WO2012045949A1 - Procede de connexion(s) electrique(s) d'un dispositif a diode electroluminescente organique encapsule et un tel dispositif oled - Google Patents
Procede de connexion(s) electrique(s) d'un dispositif a diode electroluminescente organique encapsule et un tel dispositif oled Download PDFInfo
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- WO2012045949A1 WO2012045949A1 PCT/FR2011/052209 FR2011052209W WO2012045949A1 WO 2012045949 A1 WO2012045949 A1 WO 2012045949A1 FR 2011052209 W FR2011052209 W FR 2011052209W WO 2012045949 A1 WO2012045949 A1 WO 2012045949A1
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- Prior art keywords
- electrical connection
- lower electrode
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- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/88—Terminals, e.g. bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Definitions
- the invention relates to a method of electrical connection (s) of an encapsulated organic light-emitting diode device and on such a device.
- An organic light emitting diode (OLED) device conventionally comprises:
- OLEDs are electronic components that are very sensitive to oxygen and to liquid water and in vapor form. Also, the OLEDs are further provided with one or more encapsulation layers covering the organic electroluminescent system.
- the OLEDs are conventionally provided with conductive elements for electrical connection in order to supply the electrodes.
- the connector is taken on exposed parts of the electrodes, parts not covered by encapsulation.
- patent EP03077939 proposes an OLED lamp (see FIG.
- an organic electroluminescent system partially covering the lower electrode and thereby leaving a portion of the first electrode in a first substrate edge (for the lower electrical connection),
- a second electrode covering the organic electroluminescent system and extending in a second substrate edge opposite the first substrate edge (for the upper electrical connection), - a layer-based encapsulation, partially covering the upper electrode, and leaving partially exposed the first and second edges for electrical connections.
- the deposition of the encapsulation layers is carried out through a mask protecting the areas of connections provided, which makes the process more complicated and / or laborious (installation, removal ).
- the document WO2008 / 103558 proposes for its part an OLED device (in connection with FIG. 4c) with an encapsulation film surrounding the entire device and comprising connector holes ("via contact” in English), to the connector elements of the devices. electrodes ("leads” in English), the holes being filled with conductive adhesives, silver ink or solder ("solder" in English).
- the object of the invention is therefore to provide an organic light-emitting diode device encapsulated by a layer (s) and with a simpler and more reliable power supply, in particular an OLED device that is more compatible with industrial requirements (production efficiency, ease of production, etc.). .) even for large surfaces.
- the invention firstly proposes a method of electrical connection (s) of an encapsulated organic light-emitting diode device comprising in this order:
- a dielectric substrate especially a transparent substrate, in particular made of mineral glass or of plastic,
- a first electrode said lower electrode, possibly transparent, based on electroconductive layer (s),
- organic electroluminescent system based on organic electroluminescent layer (s), on the lower electrode,
- a second so-called upper electrode possibly transparent, for example based on electroconductive layer (s), on the organic electroluminescent system and overflowing (partially) on an adjacent electrically insulated area of the lower electrode (zone naked, possibly covered by said at least one electroconductive layer (s) of lower electrode separated by structuring of this electrode),
- the method further comprises, after the encapsulation of the device:
- soldering step with ultrasonic vibrations in other words, US soldering
- the solder material forming, by local deterioration, a solder pad (in particular a substantially vertical point, ) from the encapsulation surface to at least the surface of the lower electrode (preferably the main surface or even the surface of the wafer),
- solder material forming, by local deterioration, a solder pad
- the encapsulation surface (notably substantially vertical) from the encapsulation surface to at least the surface of the upper electrode (preferably the main surface or even the surface of the wafer).
- the method according to the invention allows a gain in labor and in a number of steps. critical for production efficiency, while improving the reliability over time of these OLED devices.
- the method according to the invention is also more tolerant of misalignment. Connectivity being performed a posteriori, this reduces the number of misalignment, including alignment with respect to the mask opening.
- the invention thus makes it possible firstly to reduce the leakage current to a large extent by limiting the risk of surface pollution by a mask-handling tool.
- the mask is also an often reusable device but requires a special cleaning procedure, which can be avoided with the method according to the invention.
- the present invention further allows the designer to achieve with the utmost freedom OLEDS devices whose connection areas may have shapes and arrangements on the electrodes that are a function of the lighting profile that is desired.
- the layer or layers of the electrode in play When soldering with US (or by abuse of the ultrasound welding language), the layer or layers of the electrode in play, of the order of a few nm to a few hundred nm, are generally also pierced (partially or entirely). The electrical - welding - electrode connection is then made laterally by the edges.
- the provision of ultrasound is essential for the attachment of the solder material on the dielectric substrate, in particular of the glass type.
- the method according to the invention may also make it possible to avoid the manufacture of internal current leads, that is to say under the encapsulation layer and adjacent to the electrodes, as proposed in document WO2008 / 103558 or else supplying current into a border zone without encapsulation.
