EP2396814A2 - Procédé pour créer une liaison résistant aux températures élevées et aux changements de température d'un semi-conducteur de module et d'un composant semi-conducteur avec un procédé agissant sur la température - Google Patents

Procédé pour créer une liaison résistant aux températures élevées et aux changements de température d'un semi-conducteur de module et d'un composant semi-conducteur avec un procédé agissant sur la température

Info

Publication number
EP2396814A2
EP2396814A2 EP10710533A EP10710533A EP2396814A2 EP 2396814 A2 EP2396814 A2 EP 2396814A2 EP 10710533 A EP10710533 A EP 10710533A EP 10710533 A EP10710533 A EP 10710533A EP 2396814 A2 EP2396814 A2 EP 2396814A2
Authority
EP
European Patent Office
Prior art keywords
temperature
connection
sintering
semiconductor
suspension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP10710533A
Other languages
German (de)
English (en)
Inventor
Mathias Kock
Ronald Eisele
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Silicon Power GmbH
Original Assignee
Danfoss Silicon Power GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power GmbH filed Critical Danfoss Silicon Power GmbH
Publication of EP2396814A2 publication Critical patent/EP2396814A2/fr
Ceased legal-status Critical Current

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Definitions

  • the invention relates to a method for creating a high-temperature and temperature-resistant connection of a module semiconductor and a semiconductor device with a temperature-applying method.
  • a complex step in the production of sintered compounds as described for example in DE 10 2006 033 073 B3 of the Applicant, are in the actual sintering (the so-called final sintering) required pressures of more than 30 MPa, by a special apparatus have to be applied for a few seconds to a few minutes.
  • the invention is based on the finding that by selecting a suitable metal powder suspension by activating this, either by local, low pressure of for example 5 MPa or by heating to z. B. 25O 0 C, the sintering process can be initiated so far that a transport-resistant fixation for processing by further manufacturing steps takes place.
  • an electrical component with metallic contact surfaces with either a silver or a gold surface by materially joined to a substrate material in several stages of production, without a critical sintering pressure is applied.
  • circuit substrate can be used as a substrate material, such as.
  • a substrate material such as.
  • organic printed circuit boards PCB, ceramic circuit boards, DCB, metal core circuit boards, IMS or conductor leadframes, stamped grid, hybrid ceramic circuit carrier, etc.
  • the electrotechnical component can be an inexhaustible Halbeiterbauelement or a gemoldetes, d. H. be cased semiconductor device.
  • Electrical contact terminals SMD-B auimplantation or the like can also be connected to each other with the cohesive joining method according to the invention.
  • connection tact-fast ie when heated for a few seconds.
  • Fixing and sintering are separate processes. The fixing takes place predominantly by a clawing in the surface of the joining partners or the silver joining layers.
  • the subsequent sintering is carried out without pressure in a heating furnace at temperatures between 170 ° C to 300 ° C, so it may be easily inserted in a transport line for components.
  • the atmosphere for certain metal suspension layers can optionally be adjusted with an inert or reactive gas. Nitrogen is suitable as the inert gas, for example, and forming gas or inert gas saturated with formic acid can be used as the reactive gas.
  • FIG. 1 shows a metallized device placed over a precoated and dried metal suspension layer.
  • FIG. 3 shows the elements of FIG. 2 after an unpressurised temperature control step, which ensures preferably complete volume sintering, FIG.
  • FIG. 4 shows a lower and further metallized component on a previously applied and dried metal suspension layer as in Fig. 1,
  • FIG. 6 shows the elements of FIG. 5, wherein the contact tab with the other elements is fixed by low pressure
  • FIG. 7 shows the elements of FIG. 6 after a pressure-free tempering step, which ensures a preferably complete volume sintering of all fixed contact positions
  • a substrate material or a chip backside, or in a preferred embodiment on both surfaces to be joined, is applied in a uniform layer thickness by means of a layer containing silver particles, preferably with a stencil printer. This is done selectively at the points where the device is to be placed or, if applied to the chip, a full surface.
  • Other application techniques, in particular spraying, are conceivable.
  • diving or spin-on of a silver particle solution would cause problems with layer-wide variance.
  • the layer After application, the layer is dried and freed from the volatile organic compounds. Temperatures of up to 150 0 C support the process to ensure high clock rates. The dried layer produced thereby has a large porosity and a large roughness.
  • the electrotechnical component is brought to a predetermined position by a component gripping and depositing device and unilateral or bilateral silver layers applied to the components are pressed together by the force applied during the application and clawed together. This is a short 0.1 to 3 second placement process, with the required force only enough to reshape the rough surface and claw each other.
  • the bracket by Verkrallen does not have to meet the requirements for later use but only be so strong that during the process of locomotion in the manufacture of the components no longer slip.
  • the two-dimensional clawing of the rough dried metal layer in a silver or gold surface provides for easy adhesion.
  • a snowball sticks to a cement wall, or even snow, when a snowball is formed.
  • the adhesion can be improved again by increasing the temperature up to, for example, 150 ° C. In the example "snow" this would be equivalent to a wet snow.
  • Step 4 In a fourth step, the component thus fixed is finally subjected to a subsequent heat process without further pressure, wherein a diffusion of the silver atoms into the interface of the joining partner and vice versa takes place, so that the desired high temperature and temperature change resistant, for motor vehicle applications also stable connection over many years.
  • FIG. 1 shows a pre-metallized component which is precoated with an example of about 50 micrometers and at a temperature of about 50 micrometers. temperature of less than 140 ° C for a few minutes (preferably 1-3 minutes) dried metal suspension layer is placed. A suitable pre-compaction of the layer in order to store it better, and to avoid abrasion, may have already taken place on the layer before the component is fixed.
  • a layer produced in the same or a similar way - even in order to use it as similar to a pre-metallization - may also have already been sintered. It is sufficient if a layer still consists only of dried, non-sintered paste / suspension.
  • a pressure of 1-10 MPa, preferably 2-6 MPa, and herein more preferably for a second less than 5 MPa can be exercised.
  • Fig. 3 shows the elements of FIG . 2 after a non-pressurized tempering, at paste-dependent temperatures of typically more than 230 0 C, which ensures a preferably complete volume sintering. Reactive process gases can accelerate sintering.
  • Figs. 4 to 7 show, as representative of many possible elements, a contact tab is fixed by low pressure with the assembly in the same way.
  • the erfmdungshacke method for creating a high-temperature and tempe- ratur pizzafesten connection of a module semiconductor and a semiconductor device with a temperaturbeetzier waveden method in which a metal powder suspension is applied to the areas of the individual semiconductor devices to be joined later, the suspension layer with outgassing of the volatile constituents and dried to form a porous layer, then precompressed the porous layer, without a complete, the Sus- pensionstik penetrating sintering takes place, wherein to obtain a solid electrically and thermally well-conductive compound of a semiconductor device on a connection partner from the group: substrate, further semiconductor or circuit carrier, the compound is a sintered compound produced without pressing pressure by increasing the temperature, which consists of a dried metal powder suspension consists, in a Vorverdichtungsuze with the connection partner has undergone a first transport-resistant contact with the connection partner, and was solidified under temperature Ausausung unpressurized in a preferred embodiment can be extended daurch that more than one side of
  • the atmosphere in a sealed chamber
  • the atmosphere may be enriched with an inert or reactive gas during heating.
  • the inert gas may preferably contain nitrogen as a main component.
  • the reactive gas proposed is one with a predominant constituent of forming gas.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Filtering Materials (AREA)

