够通过利用电镀、溅射将金、银、镍等形成为薄膜状来获得。并且，电路层12的表面的基底金属层60还能够通过涂布含有玻璃的银膏并进行煅烧来形成。
(使用含有玻璃的银膏的基底金属层形成方法)
对使用含有玻璃的银膏在电路层12的表面形成基底金属层60的方法进行说明。含有玻璃的银膏包含银粉末、玻璃(无铅玻璃)粉末、树脂、溶剂及分散剂，由银粉末和玻璃粉末构成的粉末成分的含量设为含有玻璃的银膏整体的60质量％以上且90质量％以下，剩余部分设为树脂、溶剂、分散剂。关于银粉末，其粒径设为0.05μm以上且1.0μm以下，例如优选平均粒径为0.8μm的银粉末。玻璃粉末包含氧化铋(Bi2O3)、氧化锌(ZnO)、氧化硼(B2O3)、氧化铅(PbO2)、氧化磷(P2O5)中的任意一种或两种以上作为主要成分，其玻璃化转变温度设为300℃以上且450℃以下，软化温度设为600℃以下，结晶化温度设为450℃以上。例如，优选含有氧化铅、氧化锌及氧化硼，且平均粒径为0.5μm的玻璃粉末。
并且，银粉末的重量A与玻璃粉末的重量G的重量比A/G调整在80/20至99/1的范围内、例如A/G＝80/5。关于溶剂，沸点为200℃以上的溶剂较为合适，例如，可使用二乙二醇二丁醚。树脂用于调整含有玻璃的银膏的粘度，并且在350℃以上分解的树脂较为合适。例如，可使用乙基纤维素。并且，可适当地添加二羧酸系分散剂。也可以在不添加分散剂的情况下构成含有玻璃的银膏。
该含有玻璃的银膏通过如下方式来制成：利用混合器将混合银粉末和玻璃粉末而得的混合粉末、及混合溶剂和树脂而得的有机混合物、与分散剂一起进行预混合，一边利用辊式捏合机混炼所获得的预混合物一边进行混合之后，利用浆料过滤器过滤所获得的混炼物。关于该含有玻璃的银膏，其粘度调整为10Pa·s以上且500Pa·s以下，更优选调整为50Pa·s以上且300Pa·s以下。
通过丝网印刷法等将该含有玻璃的银膏涂布于电路层12的接合预定面，干燥之后在350℃以上且645℃以下的温度下经1分钟以上且60分钟以下的时间进行煅烧。由此，如图4所示，形成双层结构的基底金属层60，该双层结构包括形成于接合预定面侧的玻璃层61和形成于该玻璃层61上的银层62。在形成玻璃层61时，熔融去除在电路层12的表面自然发生的氧化铝覆膜12a，在电路层12直接形成玻璃层61，在该玻璃层61上形成银层62。通过该玻璃层61牢固地粘着于电路层12，银层62可靠地保持固定于电路层12上。
含有银或铝中的至少一个的导电性粒子(结晶性粒子)63分散于玻璃层61。推测导电性粒子63在煅烧时析出到玻璃层61内部。并且，微细的玻璃粒子64还分散于银层62的内部。推测该玻璃粒子64是在进行银粒子的煅烧的过程中残留的玻璃成分凝聚而成的。
如此形成的基底金属层60中的银层62的平均晶体粒径调整在0.5μm以上且3.0μm以下的范围内。在此，在加热温度小于350℃及加热温度下的保持时间小于1分钟的情况下，煅烧不足，有可能无法充分地形成基底金属层60。另一方面，在加热温度超过645℃的情况及加热温度下的保持时间超过60分钟的情况下，过度进行煅烧，热处理之后形成的基底金属层60中的银层62的平均晶体粒径有可能不在0.5μm以上且3.0μm以下的范围内。
另外，为了可靠地形成基底金属层60，优选将热处理时的加热温度的下限设为400℃以上，更优选设为450℃以上。并且，加热温度下的保持时间优选设为5分钟以上，更优选设为10分钟以上。另一方面，为了可靠地抑制煅烧的进行，优选将热处理时的加热温度设为600℃以下，更优选设为575℃以下。并且，优选将加热温度下的保持时间设为45分钟以下，更优选设为30分钟以下。
[层叠体形成工序]
在基底金属层形成工序之后，在形成有基底金属层60的电路层12、垫片20、半导体元件30、引线框40之间形成由银膏制成的银膏层701～703，并形成将它们层叠而成的层叠体。如图2C所示，这些银膏层701～703中，将形成于半导体元件30与垫片20之间的银膏层设为第一银膏层701，将形成于半导体元件30与引线框40之间的银膏层设为第二银膏层702，将形成于垫片20与电路层12之间的银膏层设为第三银膏层703，从而区分各银膏层701～703。