- a known current supply for the OLEDS is in the form of a band on the electrode in play, serving to distribute the current in a uniform manner (in other words bus bar in English), in particular comprising:
- a metal layer for example PVD deposition of Ni, NiCr, Al, Cu, thick from 50 to 1000 nm, which involves additional metallization and "patterning",
- an electroconductive material in particular a foam, a possibly sticky material deposited by inkjet charged with
- This step of forming current feed (s) can be simplified.
- the current feed forming step for the lower electrode, underlying the encapsulation layer can be coupled (especially concomitantly) to the lower electrode forming step and include the deposition of ) material (x) for the lower electrode.
- One or more current leads are thus produced by the deposition of (s) material (s) for the lower electrode, in particular the gate electrode, for example described in document WO2010 / 034944, as follows:
- the electrode material in particular a metal layer (silver, aluminum ..) in the electrode area (forming a grid) and the current feeding area (forming a solid metal area),
- This grid electrode can also be smoothed by filling the space between the meshs of the grid and adding an electroconductive smoothing coating between and on the meshes (identical or not to the filling material), especially as described in FIG. WO2009 / 071821.
- connection method according to the invention can be any connection method according to the invention.
- the connection method according to the invention can be any connection method according to the invention.
- step (s) free of internal current supplying step (s), in particular of the strip type, for the lower electrode and / or for the upper electrode, that is to say free of fed current (s) underlying (s) to the encapsulation layer (not yet crossed by the solder), step (s) before said encapsulation,
- the solder for the lower electrical connection may be sufficiently wide to distribute the current (thus forming a current feed zone for the lower electrode, at the outer portion, and / or the solder for the electrical connection upper is sufficiently wide to distribute the current (thus forming a current supply zone for the upper electrode, partly external).
- the brazing zone with US may be formed of one or more brazing points, in particular along the same electrode edge, or continuously, in band for example.
- the upper connection zone (which is a brazing zone with possible US) may be an adjacent or opposite edge to the lower connection zone (which is a brazing zone with US potential).
- solder material with US is a filler metal which is generally an alloy, most often (mainly) tin-based.
- the solder with US made can easily connect the electrode in play to an external connector element. Between the element of connection and the electrode in play, the electrical connection can be provided by a single contact. But besides the fact that the electrical contact is imperfect, this mode of contact may result in the use perforation of the electrode and therefore a degradation of the functionality of the glazing.
- the method according to the invention may comprise a connection of an external connection element for the lower electrode, in particular by heating the device encapsulated in the lower electrical connection zone after brazing or during ultrasonic brazing for the lower electrical connection zone and / or it may comprise a connection of an external connector element for the upper electrode, in particular by heating the device encapsulated in the upper electrical connection zone after soldering or during ultrasonic soldering for the zone superior electrical connection.
- the external electrical connection element is in particular chosen from at least one of the following electrical connection means:
- At least one electroconductive wire for example metal, for example copper, aluminum, steel, stainless steel, iron, tungsten gold, silver,
- At least one electroconductive strip optionally (self) adhesive, especially metallic foil type, for example thick between 50 pm and 100 pm.
- the external electrical connection means may be provided on the surface with solder material (tinned copper, etc.) to facilitate its attachment.
- the OLED device according to the invention can be:
- the upper electrode and the lower electrode are transparent.
- the lower connection solder does not does not cross the (s) material (s) of the upper electrode in the lower electrical connection area (and preferably does not cross internal reported element including current leads for example wire type).
- the deposition of layer (s) for the upper electrode can expose the first edge possibly coated with the (s) electroluminescent (s) organic (s), including masking of the first edge.
- the upper electrode is thus deposited by masking, in particular if it is a vacuum deposition, for example by evaporation, for which it is possible to use a magnetic mask (Ni, etc.) held by magnets on the screen. opposite side of the substrate, unlike magnetron sputtering deposits.
- Such deposits are easier if it is a reflective upper electrode, often thick, especially monolayer for example aluminum.
- the lower connection solder passes through the material (s) of the upper electrode into the lower electrical connection area.
- the deposition of layer (s) for the upper electrode covering said first edge (and the underlying organic layer (s)) may comprise, preferably before brazing with US in the lower electrical connection zone. and especially before encapsulation, selective local structuring, without (post) masking, in the region of the first edge, which divides said layer deposit (s) for the upper electrode into an electrically inactive zone and said upper electrode ( and optionally dividing the underlying organic layers), structuring optionally up to the lower electrode (not included or at least partially to retain the electroconductive function), and preferably the method comprises filling the structured area of the an insulating material.
- the lower electrode may be in particular reflective and the upper electrode transparent.
- the deposition of (s) layers (s) for the lower electrode in particular transparent, for example deposited by magnetron sputtering, can cover the zone intended to be the adjacent zone, of superior connection.