Abstract

L'invention concerne un procédé pour créer une liaison résistant aux températures élevées et aux changements de température d'un semi-conducteur de module et d'un composant semi-conducteur avec un procédé agissant sur la température, selon lequel sur les région des composants semi-conducteurs à relier plus tard, une suspension de poudre métallique est appliquée, la couche de suspension est séchée par élimination sous forme de gaz des composants volatiles et en produisant une couche poreuse, la couche poreuse est précompactée sans qu'ait lieu un frittage complet à travers la couche de suspension et pour obtenir une liaison fixe électriquement et thermiquement bonne conductrice d'un composant semi-conducteur sur un partenaire de liaison du groupe: substrat, autre semi-conducteur ou porte-circuit, la liaison est une liaison frittée produite sans compression par élévation de la température qui est constituée d'une suspension de poudre métallique séchée qui a subi lors d'une étape de précompactage avec le partenaire de liaison un premier contact résistant au transport avec le partenaire de liaison et a été consolidée sans pression en se frittant sous l'effet de la température.
EP10710533A 2009-02-13 2010-02-04 Procédé pour créer une liaison résistant aux températures élevées et aux changements de température d'un semi-conducteur de module et d'un composant semi-conducteur avec un procédé agissant sur la température Ceased EP2396814A2 (fr)

Applications Claiming Priority (2)

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DE102009008926.8A DE102009008926B4 (de) 2009-02-13 2009-02-13 Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens
PCT/DE2010/000127 WO2010091660A2 (fr) 2009-02-13 2010-02-04 Procédé pour créer une liaison résistant aux températures élevées et aux changements de température d'un semi-conducteur de module et d'un composant semi-conducteur avec un procédé agissant sur la température

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EP2396814A2 true EP2396814A2 (fr) 2011-12-21

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US (1) US9287232B2 (fr)
EP (1) EP2396814A2 (fr)
JP (1) JP5731990B2 (fr)
CN (1) CN102396057B (fr)
DE (1) DE102009008926B4 (fr)
WO (1) WO2010091660A2 (fr)

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WO2010091660A2 (fr) 2010-08-19
US9287232B2 (en) 2016-03-15
JP5731990B2 (ja) 2015-06-10
CN102396057B (zh) 2014-04-02
DE102009008926B4 (de) 2022-06-15
WO2010091660A3 (fr) 2011-06-03
CN102396057A (zh) 2012-03-28
JP2012517704A (ja) 2012-08-02
US20120037688A1 (en) 2012-02-16
DE102009008926A1 (de) 2010-08-19

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