EP2818534B1 - Flüssigkristalline polymerzusammensetzung, flüssigkristallanzeige und herstellungsverfahren dafür - Google Patents
Flüssigkristalline polymerzusammensetzung, flüssigkristallanzeige und herstellungsverfahren dafür Download PDFInfo
- Publication number
- EP2818534B1 EP2818534B1 EP14172512.7A EP14172512A EP2818534B1 EP 2818534 B1 EP2818534 B1 EP 2818534B1 EP 14172512 A EP14172512 A EP 14172512A EP 2818534 B1 EP2818534 B1 EP 2818534B1
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- EP
- European Patent Office
- Prior art keywords
- liquid crystal
- recess
- array substrate
- layer
- barrier ribs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 93
- 238000000034 method Methods 0.000 title claims description 69
- 239000000203 mixture Substances 0.000 title claims description 44
- 229920000106 Liquid crystal polymer Polymers 0.000 title claims description 40
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 20
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- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 60
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- 238000005286 illumination Methods 0.000 claims description 31
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- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 claims description 15
- 125000004122 cyclic group Chemical group 0.000 claims description 15
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims description 15
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- LVGFPWDANALGOY-UHFFFAOYSA-N 8-methylnonyl prop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C=C LVGFPWDANALGOY-UHFFFAOYSA-N 0.000 claims description 7
- ZMTBGVBNTHTBEC-UHFFFAOYSA-N (3,3,5-trimethylcyclohexyl) prop-2-enoate Chemical compound CC1CC(OC(=O)C=C)CC(C)(C)C1 ZMTBGVBNTHTBEC-UHFFFAOYSA-N 0.000 claims description 6
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- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 claims description 6
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- XOALFFJGWSCQEO-UHFFFAOYSA-N tridecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCOC(=O)C=C XOALFFJGWSCQEO-UHFFFAOYSA-N 0.000 claims description 6
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
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- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 claims description 4
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
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- -1 2,6-difluoro-3-(1H-pyrrol-1-yl)-phenyl Chemical group 0.000 claims description 3
- PUBNJSZGANKUGX-UHFFFAOYSA-N 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=C(C)C=C1 PUBNJSZGANKUGX-UHFFFAOYSA-N 0.000 claims description 3
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 claims description 3
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- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 claims description 3
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 3
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- 230000002708 enhancing effect Effects 0.000 description 3
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- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical compound C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 description 2
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- 238000005191 phase separation Methods 0.000 description 2
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- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- OYKPJMYWPYIXGG-UHFFFAOYSA-N 2,2-dimethylbutane;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(C)(C)C OYKPJMYWPYIXGG-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
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- 239000012949 free radical photoinitiator Substances 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Images
Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K19/00—Liquid crystal materials
- C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
- C09K19/54—Additives having no specific mesophase characterised by their chemical composition
- C09K19/542—Macromolecular compounds
- C09K2019/546—Macromolecular compounds creating a polymeric network
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133519—Overcoatings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13398—Spacer materials; Spacer properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Claims (9)
- Eine Flüssigkristall-Polymer-Zusammensetzung, aufweisend:ein Flüssigkristall;Acryl-Monomere, die eine Acrylmonomer-Gruppe A, die einen zyklischen Ring aufweist, und eine Acrylmonomer-Gruppe B, die eine Kettenstruktur oder ein Cyclohexanol aufweist, aufweisen; undeinen Photo-Initiator;wobei die Acrylmonomer-Gruppe A, die einen zyklischen Ring aufweist, Isobornyl-Acrylat ist,wobei die Acrylmonomer-Gruppe B, die eine Kettenstruktur aufweist, eines oder mehrere ausgewählt aus der Gruppe bestehend aus 2-Methylheptyl-Acrylat, Isodecyl-Acrylat, Octyldecyl-Acrylat und Tridecyl-Acrylat ist,wobei die Acrylmonomer-Gruppe B, die Cyclohexanol aufweist, 3,3,5-Trimethyl-cyclohexanol-Acrylat ist,wobei ein Mengenverhältnis zwischen dem Flüssigkristall und den Acrylmonomeren 8:2 bis 9:1 beträgt, undwobei in den Acrylmonomeren ein Mengenverhältnis zwischen der Acrylmonomer-Gruppe A, die einen zyklischen Ring aufweist, und der Acrylmonomer-Gruppe B, die eine Kettenstruktur oder ein Cyclohexanol aufweist, 8:2 bis 9:1 beträgt, wobei ein Mengenverhältnis zwischen den Acrylmonomeren und dem Photo-Initiator 7:3 bis 9:1 beträgt.