- the process may then comprise, prior to the deposition of the layer (s) of the upper electrode (and preferably with the deposition of the organic layers), a local structuring of said layer (s) of the lower electrode ( possibly organic layers) without post-masking:
- the method may comprise a filling of the thus structured area of an insulating material, (by screen printing in particular), in particular thicker and overflowing on an edge of the electrode.
- PU polyurethane
- EVA ethylene / vinyl acetate copolymer
- PVB polyvinyl butyral
- a copolymer of polyethylene and acrylate by example sold by the company Dupont under the name of Butacite or sold by the company Solutia under the name of Saflex.
- These plastics have, for example, a thickness between 0.2 mm and 1.1 mm, in particular 0.38 and 0.76 mm.
- the invention also relates to an organic electroluminescent device encapsulated with electrical connection (s), in particular as manufactured by the method already described, comprising in this order:
- a dielectric substrate in particular transparent
- organic electroluminescent system based on organic electroluminescent layer (s), on the lower electrode,
- a second so-called upper (possibly transparent) electrode based on electroconductive layer (s), on the organic electroluminescent system and overflowing (partially) on an adjacent isolated area of the lower electrode (bare, possibly covered by the or electroconductive layers of lower electrode separated by structuration),
- a dielectric (electrically insulating) encapsulation based on a layer (s) (transparent), thus covering (thus entirely on) the upper electrode, the organic electroluminescent system and the lower electrode, preferably also covering the lateral edges of the minus the organic electroluminescent system (and preferably the lower electrode and / or the upper electrode),
- a lower electrical connection zone formed of a brazing pad (soldered with US) in contact with the lower electrode (preferably from above or even by the wafer) and opening (substantially vertically) encapsulation
- an upper electrical connection zone formed of solder (soldered with US), opening (substantially vertically) from the encapsulation.
- This brazing pad is in contact with the upper electrode (preferably from above or even the wafer) or with the surface of electroconductive layer (s) adjacent electrically connected with the upper electrode in said zone.
- OLED device In addition, one or more of the following features may be provided for the OLED device:
- the upper electrode covers the first edge of the lower electrode and a zone of selective electrical insulation is between the lower electrical connection and the upper electrical connection, zone separating in two parts the upper electrode or the underlying organic layers. the underlying lower electrode being conserved (or sufficiently preserved),
- the zone of selective electrical insulation is a cutout in particular laser
- the upper electrode does not cover the first edge of the lower electrode
- the lower electrode is a stack of thin layers comprising at least one thin layer based on silver and the dielectric encapsulation also covers the edge of the lower electrode, to protect it,
- the substrate is in particular mineral glass
- the electrode comprises an external connection element for the lower electrode connected, in particular by brazing, to the solder pad and / or an external connector element for the upper electrode connected, in particular by brazing, to the brazing pad.
- the electrode can be obtained by a deposit or a succession of deposits made by a technique using vacuum such as cathodic sputtering possibly assisted by magnetic field.
- Electrodes For a (semi) transparent electrode, it is possible to use any type of transparent electroconductive layer, for example so-called “TCO” layers (for Transparent Conductive Oxide).
- TCO Transparent Conductive Oxide
- the electrodes may in particular be electroconductive layers chosen from metal oxides, especially the following materials:
- doped tin oxide in particular fluorine SnO 2 : F or antimony SnO 2 : Sb (the precursors that can be used in the case of chemical vapor deposition "CVD" may be organometallic or tin halides associated therewith with a hydrofluoric acid or trifluoroacetic acid fluorine precursor),
- doped zinc oxide in particular aluminum ZnO: Al (the precursors that can be used, in the case of CVD deposition, may be organometallic or zinc and aluminum halides) or gallium ZnO: Ga,
- tin ⁇ the precursors which can be used in the case of CVD deposition may be organometallic or halide of tin and indium), or the oxide of zinc-doped indium (IZO).
- TCC transparent conductive coating in English
- Ag Ag, Al, Pd, Cu, Pd, Pt, In, Mo, Au.
- the surfaces of the electrodes are not necessarily continuous.
- the encapsulation carried out makes it particularly possible to protect the silver layer (s) against environmental corrosion.
- the chosen transparent lower electrode may be a gate electrode, in particular described in WO2008 / 132397 with, as already seen, preferably a solid border for the current supply.
- connection zone generally along an edge of the substrate (and / or the active OLED zone) may be variable in particular be:
- the upper connection zone may be on an edge adjacent to or opposite the edge of the lower connection zone.
- the encapsulated OLED device according to the invention can then be provided with:
- the lower electrode which is discontinuous and thus forming at least one row of lower electrode zones, preferably all or all the electrode zones having a first dimension, in particular of at least 3 cm in the direction of said row, the electrode areas of the row being, for example, spaced apart by a so-called intraranged distance in particular less than or equal to 0.5 mm,
- the upper electrode which is discontinuous in the form of upper electrode zones arranged on the electroluminescent zones, the encapsulation covering the entire device.
