EP2382659A1 - Composant électrique ou électronique composite et procédé de fabrication d'un composant électrique ou électronique composite - Google Patents

Composant électrique ou électronique composite et procédé de fabrication d'un composant électrique ou électronique composite

Info

Publication number
EP2382659A1
EP2382659A1 EP09764842A EP09764842A EP2382659A1 EP 2382659 A1 EP2382659 A1 EP 2382659A1 EP 09764842 A EP09764842 A EP 09764842A EP 09764842 A EP09764842 A EP 09764842A EP 2382659 A1 EP2382659 A1 EP 2382659A1
Authority
EP
European Patent Office
Prior art keywords
sintered
joining partner
joining
molded part
composite component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09764842A
Other languages
German (de)
English (en)
Inventor
Martin Rittner
Erik Peter
Michael Guenther
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2382659A1 publication Critical patent/EP2382659A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
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    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83205—Ultrasonic bonding
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    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Definitions

  • the invention relates to an electrical or electronic composite component according to the preamble of claim 1 and to a method for producing an electrical or electronic composite component according to claim 8.
  • NTV Low Temperature Connection Technology
  • the sintering of silver metal nanoparticles offers the option to perform the sintering process with significantly less pressure from a pressure range between about 10OkPa and 5MPa.
  • oxygen and a process temperature of about 280 ° C. are also required for sintering nanoparticles.
  • the known silver metal nanoparticle paste formulation contains an even higher organic content, such as solvents and / or binders, than silver metal flake-based paste formulations.
  • sintering paste is applied directly to the first and / or the second joining partner, whereupon the joining partners are pressed against one another under the influence of temperature.
  • the invention is based on the object, an electronic or electrical
  • Composite component and to propose a manufacturing method for such a composite component in which cracking during joining can be avoided.
  • the composite component should be inexpensive to produce and reliable at thermal cycling.
  • the invention is based on the idea not to connect at least two joining partners as in the prior art directly by means of sintering paste, i. but to fix the joining partners firmly, dispensing with sintering paste with a previously prepared sintered molding with a continuous open porosity.
  • the thickness extension of the sintered shaped part (sintered foil) used in the stacking direction of the joining partners is preferably between about 10 ⁇ m and about 300 ⁇ m or more.
  • Such a sintered molded part has the advantage of already integrated and in the subsequent joining process with the joining partners of stable gas ducts for the ventilation, which, for example, by soldering, welding or gluing forming joint.
  • a porous sintered molded part as an insert or insert has a positive effect on the joining process for joining the joining partners with the sintered molded part, especially when large-area joining partners, such as silicon power semiconductors and circuit carriers or circuit substrate and heat sinks are connected to the sintered molded part. It is also possible to connect punched grid over a sintered molded part.
  • Another advantage of the use of a sintered molded part is that the freedom in the design of the joint can be extended, since the sintered molded part can have a larger area than at least one of the joining partners, preferably as both joining partners, and / or the joining partners much further apart can be, than at the
  • the invention can be used in a variety of electrical and / or electronic
  • power electronic modules which are required, for example, for many forms of energy conversion, in particular mechanically / electrically (generator, rectifier), electrical / electrical (converter, AC / AC, DC / DC) and also electrical / mechanical ( electric drives, change direction).
  • suitably designed power electronic modules for the rectifier be used in a motor vehicle generator, for controlling electric drives, for DC / DC converters, for a pulse change direction, for hybrid / FC / E drives and for photovoltaic inverters, etc.
  • individual Components with higher power losses, in particular on the lead frames of discrete packages, are joined according to the invention, which then, for example, in the case of the absence of lead, can be used as completely lead-free solutions in printed circuit board technology.
  • the implementation of the invention is particularly preferred in constructions with semiconductor laser diodes or in MEMs and sensors, in particular for high-temperature applications. Further application examples are semiconductor light-emitting diodes and high-frequency semiconductors for radar applications.
  • Sintered molded parts made of silver metal or silver metal are advantageous in view of the high electrical and thermal conductivity.
  • silver is suitable for realizing a continuous, gas channel forming, porosity.
  • the first and / or the second joining partner is / are sintered with the sintered part without additional sintering paste.
  • the sintered molded part enters into a binding to the at least one joining partner, i. becomes sinterable.
  • solder at least one joining partner preferably both joining partners
  • solder paste solder powder or a solder preform (in general: brazing material).
