EP2130241A2 - Substrat porteur d'une electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications - Google Patents

Substrat porteur d'une electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications

Info

Publication number
EP2130241A2
EP2130241A2 EP08762154A EP08762154A EP2130241A2 EP 2130241 A2 EP2130241 A2 EP 2130241A2 EP 08762154 A EP08762154 A EP 08762154A EP 08762154 A EP08762154 A EP 08762154A EP 2130241 A2 EP2130241 A2 EP 2130241A2
Authority
EP
European Patent Office
Prior art keywords
layer
electrode
oxide
organic electroluminescent
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08762154A
Other languages
German (de)
English (en)
French (fr)
Inventor
Svetoslav Tchakarov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Publication of EP2130241A2 publication Critical patent/EP2130241A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/84—Parallel electrical configurations of multiple OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/86—Series electrical configurations of multiple OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to a carrier substrate of a discontinuous electrode for organic electroluminescent device, the organic electroluminescent device incorporating it and their fabrications.
  • the subject of the present invention is a substrate for an organic electroluminescent device carrying, on a main surface, a discontinuous electrode comprising successively, from the substrate: a doped or non-doped metal oxide-based contact layer, single or mixed a metallic functional layer with intrinsic property of electrical conductivity, based on silver, having a functional layer thickness of less than 100 nm, an overlayer for the adaptation of the work function, in particular based on a metal oxide, doped or not, simple or mixed, the electrode having a square resistance of less than or equal to 5 ⁇ / square, or even less than or equal to 4 ⁇ / square, for a functional layer thickness of less than 100 nm, preferably less than or equal to 50 nm.
  • the electroconductive properties of the electrode according to the invention are made possible by the choice of a multilayer multilayer with a silver-based functional layer, which is also less expensive than an ITO functional layer because of the nature of the material used. electrode and manufacturing feasible at room temperature, for example, by spraying or evaporation.
  • each electrode zone provides a high fill factor without the need for photolithography to create the electrode areas. Since the electrode is organized in one or more rows, a defective electrode area does not interfere with the operation of the other electrode areas.
  • the thickness (total) of ITO, or even (mainly) oxide based on indium in the electrode may be less than or equal to 40 nm, or even 30 nm.
  • the total thickness of the electrode may be less than or equal to 250 ⁇ m; even more preferably at 150 nm to promote the extraction of light.
  • the electrode according to the invention may be over a large surface, for example an area greater than or equal to 0.02 m 2 or even 0.5 m 2 or 1 m 2 .
  • the insulating material preferably organic, in particular polymeric material, is chosen from screen-printed insulating material, in particular an acrylic or polyamide resin, insulating material deposited by ink jet, for example the ink described in patent US 6 986 982, or still deposited by roll coating.
  • the electrode comprises a plurality of rows parallel to each other, the rows of electrode zones being spaced apart by a so-called interangular distance less than or equal to 0.5 mm, preferably between 100 ⁇ m and 250 ⁇ m.
  • the electrode areas may be of substantially identical shape and / or size.
  • the electrode areas may be of substantially distinct shape and / or size.
  • the dimension of the electrode zone may be any, for example at least 3 cm, 5 cm or even about ten cm (10 cm and beyond).
  • the electrode according to the invention can present:
  • the overlay may be a monolayer or a multilayer. This layer is preferably of thickness (total) between 3 and 50 nm even more preferably between 5 and 20 nm.
  • the substrate may be preferably planar.
  • the substrate may be transparent (especially for emission through the susbtrate).
  • the substrate may be rigid, flexible or semi-flexible.
  • This substrate may be large, for example, top surface to 0.02 m 2, or even 0.5 m 2 or 1 m 2 and with an electrode substantially occupying the surface (the structuring zones).
  • the substrate is preferably glass, in particular of silicosodocalcic glass.