- Each electrode zone may be a geometric pattern (square, rectangle, round, etc.), in particular solid or of grid type.
- the electrode areas may be of substantially identical shape and / or size within a row.
- the dimension of the lower electrode zone may be any, for example at least 3 cm, 5 cm or even about ten cm (10 cm and beyond).
- the lower electrode may form a single row of lower electrode areas, and in the direction perpendicular to that row, the upper electrode and the electroluminescent layer may be discontinuous to form a plurality of parallel rows.
- the etching of the lower electrode is then preferably (a line) perpendicular to the orientation of the rows of the upper electrodes. From one row to another, the patterns can be shifted, for example for a staggered arrangement.
- the electroluminescent regions are shifted from the lower electrode areas in the direction of that array and the upper electrode regions are shifted from the electroluminescent regions in the direction of that array.
- This type of connection guarantees a uniformity of lighting on large surfaces, a satisfactory filling factor, reliability, is inexpensive and easy to manufacture, especially on an industrial scale.
- the OLED device can also be organized in a plurality of substantially parallel electroluminescent rows spaced apart from one another preferably of less than 0.5 mm, each row being connectable in series.
- the electrode areas can be shaped and / or of substantially distinct size.
- These rows may preferably be electrically insulated from each other by an insulating resin, in particular screen-printed or ink-jet coated.
- the intraranged spaces and / or the spaces between rows can be preferably manufactured by laser, by chemical screen printing with an etching paste.
- the distance between the electroluminescent zones of distinct rows may be greater than the distance between the zones of the same row, preferably from 100 ⁇ m, in particular between 100 ⁇ m and 250 ⁇ m.
- Each row can thus be independent. If one of the zones in each row is defective, the entire row still works. And the adjacent rows are intact.
- the lower electrode may comprise a plurality of rows of lower electrode zones and the electroluminescent layer and the upper electrode reproduce these rows (offset in the row direction).
- the first solder with US being on the (lower) lower connection edge, called the "first" lower electrode zone of the row, typically the closest to a first edge of the substrate,
- the second solder with US being on the upper electrical connection zone which is the zone adjacent to the last lower electrode zone of the row, typically the closest to an edge of the substrate opposite to the first edge.
- the first solder with US extending on the edges of the "first" lower electrode zones of each row, typically areas that are closest to a first edge of the substrate,
- “Last" lower electrode areas of the rows typically areas closest to an edge of the substrate opposite the first edge.
- the substrate may preferably be flat.
- the substrate may be transparent (especially for emission through the susbtrate).
- This substrate may be large, for example, top surface to 0.02 m 2, or even 0.5 m 2 or 1 m 2 and with an electrode substantially occupying the surface (the structuring zones).
- the substrate may be rigid, flexible or semi-flexible.
- the substrate may be a plastic, for example a polycarbonate, a polyethylene terephthalate (PET), a polyethylene naphthalate (PEN), a polymethylmethacrylate (PMMA).
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PMMA polymethylmethacrylate
- the substrate is preferably glass, in particular of silicosodocalcic glass.
- organic electroluminescent layers are polymers, it is called PLED (Polymer Light Emitting Diodes in English). If the electroluminescent layers are small molecules, it is called SM-OLED (Small Mollecule Organic Light Emitting Diodes).
- PLED An example of PLED consists of a following stack:
- the upper electrode may be a layer of Ca.
- an SM-OLED consists of a stack of hole injection layers, a hole transport layer, an emissive layer, an electron transport layer.
- hole injection layer is copper phthalocyanine (CuPC)
- the hole-transporting layer may for example be ⁇ , ⁇ '-Bis (naphthalen-1-yl) -N, N'-bis ( phenyl) benzidine (alpha-NPB).
- the emitting layer may be, for example, by a layer of 4,4 ', 4'-tri (N-carbazolyl) triphenylamine (TCTA) doped with tris (2-phenylpyridine) iridium [Ir (ppy) 3 ].
- TCTA tris (2-phenylpyridine) iridium
- the electron transport layer can be composed of tris- (8-hydroxyquinoline) aluminum (Alq 3 ) or bathophenanthroline (BPhen).
- the upper electrode may be a Mg / Al or LiF / Al layer.
- organic electroluminescent stacks are for example described in US6645645.
- the OLED device according to the invention can also integrate any functionalization (s) known in the field of glazing.
- functionalizations mention may be made of: hydrophobic / oleophobic, hydrophilic / oleophilic layer, photocatalytic antifouling, thermal radiation reflective (solar control) or infra-red (low-emissive) stack, antireflection, reflecting layer for mirror effect.
- the OLED device according to the invention can form (alternative or cumulative choice) a lighting system, decorative, architectural, a signaling system, display - for example of the type drawing, logo, alphanumeric signaling arranged both outside and 'indoors -.
- the OLED device according to the invention may be intended for the building possibly mounted in double glazing, forming a particularly illuminating facade, a (door) window including illuminating.
