EP2070088A4 - Mémoires résistives non volatiles, circuits à verrouillage et circuits de fonctionnement comprenant des commutateurs à nanotubes à deux bornes extensibles - Google Patents

Mémoires résistives non volatiles, circuits à verrouillage et circuits de fonctionnement comprenant des commutateurs à nanotubes à deux bornes extensibles

Info

Publication number
EP2070088A4
EP2070088A4 EP07840800A EP07840800A EP2070088A4 EP 2070088 A4 EP2070088 A4 EP 2070088A4 EP 07840800 A EP07840800 A EP 07840800A EP 07840800 A EP07840800 A EP 07840800A EP 2070088 A4 EP2070088 A4 EP 2070088A4
Authority
EP
European Patent Office
Prior art keywords
circuits
scalable
resistive memories
nanotube switches
nonvolatile resistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07840800A
Other languages
German (de)
English (en)
Other versions
EP2070088A2 (fr
Inventor
Claude L Bertin
Thomas Rueckes
Jonathan W Ward
Frank Guo
Steven L Konsek
Mitchell Meinhold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantero Inc
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Priority to EP09159271A priority Critical patent/EP2104108A1/fr
Priority to EP09159276A priority patent/EP2104109A1/fr
Publication of EP2070088A2 publication Critical patent/EP2070088A2/fr
Publication of EP2070088A4 publication Critical patent/EP2070088A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/29—Diodes comprising organic-inorganic heterojunctions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0076—Write operation performed depending on read result
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
EP07840800A 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits à verrouillage et circuits de fonctionnement comprenant des commutateurs à nanotubes à deux bornes extensibles Withdrawn EP2070088A4 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09159271A EP2104108A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes
EP09159276A EP2104109A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US83643706P 2006-08-08 2006-08-08
US83634306P 2006-08-08 2006-08-08
US84058606P 2006-08-28 2006-08-28
US85510906P 2006-10-27 2006-10-27
US91838807P 2007-03-16 2007-03-16
PCT/US2007/075521 WO2008021912A2 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits à verrouillage et circuits de fonctionnement comprenant des commutateurs à nanotubes à deux bornes extensibles

Related Child Applications (4)

Application Number Title Priority Date Filing Date
EP09159276A Division EP2104109A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes
EP09159271A Division EP2104108A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes
EP09159271.7 Division-Into 2009-05-01
EP09159276.6 Division-Into 2009-05-01

Publications (2)

Publication Number Publication Date
EP2070088A2 EP2070088A2 (fr) 2009-06-17
EP2070088A4 true EP2070088A4 (fr) 2009-07-29

Family

ID=39082936

Family Applications (5)

Application Number Title Priority Date Filing Date
EP07840799A Withdrawn EP2057683A4 (fr) 2006-08-08 2007-08-08 Éléments de mémoire et commutateurs à point de croisement et réseaux constitués de ceux-ci faisant appel à des blocs de nanotubes non volatils
EP09159271A Withdrawn EP2104108A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes
EP07840800A Withdrawn EP2070088A4 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits à verrouillage et circuits de fonctionnement comprenant des commutateurs à nanotubes à deux bornes extensibles
EP07840788A Active EP2057633B1 (fr) 2006-08-08 2007-08-08 Diodes à nanotubes non volatiles, blocs à nanotubes non volatiles et systèmes les utilisant et procédés pour les fabriquer
EP09159276A Withdrawn EP2104109A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP07840799A Withdrawn EP2057683A4 (fr) 2006-08-08 2007-08-08 Éléments de mémoire et commutateurs à point de croisement et réseaux constitués de ceux-ci faisant appel à des blocs de nanotubes non volatils
EP09159271A Withdrawn EP2104108A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP07840788A Active EP2057633B1 (fr) 2006-08-08 2007-08-08 Diodes à nanotubes non volatiles, blocs à nanotubes non volatiles et systèmes les utilisant et procédés pour les fabriquer
EP09159276A Withdrawn EP2104109A1 (fr) 2006-08-08 2007-08-08 Mémoires résistives non volatiles, circuits de verrouillage et circuits de fonctionnement dotés de deux commutateurs terminaux à nanotubes

Country Status (6)