  • the solder material passes through the effect of temperature in a liquid phase and connects the sintered molded part with the at least one joining partner.
  • the solder material is lead-free solder paste,
  • lead-containing solder pastes especially standard solder pastes to see. Due to its porous structure, the sintered part used is ideal for entering into a robust solder joint.
  • the "buffering" effect of the sintered molded article significantly reduces the effect of thermo-mechanical stresses which destroy the pure solder material, in particular during later use of the electrical or electronic composite component Joining partners as well as on the then serving as a depot sintered molding, in particular imprinted or dispenst, or alternatively only on both sides of the sintered molding, or alternatively only on one side of the sintered molding and on only one joining partner It is also possible, in a solder paste printing process upstream of the actual soldering process, to apply a solder deposit to the subsequent joints for the placement of SMD components and subsequent reflow soldering n. In this case, only one more flux is needed at these locations.
  • the porous structure of the sintered molding brings with it sufficient opportunities for the degassing of the flux system with it.
  • Another way of connecting at least one joining partner with the sintered molded part is to glue the joining partner with the sintered molded part, in particular by Leitkleben.
  • more preferably silver-containing (filled with silver) adhesives are used, which find an ideal connection surface in the sintered molded part.
  • the surface of the preferably silver-containing or consisting of silver sintered molding can be optimally in a welding process with at least one joining partner, preferably with two joining partners connect.
  • the first joining partner is very particularly preferably an electronic component, preferably a semiconductor component, very particularly preferably a power semiconductor, which can be connected via a sintered molded part to the second joining part, in particular a circuit carrier (printed circuit board).
  • first joining partner designed as a circuit carrier via a sintered shaped part to a second joining partner, preferably a second base plate, preferably a copper base plate.
  • a second joining partner preferably a second base plate, preferably a copper base plate.
  • the copper base plate serves as a heat sink or is with a as
  • Heat sink serving heatsink connected It is also possible to connect the heat sink (first joining partner) to the base plate (second joining partner) via a sintered shaped part. Furthermore, it is possible to connect via a sintered molded part at least one bonding wire or at least one bonding ribbon to a further joining partner, in particular an electronic component, preferably a semiconductor component, in particular a power semiconductor component or a circuit carrier (electrical component), i. to contact.
  • the sintered molded part increases reliability.
  • the first joining partner to be, for example, an electrical component, in particular a stamped grid, which can be connected via a sintered shaped part to a second joining partner, in particular a circuit carrier, more precisely a metal of the circuit carrier.
  • sintered components is not limited to composite components with only two
  • Joining partners limited.
  • a sandwich-like structure comprising three or more joining partners can be produced, wherein the joining partners and the sintered shaped parts are preferably stacked in a stacking direction.
  • one of a Semiconductor formed second joining partner on both sides via a respective sintered molded part with a first or a second joining partner forming circuit carrier are connected so that the power semiconductor is sandwiched between the circuit carriers, and wherein in each case between a circuit carrier and the power semiconductor is a sintered molded part.
  • the sandwich construction does not necessarily have to be realized in one process step, but can also be produced, for example, in two or more stages.
  • the invention also leads to a method for producing an electrical or electronic composite component, preferably a composite component designed as described above.
  • the core of the method is to connect at least two joining partners with an open porous sintered part (sintered film), preferably by direct sintering without sintering paste, by soldering by means of a solder material, in particular lead-free solder material, preferably with solder paste, by gluing, in particular Leitkleben preferably using a silver-containing adhesive or alternatively by welding, in particular friction welding, ultrasonic welding or resistance welding.
  • the advantage of the method according to the invention is that gases escape during the bonding process with the joining partners as a result of the continuously open-porous structure of the sintered molded part and, if required, gases, such as oxygen, can be passed to the joints, so that cracking is avoided.
  • gases such as oxygen
  • 1 is a power electronic composite component (here power electronic module / module),
  • FIG. 2 is a fragmentary view of a sintered molded part for interconnecting two joining partners
  • 3 schematically shows a manufacturing process for producing an electrical or electronic composite component, comprising two joining partners
  • FIG. 4 shows a schematic representation of a production process for producing an electrical or electronic composite component with three joining partners and two sintered shaped parts.
  • the 1 shows an electronic composite component 1. This comprises a first joining partner 2, a second joining partner 3 and a third joining partner 4.