- the OLED device according to the invention can be intended for a transport vehicle, such as a rear window, a side window or a car roof, a rearview mirror, a part of the windshield, a windshield or to any other land, water or air vehicle, including a porthole or cockpit.
- a transport vehicle such as a rear window, a side window or a car roof, a rearview mirror, a part of the windshield, a windshield or to any other land, water or air vehicle, including a porthole or cockpit.
- the OLED device according to the invention can be intended for street furniture such as a bus shelter wall, to be a display stand, a jewelery display, a showcase, a greenhouse.
- the OLED device according to the invention can be intended for interior furnishings, in particular be a shelf element, a mirror, a furniture illuminating facade, an aquarium wall, be a pavement, especially illuminating, for wall coverings or floor or ceiling.
- Figure 1 is a schematic longitudinal sectional view of an OLED device encapsulated with electrical connections in a first embodiment of the invention.
- FIG. 1A is a partial schematic view from above of the encapsulated OLED device of FIG.
- Figure lter is a partial schematic view from above in a variant of the encapsulated OLED device of Figure 1.
- Figure 2 is a schematic longitudinal sectional view of an encapsulated OLED device with electrical connections in a second embodiment of the invention.
- Figure 3 is a schematic longitudinal sectional view of an encapsulated OLED device with electrical connections in a third embodiment of the invention.
- FIG. 4 is a partial schematic view from above of the encapsulated OLED device of FIG. 3.
- FIG. 5 is a partial schematic view from above in a variant of the encapsulated OLED device of FIG.
- FIG. 6 is a partial schematic view from above in another variant of the encapsulated OLED device of FIG.
- Figure 1 is a schematic longitudinal sectional view of an encapsulated OLED device with electrical connections 100 in a first embodiment of the invention.
- the encapsulated OLED device 100 is emitted by the substrate and comprises:
- a dielectric transparent substrate 1 for example a glass sheet, for example rectangular with longitudinal and lateral edges,
- a first electrode said transparent lower electrode 2, based on electroconductive layer (s), for example square, and preferably offset from the edges of the substrate 1 (to limit corrosion, in particular in the case of an electrode with 'money),
- an organic electroluminescent system 3 based on organic electroluminescent layer (s), partially on (or alternatively covering) the lower electrode 2, leaving exposed a first edge 21 of the electrode 2, here first so-called lateral edge, because along the first lateral edge of the substrate,
- a second so-called upper reflective electrode 4 preferably in the form of an electroconductive layer, on the organic electroluminescent system 3 (for example covering its surface), on one side leaving exposed the lateral edge 21 of the electrode 2, and on the other side overflowing on an adjacent zone, here lateral 22 and electrically isolated from the lower electrode 2 and the upper electrode 4 partly covering a portion 22, in strip, which is in the material (s) of the lower electrode 2, strip offset from the second lateral edge of the substrate and separated from the lower electrode 2 by an electrical insulation line 7 of about 200 ⁇ m and filled with a passivation resin 71 also projecting over a surface edge lower electrode 2,
- the passivation resin 71 is for example an acrylic or polyamide resin, for example the Wepelan SD2154 E and SD 2954 resins.
- the encapsulation 5 also covers marginal areas 51, 52 of the bare glass, along the first and second side edges of the glass 1.
- the glass sheet 2 is about 0.7 to 10 mm thick, optionally extraclear, with a surface area of about m 2 . Its slice 21 is preferably smooth.
- the sheet 2 is optionally tempered thermally or chemically and / or curved.
- the lower electrode 2 is for example a stack of thin layers with silver or even a preferably planarized metal grid.
- the organic electroluminescent system 3 is for example formed:
- the organic electroluminescent system 3 can emit a polychromatic radiation, a white light.
- the reflective upper electrode 4 is metallic, in particular based on silver or aluminum.
- the OLED 100 device includes:
- brazing pad with US vibrations
- a lower connection 61 passing through the encapsulation 5, the lower electrode 2 in a zone of the exposed lateral edge 21,
- brazing pad (with US vibrations) of upper connection 62, passing through the encapsulation 5, the upper electrode 4 in the zone adjacent to the band 22.
- the solder pads 61 and 62 emerge from the encapsulation 5.
- the solder material is a tin-based alloy.
- solder pads 61 and 62 Two external connection elements 81 and 82 protruding from the lateral edges of the substrate are respectively soldered directly to the solder pads 61 and 62, without the need for US vibrations. These solderings are made by local heating of solder pads US 61, 62, for example with a laser or by induction. As shown in FIG. 1a, the solder pad 61 can extend along the lateral edge, in the form of a strip for a better current distribution (forming a bus-bar current supply) and the connection element.
- external 81 may be a tin-plated copper foil.
- the other solder pad (not shown) extends along the opposite side edge in the form of a strip for a better current distribution (forming a bus-bar current supply) and the external connection element can also be a tin-plated copper foil.