Country Link
EP (5) EP2057683A4 (fr)
JP (4) JP6114487B2 (fr)
KR (3) KR101169499B1 (fr)
HK (2) HK1137163A1 (fr)
TW (3) TWI463673B (fr)
WO (3) WO2008021900A2 (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8102018B2 (en) 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8008745B2 (en) 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US7667999B2 (en) 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
CN101681921B (zh) * 2007-03-27 2013-03-27 桑迪士克3D公司 包括碳纳米管织物元件和转向元件的存储器单元及其形成方法
US7982209B2 (en) 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
JP5274799B2 (ja) * 2007-08-22 2013-08-28 ルネサスエレクトロニクス株式会社 半導体記憶装置
US8878235B2 (en) * 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
KR101537518B1 (ko) * 2008-04-11 2015-07-17 쌘디스크 3디 엘엘씨 탄소 나노-튜브 가역 저항-스위칭 소자를 포함한 메모리 셀과 이를 형성하는 방법
US8304284B2 (en) 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
WO2009126846A1 (fr) 2008-04-11 2009-10-15 Sandisk 3D, Llc Procédés d’intégration de damascène pour des films graphitiques dans des mémoires tridimensionnelles et mémoires formées grâce auxdits procédés
US8110476B2 (en) * 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
EP2263252B1 (fr) * 2008-04-11 2013-10-09 SanDisk 3D LLC Procédés pour graver des films de nanotube de carbone destinés à être utilisés dans des mémoires non volatiles
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8309407B2 (en) * 2008-07-15 2012-11-13 Sandisk 3D Llc Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
US20100012914A1 (en) * 2008-07-18 2010-01-21 Sandisk 3D Llc Carbon-based resistivity-switching materials and methods of forming the same
US8557685B2 (en) 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
KR20100052597A (ko) * 2008-11-11 2010-05-20 삼성전자주식회사 수직형 반도체 장치
US8183121B2 (en) * 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
TWI478358B (zh) * 2011-08-04 2015-03-21 Univ Nat Central A method of integrated AC - type light - emitting diode module
US9129894B2 (en) * 2012-09-17 2015-09-08 Intermolecular, Inc. Embedded nonvolatile memory elements having resistive switching characteristics
US9111611B2 (en) 2013-09-05 2015-08-18 Kabushiki Kaisha Toshiba Memory system
US9875332B2 (en) * 2015-09-11 2018-01-23 Arm Limited Contact resistance mitigation
JP2018186260A (ja) * 2017-04-25 2018-11-22 国立大学法人横浜国立大学 熱電発電デバイスおよび熱輸送デバイス
CN112151098A (zh) * 2019-06-27 2020-12-29 台湾积体电路制造股份有限公司 多熔丝记忆体单元电路
US11594269B2 (en) * 2020-06-19 2023-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. One time programmable (OTP) magnetoresistive random-access memory (MRAM)
KR20220168884A (ko) * 2021-06-17 2022-12-26 삼성전자주식회사 반도체 메모리 소자
US11881274B2 (en) * 2021-11-15 2024-01-23 Ememory Technology Inc. Program control circuit for antifuse-type one time programming memory cell array
US12063039B2 (en) 2021-12-01 2024-08-13 Mediatek Inc. Register with data retention

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010010656A1 (en) * 1998-03-05 2001-08-02 Phillip E. Mattison Sequentially addressing a nonvolatile writeable memory device
US6493272B1 (en) * 1999-07-02 2002-12-10 Nec Corporation Data holding circuit having backup function
US20060250843A1 (en) * 2005-05-09 2006-11-09 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
WO2007001642A2 (fr) * 2005-05-09 2007-01-04 Nantero, Inc. Verrou fantome non volatil utilisant un commutateur a nanotubes