  • the first joining partner 2 is a power semiconductor component, here an IGB transistor
  • the second joining partner 3 is a circuit carrier
  • the third joining partner 4 is a base plate made of copper.
  • the base plate made of copper is in turn fixed to a heat sink 5 (heat sink).
  • a sintered shaped part 6 is arranged with a thickness extension of about 50 microns in a stacking direction S.
  • the first joint partner 2 and the second joint partner 3 are fixed on two opposite sides of the sintered molded part 6 respectively by soldering by means of solder paste (alternatively, for example, solder powder or solder preform).
  • the sintered shaped part 6 is formed of silver sintered material.
  • the second joining partner 3 is in turn connected via a further sintered shaped part 7, which is identical to the sintered shaped part 6, with the third joining partner 4, wherein also the third joining partner 4 and the second joining partner 3 are respectively fixedly connected to the further sintered shaped part 7 by soldering , Alternatively, a mutually different shape of the sintered moldings 6, 7 is possible.
  • the third joining partner 4 is soldered directly to the heat sink 5.
  • Alternatively may be provided between the third joining partner 4 and the heat sink 5 and a sintered molded part, with which the third joining partner 4 and the heat sink 5, for example are determined by direct sintering without sintering paste, by soldering, gluing or welding.
  • a plastic housing 8 is fixed to the third joining partner 4 formed by the base plate, which encloses the stack arrangement comprising the first and the second joining partners 2, 3 as well as the sintered shaped part 6.
  • the so-called stacked arrangement is surrounded by an elastic protective compound 9.
  • connecting wires 10, 11 are guided up to the outside of the housing 8, which are fixed via the sintered shaped part 6 to the second joining partner 3 (circuit carrier), contacting it.
  • Fig. 2 shows the structure of a sintered compact 6, which is made of silver metal flakes. Evident is the continuous open porosity. This forms gas passageways, through which gases can flow away from the joints to the outside or to the joints. The gases preferably emerge laterally, ie transversely to the stacking direction S (see FIG. 1), out of the pores or the gas channels formed by them, as a result of which crack formation, in particular during a possible soldering process, is avoided.
  • FIG. 3 shows a highly schematic representation of the manufacturing process for producing an electrical or electronic composite component 1 shown on the right in the drawing plane.
  • the latter comprises a first in the drawing plane upper joint partner 2 and a second in the plane of the drawing lower joining partner 3, which receive a sintered molded part 6 sandwiched between them.
  • the first joining partner 2 is, for example, a chip and the second joining partner 3 is a circuit carrier.
  • the first joining partner 2 is a circuit carrier and the second joining partner 3 is a base plate, in particular made of copper, and / or a heat sink (heat sink). Further combinations of the first and second joining partners 2, 3 resulting from the arrival claims are alternatively feasible.
  • a solder material 12 in particular solder paste or a solder preform, was first applied as a depot to both surface sides of the sintered shaped part 6.
  • a flux application preferably follows at the joints. After stacking in the stacking direction S, the joining partners 2, 3, the sintered shaped part 6 and the brazing material 12 are fed to a joining process 13, here a brazing process.
  • the gas Exchange for brazing the brazing material 12 may take place over the entire porous volume of the sintered compact 6.
  • the second joining partner 3 may be a circuit carrier, in particular the metal of a circuit carrier, typically copper or a copper alloy, and the first joining partner 2 may be a stamped grid, typically copper or a copper alloy.
  • Adhesive 14, in particular silver-containing adhesive 14, can for example be printed or dispensed onto the second joining partner 3.
  • the sintered molded part 6 can already bring an adhesive depot on the opposite side for the first joining partner 2 (stamped grid) with it.
  • the adhesive 14 is applied in a downstream process, such as dispensing, as an adhesive depot.
  • the first joining partner 2 is placed on the adhesive 14 and exposed to a curing process, preferably under temperature and / or pressure.
  • the adhesive 14 or its constituents can / can outgas through the porous structure of the sintered molding.
  • the joining partners 2, 3 with the sintered molded part 6 by welding.
  • the welding process may, but not necessarily, be carried out by means of an auxiliary material 15.
  • the auxiliary material depots according to FIG. 3 are not necessary.
  • FIG. 4 shows in the plane of the drawing on the right a multipart electrical or electronic composite component 1.
  • This comprises a total of three joining partners 2, 3, 4, wherein between two joining partners 2, 3; 3, 4 a sintered molded part 6, 7 is arranged.
  • the first and third joining partners 2, 4 may be a circuit carrier and the central one, i. inner joining partner 3 act for a power semiconductor.
  • the sandwich structure does not necessarily have to be joined in a common joining process, but also a two-stage sequential process management can be realized, for example, first the first joining partner 2, the sintered shaped part 6, the second joining partner 3 and then subsequently the third joining partner 4, or alternatively next to the third joining partner 4, the further sintered shaped part 7, the second joining partner 3 and then downstream of the first joining partner. 2