- the solder pad 61 can extend along the lateral edge, in the form of local solders regularly distributed, for a better distribution of the current and the external connector element 81 can be a series of wires in tinned copper fixed on these local solders.
- the other brazing pad (not shown) can extend along the opposite lateral edge, in the form of local solders regularly distributed, for a better distribution of the current and the external connector element may be a series of copper wires tinned attached to these local solders.
- the OLED100 device is made as follows:
- the lower electrode material (s) is deposited in a thin layer (s), for example by evaporation or magnetron sputtering, for example forming a silver stack or a grid metal (aluminum ..) planarized with possibly its bus-bar type current supply formed at the same time,
- the lower-layer lower electrode material (s) is preferably structured by selective acid etching using a serigraphed etching paste or by laser cutting; forming two electrically insulated areas: the lower electrode zone 2, and the adjacent lateral zone 22 for the electrical connection of the upper electrode 4 and passively the edges of the lower electrode 2 at least on the side adjacent side zone 22.
- Laser cutting has visible characteristic beads.
- the electroluminescent organic layers (defining the illuminating zone) are deposited on the lower electrode 2 (leaving the exposed edge zone 21, for example, at the opposite of the passivation zone 7, for the zone of lower connections) and is deposited, for example by evaporation, the thin layer or layers for the upper electrode 4 on the organic layers, the passivation layer and (at least ) partly on the sideband 22.
- the encapsulation layer or layers 5 covering the assembly formed of the upper electrode 4, the connection zone of the lower electrode 21, and the adjacent lateral zone 22 (if it exceeds of the upper electrode).
- the brazing is carried out by ultrasonic vibrations to form the connection zone of the lower electrode and the connection zone of the upper electrode.
- the brazing of the foil 71 is carried out on the solder pad 61 and brazing of the foil 72 is carried out on the solder pad 62.
- Figure 2 is a schematic longitudinal sectional view of an electrically-encapsulated electrically-conductive device 200 with electrical connections in a second embodiment according to the invention.
- the encapsulated electroluminescent device 200 differs first from the first device 100 in that it further comprises a lamination interlayer 9 (EVA, PVB, PU or silicone ...) or cast resin and a glass substrate against which makes it possible to add additional protection to the encapsulation 5.
- a lamination interlayer 9 EVA, PVB, PU or silicone .
- the lamination interlayer 9 is for example carrying external connector elements 71, 72.
- the encapsulated electroluminescent device 200 then differs from the first device 100 in that the organic electroluminescent system 3 extends in the zone of the lateral edge, zone of lower connector 21. Also, the solder pad US 61 also passes through this system 3 in this zone 21.
- the encapsulated electroluminescent device 200 finally differs from the first device 100 in that the upper electrode 4 extends further and covers all the lower electrode materials in the adjacent zone 22, upper connection zone. Also, the US 62 solder pad goes through the upper electrode 4 in this zone 22.
- FIG. 3 is a diagrammatic view in longitudinal section of an electrically-encapsulated electroluminescent device with electrical connections 300 in a second embodiment according to the invention.
- the encapsulated electroluminescent device 300 differs from the first device 100 especially in that the organic electroluminescent system 3 and the upper electrode 4 '(substantially) cover the lower electrode 4 in the zone of the lateral edge 21, zone of lower connection 21. , the lower connection solder pad US 61 'also passes through these layers.
- the device 300 comprises an electrically insulating zone 70 which is more central than this solder pad 61 ', a zone separating at least the upper electrode 4 and preferably the organic electroluminescent system 3 also, in two zones. .
- This zone of selective electrical insulation is preferably produced by laser cutting, and preferably before encapsulation 5. In a variant, this selective insulation zone is made by laser cutting after encapsulation and is laminated.
- the lower electrode 2 is itself intact or sufficiently preserved from this structuring to drive electrically in this region.
- This electrically insulating zone 70 may be filled with a passivation resin, for example identical to resin 71, or even filled by encapsulation. This electrically insulating zone 70 is covered in any case by the encapsulation 5.
- solder pads 61 ', 62' and the insulating zones 70 and 7 are side strips, for example parallel strips.
- the encapsulated electroluminescent device 300 may optionally differ from the first device 100 in that it is also (or only) forward-emitting (via the upper electrode 4, the encapsulation layer 5).
- the upper electrode 4 ', the encapsulation 5 are transparent and the lower electrode is reflective (or even semi-reflective).
- FIG. 5 is a partial schematic view from above in a variant of the encapsulated OLED device of FIG.
- the brazing pads 61 ', 62' are each on a lateral and longitudinal edge, in the shape of a square.
- the isolation zones 70 and 7 are modified accordingly.
- FIG. 6 is a partial schematic view from above in another variant of the encapsulated OLED device of FIG.
- Devices 100 to 300 may be for a transport vehicle, such as a rear window, an illuminating side window or an illuminating car roof, a mirror mirror, a windshield portion, or any other land, water or air vehicle including a porthole or a cockpit.
