EP1584907B1 - Load sensor and its manufacturing method - Google Patents

Load sensor and its manufacturing method Download PDF

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Publication number
EP1584907B1
EP1584907B1 EP04793090A EP04793090A EP1584907B1 EP 1584907 B1 EP1584907 B1 EP 1584907B1 EP 04793090 A EP04793090 A EP 04793090A EP 04793090 A EP04793090 A EP 04793090A EP 1584907 B1 EP1584907 B1 EP 1584907B1
Authority
EP
European Patent Office
Prior art keywords
glass
resistor element
load sensor
adjusting layer
smaller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP04793090A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1584907A1 (en
EP1584907A4 (en
Inventor
Keiichi Nakao
Yukio Mizukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
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Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of EP1584907A1 publication Critical patent/EP1584907A1/en
Publication of EP1584907A4 publication Critical patent/EP1584907A4/en
Application granted granted Critical
Publication of EP1584907B1 publication Critical patent/EP1584907B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges

Abstract

　荷重センサは、基板と、基板上に形成されたガラス層と、ガラス層上に形成された配線と、ガラス層上に形成された調整層と、調整層上に形成され、配線に接続された感歪抵抗体とを備える。ガラス層の熱膨張係数より調整層の熱膨張係数は感歪抵抗体の熱膨張係数に近い。この荷重センサでは、抵抗体の内部に残る応力が低減され、その抵抗値の経時変化が抑えられる。したがって、１種類の抵抗体で様々な熱膨張係数や形状、厚みの基板上に形成することができ、様々な仕様の荷重センサが得られる。
EP04793090A 2003-11-04 2004-10-28 Load sensor and its manufacturing method Expired - Fee Related EP1584907B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003374121A JP3948452B2 (ja) 2003-11-04 2003-11-04 荷重センサ及びその製造方法
JP2003374121 2003-11-04
PCT/JP2004/015980 WO2005043102A1 (ja) 2003-11-04 2004-10-28 荷重センサ及びその製造方法

Publications (3)

Publication Number Publication Date
EP1584907A1 EP1584907A1 (en) 2005-10-12
EP1584907A4 EP1584907A4 (en) 2007-09-26
EP1584907B1 true EP1584907B1 (en) 2012-01-11

Family

ID=34544183

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04793090A Expired - Fee Related EP1584907B1 (en) 2003-11-04 2004-10-28 Load sensor and its manufacturing method

Country Status (5)

Country Link
US (1) US7397340B2 (ja)
EP (1) EP1584907B1 (ja)
JP (1) JP3948452B2 (ja)
CN (1) CN100394155C (ja)
WO (1) WO2005043102A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4055775B2 (ja) * 2002-08-07 2008-03-05 松下電器産業株式会社 荷重センサ及びその製造方法
US20060030062A1 (en) * 2004-08-05 2006-02-09 Jun He Micromachined wafer strain gauge
US7882747B2 (en) 2004-12-20 2011-02-08 Panasonic Corporation Strain sensor and method for manufacture thereof
JP2007205908A (ja) * 2006-02-02 2007-08-16 Matsushita Electric Ind Co Ltd 重量センサ
FR2905208B1 (fr) * 2006-08-28 2008-12-19 St Microelectronics Sa Filtre a resonateurs a ondes de lamb couples.
EP1927834B1 (de) * 2006-12-02 2010-05-26 Texmag GmbH Vertriebsgesellschaft Walze mit einem Kraftsensor
JP2009020061A (ja) * 2007-07-13 2009-01-29 Denso Corp 力学量センサ素子
JP5693047B2 (ja) * 2009-06-01 2015-04-01 株式会社デンソー 力学量センサ素子、およびその製造方法
US8324041B2 (en) * 2011-02-09 2012-12-04 Globalfoundries Inc. Complementary stress liner to improve DGO/AVT devices and poly and diffusion resistors
DE102015111425B4 (de) * 2014-07-18 2016-06-30 Klaus Kürschner Verfahren und Einrichtung zur elektrischen Kraftmessung mittels Isolationsdünnschicht
LU92593B1 (en) * 2014-11-06 2016-05-09 Iee Sarl Impact sensor
EP3321653B1 (en) * 2015-07-07 2020-03-11 Hitachi Automotive Systems, Ltd. Semiconductor device, mechanical quantity measuring device and semiconductor device fabricating method
CN106403866A (zh) * 2015-07-31 2017-02-15 北京航天计量测试技术研究所 一种适用于无安装孔线位移传感器组件的安装夹具
JP6669029B2 (ja) * 2016-09-28 2020-03-18 豊田合成株式会社 半導体装置の製造方法
JP2019138843A (ja) * 2018-02-14 2019-08-22 リンテック株式会社 歪み検出デバイス

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839708A (en) * 1986-02-08 1989-06-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Electromechanical semiconductor transducer
US5297438A (en) * 1991-10-03 1994-03-29 Alfred University Piezoresistive sensor
JPH09273968A (ja) * 1996-04-08 1997-10-21 Matsushita Electric Ind Co Ltd 力学量センサおよびその製造法
EP0924501A2 (en) * 1997-12-19 1999-06-23 Delco Electronics Corporation Thick film piezoresistor sensing structure
US20020130756A1 (en) * 2001-03-17 2002-09-19 Waldemar Brinkis Electrical circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441304B2 (ja) * 1974-01-25 1979-12-07
JPS6051591B2 (ja) * 1977-09-05 1985-11-14 株式会社クラレ 高級感のある皮革様シ−トの製造法
JPS6167901A (ja) 1984-09-11 1986-04-08 昭栄化学工業株式会社 抵抗組成物及びそれよりなる厚膜抵抗体
JPS63298128A (ja) 1987-05-29 1988-12-05 Copal Electron Co Ltd 圧力センサ
JPH0310166A (ja) * 1989-06-08 1991-01-17 Nippon Telegr & Teleph Corp <Ntt> 荷電ビーム検出方法
JPH06294693A (ja) * 1993-04-07 1994-10-21 Matsushita Electric Ind Co Ltd 抵抗体およびこれを用いた圧力センサ
US5867886A (en) * 1997-10-20 1999-02-09 Delco Electronics Corp. Method of making a thick film pressure sensor
DE19813468C1 (de) * 1998-03-26 1999-07-22 Sensotherm Temperatursensorik Sensorbauelement
JP4055775B2 (ja) * 2002-08-07 2008-03-05 松下電器産業株式会社 荷重センサ及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839708A (en) * 1986-02-08 1989-06-13 Kabushiki Kaisha Toyota Chuo Kenkyusho Electromechanical semiconductor transducer
US5297438A (en) * 1991-10-03 1994-03-29 Alfred University Piezoresistive sensor
JPH09273968A (ja) * 1996-04-08 1997-10-21 Matsushita Electric Ind Co Ltd 力学量センサおよびその製造法
EP0924501A2 (en) * 1997-12-19 1999-06-23 Delco Electronics Corporation Thick film piezoresistor sensing structure
US20020130756A1 (en) * 2001-03-17 2002-09-19 Waldemar Brinkis Electrical circuit

Also Published As

Publication number Publication date
CN1701220A (zh) 2005-11-23
WO2005043102A1 (ja) 2005-05-12
EP1584907A1 (en) 2005-10-12
JP2005140515A (ja) 2005-06-02
CN100394155C (zh) 2008-06-11
US7397340B2 (en) 2008-07-08
EP1584907A4 (en) 2007-09-26
JP3948452B2 (ja) 2007-07-25
US20060001521A1 (en) 2006-01-05

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