银膏层701～703为涂布银膏而形成的层，该银膏含有粒径为0.05μm～100μm的银粉末、树脂及溶剂而成。作为银膏中所使用的树脂，能够使用乙基纤维素等。作为银膏中所使用的溶剂，能够使用α-萜品醇等。作为银膏的组成，银粉末的含量可以设为银膏整体的60质量％以上且92质量％以下，树脂的含量可以设为银膏整体的1质量％以上且10质量％以下，剩余部分可以设为溶剂。
并且，在银膏中还能够含有银膏整体的0质量％以上且10质量％以下的甲酸银、乙酸银、丙酸银、苯甲酸银、草酸银等羧酸系金属盐等的有机金属化合物粉末。并且，根据需要，相对于整体银膏，还能够含有0质量％以上且10质量％以下的醇、有机酸等还原剂。另外，关于该银膏，其粘度调整为10Pa·s以上且100Pa·s以下，更优选调整为30Pa·s以上且80Pa·s以下。
例如，如图2C所示，例如通过丝网印刷法等将该银膏分别涂布于电路层12的基底金属层60上、垫片20的表面、引线框40的表面，并进行干燥，由此形成银膏层701～703。这些银膏层701～703可以形成于接合时对置的接合预定面中的任一个表面。在图2C所示的例子中，在电路层12的表面、垫片20的与半导体元件30对置的侧的表面、引线框40的与半导体元件30对置的侧的表面分别形成有银膏层701～703。
另外，作为银膏层701～703，还能够使用将银粉末替换为氧化银粉末的银膏。该银膏含有氧化银粉末、还原剂、树脂及溶剂，并且除此以外还含有有机金属化合物粉末。氧化银粉末的含量设为银膏整体的60质量％以上且92质量％以下，还原剂的含量设为银膏整体的5质量％以上且15质量％以下，有机金属化合物粉末的含量设为银膏整体的0质量％以上且10质量％以下，剩余部分设为溶剂。
并且，如图2C所示，以在电路层12的第三银膏层703上重叠垫片20，在该垫片20的第一银膏层701上重叠半导体元件30，在该半导体元件30上重叠引线框40的第二银膏层702的方式将它们设为层叠状态，而形成层叠体。
[一并接合工序]
在层叠体形成工序之后，在层叠方向上使1MPa以上且20MPa以下的施加压力作用于层叠体的状态下加热至180℃以上且350℃以下的加热温度。该加热温度的保持时间可以在1分钟以上且60分钟以下的范围内。通过该热处理，烧结银膏层701～703，在电路层12、垫片20、半导体元件30、引线框40相互之间形成银烧结接合层711～713。详细而言，烧结第一银膏层701，形成烧结第一银膏层701而成的第一银烧结接合层711，烧结第二银膏层702，形成烧结第二银膏层702而成的第二银烧结接合层712。并且，烧结第三银膏层703，形成烧结第三银膏层703而成的第三银烧结接合层713。之后，利用这些银烧结接合层711～713一并同时接合电路层12、垫片20、半导体元件30及引线框40。
另外，在使用由包含氧化银和还原剂的银膏制成的银膏层701～703的情况下，在接合(煅烧)时，通过氧化银被还原而析出的还原银粒子变得非常微细至例如粒径为10nm～1μm。因此，可形成致密的银烧结接合层711～713，能够更牢固地接合电路层12、垫片20、半导体元件30及引线框40。
[树脂密封工序]
以上述方式，将垫片20、半导体元件30及引线框40接合到功率模块用基板10之后，除功率模块基板10的散热层13的下面以外，使用模制树脂50一体地密封功率模块用基板10、垫片20、半导体元件30及引线框40的连接部附近。具体而言，例如使用由环氧树脂等制成的密封材料、通过传递模塑方法形成模制树脂50并进行密封。使引线框40的外侧端部从模制树脂50暴露。
如此制造的功率模块100中，半导体元件30在夹在刚性高的功率模块用基板10与引线框40之间的状态下被接合，且被施加压力，由此可抑制翘曲的发生。因此，在不损坏半导体元件30情况下，半导体元件30、功率模块用基板10、垫片20及引线框40能够获得良好的接合状态。并且，能够将垫片20、半导体元件30、引线框40一次接合到功率模块用基板10，制造也变得容易。
2.第二实施方式