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256514A (en) 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
FR2478879A1 (fr) * 1980-03-24 1981-09-25 Commissariat Energie Atomique Procede de realisation de dispositifs a effet memoire a semi-conducteurs amorphes
JPS57113296A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
US4442507A (en) 1981-02-23 1984-04-10 Burroughs Corporation Electrically programmable read-only memory stacked above a semiconductor substrate
USRE34363E (en) 1984-03-12 1993-08-31 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4743569A (en) * 1987-04-20 1988-05-10 Texas Instruments Incorporated Two step rapid thermal anneal of implanted compound semiconductor
US4916087A (en) 1988-08-31 1990-04-10 Sharp Kabushiki Kaisha Method of manufacturing a semiconductor device by filling and planarizing narrow and wide trenches
US5005158A (en) * 1990-01-12 1991-04-02 Sgs-Thomson Microelectronics, Inc. Redundancy for serial memory
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
US5096849A (en) 1991-04-29 1992-03-17 International Business Machines Corporation Process for positioning a mask within a concave semiconductor structure
US5536968A (en) 1992-12-18 1996-07-16 At&T Global Information Solutions Company Polysilicon fuse array structure for integrated circuits
DE4305119C2 (de) * 1993-02-19 1995-04-06 Eurosil Electronic Gmbh MOS-Speichereinrichtung zur seriellen Informationsverarbeitung
US5345110A (en) 1993-04-13 1994-09-06 Micron Semiconductor, Inc. Low-power fuse detect and latch circuit
JPH0729373A (ja) * 1993-07-08 1995-01-31 Mitsubishi Electric Corp 半導体記憶装置
US5818749A (en) * 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
US5670803A (en) 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
US5546349A (en) 1995-03-13 1996-08-13 Kabushiki Kaisha Toshiba Exchangeable hierarchical data line structure
US5768196A (en) * 1996-03-01 1998-06-16 Cypress Semiconductor Corp. Shift-register based row select circuit with redundancy for a FIFO memory
US5831923A (en) 1996-08-01 1998-11-03 Micron Technology, Inc. Antifuse detect circuit
US5912937A (en) * 1997-03-14 1999-06-15 Xilinx, Inc. CMOS flip-flop having non-volatile storage
US6008523A (en) 1998-08-26 1999-12-28 Siemens Aktiengesellschaft Electrical fuses with tight pitches and method of fabrication in semiconductors
DE60028343T2 (de) * 1999-02-12 2007-05-24 Board Of Trustees Operating Michigan State University, East Lansing Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung
JP4558950B2 (ja) * 1999-03-25 2010-10-06 オヴォニクス インコーポレイテッド 改善された接合を有する電気的にプログラム可能なメモリ素子
JP2002157880A (ja) 2000-11-15 2002-05-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
US6750802B1 (en) 2001-02-09 2004-06-15 Richard Olen Remote controller with programmable favorite keys
US6570806B2 (en) 2001-06-25 2003-05-27 International Business Machines Corporation System and method for improving DRAM single cell fail fixability and flexibility repair at module level and universal laser fuse/anti-fuse latch therefor
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
EP1341184B1 (fr) * 2002-02-09 2005-09-14 Samsung Electronics Co., Ltd. Dispositif memoire utilisant des nanotubes de carbon et procédé pour son fabrication
KR100450825B1 (ko) * 2002-02-09 2004-10-01 삼성전자주식회사 탄소나노튜브를 이용하는 메모리 소자 및 그 제조방법
US6624499B2 (en) 2002-02-28 2003-09-23 Infineon Technologies Ag System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
US6889216B2 (en) * 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
AU2003201760A1 (en) * 2002-04-04 2003-10-20 Kabushiki Kaisha Toshiba Phase-change memory device
US6768665B2 (en) * 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
JP4141767B2 (ja) * 2002-08-27 2008-08-27 富士通株式会社 強誘電体キャパシタを使用した不揮発性データ記憶回路
JP4547852B2 (ja) * 2002-09-04 2010-09-22 富士ゼロックス株式会社 電気部品の製造方法
US6831856B2 (en) * 2002-09-23 2004-12-14 Ovonyx, Inc. Method of data storage using only amorphous phase of electrically programmable phase-change memory element
JP2004133969A (ja) * 2002-10-08 2004-04-30 Renesas Technology Corp 半導体装置
US7606059B2 (en) * 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
US6944054B2 (en) * 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US7335906B2 (en) * 2003-04-03 2008-02-26 Kabushiki Kaisha Toshiba Phase change memory device
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US6982903B2 (en) * 2003-06-09 2006-01-03 Nantero, Inc. Field effect devices having a source controlled via a nanotube switching element
EP1665278A4 (fr) * 2003-08-13 2007-11-07 Nantero Inc Elements de commutation a base de nanotubes comprenant des commandes multiples et circuits produits a partir de ces elements
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
JP3995167B2 (ja) * 2003-10-24 2007-10-24 有限会社金沢大学ティ・エル・オー 相変化型メモリ
KR100694426B1 (ko) * 2004-02-16 2007-03-12 주식회사 하이닉스반도체 나노 튜브 셀 및 이를 이용한 메모리 장치
EP1723676A4 (fr) * 2004-03-10 2009-04-15 Nanosys Inc Dispositifs memoire a nanocapacites et reseaux a charge anisotropique
US6969651B1 (en) * 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US6955937B1 (en) * 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US7224598B2 (en) * 2004-09-02 2007-05-29 Hewlett-Packard Development Company, L.P. Programming of programmable resistive memory devices
TW200620473A (en) * 2004-09-08 2006-06-16 Renesas Tech Corp Nonvolatile memory device
WO2006132658A2 (fr) * 2004-09-21 2006-12-14 Nantero, Inc. Elements resistifs utilisant des nanotubes de carbone
CA2586120A1 (fr) 2004-11-02 2006-12-28 Nantero, Inc. Dispositifs de protection contre des decharges electrostatiques de nanotubes et commutateurs non volatiles et volatiles de nanotubes correspondants
US7208372B2 (en) * 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
KR100682925B1 (ko) * 2005-01-26 2007-02-15 삼성전자주식회사 멀티비트 비휘발성 메모리 소자 및 그 동작 방법
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
JP4843760B2 (ja) * 2005-12-26 2011-12-21 株式会社発明屋 カーボンナノチューブを用いた記憶素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010010656A1 (en) * 1998-03-05 2001-08-02 Phillip E. Mattison Sequentially addressing a nonvolatile writeable memory device
US6493272B1 (en) * 1999-07-02 2002-12-10 Nec Corporation Data holding circuit having backup function
US20060250843A1 (en) * 2005-05-09 2006-11-09 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
WO2007001642A2 (fr) * 2005-05-09 2007-01-04 Nantero, Inc. Verrou fantome non volatil utilisant un commutateur a nanotubes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PRADHAN B ET AL: "Electrical bistability and memory phenomenon in carbon nanotube-conjugated polymer matrixes", JOURNAL OF PHYSICAL CHEMISTRY. B, MATERIALS, SURFACES, INTERFACES AND BIOPHYSICAL, WASHINGTON, DC, US, vol. 110, 27 April 2006 (2006-04-27), pages 8274 - 8277, XP007908929, ISSN: 1089-5647 *

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