  • the substrate may advantageously be a glass having an absorption coefficient of less than 2.5 m 1 , preferably less than 0.7 m 1 at the wavelength of the OLED radiation (s).
  • the primer is preferably strong, easy and fast to deposit according to different techniques. It can be deposited, for example by a pyrolysis technique, especially in the gas phase (a technique often referred to by the abbreviation of CVD, for "Chemical Vapor Deposition”). This technique is interesting for the invention because appropriate settings of the deposition parameters make it possible to obtain a very dense layer for a reinforced barrier.
  • the primer may be optionally doped with aluminum to make its vacuum deposit more stable.
  • the bottom layer (monolayer or multilayer, optionally doped) may be between 10 and 150 nm thick, more preferably between 20 and 100 nm.
  • the bottom layer may preferably be:
  • It can be based on silicon oxycarbide and with tin to enhance the properties of anti acid etching in the case of a chemical screen printing.
  • Silicon nitride is very fast to deposit and forms an excellent barrier to alkalis, as already indicated.
  • it thanks to its high optical index relative to the carrier substrate, it allows to adapt the optical properties of the electrode by preferably playing on the thickness of the base layer / etch stop.
  • this layer dedicated to the protection allows a greater freedom in the choice of the overlayer only chosen to have optimal surface properties including surface work adaptation for OLEDs.
  • Blocking coating arranged (s) directly under, on or on each side of each functional metal layer including a base silver, the coating underlying the functional layer, towards the substrate, as a bonding, nucleation and / or protective coating, and the coating overlying the functional layer as a protective coating or "Sacrificial" in order to avoid the alteration of the functional metallic layer by etching and / or migration of oxygen of a layer which overcomes it, or even by oxygen migration if the layer which surmounts it is deposited by cathodic sputtering in the presence of oxygen.
  • blocking coating arranged (s) directly under, on or on each side of each functional metal layer including a base silver, the coating underlying the functional layer, towards the substrate, as a bonding, nucleation and / or protective coating, and the coating overlying the functional layer as a protective coating or "Sacrificial" in order to avoid the alteration of the functional metallic layer by etching and / or migration of oxygen of a layer which overcomes it, or even by
  • the functional metal layer can thus be disposed directly on at least one underlying blocking coating and / or directly under at least one overlying blocking coating, each coating having a thickness of preferably between 0.5 and 5 nm.
  • a layer or coating deposit (comprising one or more layers) is carried out directly under or directly on another deposit, it is that there can be no interposition of 'no layer between these two deposits.
  • Such a thin metal blocking layer also makes it possible to obtain excellent mechanical strength (resistance to abrasion, especially to scratches).
  • metal blocking layer it is necessary to limit the thickness of the metal layer and thus the light absorption to maintain a sufficient light transmission for the transparent electrodes.
  • the substoichiometric metal nitride it is also possible to choose a silicon nitride SiN x or aluminum AlNx or chromium Cr N x layer, or TiN x titanium or nitride of several metals such as NiCrN x .
  • the thin blocking layer may have an oxidation gradient, for example M (N) OH with variable X 1 , the part of the blocking layer in contact with the functional layer is less oxidized than the part of this layer furthest away of the functional layer using a particular deposition atmosphere.
  • the blocking coating may also be multilayer and in particular comprise: on the one hand an "interface" layer immediately in contact with said functional layer, this interface layer being made of a material based on oxide, nitride or non-stoichiometric metal oxynitride, such as those mentioned above, on the other hand, at least one layer of a metallic material, such as those mentioned above, layer immediately in contact with said "interface" layer.
  • a discontinuous upper electrode with an electroconductive layer in the form of electrode zones arranged on the electroluminescent layer areas.