图5中示出第二实施方式的功率模块101。在该第二实施方式的功率模块101中，在功率模块用基板10具备散热器80。具备该散热器80的功率模块用基板10中，由铜或铜合金制成的散热器80接合于与第一实施方式相同的功率模块用基板10的散热层13。散热器80例如由无氧铜、韧铜等纯铜、或Cu-Zr合金等铜合金制成。
散热器80具有平板状的顶板部81和一体地突出形成于该顶板部81的一个面的多个销状散热片82。顶板部81的厚度设为0.6mm以上且6.0mm以下。并且，该散热器80的顶板部81的与销状散热片82相反的一侧的表面和散热层13接合。这些散热器80和散热层13通过扩散接合而接合。在该扩散接合中，通过在层叠方向上作用0.3MPa以上且10MPa以下的施加压力并加热至400℃以上且550℃以下的温度来进行。
在具备该散热器80的功率模块用基板10的情况下，虽然省略图示，但是也与第一实施方式同样地，在电路层12、垫片20、半导体元件30、引线框40之间形成银膏层701～703并将它们层叠，而形成层叠体[层叠体形成工序]。之后，在这些层叠体的层叠方向上作用1MPa以上且20MPa以下的施加压力的状态下，以1分钟以上且60分钟以下的保持时间加热至180℃以上且350℃以下的温度，由此将它们一并接合[一并接合工序]。
另外，在一并接合之前，在由铝或铝合金制成的电路层12形成由金、银、镍等制成的基底金属层60。垫片20、半导体元件30、引线框40无需设置基底金属层60，但是可以在各自的接合预定面形成由金、银、镍等制成的基底金属层。
并且，在一并接合工序之后，使用模制树脂50一体地密封至散热器80的顶板部81的上面[树脂密封工序]，由此可制造图5所示的功率模块101。
在具备该散热器80的功率模块101的情况下，散热器80的刚性高，因此防止翘曲的效果变得更高。
在图5所示的例子中，散热器80设为在顶板部81具有销状散热片82的结构，但是可以设为具有板状散热片来代替销状散热片82的结构、隔着分隔壁设置有多个冷却流路的多孔管状的结构、在一个扁平的流路内设置有波板状的散热片的结构、或仅由不具有散热片的平板状的顶板部81构成的结构等。
除此以外，本发明并不限定于上述实施方式，能够在不脱离本发明的宗旨的范围内施加各种变更。
例如，在任一实施方式中，均设置有垫片20，但是在无需调整引线框40的位置的情况等下可以不设置垫片。
并且，在任一实施方式中，均在第一银膏层701与电路层12之间配置有垫片20，但是垫片20可以配置于第二银膏层702与引线框40之间。在该情况下，在层叠体形成工序中在垫片20与引线框40之间形成第三银膏层703。由此，在一并接合工序中，能够烧结第三银膏层703，形成烧结第三银膏层703而成的第三银烧结接合层，从而能够同时接合功率模块用基板10、半导体元件30、垫片20及引线框40。
实施例
制作了如下三种功率模块：不设置垫片，而将半导体元件、引线框一并接合到功率模块用基板的电路层上的功率模块(实施方式1)；经由垫片将半导体元件、引线框一并接合到功率模块用基板的电路层上的功率模块(实施方式2)；经由垫片将半导体元件、引线框一并接合到具备散热器的功率模块用基板的电路层上的功率模块(实施方式3)。
无论在哪种情况下，功率模块用基板均使用厚度为0.635mm的氮化铝作为陶瓷基板，使用厚度为0.4mm的纯度99.99％的铝作为电路层，使用厚度为2.0mm的无氧铜作为垫片，使用厚度为0.15mm的硅片作为半导体元件，使用厚度为1.0mm的无氧铜作为引线框。
电路层表面的基底金属层使用上述的含有玻璃的银膏形成，如图2C所示那样涂布银膏之后，进行层叠并一并接合。改变接合时的加热温度和接合时的施加压力而制作多个试样，并确认了接合性、有无部件的破损、有无半导体元件的破损(元件的破损)。
关于接合性，使用Insight CO.,LTD.制造的超声波图像诊断装置，获取接合界面的超声波探伤像，将接合率为90％以上的情况设为“良”，将小于90％的情况设为“不良”。
关于有无部件的破损，观察电路层的变形程度，将正常的情况设为“良”，将在端部观察到压碎的情况设为“不良”。