- a transport vehicle such as a rear window, an illuminating side window or an illuminating car roof, a mirror mirror, a windshield portion, or any other land, water or air vehicle including a porthole or a cockpit.
- Electroluminescent devices 100 to 300 may be intended for street furniture, such as a bus shelter, a display rack, a jewelery display, a showcase, a shelf element, an aquarium wall, a greenhouse.
- the electroluminescent devices 100 to 300 may be intended for interior furnishings, a furniture facade, an illuminating paver, in particular in glass, for wall or floor coverings, an illuminated ceiling slab, for the credence of the kitchen or for the bathroom.
- Electroluminescent devices 100 to 300 can be used for decorative, architectural, signaling and display lighting.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/876,297 US20130207094A1 (en) | 2010-09-27 | 2011-09-23 | Method for providing electrical connection(s) in an encapsulated organic light-emitting diode device, and such an oled device |
KR1020137010709A KR20130119429A (ko) | 2010-09-27 | 2011-09-23 | 봉지된 유기 발광 다이오드 소자에 전기 접속부(들)를 제공하는 방법 및 상기 oled 소자 |
EP11773752.8A EP2622667A1 (fr) | 2010-09-27 | 2011-09-23 | Procede de connexion(s) electrique(s) d'un dispositif a diode electroluminescente organique encapsule et un tel dispositif oled |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1057746 | 2010-09-27 | ||
FR1057746A FR2965407A1 (fr) | 2010-09-27 | 2010-09-27 | Procédé de connexion(s) électrique(s) d'un dispositif a diode électroluminescente organique encapsule et un tel dispositif oled |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012045949A1 true WO2012045949A1 (fr) | 2012-04-12 |
Family
ID=43920274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/FR2011/052209 WO2012045949A1 (fr) | 2010-09-27 | 2011-09-23 | Procede de connexion(s) electrique(s) d'un dispositif a diode electroluminescente organique encapsule et un tel dispositif oled |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130207094A1 (fr) |
EP (1) | EP2622667A1 (fr) |
KR (1) | KR20130119429A (fr) |
FR (1) | FR2965407A1 (fr) |
WO (1) | WO2012045949A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113183566A (zh) * | 2021-04-25 | 2021-07-30 | 合肥达视光电科技有限公司 | 一种具有贴膜线路的光电玻璃及生产工艺 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2513998B1 (fr) * | 2009-12-18 | 2017-07-05 | Novaled GmbH | Dispositif électroluminescent de grande surface comprenant des diodes électroluminescentes organiques |
CN103453456B (zh) * | 2012-06-01 | 2018-01-23 | 海洋王照明科技股份有限公司 | 拉式隔振组件、隔振阵列及吊装式灯具 |
DE102012215113B4 (de) * | 2012-08-24 | 2022-02-03 | Pictiva Displays International Limited | Organische Leuchtdiode und Verfahren zum Betreiben einer organischen Leuchtdiode |
JP2014103008A (ja) | 2012-11-20 | 2014-06-05 | Toshiba Corp | 液体用容器、容器用照明装置、容器用部材及び容器照明システム |
US9395072B2 (en) | 2013-11-13 | 2016-07-19 | Industrial Technology Research Institute | Illumination device |
DE102014111037B4 (de) * | 2014-08-04 | 2017-06-01 | Osram Oled Gmbh | Verfahren zur Herstellung einer organischen Leuchtdiode und organische Leuchtdiode |
DE102015103796A1 (de) * | 2015-03-16 | 2016-09-22 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
FR3066324B1 (fr) * | 2017-05-11 | 2021-09-10 | Isorg | Dispositif electronique a tenue au vieillissement amelioree |
KR102406966B1 (ko) * | 2017-11-28 | 2022-06-08 | 엘지디스플레이 주식회사 | Oled 조명 장치 |
FR3122482B1 (fr) * | 2021-04-29 | 2023-06-30 | Was Light | Module électroluminescent pour signalisation routière horizontale |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020078559A1 (en) * | 2000-12-27 | 2002-06-27 | International Business Machines Corporation | Display fabrication using modular active devices |
US6645645B1 (en) | 2000-05-30 | 2003-11-11 | The Trustees Of Princeton University | Phosphorescent organic light emitting devices |
US20040149986A1 (en) * | 2002-04-16 | 2004-08-05 | Dubowski Jan J. | Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures |
EP1536491A2 (fr) * | 2003-11-25 | 2005-06-01 | Kabushiki Kaisha Toyota Jidoshokki | Dispositif électroluminescent organique, méthode de fabrication et dispositif d'éclairage |
US20080029147A1 (en) * | 2004-10-25 | 2008-02-07 | The Regents Of The University Of California | Stacked Layer Electrode For Organic Electronic Devices |
WO2008059185A2 (fr) | 2006-11-17 | 2008-05-22 | Saint-Gobain Glass France | Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant |
US20080196664A1 (en) * | 2007-02-21 | 2008-08-21 | 3M Innovative Properties Company | Moisture barrier coatings for organic light emitting diode devices |