  • the device can be organized into a plurality of substantially parallel electroluminescent rows spaced apart by less than 0.5 mm, each row being capable of being connected in series.
  • the distance between the electroluminescent zones of distinct rows may be greater than the distance between the zones of the same row, preferably from 100 ⁇ m, in particular between 100 ⁇ m and 250 ⁇ m.
  • the organic electroluminescent device according to the invention can be supplied with or without the current leads.
  • the lamination interlayer may make it possible to prevent bending of the bonnet, particularly for devices of large dimensions, for example with an area greater than 0.5 m 2 .
  • the OLED system can be preferably placed inside the double glazing, with a particularly inert gas blade (argon for example).
  • argon for example
  • - intended for urban or professional furniture such as a bus shelter panel, a wall of a display, a jewelery display or of a window, a wall of a greenhouse, an illuminating slab, - intended for interior furnishing, a shelf or furniture element, a facade of a piece of furniture, an illuminating slab, a ceiling lamp, an illuminating tablet refrigerator, an aquarium wall, - for the backlighting of electronic equipment, including display screen or display, possibly dual screen, such as a television or computer screen, a touch screen.
  • display screen or display possibly dual screen, such as a television or computer screen, a touch screen.
  • the small screen being preferably associated with a Fresnel lens to focus the light.
  • the electron transport layer may be composed of tris- (8-hydroxyquinoline) aluminum (Alq ⁇ ) or bathophenanthroline (BPhen).
  • the upper electrode may be an Mg / Al or LiF / Al layer. Examples of organic electroluminescent stacks are for example described in US6645645.
  • PEDOT poly(styrenesulphonate)
  • phenyl poly (p-phenylenevinylenene) PH-PPV 50 nm.
  • the etching step without photolithography may comprise (consist of):
  • a step of forming the electroluminescent zones by deposition of the electroluminescent material (s) on a mask in the form of an organized network of lines, for example metallic, in particular aluminum or ferroelectric (chromium, nickel, etc.), following first and second directions crossed, the lines in the second direction being thicker.
  • lines for example metallic, in particular aluminum or ferroelectric (chromium, nickel, etc.)
  • the distance of 2 (along Y) between zones of adjacent electroluminescent layers of distinct rows is less than or equal to L'1, for example between 100 ⁇ m and 250 ⁇ m.
  • a first current feed band 61 is formed, preferably having a thickness of between 0.5 and 10 ⁇ m, for example 5 ⁇ m, with a width of X of 5 cm and under form for example of a metal layer in one of the metals following: Mo, Al, Cr, Nd or alloy such as MoCr, AlNd or multilayer such as MoCr / Al / MoCr,
  • the layers based on SnZn: SbO x are deposited by reactive sputtering using a target of zinc and antimony-doped tin containing by weight 65% Sn, 34% Zn and 1% Sb. at a pressure of 0.2 Pa and in an argon / oxygen atmosphere.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
EP08762154A 2007-02-23 2008-02-25 Substrat porteur d'une electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications Withdrawn EP2130241A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0753453A FR2913146B1 (fr) 2007-02-23 2007-02-23 Electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications
PCT/FR2008/050313 WO2008119899A2 (fr) 2007-02-23 2008-02-25 Substrat porteur d'une electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications

Publications (1)

Publication Number Publication Date
EP2130241A2 true EP2130241A2 (fr) 2009-12-09

Family

ID=38544274

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08762154A Withdrawn EP2130241A2 (fr) 2007-02-23 2008-02-25 Substrat porteur d'une electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications

Country Status (8)

Country Link
US (1) US20100117523A1 (zh)
EP (1) EP2130241A2 (zh)
JP (1) JP5723529B2 (zh)
KR (1) KR20090125095A (zh)
CN (1) CN101617418B (zh)
FR (1) FR2913146B1 (zh)
TW (1) TW200904246A (zh)
WO (1) WO2008119899A2 (zh)

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JP2010519699A (ja) 2010-06-03
JP5723529B2 (ja) 2015-05-27
WO2008119899A3 (fr) 2009-03-26
TW200904246A (en) 2009-01-16
US20100117523A1 (en) 2010-05-13
KR20090125095A (ko) 2009-12-03
FR2913146A1 (fr) 2008-08-29
WO2008119899A2 (fr) 2008-10-09
CN101617418B (zh) 2013-12-25
CN101617418A (zh) 2009-12-30
FR2913146B1 (fr) 2009-05-01

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