Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/30604—Chemical etching
  • H01L21/30608—Anisotropic liquid etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0236—Special surface textures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0236—Special surface textures
  • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the invention relates to a method for producing a silicon surface with pyramidal texture according to the preamble of claim 1.
• Another possibility is to carry out the further etching step using oxidizing acids. Even such a further etching step causes additional effort. Apart from that, too, different qualities of the sawn silicon wafers can not be sufficiently compensated for. Another disadvantage is that in this case, highly concentrated oxidizing acids must be used, the handling of which is dangerous.
• the object of the present invention is to eliminate the disadvantages of the prior art.
• a method for producing a silicon surface with a pyramidal texture is to be specified, which is as simple and inexpensive to carry out.
• silicon surfaces having a predetermined pyramidal texture can thus be produced without a change in the composition and / or concentration of the etching solution.
• the silicon surface in a process for producing a silicon surface having a pyramidal texture, is treated with ozone before contacting with the etching solution.
• Silicon surfaces treated in this way exhibit a particularly homogeneous pyramidal texture even with a different quality after a subsequent treatment with an etching solution. Ie. the pyramids thus produced on the silicon surface have a relatively narrow size distribution.
• the proposed method can be carried out easily and inexpensively.
• the term "quality" is understood in particular to mean a chemical surface quality of the silicon wafers.
• the different chemical surface properties of silicon wafers result from the use of different liquids used in sawing. As liquids can z. As oil or glycol can be used. Depending on the type of liquid used, the sawn silicon wafers are subsequently cleaned differently.
• the silicon surface may therefore differ in its quality in particular in that it is hydrophobic or hydrophilic, or that residues of a preceding cleaning step adhere thereto.
• the silicon surface is treated in the gas phase with ozone.
• ozone concentration in the gas phase is greater than 20 g / m 3 .
• the gas phase may expediently have an air humidity of 60 to 95%, preferably 75 to 85%.
• the silicon surface with an ozone-containing gas phase, or an ozone-containing liquid is acted upon, it has proved advantageous to use the treatment at a temperature ranging from 15 ° C to 60 0 C, preferably 20 0 C to 40 0 C. perform.
• the treatment is conveniently carried out for a period of 15 seconds to 60 minutes, preferably 3 to 40 minutes. In general, it has been shown that a treatment time in the range of 3 to 10 minutes already leads to very good results.
• the treatment with ozone according to the invention takes place after the production of the silicon wafer by means of sawing.
• the silicon wafers are cut in a conventional manner parallel to the ⁇ 100> surface.
• the silicon wafers produced by means of sawing can be wet-cleaned before the treatment according to the invention with ozone. This step serves to remove any scraper residues adhering to the silicon surface.
• the treatment with ozone takes place in this case after wet cleaning.
• the ozone-treated silicon wafers can subsequently be dried and packaged. Ie. they form an intermediate product ready for sale, which is subsequently treated with the etching solution at the customer according to its specific requirements for the production of the pyramidal texture.
• the treatment step according to the invention with ozone is carried out starting from supplied silicon wafers in a continuous, quasi-continuous or in a batch process together with the etching step.
• a tank for receiving the etching solution upstream of another basin for receiving ozone-added deionized water can be provided in an etching and cleaning line.
• a z. B. be provided with a lid closable container in which the silicon wafer are brought into contact with an ozone-containing gas phase.
• the etching solution may contain KOH or NaOH as an ingredient.
• one or more alcohols preferably isopropanol, may be added to the etching solution.
• the temperature of the etching solution is suitably in the range 70 0 C to 90 0 C.
• the etching time depending on the desired size of the to be produced on the silicon surface pyramids in the range between 5 minutes and 20 minutes. Exemplary embodiments are explained in more detail below:
• a carrier containing 100 silicon wafers is placed in a container.
• the container is closed with a lid.
• a humidity in the container is adjusted by introducing steam into a value in the range of 85 to 95% relative humidity.
• the water vapor can also be generated in the container.
• an ozone concentration of 20 to 40 g / m 3 is set in the container by supplying ozone.
• the SiIi zium wafers are applied for about 15 minutes with the aforementioned gas phase.
• the interior of the container is purged with nitrogen or oxygen.
• the lid is opened and the silicon wafers accommodated in the carrier are subsequently immersed in an etching solution to produce the pyramidal texture without further intermediate steps.
• a carrier containing 100 silicon wafers is submerged in a tank filled with deionized water.
• the deionized water is added ozone in a concentration of about 10 ppm.
• the water temperature is 25 ° C to 30 0 C.

Landscapes

• Engineering & Computer Science (AREA)
• General Physics & Mathematics (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• General Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Chemical & Material Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Electromagnetism (AREA)
• Weting (AREA)

Applications Claiming Priority (2)

Publications (1)

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• 2008
  • 2008-03-14 DE DE102008014166A patent/DE102008014166B3/de active Active
• 2009
  • 2009-03-02 TW TW098106694A patent/TWI430354B/zh active
  • 2009-03-12 MY MYPI20103983 patent/MY151555A/en unknown
  • 2009-03-12 EP EP09718901A patent/EP2255390A1/de not_active Withdrawn
  • 2009-03-12 WO PCT/EP2009/001784 patent/WO2009112261A1/de active Application Filing
  • 2009-03-12 CN CN2009801077915A patent/CN101965642B/zh active Active
  • 2009-03-12 KR KR1020107022272A patent/KR101153200B1/ko active IP Right Grant
  • 2009-03-12 US US12/736,026 patent/US20110045673A1/en not_active Abandoned

Non-Patent Citations (1)

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