WO2008119899A2 (fr) | 2007-02-23 | 2008-10-09 | Saint-Gobain Glass France | Substrat porteur d'une electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications |
WO2008132397A2 (fr) | 2007-03-21 | 2008-11-06 | Saint-Gobain Glass France | Procede de fabrication d'un masque a ouvertures submillimetriques pour la realisation d'une grille submillimetrique, grille submillimetrique |
WO2009071821A2 (fr) | 2007-11-22 | 2009-06-11 | Saint-Gobain Glass France | Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication |
WO2009083693A2 (fr) | 2007-12-27 | 2009-07-09 | Saint-Gobain Glass France | Substrat pour dispositif electroluminescent organique, ainsi que dispositif electroluminescent organique l'incorporant |
US20090178706A1 (en) * | 2005-01-20 | 2009-07-16 | Sheats James R | Optoelectronic architecture having compound conducting substrate |
WO2010034944A1 (fr) | 2008-09-24 | 2010-04-01 | Saint-Gobain Glass France | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouvertures submillimetriques, grille electroconductrice submillimetrique |
US20100109513A1 (en) * | 2007-01-22 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Light emitting device |
-
2010
- 2010-09-27 FR FR1057746A patent/FR2965407A1/fr not_active Withdrawn
-
2011
- 2011-09-23 US US13/876,297 patent/US20130207094A1/en not_active Abandoned
- 2011-09-23 WO PCT/FR2011/052209 patent/WO2012045949A1/fr active Application Filing
- 2011-09-23 EP EP11773752.8A patent/EP2622667A1/fr not_active Withdrawn
- 2011-09-23 KR KR1020137010709A patent/KR20130119429A/ko not_active Application Discontinuation
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6645645B1 (en) | 2000-05-30 | 2003-11-11 | The Trustees Of Princeton University | Phosphorescent organic light emitting devices |
US20020078559A1 (en) * | 2000-12-27 | 2002-06-27 | International Business Machines Corporation | Display fabrication using modular active devices |
US20040149986A1 (en) * | 2002-04-16 | 2004-08-05 | Dubowski Jan J. | Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures |
EP1536491A2 (fr) * | 2003-11-25 | 2005-06-01 | Kabushiki Kaisha Toyota Jidoshokki | Dispositif électroluminescent organique, méthode de fabrication et dispositif d'éclairage |
US20080029147A1 (en) * | 2004-10-25 | 2008-02-07 | The Regents Of The University Of California | Stacked Layer Electrode For Organic Electronic Devices |
US20090178706A1 (en) * | 2005-01-20 | 2009-07-16 | Sheats James R | Optoelectronic architecture having compound conducting substrate |
WO2008059185A2 (fr) | 2006-11-17 | 2008-05-22 | Saint-Gobain Glass France | Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant |
US20100109513A1 (en) * | 2007-01-22 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Light emitting device |
US20080196664A1 (en) * | 2007-02-21 | 2008-08-21 | 3M Innovative Properties Company | Moisture barrier coatings for organic light emitting diode devices |
WO2008103558A1 (fr) | 2007-02-21 | 2008-08-28 | 3M Innovative Properties Company | Revêtements formant une barrière contre l'humidité pour des dispositifs à diodes électroluminescentes organiques |
WO2008119899A2 (fr) | 2007-02-23 | 2008-10-09 | Saint-Gobain Glass France | Substrat porteur d'une electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications |
WO2008132397A2 (fr) | 2007-03-21 | 2008-11-06 | Saint-Gobain Glass France | Procede de fabrication d'un masque a ouvertures submillimetriques pour la realisation d'une grille submillimetrique, grille submillimetrique |
WO2009071821A2 (fr) | 2007-11-22 | 2009-06-11 | Saint-Gobain Glass France | Substrat porteur d'une electrode, dispositif electroluminescent organique l'incorporant, et sa fabrication |
WO2009083693A2 (fr) | 2007-12-27 | 2009-07-09 | Saint-Gobain Glass France | Substrat pour dispositif electroluminescent organique, ainsi que dispositif electroluminescent organique l'incorporant |
WO2010034944A1 (fr) | 2008-09-24 | 2010-04-01 | Saint-Gobain Glass France | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouvertures submillimetriques, grille electroconductrice submillimetrique |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113183566A (zh) * | 2021-04-25 | 2021-07-30 | 合肥达视光电科技有限公司 | 一种具有贴膜线路的光电玻璃及生产工艺 |
Also Published As
Publication number | Publication date |
---|---|
FR2965407A1 (fr) | 2012-03-30 |
EP2622667A1 (fr) | 2013-08-07 |
KR20130119429A (ko) | 2013-10-31 |
US20130207094A1 (en) | 2013-08-15 |
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