- Die Flüssigkristall-Polymer-Zusammensetzung gemäß Anspruch 1, wobei der Photo-Initiator irgendeines ausgewählt aus der Gruppe bestehend aus 2-Benzyl-2-dimethylamino-1-(4-morpholinophenyl)-Butanon-1), Phenyl-bis(2,4,6-trimethylbenzoyl)-Phosphinoxid, Bis(.eta.5-2,4-cyclopentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrol-1-yl)-phenyl)Titan, Bis(2,4,6-trimethylbenzoyl)-Phenylphosphinoxid, 2-Dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-Butan-1-on, 2-Hydroxy-1-[4-(2-Hydroxyethoxy)phenyl]-2-methyl-1-Propanon, 1-[9-Ethyl-6-(2-methylbenzoyl)-9Hcarbazol-3-yl],1-(0-Acetyloxim), 1-Hydroxy-cyclohexyl-phenyl-Keton, Oxy-phenyl-Essigsäure-2-[2oxo-2phenyl-acetoxy-ethoxy]-Ethylester, 2-Vethyl-1-[4-(methylthio)phenyl]-2-(4-morpholinyl)-1-Propanon), 2,4,6-Trimethylbenzoyldiphenylphosphinoxid, 2-Hydroxy-2-methyl-1-phenyl-Propan-1-on), und 2,2,-Dimethoxy-1,2-Diphenylethan-1-on ist.
- Eine Flüssigkristall-Anzeigevorrichtung, die eine Flüssigkristallschicht, die zwischen ein Dünnschichttransistor (TFT)-Matrixsubstrat und ein Farbfilter-Matrixsubstrat eingefügt ist, aufweist, die Flüssigkristall-Anzeigevorrichtung aufweisend:Barriererippen, die innerhalb der Flüssigkristallschicht angeordnet sind und das TFT-Matrixsubstrat und das Farbfilter-Matrixsubstrat stützen,wobei die Barriererippen mittels Aushärtens von Acrylmonomeren einer Flüssigkristall-Polymer-Zusammensetzung gemäß Anspruch 1 oder 2 gebildet sind.
- Die Flüssigkristall-Anzeigevorrichtung gemäß Anspruch 3, wobei das TFT-Matrixsubstrat aufweist:eine organische isolierende Schicht, die TFTs schützt;eine Pixelelektrode, die auf der organischen isolierenden Schicht angeordnet ist;eine Passivierungs-Schicht, die auf der Pixelelektrode angeordnet ist; undeine gemeinsame Elektrode, die auf der Passivierungs-Schicht angeordnet ist.