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

L'invention concerne un composant électrique ou électronique composite (1), comprenant un premier partenaire d'assemblage (2) et au moins un deuxième partenaire d'assemblage (3). Selon l'invention, une pièce frittée à pores ouverts (6, 7) est logée entre le premier et le deuxième partenaire d'assemblage (2, 3) et fixée solidement au premier et au deuxième partenaire d'assemblage (2, 3).
EP09764842A 2008-12-23 2009-12-07 Composant électrique ou électronique composite et procédé de fabrication d'un composant électrique ou électronique composite Withdrawn EP2382659A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008055134A DE102008055134A1 (de) 2008-12-23 2008-12-23 Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
PCT/EP2009/066518 WO2010072555A1 (fr) 2008-12-23 2009-12-07 Composant électrique ou électronique composite et procédé de fabrication d'un composant électrique ou électronique composite

Publications (1)

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EP2382659A1 true EP2382659A1 (fr) 2011-11-02

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EP09764842A Withdrawn EP2382659A1 (fr) 2008-12-23 2009-12-07 Composant électrique ou électronique composite et procédé de fabrication d'un composant électrique ou électronique composite

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Country Link
US (1) US20110304985A1 (fr)
EP (1) EP2382659A1 (fr)
JP (1) JP5602763B2 (fr)
CN (1) CN102265393A (fr)
AU (1) AU2009331707A1 (fr)
DE (1) DE102008055134A1 (fr)
WO (1) WO2010072555A1 (fr)

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JP5602763B2 (ja) 2014-10-08
WO2010072555A1 (fr) 2010-07-01
US20110304985A1 (en) 2011-12-15
CN102265393A (zh) 2011-11-30
DE102008055134A1 (de) 2010-07-01
JP2012513682A (ja) 2012-06-14
AU2009331707A1 (en) 2010-07-01

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