关于有无半导体元件的破损，使用Insight CO.,LTD.制造的超声波图像诊断装置，将在半导体元件观察到裂纹的概率为10％以下的情况设为“良”，将在半导体元件观察到裂纹的概率超过10％的情况设为“不良”。
将这些结果示于表1中。
[表1]
实施方式 施加压力 加热温度 接合性 部件的破损 元件的破损
发明例1 1 5MPa 300℃ 良 良 良
发明例2 1 10MPa 300℃ 良 良 良
发明例3 1 20MPa 300℃ 良 良 良
发明例4 2 10MPa 300℃ 良 良 良
发明例5 3 10MPa 300℃ 良 良 良
发明例6 3 10MPa 240℃ 良 良 良
比较例1 1 0.5MPa 300℃ 不良 良 良
比较例2 1 30MPa 300℃ 良 不良 不良
比较例3 1 10MPa 380℃ 良 良 不良
比较例4 1 10MPa 160℃ 不良 良 良
根据该表1明确可知，通过在作用1MPa以上且20MPa以下的施加压力的状态下、在180℃以上且350℃以下的加热温度下进行一并接合，接合性良好，且未确认到部件的破损、半导体元件的破损。
产业上的可利用性
由于一并接合电路层、半导体元件、引线框，因此翘曲的问题得到解决，能够在不产生接合不良、半导体元件的损伤等的情况下进行接合，而且，能够将它们层叠而一次接合，因此电子组件安装模块的制造也变得容易。
符号说明
10-功率模块用基板(绝缘电路基板)，11-陶瓷基板，12-电路层，13-散热层，15-钎料，20-垫片，30-半导体元件(电子组件)，40-引线框，50-模制树脂，60-基底金属层，61-玻璃层，62-银层，701-第一银膏层，702-第二银膏层，703-第三银膏层，711-第一银烧结接合层，712-第二银烧结接合层，713-第三银烧结接合层，80-散热器，100、101-功率模块(电子组件安装模块)。

Claims (4)

1.一种电子组件安装模块的制造方法，其具有层叠体形成工序和一并接合工序，
在所述层叠体形成工序中，在具有陶瓷基板及电路层的绝缘电路基板的该电路层与电子组件的一个面之间形成由银膏制成的第一银膏层，所述电路层与该陶瓷基板接合且由铝或铝合金制成，并且在所述电子组件的另一个面与由铜或铜合金制成的引线框之间形成由银膏制成的第二银膏层，从而形成所述电路层、所述电子组件及所述引线框的层叠体，
在所述一并接合工序中，在所述层叠体形成工序之后，在层叠方向上使1MPa以上且20MPa以下的施加压力作用于所述层叠体的状态下加热至180℃以上且350℃以下的加热温度，由此烧结所述第一银膏层，形成烧结该第一银膏层而成的第一银烧结接合层，并且烧结所述第二银膏层，形成烧结该第二银膏层而成的第二银烧结接合层，从而一并接合所述电路层、所述电子组件及所述引线框。
2.根据权利要求1所述的电子组件安装模块的制造方法，其特征在于，
所述绝缘电路基板具有：
散热层，接合于所述陶瓷基板的与所述电路层的接合面相反的一侧的面，且由铝或铝合金制成；及
散热器，与该散热层接合，且由铜或铜合金制成。
3.根据权利要求1所述的电子组件安装模块的制造方法，其特征在于，
在所述层叠体形成工序中，
进一步在所述第一银膏层与所述电路层之间配置由铜或铜合金制成的垫片，并且在该垫片与所述电路层之间形成由银膏制成的第三银膏层，
在所述一并接合工序中，
在层叠方向上使所述施加压力作用于所述层叠体的状态下加热至所述加热温度，由此烧结所述第三银膏层，形成烧结该第三银膏层而成的第三银烧结接合层，
从而同时接合所述绝缘电路基板、所述垫片、所述电子组件及所述引线框。
4.根据权利要求1所述的电子组件安装模块的制造方法，其特征在于，
在所述层叠体形成工序中，
进一步在所述第二银膏层与所述引线框之间配置由铜或铜合金制成的垫片，并且在该垫片与所述引线框之间形成由银膏制成的第三银膏层，
在所述一并接合工序中，
在层叠方向上使所述施加压力作用于所述层叠体的状态下加热至所述加热温度，由此烧结所述第三银膏层，形成烧结该第三银膏层而成的第三银烧结接合层，
从而同时接合所述绝缘电路基板、所述电子组件、所述垫片及所述引线框。
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