- Die Flüssigkristall-Anzeigevorrichtung gemäß Anspruch 4, wobei die Barriererippen derart angeordnet sind, dass sie mindestens eine Aussparung, die in der Passivierungs-Schicht gebildet ist, auffüllen,
wobei die mindestens eine in der Passivierungs-Schicht gebildete Aussparung zu einer Gate-Leitung korrespondierend angeordnet ist,
wobei das Farbfilter-Matrixsubstrat eine Überzugschicht, die Schwarzmatrizen und Farbfilter bedeckt, aufweist,
wobei die Barriererippen derart angeordnet sind, dass sie mindestens eine Aussparung, die in der Überzugschicht gebildet ist, auffüllen. - Ein Verfahren zum Herstellen einer Flüssigkristall-Anzeigevorrichtung, das Verfahren aufweisend:Bilden einer Zelle mittels Befestigens eines Dünnschichttransistor (TFT)-Matrixsubstrats und eines Farbfilter-Matrixsubstrats;Injizieren einer Flüssigkristall-Polymer-Zusammensetzung, die ein Flüssigkristall, Acryl-Monomere, die eine Acrylmonomer-Gruppe A, die einen zyklischen Ring aufweist, und eine Acrylmonomer-Gruppe B, die eine Kettenstruktur oder ein Cyclohexanol aufweist, aufweisen, und einen Photo-Initiator aufweist, in die Zelle; undBestrahlen der Zelle mit UV-Licht zum Aushärten der Acrylmonomere zum Bilden von Barriererippen,wobei das Bestrahlen der Zelle mit UV-Licht einen ersten UV-Bestrahlungsvorgang, einen Raumtemperatur-Ruheprozess und einen zweiten UV-Bestrahlungsvorgang aufweist,wobei in dem ersten UV-Bestrahlungsvorgang eine Bestrahlungsintensität von 1 mW bis 20 mW reicht und eine Zeitdauer für die UV-Bestrahlung von 5 Minuten bis 60 Minuten reicht,wobei in dem Raumtemperatur-Ruheprozess die Zelle für 60 Minuten bis 200 Minuten ruhen gelassen wird, undwobei in dem zweiten UV-Bestrahlungsvorgang eine Bestrahlungsintensität von 50 mW bis 1500 mW reicht und eine Zeitdauer für die UV-Bestrahlung von 1 Minute bis 20 Minuten reicht, wobei in dem zweiten UV-Bestrahlungsvorgang die Temperatur 60°C oder niedriger ist.
- Das Verfahren gemäß Anspruch 6, wobei das Bilden des TFT-Matrixsubstrats aufweist:Bilden eines TFTs auf einem unteren Substrat;Bilden einer organischen isolierenden Schicht auf dem TFT;Strukturieren der organischen isolierenden Schicht zum Bilden eines Kontaktloches und mindestens einer ersten Aussparung;Bilden einer Pixelelektrode auf der organischen isolierenden Schicht;Bilden einer Passivierungs-Schicht auf der organischen isolierenden Schicht und der Pixelelektrode zum Bilden von mindestens einer zweiten Aussparung korrespondierend zu der mindestens einen ersten Aussparung; undBilden einer gemeinsamen Elektrode auf der Passivierungs-Schicht,wobei die Barriererippen derart angeordnet sind, dass sie die mindestens eine zweite Aussparung, die in der Passivierungs-Schicht gebildet ist, auffüllen.
- Das Verfahren gemäß Anspruch 7, wobei das Bilden des Farbfilter-Matrixsubstrats aufweist:Bilden von Schwarzmatrizen und Farbfiltern auf einem oberen Substrat;Bilden einer Überzugschicht auf den Schwarzmatrizen und den Farbfiltern; undStrukturieren der Überzugschicht zum Bilden von mindestens einer dritten Aussparung,wobei die Barriererippen derart angeordnet sind, dass sie mindestens eine dritte Aussparung, die in der Überzugschicht gebildet ist, auffüllen.
- Das Verfahren gemäß Anspruch 7 oder 8, wobei die mindestens eine erste Aussparung und die mindestens eine zweite Aussparung korrespondierend zu einer Gate-Leitung angeordnet sind.
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2014
- 2014-06-16 EP EP14172512.7A patent/EP2818534B1/de not_active Not-in-force
- 2014-06-24 JP JP2014129078A patent/JP5970502B2/ja not_active Expired - Fee Related
- 2014-06-25 CN CN201410290257.5A patent/CN104252066B/zh not_active Expired - Fee Related
- 2014-06-27 US US14/317,964 patent/US9507215B2/en not_active Expired - Fee Related
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2016
- 2016-09-27 US US15/277,364 patent/US10228591B2/en active Active
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2019
- 2019-01-24 US US16/256,610 patent/US10670927B2/en active Active
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US20190155083A1 (en) | 2019-05-23 |
CN104252066A (zh) | 2014-12-31 |
US20170023819A1 (en) | 2017-01-26 |
US10228591B2 (en) | 2019-03-12 |
EP2818534A1 (de) | 2014-12-31 |
US10670927B2 (en) | 2020-06-02 |
JP2015011350A (ja) | 2015-01-19 |
CN104252066B (zh) | 2017-05-03 |
US20150002774A1 (en) | 2015-01-01 |
US9507215B2 (en) | 2016-11-29 |
JP5970502B2 (ja) | 2016-08-17 |
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